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A hybrid pulsed laser deposition approach to grow thin films of chalcogenides
Authors:
Mythili Surendran,
Shantanu Singh,
Huandong Chen,
Claire Wu,
Amir Avishai,
Yu-Tsun Shao,
Jayakanth Ravichandran
Abstract:
Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the materia…
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Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, we report a novel approach to grow chalcogenides - hybrid pulsed laser deposition - wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. Our work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.
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Submitted 18 November, 2023;
originally announced November 2023.
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A Polymeric Planarization Strategy for Versatile Multi-terminal Electrical Transport Studies on Small, Bulk Quantum Materials
Authors:
Huandong Chen,
Amir Avishai,
Jayakanth Ravichandran
Abstract:
We report a device fabrication strategy of making multi-terminal electrical contacts on small (< 1 mm) bulk quantum materials using lithography-based techniques for electrical transport studies. The crystals are embedded in a polymeric medium to planarize the top surface, and then standard lithography and microfabrication techniques are directly applied to form electrodes with various geometries.…
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We report a device fabrication strategy of making multi-terminal electrical contacts on small (< 1 mm) bulk quantum materials using lithography-based techniques for electrical transport studies. The crystals are embedded in a polymeric medium to planarize the top surface, and then standard lithography and microfabrication techniques are directly applied to form electrodes with various geometries. This approach overcomes the limitations of crystal thickness and lateral dimensions on establishing electrical contacts. We use low stress polymers to minimize the extrinsic thermal strain effect at low temperatures, which allow reliable transport measurements on quantum materials that are sensitive to strain. The crystal surface planarization method has enabled electronic transport studies such as in-plane anisotropy, Hall measurements on small, bulk BaTiS3 (BTS) crystals, and provides unique opportunities for two-dimensional (2D) heterogeneous integration on three-dimensional (3D) / quasi-one-dimensional (quasi-1D) bulk materials. Our strategy is general for many small, non-exfoliable crystals of newly synthesized quantum materials and paves the way for performing versatile transport studies on those novel materials.
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Submitted 28 August, 2022;
originally announced August 2022.
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Quasi-epitaxial growth of BaTiS$_3$ films
Authors:
M. Surendran,
B. Zhao,
G. Ren,
S. Singh,
A. Avishai,
H. Chen,
J. Han,
M. Kawasaki,
R. Mishra,
J. Ravichandran
Abstract:
Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications based on these materials. We report growth of quasi-epitaxial thin films of quasi one-dimensional (quasi-1D) hexagonal chalcogenide BaTiS$_3$ by pulsed laser…
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Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications based on these materials. We report growth of quasi-epitaxial thin films of quasi one-dimensional (quasi-1D) hexagonal chalcogenide BaTiS$_3$ by pulsed laser deposition. We identified the optimal growth conditions by varying the growth parameters such as the substrate temperature and H2S partial pressure and examined their effects on the thin film structure. High resolution thin film X-Ray diffraction shows strong texture in the out-of-plane direction, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides.
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Submitted 18 August, 2022;
originally announced August 2022.
