Showing 1–50 of 56 results for author: Avila, J

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Authors: Hongyun Zhang, Qian Li, Youngju Park, Yu** Jia, Wanying Chen, Jiaheng Li, Qinxin Liu, Changhua Bao, Nicolas Leconte, Shaohua Zhou, Yuan Wang, Kenji Watanabe, Takashi Taniguchi, Jose Avila, Pavel Dudin, Pu Yu, Hongming Weng, Wenhui Duan, Quansheng Wu, Jeil Jung, Shuyun Zhou

Abstract: Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric… ▽ More Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Comments: 4 figures

Journal ref: Nat Commun 15, 3737 (2024)

Evolution of flat band and role of lattice relaxations in twisted bilayer graphene

Authors: Qian Li, Hongyun Zhang, Yijie Wang, Wanying Chen, Changhua Bao, Qinxin Liu, Tianyun Lin, Shuai Zhang, Haoxiong Zhang, Kenji Watanabe, Takashi Taniguchi, Jose Avila, Pavel Dudin, Qunyang Li, Pu Yu, Wenhui Duan, Zhida Song, Shuyun Zhou

Abstract: Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moiré period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physi… ▽ More Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moiré period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physics of MATBG. Here, we combine nanospot angle-resolved photoemission spectroscopy and atomic force microscopy to resolve the fine electronic structure of the flat band and remote bands, and their evolution with twist angles from 1.07$^\circ$ to 2.60$^\circ$. Near the magic angle, dispersion is characterized by a flat band near the Fermi energy with a strongly reduced bandwidth. Moreover, near 1.07$^\circ$, we observe a spectral weight transfer between remote bands at higher binding energy and extract the modulated interlayer spacing near the magic angle. Our work provides direct spectroscopic information on flat band physics and highlights the role of lattice relaxations. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Comments: 22 pages, 5 figures, Nature Materials, in press

Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

Authors: Arthur R. J. Barreto, Graziâni Candiotto, Harold J. C. Avila, Rafael S. Carvalho, Aline Magalhães dos Santos, Mario Prosa, Emilia Benvenuti, Salvatore Moschetto, Stefano Toffanin, Rodrigo B. Capaz, Michele Muccini, Marco Cremona

Abstract: Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyureth… ▽ More Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyurethane films as dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation. △ Less

Submitted 4 December, 2023; originally announced December 2023.

Comments: 25 pages, 5 figures, 1 table

Journal ref: ACS Appl. Mater. Interfaces 2023, 15, 28, 33809-33818

Frequency tunable, cavity-enhanced single erbium quantum emitter in the telecom band

Authors: Yong Yu, Dorian Oser, Gaia Da Prato, Emanuele Urbinati, Javier Carrasco Ávila, Yu Zhang, Patrick Remy, Sara Marzban, Simon Gröblacher, Wolfgang Tittel

Abstract: Single quantum emitters embedded in solid-state hosts are an ideal platform for realizing quantum information processors and quantum network nodes. Among the currently-investigated candidates, Er$^{3+}$ ions are particularly appealing due to their 1.5 $μ$m optical transition in the telecom band as well as their long spin coherence times. However, the long lifetimes of the excited state -- generall… ▽ More Single quantum emitters embedded in solid-state hosts are an ideal platform for realizing quantum information processors and quantum network nodes. Among the currently-investigated candidates, Er$^{3+}$ ions are particularly appealing due to their 1.5 $μ$m optical transition in the telecom band as well as their long spin coherence times. However, the long lifetimes of the excited state -- generally in excess of 1 ms -- along with the inhomogeneous broadening of the optical transition result in significant challenges. Photon emission rates are prohibitively small, and different emitters generally create photons with distinct spectra, thereby preventing multi-photon interference -- a requirement for building large-scale, multi-node quantum networks. Here we solve this challenge by demonstrating for the first time linear Stark tuning of the emission frequency of a single Er$^{3+}$ ion. Our ions are embedded in a lithium niobate crystal and couple evanescently to a silicon nano-photonic crystal cavity that provides an up to 143 increase of the measured decay rate. By applying an electric field along the crystal c-axis, we achieve a Stark tuning greater than the ion's linewidth without changing the single-photon emission statistics of the ion. These results are a key step towards rare earth ion-based quantum networks. △ Less

Submitted 28 April, 2023; originally announced April 2023.

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier do**

Authors: Ekaterina Khestanova, Tatyana Ivanova, Roland Gillen, Alessandro D Elia, Oliver Nicholas Gallego Lacey, Lena Wysocki, Alexander Gruneis, Vasily Kravtsov, Wlodek Strupinski, Janina Maultzsch, Viktor Kandyba, Mattia Cattelan, Alexei Barinov, Jose Avila, Pavel Dudin, Boris V. Senkovskiy

Abstract: Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the… ▽ More Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical do** by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron do** and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge do** opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers. △ Less

Submitted 5 April, 2023; originally announced April 2023.

Journal ref: ACS Photonics 2023

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

Authors: Davide Curcio, Charlotte E. Sanders, Alla Chikina, Henriette E. Lund, Marco Bianchi, Veronica Granata, Marco Cannavacciuolo, Giuseppe Cuono, Carmine Autieri, Filomena Forte, Alfonso Romano, Mario Cuoco, Pavel Dudin, Jose Avila, Craig Polley, Thiagarajan Balasubramanian, Rosalba Fittipaldi, Antonio Vecchione, Philip Hofmann

Abstract: The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potenti… ▽ More The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 12 pages, 14 figures

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Authors: Jihene Zribi, Debora Pierucci, Federico Bisti, Biyuan Zheng, Josse Avila, Lama Khalil, Cyrine Ernandes, Julien Chaste, Fabrice Oehler, Marco Pala, Thomas Maroutian, Ilka Hermes, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi

Abstract: Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS$_{1.4}$Se$_{0.6}$ alloys. The electronic structure of this alloy, explore… ▽ More Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS$_{1.4}$Se$_{0.6}$ alloys. The electronic structure of this alloy, explored using angle resolved photoemission spectroscopy, shows a clear valence band structure anisotropy characterized by two paraboloids shifted in one direction of the k-space by a constant in-plane vector. This band splitting is a signature of a unidirectional Rashba spin splitting with a related giant Rashba parameter of 2.8 0.7 eV . The combination of angle resolved photoemission spectroscopy with piezo force microscopy highlights the link between this giant unidirectional Rashba spin splitting and an in-plane polarization present in the alloy. These peculiar anisotropic properties of the WS$_{1.4}$Se$_{0.6}$ alloy can be related to local atomic orders induced during the growth process due the different size and electronegativity between S and Se atoms. This distorted crystal structure combined to the observed macroscopic tensile strain, as evidenced by photoluminescence, displays electric dipoles with a strong in-plane component, as shown by piezoelectric microscopy. The interplay between semiconducting properties, in-plane spontaneous polarization and giant out-of-plane Rashba spin-splitting in this two-dimensional material has potential for a wide range of applications in next-generation electronics, piezotronics and spintronics devices. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Comments: Nanotechnology (2022)

Electronic band structure changes across the antiferromagnetic phase transition of exfoliated MnPS$_3$ probed by $μ$-ARPES

Authors: Jeff Strasdas, Benjamin Pestka, Milosz Rybak, Adam K. Budniak, Niklas Leuth, Honey Boban, Vitaliy Feyer, Iulia Cojocariu, Daniel Baranowski, José Avila, Pavel Dudin, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Carmine Autieri, Yaron Amouyal, Lukasz Plucinski, Efrat Lifshitz, Magdalena Birowska, Markus Morgenstern

Abstract: Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS… ▽ More Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the Néel temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements. △ Less

Submitted 22 June, 2023; v1 submitted 10 November, 2022; originally announced November 2022.

Comments: 26 pages, 17 figures

ACM Class: J.2

Journal ref: Nano Lett. 2023, 23, 22, 10342-10349

Observation of flat $Γ$ moiré bands in twisted bilayer WSe$_2$

Authors: Gianmarco Gatti, Julia Issing, Louk Rademaker, Florian Margot, Tobias A. de Jong, Sense Jan van der Molen, Jérémie Teyssier, Timur K. Kim, Matthew D. Watson, Cephise Cacho, Pavel Dudin, José Avila, Kumara Cordero Edwards, Patrycja Paruch, Nicolas Ubrig, Ignacio Gutiérrez-Lezama, Alberto Morpurgo, Anna Tamai, Felix Baumberger

Abstract: The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space map** techniques to study moiré superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our… ▽ More The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space map** techniques to study moiré superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our data reveal a split-off flat band that derives from the monolayer $Γ$ states. Using advanced data analysis, we directly quantify the moiré potential from our data. We further demonstrate that the global valence band maximum in tWSe$_2$ is close in energy to this flat band but derives from the monolayer K-states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that $Γ$-valley flat bands might be involved in the correlated physics of twisted WSe$_2$. △ Less

Submitted 2 November, 2022; originally announced November 2022.

Programming moiré patterns in 2D materials by bending

Authors: Mäelle Kapfer, Bjarke S. Jessen, Megan E. Eisele, Matthew Fu, Dorte R. Danielsen, Thomas P. Darlington, Samuel L. Moore, Nathan R. Finney, Ariane Marchese, Valerie Hsieh, Paulina Majchrzak, Zhihao Jiang, Deepnarayan Biswas, Pavel Dudin, José Avila, Kenji Watanabe, Takashi Taniguchi, Søren Ulstrup, Peter Bøggild, P. J. Schuck, Dmitri N. Basov, James Hone, Cory R. Dean

Abstract: Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to rando… ▽ More Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Journal ref: Science, 381, 2023, pp 677-681

Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides

Authors: Ding Pei, Binbin Wang, Zishu Zhou, Zhihai He, Liheng An, Shanmei He, Cheng Chen, Yiwei Li, Liyang Wei, Aiji Liang, Jose Avila, Pavel Dudin, Viktor Kandyba, Alessio Giampietri, Mattia Cattelan, Alexei Barinov, Zhongkai Liu, Jianpeng Liu, Hongming Weng, Ning Wang, Jiamin Xue, Yulin Chen

Abstract: Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systemat… ▽ More Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moiré bands were observed only at Γ-valley but not K-valley in μ-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moiré length scale associated with the Γ-valley moiré bands. These results not only reveal the unsual valley dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the Γ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales. △ Less

Submitted 27 May, 2022; originally announced May 2022.

Comments: 29 pages, accepted by PRX

Singlet-doublet transitions of a quantum dot Josephson junction detected in a transmon circuit

Authors: Arno Bargerbos, Marta Pita-Vidal, Rok Žitko, Jesús Ávila, Lukas J. Splitthoff, Lukas Grünhaupt, Jaap J. Wesdorp, Christian K. Andersen, Yu Liu, Leo P. Kouwenhoven, Ramón Aguado, Angela Kou, Bernard van Heck

Abstract: We realize a hybrid superconductor-semiconductor transmon device in which the Josephson effect is controlled by a gate-defined quantum dot in an InAs/Al nanowire. Microwave spectroscopy of the transmon's transition spectrum allows us to probe the ground state parity of the quantum dot as a function of gate voltages, external magnetic flux, and magnetic field applied parallel to the nanowire. The m… ▽ More We realize a hybrid superconductor-semiconductor transmon device in which the Josephson effect is controlled by a gate-defined quantum dot in an InAs/Al nanowire. Microwave spectroscopy of the transmon's transition spectrum allows us to probe the ground state parity of the quantum dot as a function of gate voltages, external magnetic flux, and magnetic field applied parallel to the nanowire. The measured parity phase diagram is in agreement with that predicted by a single-impurity Anderson model with superconducting leads. Through continuous time monitoring of the circuit we furthermore resolve the quasiparticle dynamics of the quantum dot Josephson junction across the phase boundaries. Our results can facilitate the realization of semiconductor-based $0-π$ qubits and Andreev qubits. △ Less

Submitted 25 February, 2022; originally announced February 2022.

Comments: Main text has 14 pages, 7 figures. Supplement has 21 pages, 21 figures

Journal ref: PRX Quantum 3, 030311 (2022)

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Authors: Lama Khalil, Debora Pierucci, Emilio Velez, José Avila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi

Abstract: Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localize… ▽ More Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K. △ Less

Submitted 10 January, 2022; originally announced January 2022.

Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy

Authors: Changhua Bao, Hongyun Zhang, Qian Li, Shaohua Zhou, Haoxiong Zhang, Ke Deng, Kenan Zhang, Laipeng Luo, Wei Yao, Chaoyu Chen, José Avila, Maria C. Asensio, Yang Wu, Shuyun Zhou

Abstract: Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. He… ▽ More Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. Here by using nanometer- and micrometer-spot angle-resolved photoemission spectroscopies (NanoARPES and MicroARPES), we reveal the spatially-resolved electronic structure in the stripe phase of IrTe$_2$. Each separated domain shows two-fold symmetric electronic structure with the mirror axis aligned along 3 equivalent directions, and 6$\times$1 replicas are clearly identified. Moreover, such electronic structure inhomogeneity disappears across the stripe phase transition, suggesting that electronic phase with broken symmetry induced by the 6$\times$1 modulation is directly related to the stripe phase transition of IrTe$_2$. Our work demonstrates the capability of NanoARPES and MicroARPES in elucidating the fundamental physics of phase-separated materials. △ Less

Submitted 28 October, 2021; originally announced October 2021.

Journal ref: Commun. Phys. 4, 229 (2021)

Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one dimensional electronic character in ReSe$_{2}$

Authors: Lewis S. Hart, Surani M. Gunasekera, James L. Webb, Marcin Mucha-Kruczynski, José Avila, María C. Asensio, Daniel Wolverson

Abstract: We study the valence band structure of ReSe$_{2}$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increa… ▽ More We study the valence band structure of ReSe$_{2}$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increase of in-plane anisotropy induced by changes in the interlayer coupling and suggests progressively more one-dimensional character of electronic states in few-layer rhenium dichalcogenides. △ Less

Submitted 10 August, 2021; v1 submitted 23 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 104, 035421 (2021)

Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys

Authors: Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pave Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi

Abstract: In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the… ▽ More In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1-x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono- to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1-x)Se2x, we performed a nano-angle resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1-x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1-x)Se2x opens the way for spectrally tunable light-emitting devices. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Massive suppression of proximity pairing in topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on niobium

Authors: Joseph A. Hlevyack, Sahand Najafzadeh, Meng-Kai Lin, Takahiro Hashimoto, Tsubaki Nagashima, Akihiro Tsuzuki, Akiko Fukushima, Cédric Bareille, Yang Bai, Peng Chen, Ro-Ya Liu, Yao Li, David Flötotto, José Avila, James N. Eckstein, Shik Shin, Kozo Okazaki, T. -C. Chiang

Abstract: Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evid… ▽ More Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evidenced by ultrahigh-resolution band map**s and by contrasting quantified superconducting gaps with those of heavily n-doped topological Bi$_2$Se$_3$/Nb. The results underscore the limitations of using superconducting proximity effects to realize topological superconductivity in nearly intrinsic systems. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Comments: Accepted at Physical Review Letters: https://journals.aps.org/prl/accepted/b0073Y70Ddc12c71a13a3ac871102f6c7e1a1bd7b

Journal ref: Phys. Rev. Lett. 124, 236402 (2020)

Majorana oscillations and parity crossings in semiconductor-nanowire-based transmon qubits

Authors: J. Avila, E. Prada, P. San-Jose, R. Aguado

Abstract: We show that the microwave (MW) spectra in semiconductor-nanowire-based transmon qubits provide a strong signature of the presence of Majorana bound states in the junction. This occurs as an external magnetic field tunes the wire into the topological regime and the energy splitting of the emergent Majorana modes oscillates around zero energy owing to their wave function spatial overlap in finite-l… ▽ More We show that the microwave (MW) spectra in semiconductor-nanowire-based transmon qubits provide a strong signature of the presence of Majorana bound states in the junction. This occurs as an external magnetic field tunes the wire into the topological regime and the energy splitting of the emergent Majorana modes oscillates around zero energy owing to their wave function spatial overlap in finite-length wires. In particular, we discuss how these Majorana oscillations, and the concomitant fermion parity switches in the ground state of the junction, result in distinct spectroscopic features --in the form of an intermitent visibility of absorption lines-- that strongly deviate from standard transmon behavior. In contrast, non-oscillating zero modes, such as topologically trivial Andreev bound states resulting from sufficiently smooth potentials, exhibit an overall standard transmon response. These differences in the MW response could help determine whether the junction contains topological Majoranas or not. △ Less

Submitted 5 October, 2020; v1 submitted 5 March, 2020; originally announced March 2020.

Comments: 6 pages, 3 Figures. Includes a new discussion about quasiMajoranas in smooth junctions. Published version. See also accompanying paper arXiv:2003.02852

Journal ref: Phys. Rev. Research 2, 033493 (2020)

Superconducting islands with semiconductor-nanowire-based topological Josephson junctions

Authors: J. Avila, E. Prada, P. San-Jose, R. Aguado

Abstract: We theoretically study superconducting islands based on semiconductor-nanowire Josephson junctions and take into account the presence of subgap quasiparticle excitations in the spectrum of the junction. Our method extends the standard model Hamiltonian for a superconducting charge qubit and replaces the Josephson potential by the Bogoliubov--de Gennes Hamiltonian of the nanowire junction, projecte… ▽ More We theoretically study superconducting islands based on semiconductor-nanowire Josephson junctions and take into account the presence of subgap quasiparticle excitations in the spectrum of the junction. Our method extends the standard model Hamiltonian for a superconducting charge qubit and replaces the Josephson potential by the Bogoliubov--de Gennes Hamiltonian of the nanowire junction, projected onto the relevant low-energy subgap subspace. This allows to fully incorporate the coherent dynamics of subgap levels in the junction. The combined effect of spin-orbit coupling and Zeeman energy in the nanowires forming the junction triggers a topological transition, where the subgap levels evolve from finite-energy Andreev bound states into near-zero energy Majorana bound states. The interplay between the microscopic energy scales governing the nanowire junction (the Josephson energy, the Majorana coupling and the Majorana energy splitting), with the charging energy of the superconducting island, gives rise to a great variety of physical regimes. Based on this interplay of different energy scales, we fully characterize the microwave response of the junction, from the Cooper pair box to the transmon regimes, and show how the presence of Majoranas can be detected through distinct spectroscopic features. In split-junction geometries, the plasma mode couples to the phase-dispersing subgap levels resulting from Majorana hybridization via a Jaynes--Cummings-like interaction. As a consequence of this interaction, higher order plasma excitations in the junction inherit Majorana properties, including the $4π$ effect. △ Less

Submitted 5 October, 2020; v1 submitted 5 March, 2020; originally announced March 2020.

Comments: 18 pages, 19 figures. New section about split junctions. Final published version. See also accompanying paper arXiv:2003.02858

Journal ref: Phys. Rev. B 102, 094518 (2020)

Introducing strong correlation effects into graphene by gadolinium intercalation

Authors: S. Link, S. Forti, A. Stöhr, K. Küster, M. Rösner, D. Hirschmeier, C. Chen, J. Avila, M. C. Asensio, A. A. Zakharov, T. O. Wehling, A. I. Lichtenstein, M. I. Katsnelson, U. Starke

Abstract: Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such do** levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlation… ▽ More Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such do** levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlations according to our theoretical studies. Due to strong electron-phonon coupling in this regime, polaron replica bands develop. Thus, interesting ordered ground states should be made accessible. △ Less

Submitted 17 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 100, 121407(R), 2019

Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES

Authors: Kosuke Nakayama, Seigo Souma, Chi Xuan Trang, Daichi Takane, Chaoyu Chen, Jose Avila, Takashi Takahashi, Satoshi Sasaki, Kouji Segawa, Maria Carmen Asensio, Yoichi Ando, Takafumi Sato

Abstract: We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows u… ▽ More We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nano-islands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Comments: 6 pages, 3 figures

Journal ref: Nano Letters (2019)

Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment

Authors: Frédéric Joucken, Eberth A. Quezada-López, Jose Avila, Chaoyu Chen, John L. Davenport, Hechin Chen, Kenji Watanabe, Takashi Taniguchi, Maria Carmen Asensio, Jairo Velasco Jr

Abstract: Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure studies of 2D materials supported by hBN using angle-resolved photoemission spectroscopy (ARPES) are challenging. Here we investigate the electronic ban… ▽ More Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure studies of 2D materials supported by hBN using angle-resolved photoemission spectroscopy (ARPES) are challenging. Here we investigate the electronic band structure of a Bernal-stacked bilayer graphene sheet on a hexagonal boron nitride (BLG/hBN) flake using nanospot ARPES (nanoARPES). By fitting high-resolution energy vs. momentum electronic band spectra, we extract the tight-binding parameters for BLG on hBN. In addition, we reveal spatial variations of the alignment angle between BLG and hBN lattices via inhomogeneity of the electronic bands near the Fermi level. We confirmed these findings by scanning tunneling microscopy measurements obtained on the same device. Our results from spatially resolved nanoARPES measurements of BLG/hBN heterostructures are instrumental for understanding experiments that utilize spatially averaging techniques such as electronic transport and optical spectroscopy. △ Less

Submitted 24 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 161406(R), 2019

Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy

Authors: Frédéric Joucken, Jose Avila, Zhehao Ge, Eberth Quezada, Hemian Yi, Romaric Le Goff, Emmanuel Baudin, John L. Davenport, Kenji Watanabe, Takashi Taniguchi, Maria Carmen Asensio, Jairo Velasco Jr

Abstract: Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to non-invasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with sub-micron spatial resolution, we have investigated a… ▽ More Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to non-invasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with sub-micron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon 1s core level of BLG. The band gap opening of BLG submitted to a transverse electric field is discussed and the importance of intralayer screening is put forward. Our results pave the way for new studies that will use momentum-resolved electronic structure information to gain insight on the physics of materials submitted to the electric field effect. △ Less

Submitted 20 April, 2019; originally announced April 2019.

Journal ref: Nano Lett. 2019, 19, 4, 2682

Calculation of currents around a triangular indentation by the hodograph method

Authors: Jonathan I. Avila, Benoit Vanderheyden, Alejandro V. Silhanek, Sorin Melinte

Abstract: Border indentations in non-linear conductors, such as superconducting thin films in the creep regime, alter the distribution of currents and magnetic fields near and far from the indentation. One of such disturbances are the discontinuity lines, or \textit{d}-lines, a parabolic-like line originating from the indentation where the current density direction changes abruptly. Hodograph series results… ▽ More Border indentations in non-linear conductors, such as superconducting thin films in the creep regime, alter the distribution of currents and magnetic fields near and far from the indentation. One of such disturbances are the discontinuity lines, or \textit{d}-lines, a parabolic-like line originating from the indentation where the current density direction changes abruptly. Hodograph series results are obtained for the currents around a triangular indentation and its corresponding $d$-lines in a conducting stripe of finite width and in an infinite half plane, considering two cases: uniform creep exponent and mixed infinite and ohmic exponents. The mixed creep exponent case presents currents distributions resembling the purely ohmic case, with significant current disturbances only near the indentation. For uniform creep exponent, results similar to a planar indentation are obtained, with far ranged currents features and parabolic-like $d$-lines with shapes depending on the creep exponent. In particular, the same $d$-line asymptotic behaviour is obtained for the triangle indentation as that of the planar defect in the critical state, a result obtained here just on continuity considerations of the hodograph expansions. This equivalence is due to identical contributions to the Fourier series of the current stream-function in the hodograph space, obtained from an images method expansion. △ Less

Submitted 9 January, 2019; v1 submitted 27 December, 2018; originally announced December 2018.

Non-Hermitian topology: a unifying framework for the Andreev versus Majorana states controversy

Authors: J. Avila, F. Peñaranda, E. Prada, P. San-Jose, R. Aguado

Abstract: Andreev bound states (ABSs) in hybrid semiconductor-superconductor nanowires can have near-zero energy in parameter regions where band topology predicts trivial phases. This surprising fact has been used to challenge the interpretation of a number of transport experiments in terms of non-trivial topology with Majorana zero modes (MZMs). We show that this ongoing ABS versus MZM controversy is fully… ▽ More Andreev bound states (ABSs) in hybrid semiconductor-superconductor nanowires can have near-zero energy in parameter regions where band topology predicts trivial phases. This surprising fact has been used to challenge the interpretation of a number of transport experiments in terms of non-trivial topology with Majorana zero modes (MZMs). We show that this ongoing ABS versus MZM controversy is fully clarified when framed in the language of non-Hermitian topology, the natural description for open quantum systems. This change of paradigm allows us to understand topological transitions and the emergence of pairs of zero modes more broadly, in terms of exceptional point (EP) bifurcations of system eigenvalue pairs in the complex plane. Within this framework, we show that some zero energy ABSs are actually non-trivial, and share all the properties of conventional MZMs, such as the recently observed $2e^2/h$ conductance quantization. From this point of view, any distinction between such ABS zero modes and conventional MZMs becomes artificial. The key feature that underlies their common non-trivial properties is an asymmetric coupling of Majorana components to the reservoir, which triggers the EP bifurcation. △ Less

Submitted 12 July, 2018; originally announced July 2018.

Comments: 8 pages, 6 figures

Journal ref: Communications Physics 2, 133 (2019)

Black Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy

Authors: Yabin Chen, Chaoyu Chen, Robert Kealhofer, Huili Liu, Zhiquan Yuan, Lili Jiang, Joonki Suh, Joonsuk Park, Changhyun Ko, Hwan Sung Choe, José Avila, Mianzeng Zhong, Zhongming Wei, **gbo Li, Shushen Li, Hongjun Gao, Yunqi Liu, James Analytis, Qinglin Xia, Maria C. Asensio, Junqiao Wu

Abstract: Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between within the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less i… ▽ More Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between within the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Herein, we report a rare chemical form of arsenic, called black-arsenic (b-As), as an extremely anisotropic layered semiconductor. We have performed systematic characterization on the structural, electronic, thermal and electrical properties of b-As single crystals, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). Our analysis shows that b-As exhibits higher or comparable electronic, thermal and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies are able to potentially implement novel ideas for scientific research and device applications. △ Less

Submitted 1 May, 2018; originally announced May 2018.

Quasicrystalline 30° Twisted Bilayer Graphene as an Incommensurate Superlattice with Strong Interlayer Coupling

Authors: Wei Yao, Eryin Wang, Changhua Bao, Yiou Zhang, Kenan Zhang, Kejie Bao, Chun Kai Chan, Chaoyu Chen, Jose Avila, Maria C. Asensio, Junyi Zhu, Shuyun Zhou

Abstract: The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in anal… ▽ More The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in analogy to quasicrystals) are not only rare in nature, but also the interlayer interaction has often been assumed to be negligible due to the lack of phase coherence. Here we report the successful growth of quasicrystalline 30° twisted bilayer graphene (30°-tBLG) which is stabilized by the Pt(111) substrate, and reveal its electronic structure. The 30°-tBLG is confirmed by low energy electron diffraction and the intervalley double-resonance Raman mode at 1383 cm$^{-1}$. Moreover, the emergence of mirrored Dirac cones inside the Brillouin zone of each graphene layer and a gap opening at the zone boundary suggest that these two graphene layers are coupled via a generalized Umklapp scattering mechanism, i.e. scattering of Dirac cone in one graphene layer by the reciprocal lattice vector of the other graphene layer. Our work highlights the important role of interlayer coupling in incommensurate quasicrystalline superlattices, thereby extending band structure engineering to incommensurate superstructures. △ Less

Submitted 19 June, 2018; v1 submitted 15 April, 2018; originally announced April 2018.

Comments: Evidences of quasicrystalline 30°-tBLG from LEED, Raman and ARPES (combined with regular and nano-size beam spot), submitted on December 1, 2017, has been accepted by PNAS

Quasi-two-dimensional thermoelectricity in SnSe

Authors: V. Tayari, B. V. Senkovskiy, D. Rybkovskiy, N. Ehlen, A. Fedorov, C. -Y. Chen, J. Avila, M. Asensio, A. Perucchi, P. di Pietro, L. Yashina, I. Fakih, N. Hemsworth, M. Petrescu, G. Gervais, A. Grüneis, T. Szkopek

Abstract: Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valle… ▽ More Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Comments: 10 pages, 5 figures, plus supporting information

Journal ref: Phys. Rev. B 97, 045424 (2018)

Temperature-Driven Topological Transition in 1T'-MoTe2

Authors: Ayelet Notis Berger, Erick Andrade, Alex Kerelsky, Drew Edelberg, Jian Li, Zhijun Wang, Lunyong Zhang, Jaewook Kim, Nader Zaki, Jose Avila, Chaoyu Chen, Maria C Asensio, Sang-Wook Cheong, Bogdan A. Bernevig, Abhay N. Pasupathy

Abstract: The topology of Weyl semimetals requires the existence of unique surface states. Surface states have been visualized in spectroscopy measurements, but their connection to the topological character of the material remains largely unexplored. 1T'-MoTe2, presents a unique opportunity to study this connection. This material undergoes a phase transition at 240K that changes the structure from orthorhom… ▽ More The topology of Weyl semimetals requires the existence of unique surface states. Surface states have been visualized in spectroscopy measurements, but their connection to the topological character of the material remains largely unexplored. 1T'-MoTe2, presents a unique opportunity to study this connection. This material undergoes a phase transition at 240K that changes the structure from orthorhombic (putative Weyl semimetal) to monoclinic (trivial metal), while largely maintaining its bulk electronic structure. Here we show from temperature-dependent quasiparticle interference measurements that this structural transition also acts as a topological switch for surface states in 1T'-MoTe2. At low temperature, we observe strong quasiparticle scattering, consistent with theoretical predictions and photoemission measurements for the surface states in this material. In contrast, measurements performed at room temperature show the complete absence of the scattering wavevectors associated with the trivial surface states. These distinct quasiparticle scattering behaviors show that 1T'-MoTe2 is ideal for separating topological and trivial electronic phenomena via temperature dependent measurements. △ Less

Submitted 18 December, 2017; originally announced December 2017.

Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene

Authors: Hugo Henck, Jose Avila, Zeineb Ben Aziza, Debora Pierucci, Jacopo Baima, Betül Pamuk, Julien Chaste, Daniel Utt, Miroslav Bartos, Karol Nogajewski, Benjamin A. Piot, Milan Orlita, Marek Potemski, Matteo Calandra, Maria C. Asensio, Francesco Mauri, Clément Faugeras, Abdelkarim Ouerghi

Abstract: The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or ma… ▽ More The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or magnetic orders. Clean experimental band structure measurements of ABC stacked specimens are missing because the samples are usually too small in size. Here, we directly image the band structure of large multilayer graphene flake containing approximately 14 consecutive ABC layers. Angle-resolved photoemission spectroscopy experiments reveal the flat electronic bands near the K point extends by 0.13 Å-1 at the Fermi level at liquid nitrogen temperature. First-principle calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV. △ Less

Submitted 25 June, 2018; v1 submitted 10 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 245421 (2018)

Emergence of Frohlich polaron from interlayer electron-phonon coupling in van der Waals heterostructure

Authors: Chaoyu Chen, Jose Avila, Shuopei Wang, Yao Wang, Marcin Mucha-Kruczyński, Cheng Shen, Rong Yang, Benjamin Nosarzewski, Thomas P. Devereaux, Guangyu Zhang, Maria C. Asensio

Abstract: Van der Waals heterostructures, vertical stacks of layered materials, offer newopportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-B… ▽ More Van der Waals heterostructures, vertical stacks of layered materials, offer newopportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-BN valence band maxima, with energy spacing coincident with the highest phonon energy of the heterostructure|an indication of Frohlich polaron formation due to forward scattering electron-phonon coupling. Parabolic fitting of the h-BN bands yields an effective mass enhancement of ~ 2.3, suggesting an intermediate coupling strength. Our theoretical simulations based on Migdal-Eliashberg theory corroborate the experimental results, allowing the extraction of microscopic physical parameters. Moreover,renormalisation of graphene $π$ band is observed due to the hybridisation with the h-BN band. Our work generalises the polaron study from transition metal oxides to Van derWaals heterostructures with higher material exibility, highlighting interlayer coupling as an extra degree of freedom to explore emergent phenomena. △ Less

Submitted 23 November, 2017; v1 submitted 1 July, 2017; originally announced July 2017.

Journal ref: Nano Letters 2018 18 (2), 1082-1087

Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy

Authors: James L. Webb, Lewis S. Hart, Daniel Wolverson, Chaoyu Chen, Jose Avila, Maria C. Asensio

Abstract: The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar inte… ▽ More The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar interaction. However, the degree of inter-layer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. We present a direct determination of the valence band structure of bulk ReS$_2$ using high resolution angle resolved photoemission spectroscopy (ARPES). We find a clear in-plane anisotropy due to the presence of chains of Re atoms, with a strongly directional effective mass which is larger in the direction orthogonal to the Re chains (2.2 $m_e$) than along them (1.6 $m_e$), in good agreement with density functional theory calculations. An appreciable inter-plane interaction results in an experimentally-measured difference of ~100-200 meV between the valence band maxima at the Z point (0,0,1/2) and the $Γ$ point (0,0,0) of the three-dimensional Brillouin zone. This leads to a direct gap at Z and a close-lying but larger gap at $Γ$, implying that bulk ReS2 is marginally indirect. This may account for recent conflicting transport and photoluminescence measurements and the resulting uncertainty about the direct or indirect gap nature of this material. △ Less

Submitted 7 September, 2017; v1 submitted 20 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 115205 (2017)

Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy

Authors: Lewis S Hart, James L Webb, Sara Dale, Simon J. Bending, Marcin Mucha-Kruczynski, Daniel Wolverson, Chaoyu Chen, José Avila, Maria C. Asensio

Abstract: ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to… ▽ More ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. We find a highly anisotropic in- and out-of-plane electronic structure, with the valence band maxima located away from any particular high-symmetry direction. The effective mass doubles its value perpendicular to the Re chains and the interlayer van der Waals coupling generates significant electronic dispersion normal to the layers. Our density functional theory calculations, including spin-orbit effects, are in excellent agreement with these experimental findings. △ Less

Submitted 1 April, 2017; originally announced April 2017.

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

Authors: Changhua Bao, Wei Yao, Eryin Wang, Chaoyu Chen, José Avila, Maria C. Asensio, Shuyun Zhou

Abstract: The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nano… ▽ More The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (um or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here by using ARPES with nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings. △ Less

Submitted 27 February, 2017; originally announced February 2017.

Journal ref: Nano letters, 17(3): 1564-1568 (2017)

Angle resolved photoemission spectroscopy reveals spin charge separation in metallic MoSe2 grain boundary

Authors: Yu**g Ma, Horacio Coy Diaz, Jose Avila, Chaoyu Chen, Vijaysankar Kalappattil, Raja Das, Manh-Huong Phan, Tilen Cadez, Jose M. P. Carmelo, Maria C. Asensio, Matthias Batzill

Abstract: Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density… ▽ More Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density wave transition, whose periodicity is given by kF/π, consistent with scanning tunneling microscopy and angle resolved photoemission measurements. Most importantly, we provide evidence for spin- and charge-separation, the hallmark of one-dimensional quantum liquids. Our studies show that the spectral line splits into distinctive spinon and holon excitations whose dispersions exactly follow the energy-momentum dependence calculated by a Hubbard model with suitable finite-range interactions. Our results also imply that quantum wires and junctions can be isolated in line defects of other transition metal dichalcogenides, which may enable quantum transport measurements and devices. △ Less

Submitted 8 February, 2017; originally announced February 2017.

Comments: ARTICLE

Journal ref: Nat. Commun. 8, 14231 doi: 10.1038/ncomms14231 (2017)

Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

Authors: Eryin Wang, Guorui Chen, Guoliang Wan, Xiaobo Lu, Chaoyu Chen, Jose Avila, Alexei V Fedorov, Guangyu Zhang, Maria C Asensio, Yuanbo Zhang, Shuyun Zhou

Abstract: In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements… ▽ More In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle. △ Less

Submitted 31 January, 2017; originally announced January 2017.

Journal ref: J. Phys.: Condens. Matter 28 (2016) 444002

Emerging one-dimensionality from self-organization of electrons in NbSe$_3$

Authors: M. A. Valbuena, P. Chudzinski, S. Pons, S. Conejeros, P. Alemany, E. Canadell, H. Berger, E. Frantzeskakis, J. Avila, M. C. Asensio, T. Giamarchi, M. Grioni

Abstract: Materials where the electron filling is close to commensurate filling provide one of the great challenges in materials science. Several proposals of unconventional orderings, where the electronic liquid self-organizes into components with distinct properties, were recently put forward, in particular in cuprates and pnictides where electronic nematic orders have been observed. The electrons self-or… ▽ More Materials where the electron filling is close to commensurate filling provide one of the great challenges in materials science. Several proposals of unconventional orderings, where the electronic liquid self-organizes into components with distinct properties, were recently put forward, in particular in cuprates and pnictides where electronic nematic orders have been observed. The electrons self-organization is expected to yield complex intra and inter unit cell patterns, and a reduction of dimensionality. Nevertheless, an unambiguous experimental proof of such complex orders, namely the direct observation of distinct dispersions, is still missing. Here we report a Nano Angle Resolved Photo-emission Spectroscopy (Nano-ARPES) study of NbSe$_3$, a material that has been considered a paradigm of charge order. The new data (Fig.1) invalidate the canonical picture of imperfect nesting and reveals the emergence of a novel order. The electrons self-organization uncovers the one-dimensional (1D) physics hidden in a material which naively should be the most 3D of all columnar chalcogenides. △ Less

Submitted 14 December, 2016; originally announced December 2016.

Comments: 15 pages, 4 figures; Supplementary Material (14 pages) available upon request

Direct growth of low-doped graphene on Ge/Si(001) surfaces

Authors: J. Dabrowski, G. Lippert, J. Avila, J. Baringhaus, I. Colambo, Yu. S. Dedkov, F. Herziger, G. Lupina, J. Maultzsch, T. Schaffus, T. Schroeder, M. Sowinska, C. Tegenkamp, D. Vignaud, M. -C. Asensio

Abstract: The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD an… ▽ More The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive map** of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by $30^\circ$ with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process. △ Less

Submitted 8 April, 2016; originally announced April 2016.

Comments: text and 8 figures

Journal ref: Sci. Rep. 6, 31639 (2016)

Experimental Observation of Two Massless Dirac-Fermion Gases in Graphene-Topological Insulator Heterostructure

Authors: Guang Bian, Ting-Fung Chung, Chang Liu, Chaoyu Chen, Tay-Rong Chang, Tailung Wu, Ilya Belopolski, Hao Zheng, Su-Yang Xu, Daniel S. Sanchez, Nasser Alidoust, Jonathan Pierce, Bryson Quilliams, Philip P. Barletta, Stephane Lorcy, Jose Avila, Guoqing Chang, Hsin Lin, Horng-Tay Jeng, Maria-Carmen Asensio, Yong P. Chen, M. Zahid Hasan

Abstract: Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. The graphene-TI heterostruct… ▽ More Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. The graphene-TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3 and Dirac π bands of graphene, and identify the twist angle in the graphene-TI heterostructure. The results suggest a potential tunable electronic platform in which two different Dirac low-energy states dominate the transport behavior. △ Less

Submitted 7 November, 2015; originally announced November 2015.

Journal ref: 2D Materials 3, 021009 (2016)

Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$

Authors: S. Nemšák, G. Conti, G. K. Pálsson, C. Conlon, S. Cho, J. Rault, J. Avila, M. -C. Asensio, C. Jackson, P. Moetakef, A. Janotti, L. Bjaalie, B. Himmetoglu, C. G. Van de Walle, L. Balents, C. M. Schneider, S. Stemmer, C. S. Fadley`

Abstract: For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)… ▽ More For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening. △ Less

Submitted 20 November, 2015; v1 submitted 13 August, 2015; originally announced August 2015.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 231602 (2015)

Four-boson bound states from a functional renormalisation group

Authors: Benjamin Jaramillo Avila, Michael C. Birse

Abstract: We use the functional renormalisation group to study the spectrum of three- and four-body states in bosonic systems around the unitary limit. Our effective action includes all energy-independent contact interactions in the four-atom sector and we introduce a running trimer field to eliminate couplings that involve the atom-atom-dimer channel. The results show qualitatively similar behaviour to tho… ▽ More We use the functional renormalisation group to study the spectrum of three- and four-body states in bosonic systems around the unitary limit. Our effective action includes all energy-independent contact interactions in the four-atom sector and we introduce a running trimer field to eliminate couplings that involve the atom-atom-dimer channel. The results show qualitatively similar behaviour to those from exact approaches. The truncated action we use leads to overbinding of the two four-body states seen in those treatments. It also generates a third state, although only for a very narrow range of two-body scattering lengths. △ Less

Submitted 16 June, 2015; originally announced June 2015.

Comments: 4 pages, 2 figures

Report number: INT-PUB-15-028

Journal ref: Phys. Rev. A 92, 023601 (2015)

Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling

Authors: Johannes Lischner, G. K. Palsson, Derek Vigil-Fowler, S. Nemsak, J. Avila, M. C. Asensio, C. S. Fadley, S. G. Louie

Abstract: We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes… ▽ More We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Green's function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations. △ Less

Submitted 29 April, 2015; originally announced April 2015.

Comments: 7 pages, 5 figures, accepted for publication in PRB

The atomic structure of the $\sqrt{3} \times \sqrt{3}$ phase of silicene on Ag(111)

Authors: Seymur Cahangirov, Veli Ongun Özçelik, Lede Xian, Jose Avila, Suyeon Cho, María C. Asensio, Salim Ciraci, Angel Rubio

Abstract: The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows exce… ▽ More The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. We propose a new mechanism for explaining the spontaneous and consequential formation of $\sqrt{3} \times \sqrt{3}$ structures from $3 \times 3$ structures on Ag substrate. We show that the $\sqrt{3} \times \sqrt{3}$ reconstruction is mainly determined by the interaction between Si atoms and have weak influence from Ag substrate. The proposed mechanism opens the path to understanding of multilayer silicon. △ Less

Submitted 11 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90, 035448 (2014)

Graphene Grown on Ge(001) from Atomic Source

Authors: Gunther Lippert, Jarek Dabrowski, Thomas Schroeder, Yuji Yamamoto, Felix Herziger, Janina Maultzsch, Jens Baringhaus, Christoph Tegenkamp, Maria Carmen Asensio, Jose Avila, Grzegorz Lupina

Abstract: Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with s… ▽ More Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Journal ref: Carbon 75 (2014) 104-112

Universal behaviour of four-boson systems from a functional renormalisation group

Authors: Benjamin Jaramillo Avila, Michael C. Birse

Abstract: We apply a functional renormalisation group to systems of four bosonic atoms close to the unitary limit. We work with a local effective action that includes a dynamical trimer field and we use this field to eliminate structures that do not correspond to the Faddeev-Yakubovsky equations. In the physical limit, we find three four-body bound states below the shallowest three-body state. The values of… ▽ More We apply a functional renormalisation group to systems of four bosonic atoms close to the unitary limit. We work with a local effective action that includes a dynamical trimer field and we use this field to eliminate structures that do not correspond to the Faddeev-Yakubovsky equations. In the physical limit, we find three four-body bound states below the shallowest three-body state. The values of the scattering lengths at which two of these states become bound are in good agreement with exact solutions of the four-body equations and experimental observations. The third state is extremely shallow. During the evolution we find an infinite number of four-body states based on each three-body state which follow a double-exponential pattern in the running scale. None of the four-body states shows any evidence of dependence on a four-body parameter. △ Less

Submitted 12 September, 2013; v1 submitted 19 April, 2013; originally announced April 2013.

Comments: 9 pages, 3 figures, details of flow equations and more explanation added

Journal ref: Phys. Rev. A 88, 043613 (2013)

Interferometer-controlled soft X-ray scanning photoemission microscope at SOLEIL

Authors: José Avila, Ivy Razado-Colambo, Stephane Lorcy, Jean-Luc Giorgetta, François Polack, María C. Asensio

Abstract: ANTARES beamline (BL), a new soft X-ray scanning photoemission microscope located at the SOLEIL synchrotron storage ring has been recently designed, built and commissioned. The implemented interferometer control allows the accurate measurement of the transverse position of the Fresnel zone plate (FZP) relative to the sample. An effective sample position feedback has been achieved during experiment… ▽ More ANTARES beamline (BL), a new soft X-ray scanning photoemission microscope located at the SOLEIL synchrotron storage ring has been recently designed, built and commissioned. The implemented interferometer control allows the accurate measurement of the transverse position of the Fresnel zone plate (FZP) relative to the sample. An effective sample position feedback has been achieved during experiments in static mode, with a fixed FZP position required to perform nano Angle-Resolved Photoelectron Spectroscopy (Nano-ARPES) measurements. Likewise, long-term stability has been attained for the FZP position relative to the sample during the translation of the FZP when performing typical X-ray absorption experiments around the absorption edges of light elements. Moreover, a fully automatic feedback digital control of the interferometric system provides extremely low orthogonal distortion of the recorded two-dimensional images. The microscope is diffraction limited with the resolution set to several tens of nanometers by the quality of the zone plates. Details on the design of the interferometric system and a brief description of the first commissioning results are presented here. △ Less

Submitted 27 December, 2012; originally announced December 2012.

ANTARES, a scanning photoemission microscopy beamline at SOLEIL

Authors: Jose Avila, Ivy Razado, Stehane Lorcy, Bruno Lagarde, Jean-Luc Giorgetta, François Polack, Maria C. Asensio

Abstract: As one of the latest beamline built at the SOLEIL synchrotron source, ANTARES beamline offers a spectroscopic non-destructive nano-probe to study advanced materials. This innovative scanning photoemission microscopy combines linear and angle sweeps to perform precise electronic band structure determination by Nano Angle Resolved Photoelectron Spectroscopy (nanoARPES) and chemical imaging by core l… ▽ More As one of the latest beamline built at the SOLEIL synchrotron source, ANTARES beamline offers a spectroscopic non-destructive nano-probe to study advanced materials. This innovative scanning photoemission microscopy combines linear and angle sweeps to perform precise electronic band structure determination by Nano Angle Resolved Photoelectron Spectroscopy (nanoARPES) and chemical imaging by core level detection. The beamline integrates effectively insertion devices and a high transmission beamline optics. This photon source has been combined with an advanced microscope, which has precise sample handling abilities. Moreover, it is fully compatible with a high resolution R4000 Scienta hemispherical analyzer and a set of Fresnel Zone Plates (FZP) able to focalize the beam spot up to a few tenths of nanometers, depending on the spatial resolution of the selected FZP. We present here the main conceptual design of the beamline and endstation, together with some of the firsts commissioning results. △ Less

Submitted 27 December, 2012; originally announced December 2012.

Topological invariants of edge states for periodic two-dimensional models

Authors: Julio Cesar Avila, Hermann Schulz-Baldes, Carlos Villegas-Blas

Abstract: Transfer matrix methods and intersection theory are used to calculate the bands of edge states for a wide class of periodic two-dimensional tight-binding models including a sublattice and spin degree of freedom. This allows to define topological invariants by considering the associated Bott-Maslov indices which can be easily calculated numerically. For time-reversal symmetric systems in the symple… ▽ More Transfer matrix methods and intersection theory are used to calculate the bands of edge states for a wide class of periodic two-dimensional tight-binding models including a sublattice and spin degree of freedom. This allows to define topological invariants by considering the associated Bott-Maslov indices which can be easily calculated numerically. For time-reversal symmetric systems in the symplectic universality class this leads to a Z_2-invariant for the edge states. It is shown that the edge state invariants are related to Chern numbers of the bulk systems and also to (spin) edge currents, in the spirit of the theory of topological insulators. △ Less

Submitted 9 May, 2013; v1 submitted 2 February, 2012; originally announced February 2012.

Comments: typos corrected, to appear in Math. Phys., Anal. Geom

Journal ref: Mathematical Physics, Analysis and Geometry 16, 136-170 (2013)

A chemical imaging and Nano-ARPES study of well-ordered thermally reduced SrTiO3(100)

Authors: Emmanouil Frantzeskakis, Jose Avila, Maria C. Asensio

Abstract: The structural and electronic properties of thermally reduced SrTiO3(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of Scanning Photoemission Microscopy and Angle Resolved Photoelectron Spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the… ▽ More The structural and electronic properties of thermally reduced SrTiO3(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of Scanning Photoemission Microscopy and Angle Resolved Photoelectron Spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the chemical composition of samples which present reproducible and suitable low-energy electron diffraction patterns after following well-established thermal reduction protocols. At the micrometric scale, Ca-rich areas have been directly imaged using high-energy resolution core level photoemission. Moreover, we have monitored the effect of Ca segregation on different features of the SrTiO3(100) electronic band structure, measuring ARPES inside, outside and at the interface of surface inhomogeneities with the identified Ca-rich areas. In particular, the interaction of Ca with the well-known intragap localized state, previously attributed to oxygen vacancies, has been investigated. Moreover, the combination of direct imaging and spectroscopic techniques with high spatial resolution has clarified the long-standing dilemma related to the bulk or surface character of Ca segregation in SrTiO3. Our results present solid evidence that the penetration depth of Ca segregation is very small. In contrast to what has been previously proposed, the origin of long-range surface reconstructions can unlikely be associated to Ca due to strong local variations of its surface concentration. △ Less

Submitted 16 March, 2012; v1 submitted 21 December, 2011; originally announced December 2011.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 85, 125115 (2012)

Curie temperature enhancement of electron doped Sr$_2$FeMoO$_6$ perovskites studied by photoemission spectroscopy

Authors: J. Navarro, J. Fontcuberta, M. Izquierdo, J. Avila, M. C. Asensio

Abstract: We report here on the electronic structure of electron-doped half-metallic ferromagnetic perovskites such Sr$_{2-x}$La$_x$FeMoO$_6$ ($x$=0-0.6) as obtained from high-resolved valence-band photoemission spectroscopy (PES). By comparing the PES spectra with band structure calculations, a distinctive peak at the Fermi level (E$_F$) with predominantly (Fe+Mo) t$_{2g}^\downarrow$ character has been e… ▽ More We report here on the electronic structure of electron-doped half-metallic ferromagnetic perovskites such Sr$_{2-x}$La$_x$FeMoO$_6$ ($x$=0-0.6) as obtained from high-resolved valence-band photoemission spectroscopy (PES). By comparing the PES spectra with band structure calculations, a distinctive peak at the Fermi level (E$_F$) with predominantly (Fe+Mo) t$_{2g}^\downarrow$ character has been evidenced for all samples, irrespectively of the $x$ values investigated. Moreover, we show that the electron do** due to the La substitution provides selectively delocalized carriers to the t$_{2g}^\downarrow$ metallic spin channel. Consequently, a gradual rising of the density of states at the E$_F$ has been observed as a function of the La do**. By changing the incoming photon energy we have shown that electron do** mainly rises the density of states of Mo parentage. These findings provide fundamental clues for understanding the origin of ferromagnetism in these oxides and shall be of relevance for tailoring oxides having still higher T$_C$. △ Less

Submitted 21 March, 2003; originally announced March 2003.