Showing 1–50 of 80 results for author: Autieri, C

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

Authors: Ghulam Hussain, Giuseppe Cuono, Piotr Dziawa, Dorota Janaszko, Janusz Sadowski, Slawomir Kret, Boguslawa Kurowska, Jakub Polaczynski, Kinga Warda, Shahid Sattar, Carlo M. Canali, Alexander Lau, Wojciech Brzezicki, Tomasz Story, Carmine Autieri

Abstract: We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w… ▽ More We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region. △ Less

Submitted 17 May, 2024; v1 submitted 7 January, 2024; originally announced January 2024.

Comments: 13 pages, 10 figures

Journal ref: Nanoscale Horizons (2024)

CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect

Authors: Giuseppe Cuono, Carmine Autieri, Tomasz Dietl

Abstract: Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te… ▽ More Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te and (Hg,Mn)Te, and examine their suitability for the fabrication of ferromagnetic barriers or ferromagnetic topological quantum wells, respectively. To account for the strong correlation of transition metal d electrons we employ hybrid functionals with different mixing parameters aHSE focusing on aHSE = 0.32, which better reproduces the experimental band gaps in HgTe, CdTe, Hg0.875Mn0.125Te, and Cd0.875Mn0.125Te. We find that Cr, like Mn, acts as an isoelectronic dopant but V can be an in-gap donor in CdTe and a resonant donor in HgTe, similar to the case of Fe in HgSe. From the magnetic point of view, Cr-do** results in a ferromagnetic phase within the general gradient approximation (GGA) but interactions become antiferromagnetic within hybrid functionals. However, (Hg,V)Te is a ferromagnet within both exchange-correlation functionals in a stark contrast to (Hg,Mn)Te for which robust antiferromagnetic coupling is found theoretically and experimentally. Furthermore, we establish that the Jahn-Teller effect is relevant only in the case of Cr-do**. Considering lower defect concentrations in HgTe-based quantum wells compared to (Bi,Sb)3Te2 layers, our results imply that HgTe quantum wells or (Cd,Hg)Te barriers containing either V or Cr show advantages over (Bi,Sb,Cr,V)3Te2-based QAHE systems but whether (i) ferromagnetic coupling will dominate in the Cr case and (ii) V will not introduce too many electrons to the quantum well is to be checked experimentally △ Less

Submitted 27 December, 2023; originally announced December 2023.

Comments: 9 pages, 7 figures

Dzyaloshinskii-Moriya interaction inducing weak ferromagnetism in centrosymmetric altermagnets and weak ferrimagnetism in noncentrosymmetric altermagnets

Authors: Carmine Autieri, Raghottam M Sattigeri, Giuseppe Cuono, Amar Fakhredine

Abstract: The Dzyaloshinskii-Moriya interaction (DMI) has explained successfully the weak ferromagnetism in some centrosymmetric antiferromagnets. However, in the last years, it was generally claimed that the DMI is not effective in centrosymmetric systems. We reconciled these views by separating the conventional antiferromagnets and altermagnets. Altermagnets represent collinear antiferromagnetic compounds… ▽ More The Dzyaloshinskii-Moriya interaction (DMI) has explained successfully the weak ferromagnetism in some centrosymmetric antiferromagnets. However, in the last years, it was generally claimed that the DMI is not effective in centrosymmetric systems. We reconciled these views by separating the conventional antiferromagnets and altermagnets. Altermagnets represent collinear antiferromagnetic compounds with spin-up and spin-down sublattices connected only by mirror and roto-translational symmetries. Consequently, the system shows even-parity wave spin order in the k-space lifting the Kramer's degeneracy in the non-relativistic band structure. We emphasize that the DMI can create weak ferromagnetism in centrosymmetric altermagnets while it is not effective in centrosymmetric conventional antiferromagnets. Additionally, DMI can create weak ferromagnetism or weak ferrimagnetism in noncentrosymmetric altermagnets. Once the spin-orbit coupling is included in an altermagnetic system without time-reversal symmetry, the components of spin moments of the two sublattices along the Neel vector are antiparallel but the other two spin components orthogonal to the Néel vector can be either parallel or antiparallel for centrosymetric systems. For noncentrosymmetric systems, we can have different bands showing parallel or antiparallel spin components resulting in weak ferrimagnetism. We can divide the altermagnetic compounds into classes based on the weak ferromagnetism or weak ferrimagnetism properties. The weak ferromagnetism and weak ferrimagnetism induced by DMI is a property exclusively of the altermagnets, not present in either ferromagnets or conventional antiferromagnets so we propose that altermagnets should be classified based on this property. △ Less

Submitted 26 December, 2023; v1 submitted 12 December, 2023; originally announced December 2023.

Comments: 14 pages, 10 figure. Suggestions are welcome

Impact of correlations on topology in Kane-Mele model decorated with impurities

Authors: Jan Skolimowski, Wojciech Brzezicki, Carmine Autieri

Abstract: We propose an effective model for the study of the interplay between correlation and topology by decorating the Kane-Mele model with a set of localized interacting orbitals hybridized to just one sublattice, breaking the inversion symmetry. We show that in the time-reversal symmetric case, the interplay between interactions and hybridization extends the stability of the topological phase and depen… ▽ More We propose an effective model for the study of the interplay between correlation and topology by decorating the Kane-Mele model with a set of localized interacting orbitals hybridized to just one sublattice, breaking the inversion symmetry. We show that in the time-reversal symmetric case, the interplay between interactions and hybridization extends the stability of the topological phase and depending on the driving mechanism very different behaviors are observed after the topological phase transition (TPT). We discuss the fate of the TPT in presence of weak ferromagnetic order, by introducing a weak local magnetic field at the localized orbitals, which splits the two band inversion points. One of the platforms to apply this model to are ferrovalley compounds, which are characterized by two independent band inversion points. Understanding this family of materials is crucial for the development of the valleytronics. An alternative to spintronics, which uses valley polarization as opposed to spin degrees of freedom as the building block, promises great opportunities for the development of information storage. △ Less

Submitted 9 January, 2024; v1 submitted 13 November, 2023; originally announced November 2023.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 109, 075147 (2024)

Dirac surface states, multiorbital dimerization and superconductivity in Nb- and Ta-based A15 compounds

Authors: Raghottam M. Sattigeri, Giuseppe Cuono, Ghulam Hussain, Xing Ming, Angelo Di Bernardo, Carmine Attanasio, Mario Cuoco, Carmine Autieri

Abstract: Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level en… ▽ More Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level enhancing the amplitude of the spin Hall conductance. Indeed, despite the moderate spin-orbit of the Nb-compounds, a large spin Hall effect is also obtained in Nb$_3$Ge and Nb$_3$Sn compounds. We show that the Coulomb interaction opens the gap at the R point thus making more evident the occurrence of Dirac surface states. We then investigate the superconducting properties by determining the strength of the electron-phonon BCS coupling. The evolution of the critical temperature is tracked down to the 2D limit indicating a reduction of the transition temperature which mainly arises from the suppression of the density of states at the Fermi level. Finally, we propose a minimal tight-binding model based on three coupled Su-Schrieffer-Heeger chains with t$_{2g}$ Ta- and Nb-orbitals reproducing the spin-orbit splittings at the R point among the $π$-bond bands in this class of compounds. We separate the kinetic parameters in $π$ and $δ$-bonds, in intradimer and interdimer hop**s and discuss their relevance for the topological electronic structure. We point out that Nb$_3$Ge might represent a Z$_2$ topological metal with the highest superconducting temperature ever recorded. △ Less

Submitted 30 October, 2023; v1 submitted 27 October, 2023; originally announced October 2023.

Comments: 16 pages, 12 figures in main text, 3 figures in appendix, Paper submitted to Physical Review B

Journal ref: Phys. Rev. B 109, 075119 (2024)

Huge Dzyaloshinskii-Moriya interactions in Re_Co_Pt thin films

Authors: Amar Fakhredine, Andrzej Wawro, Carmine Autieri

Abstract: We investigate the magnetization and the Dzyaloshinskii-Moriya interactions (DMI) in Pt/Co/Re thin films in the case of perfect interfaces and upon the introduction of intermixing on both Co interfaces. Calculations were implemented on a series of systems with a varied number of cobalt atomic layers (ALs). Remarkably, the Re is able to introduce a DMI at the interface with cobalt and also, increas… ▽ More We investigate the magnetization and the Dzyaloshinskii-Moriya interactions (DMI) in Pt/Co/Re thin films in the case of perfect interfaces and upon the introduction of intermixing on both Co interfaces. Calculations were implemented on a series of systems with a varied number of cobalt atomic layers (ALs). Remarkably, the Re is able to introduce a DMI at the interface with cobalt and also, increase the DMI at the Pt/Co interface. We demonstrate that the chiral magnetic multilayer Pt/Co/Re with chiral spin structure can achieve a huge DMI value which is almost double of that attained in the prototype system W/Co/Pt. We study also the DMI as a function of the Re thickness finding the optimal thickness to maximize the DMI. When we include a disorder that cancels a contribution from all first-neighbor Co atoms in the intermixed region, we found out that intermixing at the two interfaces affects the strength of the DMI solely when introduced at the Pt/Co interface where the DMI loses almost half of its value. On the contrary, the mixing at the Co/Re interface has very little or no effect as compared to the case with perfect interfaces. The value of the DMI would be somewhere between the perfect interface case and the totally intermixed case. The realization of such a device should focus on the reduction of the Pt/Co intermixing to realize this huge DMI interaction. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Journal ref: J. Appl. Phys. 135, 035303 (2024)

Wurtzite vs rock-salt MnSe epitaxy: electronic and altermagnetic properties

Authors: Michał J. Grzybowski, Carmine Autieri, Jarosław Domagała, Cezary Krasucki, Anna Kaleta, Sławomir Kret, Katarzyna Gas, Maciej Sawicki, Rafał Bożek, Jan Suffczyński, Wojciech Pacuski

Abstract: Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits… ▽ More Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and the more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism. △ Less

Submitted 13 September, 2023; v1 submitted 12 September, 2023; originally announced September 2023.

Journal ref: Nanoscale,16, 6259-6267 (2024)

Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states

Authors: Ghulam Hussain, Kinga Warda, Giuseppe Cuono, Carmine Autieri

Abstract: We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, the… ▽ More We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, these distortions increase the band gap but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators, we demonstrate that by increasing the thickness there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulating phase with the presence of two massive surface Dirac fermions hybridized with the persisting trivial surface states. Therefore, we have the co-presence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1=10 nm, and they become spin-orbit insulators between tc1=10 nm and tc2=17 nm, while they transit to the topological phase above the critical thickness of tc2=17 nm. These critical thickness values are in the range of the typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb(1-x)Sn(x)Te nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the do** concentration. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Comments: 10 pages, 9 figures

Interplay between altermagnetism and nonsymmorphic symmetries generating large anomalous Hall conductivity by semi-Dirac points induced anticrossings

Authors: Amar Fakhredine, Raghottam M. Sattigeri, Giuseppe Cuono, Carmine Autieri

Abstract: We investigate the interplay between altermagnetic spin-splitting and nonsymmorphic symmetries using the space group no. 62 as a testbed. Studying different magnetic orders by means of first-principles calculations, we find that the altermagnetism (AM) is present in the C-type magnetic configuration while it is absent for the G-type and A-type configurations due to different magnetic space group t… ▽ More We investigate the interplay between altermagnetic spin-splitting and nonsymmorphic symmetries using the space group no. 62 as a testbed. Studying different magnetic orders by means of first-principles calculations, we find that the altermagnetism (AM) is present in the C-type magnetic configuration while it is absent for the G-type and A-type configurations due to different magnetic space group types. The nonsymmorphic symmetries constrain the system to a four-fold degeneracy at the border of the Brillouin zone with semi-Dirac dispersion. In the case of large hybridization as for transition metal pnictides, the interplay between AM and nonsymmorphic symmetries generates an intricate network of several crossings and anticrossings that we describe in terms of semi-Dirac points and glide symmetries. When we add the spin-orbit coupling (SOC), we find a Neel-vector dependent spin-orbit splitting at the time-reversal invariant momenta points since the magnetic space groups depend on the Neel vector. The magnetic space group type-I produces antiferromagnetic hourglass electrons that disappear in the type-III. When the Neel vector is along x, we observe a glide-protected crossing that could generate a nodal-line in the altermagnetic phase. The SOC splits the remaining band crossings and band anticrossings producing a large anomalous Hall effect in all directions excluding the Neel-vector direction △ Less

Submitted 7 September, 2023; v1 submitted 16 August, 2023; originally announced August 2023.

Journal ref: Phys. Rev. B 108, 115138 (2023)

Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials

Authors: Raghottam M Sattigeri, Giuseppe Cuono, Carmine Autieri

Abstract: The altermagnetism influences the electronic states allowing the presence of non-relativistic spinsplittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface states will be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative spa… ▽ More The altermagnetism influences the electronic states allowing the presence of non-relativistic spinsplittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface states will be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative space groups: tetragonal, orthorhombic and hexagonal. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on the magnetic order. We show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states. △ Less

Submitted 25 July, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 8 pages, 10 figures

Orbital-selective altermagnetism and correlation-enhanced spin-splitting in transition metal oxides

Authors: Giuseppe Cuono, Raghottam M. Sattigeri, Jan Skolimowski, Carmine Autieri

Abstract: We investigate the altermagnetic properties of strongly-correlated transition metal oxides considering the family of the quasi two-dimensional A2BO4 and three-dimensional ABO3. As a test study, we analyze the Mott insulators Ca2RuO4 and YVO3. In both cases, the orbital physics is extremely relevant in the t2g subsector with the presence of an orbital-selective Mott physics in the first case and of… ▽ More We investigate the altermagnetic properties of strongly-correlated transition metal oxides considering the family of the quasi two-dimensional A2BO4 and three-dimensional ABO3. As a test study, we analyze the Mott insulators Ca2RuO4 and YVO3. In both cases, the orbital physics is extremely relevant in the t2g subsector with the presence of an orbital-selective Mott physics in the first case and of a robust orbital-order in the second case. Using first-principles calculations, we show the presence of an orbital-selective altermagnetism in the case of Ca2RuO4. In the case of YVO3, we study the altermagnetism as a function of the magnetic ordering and of the Coulomb repulsion U. We find that the altermagnetism is present in all magnetic orders with the symmetries of the Brillouin zone depending on the magnetic order. Finally, the Coulomb repulsion enhances the non-relativistic spin-splitting making the strongly-correlated systems an exciting playground for the study of the altermagnetism. △ Less

Submitted 30 June, 2023; originally announced June 2023.

Comments: 7 pages, 7 figures

Journal ref: J. Magn. Magn. Mat. 586, 171163 (2023)

Pattern Formation by Electric-field Quench in Mott Crystal

Authors: Nicolas Gauquelin, Filomena Forte, Daen Jannis, Rosalba Fittipaldi, Carmine Autieri, Giuseppe Cuono, Veronica Granata, Mariateresa Lettieri, Canio Noce, Fabio Miletto Granozio, Antonio Vecchione, Johan Verbeeck, Mario Cuoco

Abstract: The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the ins… ▽ More The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field, it is non-volatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of non-volatile electronics based on voltage-controlled nanometric phases. △ Less

Submitted 31 May, 2023; originally announced May 2023.

Comments: 14 pages, 9 figures

Ab-initio overestimation of the topological region in Eu-based compounds

Authors: Giuseppe Cuono, Raghottam M. Sattigeri, Carmine Autieri, Tomasz Dietl

Abstract: An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the… ▽ More An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the computational studies to the whole class of systems EuCd2X2 (X = P, As, Sb, Bi), to EuIn2X2 (X = P, As, Sb), and to nonmagnetic AEIn2As2 (AE= Ca, Sr, Ba) employing a hybrid functional method. We find that our approach provides the magnitude of the energy gap for EuCd2As2 in agreement with the experimental value. Actually, our results indicate that EuSn2As2, BaIn2As2, EuCd2Bi2 and EuCd2SbBi are robust topological insulators, while all other compounds are topologically trivial semiconductors. The trivial band gaps of EuCd2P2, EuCd2As2 and EuCd2Sb2 are in the range of 1.38-1.48 eV, 0.72-0.79 eV and 0.46-0.49 eV, respectively. The topologically trivial Eu-based systems are antiferromagnetic semiconductors with a strong red shift of the energy gap in a magnetic field caused by the exchange coupling of the band states to spins localized on the 4f-shell of Eu ions. Additionally, the EuIn2X2 (X = P, As) compounds show altermagnetic exchange-induced band spin-splitting, particularly noticeable in the case of states derived from 5d-Eu orbitals. △ Less

Submitted 23 August, 2023; v1 submitted 18 May, 2023; originally announced May 2023.

Comments: 16 pages, 18 figures, 1 table

Journal ref: Physical Review B 108, 075150 (2023)

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

Authors: Davide Curcio, Charlotte E. Sanders, Alla Chikina, Henriette E. Lund, Marco Bianchi, Veronica Granata, Marco Cannavacciuolo, Giuseppe Cuono, Carmine Autieri, Filomena Forte, Alfonso Romano, Mario Cuoco, Pavel Dudin, Jose Avila, Craig Polley, Thiagarajan Balasubramanian, Rosalba Fittipaldi, Antonio Vecchione, Philip Hofmann

Abstract: The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potenti… ▽ More The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 12 pages, 14 figures

Interfacial Dzyaloshinskii-Moriya interaction in epitaxial W/Co/Pt multilayers

Authors: Sukanta Kumar Jena, Rajibul Islam, Ewelina Milińska, Marcin M. Jakubowski, Roman Minikayev, Sabina Lewińska, Artem Lynnyk, Aleksiej Pietruczik, Paweł Aleszkiewicz, Carmine Autieri, Andrzej Wawro

Abstract: Dzyaloshinskii-Moriya interaction (DMI) manifesting in asymmetric layered ferromagnetic films gives rise to non-colinear spin structures stabilizing magnetization configurations with nontrivial topology. In this work magnetization reversal, domain structure, and strength of DMI are related with the structure of W/Co/Pt multilayers grown by molecular beam epitaxy. Applied growth method enables fabr… ▽ More Dzyaloshinskii-Moriya interaction (DMI) manifesting in asymmetric layered ferromagnetic films gives rise to non-colinear spin structures stabilizing magnetization configurations with nontrivial topology. In this work magnetization reversal, domain structure, and strength of DMI are related with the structure of W/Co/Pt multilayers grown by molecular beam epitaxy. Applied growth method enables fabrication of layered systems with higher crystalline quality than commonly applied sputtering techniques. As a result, a high value of D coefficient was determined from the aligned magnetic domain stripe structure, substantially exceeding 2 mJ/m2. The highest value of DMI value D$_{eff}$ = 2.64mj/m2 and strength of surface DMI parameter DS = 1.83pJ/m for N=10 has been observed. Experimental results coincide precisely with those obtained from structure based micromagnetic modelling and density functional theory calculations performed for well-defined layered stacks. This high value of DMI strength originates from dominating contributions of the interfacial atomic Co layers and additive character from both interface types. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Journal ref: Nanoscale, 2021,13, 7685-7693

Topological transition in Pb1-xSnxSe using Meta-GGA

Authors: Rajibul Islam, Giuseppe Cuono, Nguyen M. Nguyen, Canio Noce, Carmine Autieri

Abstract: We calculate the mirror Chern number (MCN) and the band gap for the alloy Pb1-xSnxSe as a function of the concentration x by using virtual crystalline approximation. We use the electronic structure from the relativistic density functional theory calculations in the Generalized-Gradient- Approximation (GGA) and meta-GGA approximation. Using the modified Becke-Johnson meta- GGA functional, our resul… ▽ More We calculate the mirror Chern number (MCN) and the band gap for the alloy Pb1-xSnxSe as a function of the concentration x by using virtual crystalline approximation. We use the electronic structure from the relativistic density functional theory calculations in the Generalized-Gradient- Approximation (GGA) and meta-GGA approximation. Using the modified Becke-Johnson meta- GGA functional, our results are comparable with the available experimental data for the MCN as well as for the band gap. We advise to use modified Becke-Johnson approximation with the parameter c=1.10 to describe the transition from trivial to topological phase for this class of compounds. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 5 pages, 5 figures, 1 table. arXiv admin note: text overlap with arXiv:2302.06217

Journal ref: Acta Physica Polonica A 136, 667 (2019)

Mott-Insulator Ca2RuO4 under a static external electric field

Authors: Giuseppe Cuono, Carmine Autieri

Abstract: We have investigated the structural, electronic and magnetic properties of the Mott-insulator Ca2RuO4 under the application of a static external electric field in two regimes: bulk systems at small fields and thin films at large electric fields. Ca2RuO4 presents an S- and L-Pbca phase with short and long c lattice constants and with large and small band gaps, respectively. Using density functional… ▽ More We have investigated the structural, electronic and magnetic properties of the Mott-insulator Ca2RuO4 under the application of a static external electric field in two regimes: bulk systems at small fields and thin films at large electric fields. Ca2RuO4 presents an S- and L-Pbca phase with short and long c lattice constants and with large and small band gaps, respectively. Using density functional perturbation theory, we have calculated the Born effective charges as response functions. Once we break the inversion symmetry by off-centering the Ru atoms, we calculate the piezoelectric properties of the system that suggest an elongation of the system under an electric field. Finally, we investigated a four unit cells slab at larger electric fields and we found insulator-metal transitions induced by the electric field. By looking at the local density of states, we have found that the gap gets closed on surface layers while the rest of the sample is insulating. Correlated to the electric-filed-driven gap closure, there is an increase in the lattice constant c. Regarding the magnetic properties, we have identified two phase transitions in the magnetic moments with one surface that gets completely demagnetized at the largest field investigated. In all cases, the static electric field increases the lattice constant c and reduces the band gap of Ca2RuO4 playing a role in the competition between the L-phase and the S-phase. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 8 pages, 8 figures, 1 table

Journal ref: Materials 2022, 15, 6657

Topological phase diagram of Pb1-xSnxSe1-yTey

Authors: Giuseppe Cuono, Ghulam Hussain, Amar Fakhredine, Carmine Autieri

Abstract: We reproduce the mirror Chern number phase diagram for the quaternary compound Pb1-xSnxSe1-yTey combining accurate density functional theory and tight-biding model. The tight binding models are extracted from ab-initio results, adding constraints to reproduce the experimental results. By using the virtual crystalline approximation, we calculated the mirror Chern number as a function of the concent… ▽ More We reproduce the mirror Chern number phase diagram for the quaternary compound Pb1-xSnxSe1-yTey combining accurate density functional theory and tight-biding model. The tight binding models are extracted from ab-initio results, adding constraints to reproduce the experimental results. By using the virtual crystalline approximation, we calculated the mirror Chern number as a function of the concentrations x and y. We report different hamiltonians depending on whether we want to focus on the experimental band gap or on the experimental topological transition. We calculate the transition line between the trivial insulating phase and topological insulating phase that results in good agreement with the experimental results. Finally, we add in the phase diagram the Weyl phase predicted in the literature providing a complete topological phase diagram for the Pb1-xSnxSe1-yTey quaternary compound. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 7 pages, 4 figures, 3 tables

Journal ref: Acta Physica Polonica A 142, 521 (2022) Acta Physica Polonica A 142, 521 (2022)

Correlation-driven topological transition in Janus VSiGeP2As2

Authors: Ghulam Hussain, Amar Fakhredine, Rajibul Islam, Raghottam M. Sattigeri, Carmine Autieri, Giuseppe Cuono

Abstract: The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the s… ▽ More The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z=P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), while in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials. △ Less

Submitted 14 February, 2023; v1 submitted 10 February, 2023; originally announced February 2023.

Comments: 15 pages, 7 figures, 1 table

Journal ref: Materials 2023, 16(4), 1649

Fast electrically switchable large gap quantum spin Hall states in MGe$_2$Z$_4$

Authors: Rajibul Islam, Ghulam Hussain, Rahul Verma, Mohammad Sadegh Talezadehlari, Zahir Muhammad, Bahadur Singh, Carmine Autieri

Abstract: Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast s… ▽ More Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast switchable QSH state in a newly introduced two-dimensional (2D) material family with 1T$^\prime$-MGe$_2$Z$_4$ (M = Mo or W and Z = P or As). The thermodynamically stable 1T$^\prime$-MoGe$_2$Z$_4$ monolayers have a large energy gap around $\sim$237 meV. These materials undergo a phase transition from a QSH insulator to a trivial insulator with a Rashba-like spin splitting under the influence of an out-of-plane electric field, demonstrating the tunability of the band gap and its band topology. Fast topological phase switching in a large gap 1T$^\prime$-MoGe$_2$Z$_4$ QSH insulators has potential applications in low-power devices, quantum computation, and quantum communication. △ Less

Submitted 13 April, 2023; v1 submitted 11 November, 2022; originally announced November 2022.

Journal ref: Adv. Electron. Mater. 2023, 2300156

Electronic band structure changes across the antiferromagnetic phase transition of exfoliated MnPS$_3$ probed by $μ$-ARPES

Authors: Jeff Strasdas, Benjamin Pestka, Milosz Rybak, Adam K. Budniak, Niklas Leuth, Honey Boban, Vitaliy Feyer, Iulia Cojocariu, Daniel Baranowski, José Avila, Pavel Dudin, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Carmine Autieri, Yaron Amouyal, Lukasz Plucinski, Efrat Lifshitz, Magdalena Birowska, Markus Morgenstern

Abstract: Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS… ▽ More Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the Néel temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements. △ Less

Submitted 22 June, 2023; v1 submitted 10 November, 2022; originally announced November 2022.

Comments: 26 pages, 17 figures

ACM Class: J.2

Journal ref: Nano Lett. 2023, 23, 22, 10342-10349

Engineering axion insulator phase in superlattices with inversion symmetry breaking

Authors: Rajibul Islam, Sougata Mardanya, Alexander Lau, Giuseppe Cuono, Tay-Rong Chang, Bahadur Singh, Carlo M. Canali, Tomasz Dietl, Carmine Autieri

Abstract: We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnT… ▽ More We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnTe, which is the ground state amongst all magnetic configurations. Defining $T$ as the time-reversal symmetry, this axion insulator phase is protected by a magnetic two-fold rotational symmetry $C_2{\cdot}T$. The axion insulator phase evolves into a trivial insulator as we increase the thickness of the magnetic layers. By switching the Néel vector direction into the $ab$ plane, the system realizes different antiferromagnetic topological insulators depending on the thickness of MnTe. These phases feature gapless surface Dirac cones shifted away from high-symmetry points on surfaces perpendicular to the Néel vector direction of the magnetic layers. In the presence of ferromagnetism, the system realizes a magnetic Weyl semimetal and a ferromagnetic semimetal for out-of-plane and in-plane magnetization directions, respectively. We observe large anomalous Hall conductivity in the presence of ferromagnetism in the three-dimensional superlattice. △ Less

Submitted 19 February, 2023; v1 submitted 9 November, 2022; originally announced November 2022.

Comments: 14 pages, 13 figures

Journal ref: Phys. Rev. B 107, 125102 (2023)

Pressure-induced dimerization and molecular orbitals formation in Na2RuO3 with strong correlation-enhanced spin-orbit coupling effect

Authors: Xujia Gong, Wei Wang, Wen Lei, Feng Xiao, Carmine Autieri, Congling Yin, Xing Ming

Abstract: First-principles calculations and simulations are conducted to clarify the nonmagnetic insulating ground state of the honeycomb lattice compound Na2RuO3 with 4d^4 electronic configuration and explore the evolutions of crystal structure and electronic property under pressure. We reveal that individual Coulomb correlation or spin-orbit coupling (SOC) effect cannot reproduce the experimentally observ… ▽ More First-principles calculations and simulations are conducted to clarify the nonmagnetic insulating ground state of the honeycomb lattice compound Na2RuO3 with 4d^4 electronic configuration and explore the evolutions of crystal structure and electronic property under pressure. We reveal that individual Coulomb correlation or spin-orbit coupling (SOC) effect cannot reproduce the experimentally observed nonmagnetic insulating behavior of Na2RuO3, whereas the Coulomb correlation enhanced SOC interactions give rise to an unusual spin-orbital-entangled J = 0 nonmagnetic insulating state, which contrasts with the SOC assisted Mott insulating state in d^5 ruthenates and iridates. Furthermore, a pressure-induced structural dimerization transition has been predicted around 15-17.5 GPa. The honeycomb lattice of the high-pressure dimerized phase features with parallel pattern of the short Ru-Ru dimers aligning along the crystallographic b direction. Accompanied with the structural dimerization, the electronic structure shows striking reconstruction by formation of molecular orbitals. Interestingly, the cooperation of Coulomb correlation together with SOC can realize a nonmagnetic insulating state in the high-pressure dimerized phase. The d^4 ruthenate Na2RuO3 with honeycomb lattice will provide a new platform to explore unusual physics and rich phase diagram due to the delicate interplay of lattice degree of freedom, electron correlations, and SOC interactions. △ Less

Submitted 12 February, 2023; v1 submitted 1 November, 2022; originally announced November 2022.

Comments: 24 pages, 9 figures,

Sign change of the anomalous Hall effect and the anomalous Nernst effect in Weyl semimetal CeAlSi

Authors: Md Shahin Alam, Amar Fakhredine, Mujeeb Ahmed, P. K. Tanwar, Hung-Yu Yang, Fazel Tafti, Giuseppe Cuono, Rajibul Islam, Bahadur Singh, Artem Lynnyk, Carmine Autieri, Marcin Matusiak

Abstract: We report the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) data for the non-collinear Weyl semimetal CeAlSi. The anomalous Hall conductivity (σ_ij^A) was measured for two different orientations of the magnetic field (B), namely σ_yz^A for B II a and σ_xy^A for B II c, where a and c denote the crystallographic axes. We find that σ_xy^A and σ_yz^A are of opposite sign and both a… ▽ More We report the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) data for the non-collinear Weyl semimetal CeAlSi. The anomalous Hall conductivity (σ_ij^A) was measured for two different orientations of the magnetic field (B), namely σ_yz^A for B II a and σ_xy^A for B II c, where a and c denote the crystallographic axes. We find that σ_xy^A and σ_yz^A are of opposite sign and both are large below the Curie temperature (T_C). In the paramagnetic phase, σ_xy^A raises even more and goes through a maximum at T ~ 170 K, whereas the absolute value of σ_yz^A decreases with increasing temperature. The origin of the sign difference between σ_xy^A and σ_yz^A was attributed to the reconstruction of the band structure under the variation of the spin orientation. Further, in a system where humps in the AHE are present and scalar spin chirality is zero, we show that the k-space topology plays an important role to determine the transport properties at both low and high temperatures. We also observed the anomalous contribution in the Nernst conductivity (α_xy^A) measured for B II c. α_xy^A/T turns out to be sizeable in the magnetic phase and above T_C slowly decreases with temperature. We were able to recreate the temperature dependences of σ_xy^A and α_xy^A/T in the paramagnetic phase using a single band toy-model assuming a non-zero Berry curvature in the vicinity of the Weyl node. A decisive factor appears to be a small energy distance between the Fermi level and a Weyl point. △ Less

Submitted 28 February, 2023; v1 submitted 18 October, 2022; originally announced October 2022.

Comments: 37 pages, 11 figures

Journal ref: Phys. Rev. B 107, 085102 (2023)

Orbital order and ferromagnetism in LaMnO3 doped with Ga

Authors: C. Autieri, M. Cuoco, G. Cuono, S. Picozzi, C. Noce

Abstract: We study from first principles the magnetic, electronic, orbital and structural properties of the LaMnO3 doped with gallium replacing the Mn-site. The gallium do** reduces the Jahn-Teller effect, and consequently the bandgap. Surprisingly, the system does not go towards a metallic phase because of the Mn-bandwidth reduction. The Ga-do** tends to reduce the orbital order typical of bulk antifer… ▽ More We study from first principles the magnetic, electronic, orbital and structural properties of the LaMnO3 doped with gallium replacing the Mn-site. The gallium do** reduces the Jahn-Teller effect, and consequently the bandgap. Surprisingly, the system does not go towards a metallic phase because of the Mn-bandwidth reduction. The Ga-do** tends to reduce the orbital order typical of bulk antiferromagnetic LaMnO3 and consequently weakens the antiferromagnetic phase. The Ga-do** favors the G-type orbital order and layered-ordered ferromagnetic perovskite at x=0.50, both effects contribute to the formation of the insulating ferromagnetic phase in LaMn1-xGaxO3. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 9 pages, 5 figures, 5 tables

Journal ref: Physica B Volume 648, 414407 (2023) [OPEN ACCESS]

Unprotected edge modes in quantum spin Hall insulator candidate materials

Authors: Nguyen Minh Nguyen, Giuseppe Cuono, Rajibul Islam, Carmine Autieri, Timo Hyart, Wojciech Brzezicki

Abstract: The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also support additional edge states, which can contribute to the scattering and the transport. We use first-principles calculations to derive an effective tight-binding… ▽ More The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also support additional edge states, which can contribute to the scattering and the transport. We use first-principles calculations to derive an effective tight-binding model for HgTe/CdTe, HgS/CdTe and InAs/GaSb heterostructures, and we show that all these materials support additional edge states which are sensitive to the edge termination. We trace the microscopic origin of these states back to a minimal model supporting flat bands with a nontrivial quantum geometry that gives rise to polarization charges at the edges. We show that the polarization charges transform into the additional edge states when the flat bands are coupled to each other and to the other states to form the Hamiltonian describing the full heterostructure. Interestingly, in the HgTe/CdTe quantum wells the additional edge states are far away from the Fermi level so that they do not contribute to the transport but in the HgS/CdTe and InAs/GaSb heterostructures they appear within the bulk energy gap giving rise to the possibility of multimode edge transport. Finally, we demonstrate that because these additional edge modes are non-topological it is possible to remove them from the bulk energy gap by modifying the edge potential for example with the help of a side gate or chemical do**. △ Less

Submitted 14 September, 2022; originally announced September 2022.

Comments: 11 pages, 9 figures

Switchable large-gap quantum spin Hall state in two-dimensional MSi$_2$Z$_4$ materials class

Authors: Rajibul Islam, Rahul Verma, Barun Ghosh, Zahir Muhammad, Arun Bansil, Carmine Autieri, Bahadur Singh

Abstract: Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict la… ▽ More Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict large bandgap QSH insulators in recently bottom-up synthesized two-dimensional (2D) MSi$_2$Z$_4$ (M = Mo or W and Z = P or As) materials family with $1T^\prime$ structure. A structural distortion in the $2H$ phase drives a band inversion between the metal (Mo/W) $d$ and $p$ states of P/As to realize spinless Dirac cone states without spin-orbit coupling. When spin-orbit coupling is included, a hybridization gap as large as $\sim 204$ meV opens up at the band crossing points, realizing spin-polarized conducting edge states with nearly quantized spin Hall conductivity. We also show that the inverted band gap is tunable with a vertical electric field which drives a topological phase transition from the QSH to a trivial insulator with Rashba-like edge states. Our study identifies 2D MSi$_2$Z$_4$ materials family with $1T^\prime$ structure as large bandgap, tunable QSH insulators with protected spin-polarized edge states and large spin-Hall conductivity. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Comments: 7 Pages, 6 Figures, SM is not included

Emergence of Rashba splitting and spin-valley properties in Janus MoGeSiP2As2 and WGeSiP2As2 monolayers

Authors: Ghulam Hussaina, Abdus Samad, Majeed Ur Rehmanc, Giuseppe Cuono, Carmine Autieri

Abstract: First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K.… ▽ More First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K. In addition, their spin textures exposed that breaking the mirror symmetry brings Rashba-type spin splitting in the systems which can be increased by using higher atomic spin-orbit coupling. The large valley spin splitting together with the Rashba splitting in these Janus monolayer structures can make a remarkable contribution to semiconductor valleytronics and spintronics. △ Less

Submitted 20 June, 2022; originally announced June 2022.

Strain Modulated Electronic and Optical Properties of Laterally Stitched MoSi2N4/XSi2N4 (X=W, Ti) 2D Heterostructures

Authors: Ghulam Hussain, Mumtaz Manzoor, Muhammad Waqas Iqbal, Imran Muhammad, Asadollah Bafekry, Hamid Ullah, Carmine Autieri

Abstract: We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.… ▽ More We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.35 eV, while the MoSi2N4/TiSi2N4-lateral heterostructure (MTLH) revealed metallic behavior. Moreover, the effect of biaxial strain on the electronic and optical properties of MWLH is studied, which indicated substantial modifications in their electronic and optical spectra. In particular, an indirect to direct bandgap semiconducting transition can be achieved in MWLH via compressive strain. Besides, the absorbance, transmittance and reflectance spectra can effectively be tuned by means of biaxial strain. Our findings provide insights into the strain engineering of electronic and optical features, which could pave the way for future nano- and optoelectronic applications. △ Less

Submitted 20 June, 2022; v1 submitted 18 May, 2022; originally announced May 2022.

Comments: 22 paeges, 4 figures

Controlling magnetic exchange and anisotropy by non-magnetic ligand substitution in layered MPX3 (M = Ni, Mn; X = S, Se)

Authors: Rabindra Basnet, K. Kotur, M. Rybak, Cory Stephenson, Samuel Bishop, C. Autieri, M. Birowska, ** Hu

Abstract: Recent discoveries in two-dimensional (2D) magnetism have intensified the investigation of van der Waals (vdW) magnetic materials and further improved our ability to tune their magnetic properties. Tunable magnetism has been widely studied in antiferromagnetic metal thiophosphates MPX3. Substitution of metal ions M has been adopted as an important technique to engineer the magnetism in MPX3. In th… ▽ More Recent discoveries in two-dimensional (2D) magnetism have intensified the investigation of van der Waals (vdW) magnetic materials and further improved our ability to tune their magnetic properties. Tunable magnetism has been widely studied in antiferromagnetic metal thiophosphates MPX3. Substitution of metal ions M has been adopted as an important technique to engineer the magnetism in MPX3. In this work, we have studied the previously unexplored chalcogen X substitutions in MPX3 (M = Mn/Ni; X = S/Se). We synthesized the single crystals of MnPS3-xSex (0 < x < 3) and NiPS3-xSex (0 < x < 1.3) and investigated the systematic evolution of the magnetism with varying x. Our study reveals the effective tuning of magnetic interactions and anisotropies in both MnPS3 and NiPS3 upon Se substitution. Such efficient engineering of the magnetism provides a suitable platform to understand the low-dimensional magnetism and develop future magnetic devices. △ Less

Submitted 9 May, 2022; originally announced May 2022.

Journal ref: Physical Review Research, 4, 023256 (2022)

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Authors: Ghulam Hussain, Giuseppe Cuono, Rajibul Islam, Artur Trajnerowicz, Jarosław Jureńczyk, Carmine Autieri, Tomasz Dietl

Abstract: We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and… ▽ More We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the k$_x$-k$_y$ plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly 5p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors. △ Less

Submitted 18 March, 2022; v1 submitted 11 March, 2022; originally announced March 2022.

Comments: 11 figures, 13 pages

Journal ref: J. Phys. D: Appl. Phys. 55 495301 (2022)

Topological Lifshitz transition in Weyl semimetal NbP decorated with heavy elements

Authors: Ashutosh S Wadge, Bogdan J Kowalski, Carmine Autieri, Przemysław Iwanowski, Andrzej Hruban, Natalia Olszowska, Marcin Rosmus, Jacek Kołodziej, Andrzej Wiśniewski

Abstract: Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cle… ▽ More Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cleaving planes is different: P-terminated surface shows spoon and bow tie shaped fingerprints, whereas these shapes are not present in Nb-terminated surfaces. ARPES studies show that even 1 monolayer (ML) of Pb causes topological quantum Lifshitz transition (TQLT) in P- and Nb-terminated surfaces. Deposited Pb 5d electrons have wide extended atomic orbitals which leads to strong hybridization with Pb-terminated surface and a corresponding shift in the Fermi energy. Nb has less capability to perturb the system than Pb because Nb has weaker spin-orbit coupling than Pb. Nb-terminated surface subjected to surface decoration with approximately 1.3 ML of Nb shows no dramatic modification in the Fermi surface. In the case of Nb decorated P-terminated surface, deposition of approximately 1 ML modifies the electronic structure of NbP and it is on the verge of TQLT. Despite the strong spin-orbit and strong hybridization of the heavy elements on the surface, it is possible to observe the TQLT of the surface states thanks to the robustness of the bulk topology. △ Less

Submitted 4 July, 2022; v1 submitted 12 February, 2022; originally announced February 2022.

Comments: 9 Pages, 8 Figures

Exploring the Structural Stability, Electronic and Thermal Attributes of synthetic 2D Materials and their Heterostructures

Authors: Ghulam Hussain, Mazia Asghar, Muhammad Waqas Iqbal, Hamid Ullah, Carmine Autieri

Abstract: Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra… ▽ More Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra. The XSi2N4 (X= Ti, Mo, W) monolayers, the TiSi2N4/MoSi2N4-LH, MoSi2N4/WSi2N4-LH, and MoSi2N4/WSi2N4-VH possess a semiconducting nature with an indirect band gap ranging from 0.30 to 2.60 eV. At room temperature, the Cv values are found to be between 100 and 416 J/K.mol for the monolayers and their heterostructures, suggesting the better ability to retain heat with respect to transition metal dichalcogenides. Our study unveils the excellent attributes of XSi2N4 2D monolayers and their heterostructures, proposing them as potential candidates in nanoelectronics and thermoelectric applications. △ Less

Submitted 26 January, 2022; originally announced January 2022.

Journal ref: Appl. Surf. Sci. 590, 153131, (2022)

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

Authors: Rajibul Islam, Barun Ghosh, Giuseppe Cuono, Alexander Lau, Wojciech Brzezicki, Arun Bansil, Amit Agarwal, Bahadur Singh, Tomasz Dietl, Carmine Autieri

Abstract: In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced… ▽ More In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring do**, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion. △ Less

Submitted 7 April, 2022; v1 submitted 31 December, 2021; originally announced December 2021.

Comments: 19 pages, 16 figures. Paper accepted in Physical Review Research

Journal ref: Physical Review RESEARCH 4, 023114 (2022)

Limited ferromagnetic interactions in monolayers of MPS$_3$ (M=Mn, Ni)

Authors: Carmine Autieri, Giuseppe Cuono, Canio Noce, Milosz Rybak, Kamila M. Kotur, Cliò Efthimia Agrapidis, Krzysztof Wohlfeld, Magdalena Birowska

Abstract: We present a systematic study of the electronic and magnetic properties of two-dimensional ordered alloys, consisting of two representative hosts (MnPS$_3$ and NiPS$_3$) of transition metal phosphorus trichalcogenides doped with $3d$ elements. For both hosts our DFT+U calculations are able to qualitatively reproduce the ratios and signs of all experimentally observed magnetic couplings. The relati… ▽ More We present a systematic study of the electronic and magnetic properties of two-dimensional ordered alloys, consisting of two representative hosts (MnPS$_3$ and NiPS$_3$) of transition metal phosphorus trichalcogenides doped with $3d$ elements. For both hosts our DFT+U calculations are able to qualitatively reproduce the ratios and signs of all experimentally observed magnetic couplings. The relative strength of all antiferromagnetic exchange couplings, both in MnPS$_3$ as well as in NiPS$_3$, can successfully be explained using an effective direct exchange model: they reveal that the third-neighbor exchange dominates in NiPS$_3$ due to the filling of the $t_{2g}$ subshell, whereas for MnPS$_3$ the first neighbor exchange is prevailed owing to the presence of the $t_{2g}$ magnetism. On the other hand, the nearest neighbor ferromagnetic coupling in NiPS$_3$ can only be explained using a more complex superexchange model and is (also) largely triggered by the absence of the $t_{2g}$ magnetism. For the doped systems, the DFT+U calculations revealed that magnetic impurities do not affect the magnetic ordering observed in the pure phases and thus in general in these systems ferromagnetism may not be easily induced by such a kind of elemental do**. However, unlike for the hosts, the first and second (dopant-host) exchange couplings are of similar order of magnitude. This leads to frustration in case of antiferromagnetic coupling and may be one of the reasons of the observed lower magnetic ordering temperature of the doped systems. △ Less

Submitted 17 March, 2022; v1 submitted 29 November, 2021; originally announced November 2021.

Comments: 15 pages, 8 figures, 3 tables

Report number: Publication Date: April 12, 2022

Journal ref: J. Phys. Chem. C 2022

Pressure-induced structural transition, metallization, and topological superconductivity in PdSSe

Authors: Feng Xiao, Wen Lei, Wei Wang, Carmine Autieri, Xiaojun Zheng, Xing Ming, Jianlin Luo

Abstract: Pressure not only provides a powerful way to tune the crystal structure of transition metal dichalcogenides (TMDCs) but also promotes the discovery of exotic electronic states and intriguing phenomena. Structural transitions from the quasi-two-dimensional layered orthorhombic phase to three-dimensional cubic pyrite phase, metallization, and superconductivity under high pressure have been observed… ▽ More Pressure not only provides a powerful way to tune the crystal structure of transition metal dichalcogenides (TMDCs) but also promotes the discovery of exotic electronic states and intriguing phenomena. Structural transitions from the quasi-two-dimensional layered orthorhombic phase to three-dimensional cubic pyrite phase, metallization, and superconductivity under high pressure have been observed experimentally in TMDCs materials PdS2 and PdSe2. Here, we report a theoretical prediction of the pressure-induced evolutions of crystal structure and electronic structure of PdSSe, an isomorphous intermediate material of the orthorhombic PdS2 and PdSe2. A series of pressure-induced structural phase transitions from the layered orthorhombic structure into an intermediate phase, then to a cubic phase are revealed. The intermediate phase features the same structure symmetry as the ambient orthorhombic phase, except for drastic collapsed interlayer distances and striking changes of the coordination polyhedron. Furthermore, the structural phase transitions are accompanied by electronic structure variations from semiconductor to semimetal, which are attributed to bandwidth broaden and orbital-selective mechanisms. Especially, the cubic phase PdSSe is distinct from the cubic PdS2 and PdSe2 materials by breaking inversion and mirror-plane symmetries, but showing similar superconductivity under high pressure, which is originated from strong electron-phonon coupling interactions concomitant with topologically nontrivial Weyl and high-fold Fermions. The intricate interplay between lattice, charge, and orbital degrees of freedom as well as the topologically nontrivial states in these compounds will further stimulate wide interest to explore the exotic physics of the TMDCs materials. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Comments: 21 pages main text, 6 figures,and Supplemental Material including 12 figures

Double-helix magnetic order in CrAs with Pnma space group

Authors: Giuseppe Cuono, Alfonso Romano, Canio Noce, Carmine Autieri

Abstract: The transition metal pnictide CrAs exhibits superconductivity in the vicinity of a helimagnetic phase, where it has been found that the propagation vector is parallel to the c axis and the magnetic moments lie in the ab plane. Here we use ab initio calculations to study the magnetic interactions in the material. Map** onto a Heisenberg Hamiltonian, we calculate the magnetic exchanges by using LD… ▽ More The transition metal pnictide CrAs exhibits superconductivity in the vicinity of a helimagnetic phase, where it has been found that the propagation vector is parallel to the c axis and the magnetic moments lie in the ab plane. Here we use ab initio calculations to study the magnetic interactions in the material. Map** onto a Heisenberg Hamiltonian, we calculate the magnetic exchanges by using LDA+U calculations and we unveil the origin of the magnetic frustration. Finally, we reproduce the double helix magnetic order with a propagation vector Q = (0, 0, 0.456) and we obtain the magnetic transition temperature TN through Monte-Carlo simulations of the specific heat. Due to the limitations of the use of the Heisenberg Hamiltonian for itinerant magnetic systems, the theoretical TN underestimated the experimental value of the pure CrAs. However, our results are in good agreement with those found for the alloy CrAs0.5Sb0.5 belonging to the same space group, showing that our result can describe this material class. △ Less

Submitted 29 October, 2021; originally announced October 2021.

Comments: 6 pages, 4 figures, 1 table

Journal ref: Acta Phys. Pol. A 141 (1), 35-40 (2022)

Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2

Authors: Wei Wang, Chen Si, Wen Lei, Feng Xiao, Yunhui Liu, Carmine Autieri, Xing Ming

Abstract: Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, a… ▽ More Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even though the Coulomb correlation is taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interaction, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacking undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions by altering the stacking order. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interaction in different stacking arrangements. △ Less

Submitted 17 September, 2021; originally announced September 2021.

Comments: 19 pages, 8 figures,

Journal ref: Phys. Rev. B 105, 035119 (2022)

Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES

Authors: A. S. Wadge, G. Grabecki, C. Autieri, B. J. Kowalski, P. Iwanowski, G. Cuono, M. F. Islam, C. M. Canali, K. Dybko, A. Hruban, A. Łusakowski, T. Wojciechowski, R. Diduszko, A. Lynnyk, N. Olszowska, M. Rosmus, J. Kołodziej, A. Wiśniewski

Abstract: We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$… ▽ More We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-do** of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials. △ Less

Submitted 10 January, 2022; v1 submitted 9 August, 2021; originally announced August 2021.

Comments: 12 pages, 13 figures

Journal ref: J. Phys.: Condens. Matter, 34, 2022,125601

Superexchange dominates in magnetic topological insulators

Authors: Cezary Sliwa, Carmine Autieri, Jacek A. Majewski, Tomasz Dietl

Abstract: It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (th… ▽ More It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (the Bloembergen-Rowland mechanism) leads to antiferromagnetic coupling between pairs of localized spins. Here, we critically revisit these two approaches, show their shortcomings, and elucidate why the magnitude of the interband contribution is small even in topological systems. From the proposed theoretical approach and our computational studies of magnetism in Mn-doped HgTe and CdTe, we conclude that, in the absence of band carriers, the superexchange dominates, and its sign depends on the coordination and charge state of magnetic impurities rather than on the topological class of the host material. △ Less

Submitted 4 February, 2022; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: 12 pages, 4 figures; new version contains extended Supplemental Material

Journal ref: Physical Review B 104, L220404 (2021)

Magnetic instabilities in quasi-one-dimensional Cr-based material

Authors: Armando Galluzzi, Giuseppe Cuono, Alfonso Romano, Jianlin Luo, Carmine Autieri, Canio Noce, Massimiliano Polichetti

Abstract: The magnetic response of a K2Cr3As3 sample has been studied by means of dc magnetization measurements as a function of magnetic field (H) at different temperatures ranging from 5 K up to 300 K. Looking at the magnetic hysteresis loops m(H), a diamagnetic behavior of the sample has been inferred at temperatures higher than 60 K, whereas at lower temperatures the sample shows a hysteresis loop compa… ▽ More The magnetic response of a K2Cr3As3 sample has been studied by means of dc magnetization measurements as a function of magnetic field (H) at different temperatures ranging from 5 K up to 300 K. Looking at the magnetic hysteresis loops m(H), a diamagnetic behavior of the sample has been inferred at temperatures higher than 60 K, whereas at lower temperatures the sample shows a hysteresis loop compatible with the presence of ferrimagnetism. Moreover, several spike-like magnetization jumps, both positive and negative, have been observed at certain fields in the range -1000 Oe < H < 1000 Oe, regardless of the temperature considered. The field position of the magnetization jumps has been studied at different temperatures, and their distribution can be described by a Lorentzian curve. △ Less

Submitted 11 July, 2021; originally announced July 2021.

Comments: 6 pages, 3 figures

Journal ref: Materials 2022, 15(6), 2292

Coupling charge and topological reconstructions at polar oxide interfaces

Authors: T. C. van Thiel, W. Brzezicki, C. Autieri, J. R. Hortensius, D. Afanasiev, N. Gauquelin, D. Jannis, N. Janssen, D. J. Groenendijk, J. Fatermans, S. van Aert, J. Verbeeck, M. Cuoco, A. D. Caviglia

Abstract: In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventiona… ▽ More In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO$_3$, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO$_3$, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO$_2$/SrO interface configuration, leading to excess charge being pinned near the LaAlO$_3$/SrRuO$_3$ interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO$_3$, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 5 pages main text (4 figures), 29 pages of supplementary information

Journal ref: Phys. Rev. Lett. 127, 127202 (2021)

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Authors: Rajibul Islam, Barun Ghosh, Carmine Autieri, Sugata Chowdhury, Arun Bansil, Amit Agarwal, Bahadur Singh

Abstract: Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for develo** new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic structures of ultra-thin films of recently introduced 2D synthetic materials MSi$_2$Z$_4$ (M = Mo or W and Z = N or As) using first-principles modeling. Stacking of MSi… ▽ More Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for develo** new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic structures of ultra-thin films of recently introduced 2D synthetic materials MSi$_2$Z$_4$ (M = Mo or W and Z = N or As) using first-principles modeling. Stacking of MSi$_2$Z$_4$ monolayers is found to generate dynamically stable bilayer and bulk materials with thickness-dependent properties. When spin-orbit coupling (SOC) is included in the computations, MSi$_2$N$_4$ monolayers display indirect bandgaps and large spin-split states at the $K$ and $K'$ symmetry points at the corners of the Brillouin zone with nearly 100\% spin polarization. The spins are locked in opposite directions along an out-of-the-plane direction at $K$ and $K'$, leading to spin-valley coupling effects. As expected, spin polarization is absent in the pristine bilayers due to the presence of inversion symmetry, but it can be induced via an external out-of-plane electric field much like the case of Mo(W)S$_2$ bilayers. A transition from an indirect to a direct bandgap can be driven by replacing N by As in MSi$_2$(N, As)$_4$ monolayers. Our study indicates that the MSi$_2$Z$_4$ materials can provide a viable alternative to the MoS$_2$ class of 2D materials for valleytronics and optoelectronics applications. △ Less

Submitted 23 November, 2021; v1 submitted 6 May, 2021; originally announced May 2021.

Comments: 6 pages, 5 figures, Accepted version in PRB:Letters

Journal ref: Phys. Rev. B 104, L201112 (2021)

Spatially modulated, orbital selective ferromagnetism in La$_5$Co$_2$Ge$_3$

Authors: Giuseppe Cuono, Carmine Autieri, Marcin M. Wysokiński

Abstract: We present density functional theory calculations for low-$T_c$ metallic ferromagnet La$_5$Co$_2$Ge$_3$ at ambient and applied pressures. Our investigations reveal that the system is a quasi-one-dimensional ferromagnet with a peculiar coexistence of two different orbital-selective magnetic moments at two crystallographically inequivalent cobalt atoms, Co1 and Co2. Namely, due to different crystal-… ▽ More We present density functional theory calculations for low-$T_c$ metallic ferromagnet La$_5$Co$_2$Ge$_3$ at ambient and applied pressures. Our investigations reveal that the system is a quasi-one-dimensional ferromagnet with a peculiar coexistence of two different orbital-selective magnetic moments at two crystallographically inequivalent cobalt atoms, Co1 and Co2. Namely, due to different crystal-field splitting, the magnetic moment of Co1 atoms predominantly derives from $d_{xz}$ orbital whereas of Co2 atoms from $d_{xy}$ orbital. Consequently, Co1 and Co2 atoms develop unequal net magnetic moments, a feature that gives rise to a periodic, spatial modulation of magnetization along crystallographic $c$-direction. The amplitude of the spatial modulation, small at ambient pressure, drastically increases with applied pressure, until Co2 atoms become nonmagnetic. With the help of a toy model mimicking found orbital-selective ferromagnetic order, we demonstrate that the increasing amplitude of spatial modulation provides a consistent interpretation to the recently observed resistivity anomaly emerging at applied pressure identified as the appearance of the {\it new state}. Although, proposed here structural origin of the spatial modulation of magnetic moments in La$_5$Co$_2$Ge$_3$ is an alternative one to the advocated for this material ferromagnetic quantum criticality avoidance, the effects of quantum fluctuations can still play an important role at pressure larger than up-to-date measured 5GPa. △ Less

Submitted 14 June, 2021; v1 submitted 9 April, 2021; originally announced April 2021.

Comments: 8 pages, 10 figures

Realization of the Chern insulator and Axion insulator phases in antiferromagnetic $MnTe$-$Bi_2(Se, Te)_3$-$MnTe$ heterostructures

Authors: N. Pournaghavi, M. F. Islam, Rajibul Islam, Carmine Autieri, Tomasz Dietl, C. M. Canali

Abstract: Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te… ▽ More Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te$_3$) TI thin film sandwiched between two antiferromagnetic MnTe layers. We find that an orthogonal exchange field from the MnTe layers, stabilized by a small anisotropy barrier, opens an energy gap of the order of 10 meV at the Dirac point of the TI film. A topological analysis demonstrates that, depending on the relative orientation of the exchange field at the two interfaces, the total Chern number of the system is either ${\cal C} = 1$ or ${\cal C} = 0$, characteristic of the CI and the AI phase, respectively. Non-topological surface states inside the energy-gap region, caused by the interface potential, complicate this identification. Remarkably though, the calculation of the anomalous Hall conductivity shows that such non-topological surface states do not affect the topology-induced transport properties. Given the size of the exchange gap, we estimate that gapless chiral edge states, leading to the quantum anomalous Hall effect, should emerge on the sidewalls of these heterostructures in the CI phase for widths $\ge 200$ nm. We also discuss the possibility of inducing transitions between the CI and the AI phases by means of the spin-orbit torque caused by the spin Hall effect in an adjacent conducting layer. △ Less

Submitted 15 May, 2021; v1 submitted 15 January, 2021; originally announced January 2021.

Comments: 13 pages, 8 figures

Journal ref: Phys. Rev. B 103, 195308 (2021)

Inverse Proximity Effects at Spin-Triplet Superconductor-Ferromagnet Interface

Authors: O. Maistrenko, C. Autieri, G. Livanas, P. Gentile, A. Romano, C. Noce, D. Manske, M. Cuoco

Abstract: We investigate inverse proximity effects in a spin-triplet superconductor (TSC) interfaced with a ferromagnet (FM), assuming different types of magnetic profiles and chiral or helical pairings. The region of the coexistence of spin-triplet superconductivity and magnetism is significantly influenced by the orientation and spatial extension of the magnetization with respect to the spin configuration… ▽ More We investigate inverse proximity effects in a spin-triplet superconductor (TSC) interfaced with a ferromagnet (FM), assuming different types of magnetic profiles and chiral or helical pairings. The region of the coexistence of spin-triplet superconductivity and magnetism is significantly influenced by the orientation and spatial extension of the magnetization with respect to the spin configuration of the Cooper pairs, resulting into clearcut anisotropy signatures. A characteristic mark of the inverse proximity effect arises in the induced spin-polarization at the TSC interface. This is unexpectedly stronger when the magnetic proximity is weaker, thus unveiling immediate detection signatures for spin-triplet pairs. We show that an anomalous magnetic proximity can occur at the interface between the itinerant ferromagnet, SrRuO$_3$, and the unconventional superconductor Sr$_2$RuO$_4$. Such scenario indicates the potential to design characteristic inverse proximity effects in experimentally available SrRuO$_3$-Sr$_2$RuO$_4$ heterostructures and to assess the occurrence of spin-triplet pairs in the highly debated superconducting phase of Sr$_2$RuO$_4$. △ Less

Submitted 10 January, 2021; originally announced January 2021.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. Research 3, 033008 (2021)

Ferromagnetic order of ultra-thin La0.7Ba0.3MnO3 sandwiched between SrRuO3 layers

Authors: Cinthia Piamonteze, Francis Bern, Sridhar Reddy Venkata Avula, Michal Studniarek, Carmine Autieri, Michael Ziese, Ionela Lindfords-Vrejoiu

Abstract: We demonstrate the stability of ferromagnetic order of one unit cell thick optimally doped manganite (La0.7Ba0.3MnO3, LBMO) epitaxially grown between two layers of SrRuO3 (SRO) by using x-ray magnetic circular dichroism. At low temperature LBMO shows an inverted hysteresis loop due to the strong antiferromagnetic coupling to SRO. Moreover, above SRO TC the manganite still exhibits magnetic remanen… ▽ More We demonstrate the stability of ferromagnetic order of one unit cell thick optimally doped manganite (La0.7Ba0.3MnO3, LBMO) epitaxially grown between two layers of SrRuO3 (SRO) by using x-ray magnetic circular dichroism. At low temperature LBMO shows an inverted hysteresis loop due to the strong antiferromagnetic coupling to SRO. Moreover, above SRO TC the manganite still exhibits magnetic remanence. Density Functional Theory calculations show that coherent interfaces of LBMO with SRO hinder electronic confinement and the strong magnetic coupling enables the increase of the LBMO TC. From the structural point of view, interfacing with SRO enables LBMO to have octahedral rotations similar to bulk. All these factors jointly contribute for stable ferromagnetism up to 130 K for a one unit cell LBMO film. △ Less

Submitted 6 January, 2021; originally announced January 2021.

Journal ref: Appl. Phys. Lett. 118, 152408 (2021)

Superconductivity induced by structural reorganization in the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_4$

Authors: Anita Guarino, Carmine Autieri, Pasquale Marra, Antonio Leo, Gaia Grimaldi, Adolfo Avella, Angela Nigro

Abstract: Electron-doped and hole-doped superconducting cuprates exhibit a symmetric phase diagram as a function of do**. This symmetry is however only approximate. Indeed, electron-doped cuprates become superconductors only after a specific annealing process: This annealing affects the oxygen content by only a tiny amount, but has a dramatic impact on the electronic properties of the sample. Here we repo… ▽ More Electron-doped and hole-doped superconducting cuprates exhibit a symmetric phase diagram as a function of do**. This symmetry is however only approximate. Indeed, electron-doped cuprates become superconductors only after a specific annealing process: This annealing affects the oxygen content by only a tiny amount, but has a dramatic impact on the electronic properties of the sample. Here we report the occurrence of superconductivity in oxygen-deficient Nd$_{2-x}$Ce$_x$CuO$_4$ thin films grown in an oxygen-free environment, after annealing in pure argon flow. As verified by x-ray diffraction, annealing induces an increase of the interlayer distance between CuO$_2$ planes in the crystal structure. Since this distance is correlated to the concentration of oxygens in apical positions, and since oxygen content cannot substantially increase during annealing, our experiments indicate that the superconducting phase transition has to be ascribed to a migration of oxygen ions to apical positions during annealing. Moreover, as we confirm via first-principles density functional theory calculations, the changes in the structural and transport properties of the films can be theoretically described by a specific redistribution of the existing oxygen ions at apical positions with respect to CuO$_2$ planes, which remodulates the electronic band structure and suppresses the antiferromagnetic order, allowing the emergence of hole superconductivity. △ Less

Submitted 9 February, 2022; v1 submitted 24 December, 2020; originally announced December 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 105, 014512 - Published 19 January 2022

Dimensionality of the superconductivity in the transition metal pnictide WP

Authors: Angela Nigro, Giuseppe Cuono, Pasquale Marra, Antonio Leo, Gaia Grimaldi, Ziyi Liu, Zhenyu Mi, Wei Wu, Guangtong Liu, Carmine Autieri, Jianlin Luo, Canio Noce

Abstract: We report theoretical and experimental results on the transition metal pnictide WP. The theoretical outcomes based on tight-binding calculations and density functional theory indicate that WP is a three-dimensional superconductor with an anisotropic electronic structure and nonsymmorphic symmetries. On the other hand, magnetoresistance experimental data and the analysis of superconducting fluctuat… ▽ More We report theoretical and experimental results on the transition metal pnictide WP. The theoretical outcomes based on tight-binding calculations and density functional theory indicate that WP is a three-dimensional superconductor with an anisotropic electronic structure and nonsymmorphic symmetries. On the other hand, magnetoresistance experimental data and the analysis of superconducting fluctuations of the conductivity in external magnetic field indicate a weakly anisotropic three-dimensional superconducting phase. △ Less

Submitted 9 February, 2022; v1 submitted 16 September, 2020; originally announced September 2020.

Comments: 9 pages, 9 figures

Journal ref: Materials 2022, 15(3), 1027

Topologically-Driven Linear Magnetoresistance in Helimagnetic FeP

Authors: D. J. Campbell, J. Collini, J. Slawinska, C. Autieri, L. Wang, K. Wang, B. Wilfong, Y. S. Eo, P. Neves, D. Graf, E. E. Rodriguez, N. P. Butch, M. Buongiorno Nardelli, J. Paglione

Abstract: The helimagnet FeP is part of a family of binary pnictide materials with the MnP-type structure which share a nonsymmorphic crystal symmetry that preserves generic band structure characteristics through changes in elemental composition. It shows many similarities, including in its magnetic order, to isostructural CrAs and MnP, two compounds that are driven to superconductivity under applied pressu… ▽ More The helimagnet FeP is part of a family of binary pnictide materials with the MnP-type structure which share a nonsymmorphic crystal symmetry that preserves generic band structure characteristics through changes in elemental composition. It shows many similarities, including in its magnetic order, to isostructural CrAs and MnP, two compounds that are driven to superconductivity under applied pressure. Here we present a series of high magnetic field experiments on high quality single crystals of FeP, showing that the resistance not only increases without saturation by up to several hundred times its zero field value by 35 T, but that it also exhibits an anomalously linear field dependence over the entire field range when the field is aligned precisely along the crystallographic c-axis. A close comparison of quantum oscillation frequencies to electronic structure calculations links this orientation to a semi-Dirac point in the band structure which disperses linearly in a single direction in the plane perpendicular to field, a symmetry-protected feature of this entire material family. We show that the two striking features of MR-large amplitude and linear field dependence-arise separately in this system, with the latter likely due to a combination of ordered magnetism and topological band structure. △ Less

Submitted 30 January, 2021; v1 submitted 13 September, 2020; originally announced September 2020.

Comments: 10 pages, 6 figures

Journal ref: npj Quantum Materials volume 6, Article number: 38 (2021)