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Identifying Many-Body Localization in Realistic Dot Arrays
Authors:
Alexander Nico-Katz,
Gulzat Jaliel,
Paola Atkinson,
Thomas A. Mitchell,
David A. Ritchie,
Charles G. Smith,
Sougato Bose
Abstract:
We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our exper…
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We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our experimental system, we find that many-body localization can potentially be detected in current-generation quantum dot arrays. A pitfall that we identify is that the freezing of a system due to strong interactions yields signatures similar to conventional localization. We find that the most widely-used experimental signature of localization - the imbalance - is not sensitive to this fact, and may be unsuitable as the lone identifier of the many-body localized regime.
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Submitted 19 January, 2023;
originally announced January 2023.
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Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots
Authors:
David Fricker,
Paola Atkinson,
Mihail I Lepsa,
Zheng Zeng,
András Kovács,
Lidia Kibkalo,
Rafal E Dunin-Borkowski,
Beata E. Kardynał
Abstract:
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of p…
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Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of photoluminescence excitation spectroscopy, lifetime measurements, and transmission electron microscopy to identify the presence of an InGaAs wetting layer in these droplet epitaxy quantum dots, even in the absence of distinguishable wetting layer photoluminescence. We observe that increasing the amount of Ga deposited on a GaAs (100) surface prior to the growth of InGaAs quantum dots leads to a significant reduction in the emission wavelength of the wetting layer to the point where it can no longer be distinguished from the GaAs acceptor peak emission in photoluminescence measurements.
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Submitted 4 June, 2022;
originally announced June 2022.
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Thermal conductivity of Bi$_2$Se$_3$ from bulk to thin films: theory and experiment
Authors:
Lorenzo Paulatto,
Danièle Fournier,
Massimiliano Marangolo,
Mahmoud Eddrief,
Paola Atkinson,
Matteo Calandra
Abstract:
We calculate the lattice-driven in-plane $(κ_{\parallel})$ and out-of-plane $(κ_{\perp})$ thermal conductivities of Bi$_2$Se$_3$ bulk, and of films of different thicknesses, using the Boltzmann equation with phonon scattering times obtained from anharmonic third order density functional perturbation theory.
We compare our results for the lattice component of the thermal conductivity with publish…
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We calculate the lattice-driven in-plane $(κ_{\parallel})$ and out-of-plane $(κ_{\perp})$ thermal conductivities of Bi$_2$Se$_3$ bulk, and of films of different thicknesses, using the Boltzmann equation with phonon scattering times obtained from anharmonic third order density functional perturbation theory.
We compare our results for the lattice component of the thermal conductivity with published data for $κ_{\parallel}$ on bulk samples and with our room-temperature thermoreflectance measurements of $κ_{\perp}$ on films of thickness (L) ranging from 18~nm to 191~nm, where the lattice component has been extracted via the Wiedemann-Franz law. Ab-initio theoretical calculations on bulk samples, including an effective model to account for finite sample thickness and defect scattering, compare favorably both for the bulk case (from literature) and thin films (new measurements). In the low-T limit the theoretical in-plane lattice thermal conductivity of bulk Bi$_2$Se$_3$ agrees with previous measurements by assuming the occurrence of intercalated Bi$_2$ layer defects. The measured thermal conductivity monotonically decreases by reducing $L$, its value is $κ_{\perp}\approx 0.39\pm 0.08$~W/m$\cdot$K for $L=18$ nm and $κ_{\perp}=0.68\pm0.14$~W/m$\cdot$K for $L=191$ nm. We show that the decrease of room-temperature $κ_{\perp}$ in Bi$_2$Se$_3$ thin films as a function of sample thickness can be explained by the incoherent scattering of out-of-plane momentum phonons with the film surface. Our work outlines the crucial role of sample thinning in reducing the out-of-plane thermal conductivity.
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Submitted 23 March, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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High spectral resolution of GaAs/AlAs phononic cavities by subharmonic resonant pump-probe excitation
Authors:
Camille Lagoin,
Bernard Perrin,
Paola Atkinson,
Daniel Garcia-Sanchez
Abstract:
We present here precise measurement of the resonance frequency, lifetime and shape of confined acoustic modes in the tens of GHz regime in GaAs/AlAs superlattice planar and micropillar cavities at low temperature ($\sim 20\,\textrm{K}$). The subharmonic resonant pump-probe technique, where the repetition rate of the pump laser is tuned to a subharmonic of the cavity resonance to maximize the ampli…
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We present here precise measurement of the resonance frequency, lifetime and shape of confined acoustic modes in the tens of GHz regime in GaAs/AlAs superlattice planar and micropillar cavities at low temperature ($\sim 20\,\textrm{K}$). The subharmonic resonant pump-probe technique, where the repetition rate of the pump laser is tuned to a subharmonic of the cavity resonance to maximize the amplitude of the acoustic resonance, in combination with a Sagnac interferometer technique for high sensitivity ($\sim 10 \,\textrm{fm}$) to the surface displacement, has been used. The cavity fundamental mode at $\sim 20\,\textrm{GHz}$ and the higher order cavity harmonics up to $\sim 180\,\textrm{GHz}$ have been clearly resolved. Mechanical Q-values up to $2.7 \times 10^4$ have been measured in a planar superlattice, and direct spatial map** of confined acoustic modes in a superlattice cavity micropillar has been demonstrated. The Q-frequency product obtained is $ \sim 5 \times 10^{14}$ demonstrating the suitability of these superlattice cavities for optomechanical applications.
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Submitted 22 September, 2018;
originally announced September 2018.
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Spin-Orbit induced phase-shift in Bi$_{2}$Se$_{3}$ Josephson junctions
Authors:
Alexandre Assouline,
Cheryl Feuillet-Palma,
Nicolas Bergeal,
Tianzhen Zhang,
Alireza Mottaghizadeh,
Alexandre Zimmers,
Emmanuel Lhuillier,
Mahmoud Eddrief,
Paola Atkinson,
Marco Aprili,
Herve Aubin
Abstract:
The transmission of Cooper pairs between two weakly coupled superconductors produces a superfluid current and a phase difference; the celebrated Josephson effect. Because of time-reversal and parity symmetries, there is no Josephson current without a phase difference between two superconductors. Reciprocally, when those two symmetries are broken, an anomalous supercurrent can exist in the absence…
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The transmission of Cooper pairs between two weakly coupled superconductors produces a superfluid current and a phase difference; the celebrated Josephson effect. Because of time-reversal and parity symmetries, there is no Josephson current without a phase difference between two superconductors. Reciprocally, when those two symmetries are broken, an anomalous supercurrent can exist in the absence of phase bias or, equivalently, an anomalous phase shift $\varphi_0$ can exist in the absence of a superfluid current. We report on the observation of an anomalous phase shift $\varphi_0$ in hybrid Josephson junctions fabricated with the topological insulator Bi$_2$Se$_3$ submitted to an in-plane magnetic field. This anomalous phase shift $\varphi_0$ is observed directly through measurements of the current-phase relationship in a Josephson interferometer. This result provides a direct measurement of the spin-orbit coupling strength and open new possibilities for phase-controlled Josephson devices made from materials with strong spin-orbit coupling.
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Submitted 25 January, 2019; v1 submitted 4 June, 2018;
originally announced June 2018.
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Magnetic Levitation Stabilized by Streaming Fluid Flows
Authors:
K. A. Baldwin,
J. -B. de Fouchier,
P. Atkinson,
R. J. A. Hill,
M. R. Swift,
D. J. Fairhurst
Abstract:
We demonstrate that the ubiquitous laboratory magnetic stirrer provides a simple passive method of magnetic levitation, in which the so-called `flea' levitates indefinitely. We study the onset of levitation and quantify the flea's motion (a combination of vertical oscillation, spinning and "waggling"), finding excellent agreement with a mechanical analytical model. The waggling motion drives recir…
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We demonstrate that the ubiquitous laboratory magnetic stirrer provides a simple passive method of magnetic levitation, in which the so-called `flea' levitates indefinitely. We study the onset of levitation and quantify the flea's motion (a combination of vertical oscillation, spinning and "waggling"), finding excellent agreement with a mechanical analytical model. The waggling motion drives recirculating flow, producing a centripetal reaction force that stabilises the flea. Our findings have implications for the locomotion of artificial swimmers, for the development of bidirectional microfluidic pumps and provide an alternative to sophisticated commercial levitators.
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Submitted 24 May, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Multiharmonic frequency-chirped transducers for surface-acoustic-wave optomechanics
Authors:
Matthias Weiß,
Andreas L. Hörner,
Eugenio Zallo,
Paola Atkinson,
Armando Rastelli,
Oliver G. Schmidt,
Achim Wixforth,
Hubert J. Krenner
Abstract:
Wide passband interdigital transducers are employed to establish a stable phase-lock between a train of laser pulses emitted by a mode-locked laser and a surface acoustic wave generated electrically by the transducer. The transducer design is based on a multi-harmonic split-finger architecture for the excitation of a fundamental surface acoustic wave and a discrete number of its overtones. Simply…
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Wide passband interdigital transducers are employed to establish a stable phase-lock between a train of laser pulses emitted by a mode-locked laser and a surface acoustic wave generated electrically by the transducer. The transducer design is based on a multi-harmonic split-finger architecture for the excitation of a fundamental surface acoustic wave and a discrete number of its overtones. Simply by introducing a variation of the transducer's periodicity $p$, a frequency chirp is added. This combination results in wide frequency bands for each harmonic. The transducer's conversion efficiency from the electrical to the acoustic domain was characterized optomechanically using single quantum dots acting as nanoscale pressure sensors. The ability to generate surface acoustic waves over a wide band of frequencies enables advanced acousto-optic spectroscopy using mode-locked lasers with fixed repetition rate. Stable phase-locking between the electrically generated acoustic wave and the train of laser pulses was confirmed by performing stroboscopic spectroscopy on a single quantum dot at a frequency of 320 MHz. Finally, the dynamic spectral modulation of the quantum dot was directly monitored in the time domain combining stable phase-locked optical excitation and time-correlated single photon counting. The demonstrated scheme will be particularly useful for the experimental implementation of surface acoustic wave-driven quantum gates of optically addressable qubits or collective quantum states or for multi-component Fourier synthesis of tailored nanomechanical waveforms.
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Submitted 29 October, 2017; v1 submitted 1 August, 2017;
originally announced August 2017.
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Acoustic confinement in superlattice cavities
Authors:
Daniel Garcia-Sanchez,
Samuel Déleglise,
Jean-Louis Thomas,
Paola Atkinson,
Camille Lagoin,
Bernard Perrin
Abstract:
The large coupling rate between the acoustic and optical fields confined in GaAs/AlAs superlattice cavities makes them appealing systems for cavity optomechanics. We have developed a mathematical model based on the scattering matrix that allows the acoustic guided modes to be predicted in nano and micropillar superlattice cavities. We demonstrate here that the reflection at the surface boundary co…
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The large coupling rate between the acoustic and optical fields confined in GaAs/AlAs superlattice cavities makes them appealing systems for cavity optomechanics. We have developed a mathematical model based on the scattering matrix that allows the acoustic guided modes to be predicted in nano and micropillar superlattice cavities. We demonstrate here that the reflection at the surface boundary considerably modifies the acoustic quality factor and leads to significant confinement at the micropillar center. Our mathematical model also predicts unprecedented acoustic Fano resonances on nanopillars featuring small mode volumes and very high mechanical quality factors, making them attractive systems for optomechanical applications.
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Submitted 28 September, 2016; v1 submitted 7 June, 2016;
originally announced June 2016.
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Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination
Authors:
M. Debiossac,
P. Atkinson,
A. Zugarramurdi,
M. Eddrief,
F. Finocchi,
V. H. Etgens,
A. Momeni,
H. Khemliche,
A. G. Borisov,
P. Roncin
Abstract:
Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the…
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Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the He atom beam incident along the highly corrugated $[ 1\bar{1}0 ]$ direction of the $β_{2}$(2$\times$4) reconstructed GaAs(001) surface are summarized and complemented by the measurements and calculations for the beam incidence along the weakly corrugated [010] direction where a periodicity twice smaller as expected is observed. The combination of the experiment, quantum scattering matrix calculations, and semiclassical analysis allows in this case to reveal structural characteristics of the surface. For the in situ measurements of GIFAD during molecular beam epitaxy of GaAs on GaAs surface we analyse the change in elastic and inelastic contributions in the scattered beam, and the variation of the diffraction pattern in polar angle scattering. This analysis outlines the robustness, the simplicity and the richness of the GIFAD as a technique to monitor the layer-by-layer epitaxial growth.
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Submitted 30 December, 2015;
originally announced December 2015.
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Fourier synthesis of radio frequency nanomechanical pulses with different shapes
Authors:
Florian J. R. Schülein,
Eugenio Zallo,
Paola Atkinson,
Oliver G. Schmidt,
Rinaldo Trotta,
Armando Rastelli,
Achim Wixforth,
Hubert J. Krenner
Abstract:
The concept of Fourier synthesis is heavily employed in both consumer electronic products and fundamental research. In the latter, pulse sha** is key to dynamically initialize, probe and manipulate the state of classical or quantum systems. In nuclear magnetic resonance, for instance, shaped pulses have a long-standing tradition and the underlying fundamental concepts have subsequently been succ…
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The concept of Fourier synthesis is heavily employed in both consumer electronic products and fundamental research. In the latter, pulse sha** is key to dynamically initialize, probe and manipulate the state of classical or quantum systems. In nuclear magnetic resonance, for instance, shaped pulses have a long-standing tradition and the underlying fundamental concepts have subsequently been successfully extended to optical frequencies and even to implement quantum gate operations. Transferring these paradigms to nanomechanical systems requires tailored nanomechanical waveforms. Here, we report on an additive Fourier synthesizer for nanomechanical waveforms based on monochromatic surface acoustic waves. As a proof of concept, we electrically synthesize four different elementary nanomechanical waveforms from a fundamental surface acoustic wave at $ f_1 \sim 150$ MHz using a superposition of up to three discrete harmonics $f_n$. We employ these shaped pulses to interact with an individual sensor quantum dot and detect their deliberately and temporally modulated strain component via the opto-mechanical quantum dot response. Importantly, and in contrast to the direct mechanical actuation by bulk piezoactuators, surface acoustic waves provide much higher frequencies (> 20 GHz) to resonantly drive mechanical motion. Thus, our technique uniquely allows coherent mechanical control of localized vibronic modes of optomechanical crystals, even in the quantum limit when cooled to the vibrational ground state.
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Submitted 12 January, 2016; v1 submitted 2 December, 2014;
originally announced December 2014.
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An artificial atom locked to natural atoms
Authors:
N. Akopian,
R. Trotta,
E. Zallo,
S. Kumar,
P. Atkinson,
A. Rastelli,
O. G. Schmidt,
V. Zwiller
Abstract:
Single-photon sources that emit photons at the same energy play a key role in the emerging concepts of quantum information, such as entanglement swap**, quantum teleportation and quantum networks. They can be realized in a variety of systems, where semiconductor quantum dots, or 'artificial atoms', are arguably among the most attractive. However, unlike 'natural atoms', no two artificial atoms a…
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Single-photon sources that emit photons at the same energy play a key role in the emerging concepts of quantum information, such as entanglement swap**, quantum teleportation and quantum networks. They can be realized in a variety of systems, where semiconductor quantum dots, or 'artificial atoms', are arguably among the most attractive. However, unlike 'natural atoms', no two artificial atoms are alike. This peculiarity is a serious hurdle for quantum information applications that require photonic quantum states with identical energies. Here we demonstrate a single artificial atom that generates photons with an absolute energy that is locked to an optical transition in a natural atom. Furthermore, we show that our system is robust and immune to drifts and fluctuations in the environment of the emitter. Our demonstration is crucial for realization of a large number of universally-indistinguishable solid-state systems at arbitrary remote locations, where frequency-locked artificial atoms might become fundamental ingredients.
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Submitted 8 February, 2013;
originally announced February 2013.
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Universal recovery of the bright-exciton level-degeneracy in quantum dots without structural symmetry
Authors:
R. Trotta,
E. Zallo,
C. Ortix,
P. Atkinson,
J. D. Plumhof,
J. van den Brink,
A. Rastelli,
O. G. Schmidt
Abstract:
The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We demonstrate experimentally and theoretically that it is always possible to restore the excitonic degeneracy by the simultaneous application of large strain and electric f…
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The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We demonstrate experimentally and theoretically that it is always possible to restore the excitonic degeneracy by the simultaneous application of large strain and electric fields, despite the fact that this possibility has fundamentally been doubted. This is achieved by using one external perturbation to align the polarization of the exciton emission along the axis of the second perturbation, which then erases completely the energy splitting of the states. This result, which holds for any QD structure, highlights the potential of combining complementary external fields to create artificial atoms meeting the stringent requirements posed by scalable semiconductor-based quantum-technology.
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Submitted 7 June, 2012;
originally announced June 2012.
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Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime
Authors:
L. H. Ho,
L. J. Taskinen,
A. P. Micolich,
A. R. Hamilton,
P. Atkinson,
D. A. Ritchie
Abstract:
The hysteresis observed in the magnetoresistance of bilayer 2D systems in the quantum Hall regime is generally attributed to the long time constant for charge transfer between the 2D systems due to the very low conductivity of the quantum Hall bulk states. We report electrometry measurements of a bilayer 2D system that demonstrate that the hysteresis is instead due to non-equilibrium induced curre…
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The hysteresis observed in the magnetoresistance of bilayer 2D systems in the quantum Hall regime is generally attributed to the long time constant for charge transfer between the 2D systems due to the very low conductivity of the quantum Hall bulk states. We report electrometry measurements of a bilayer 2D system that demonstrate that the hysteresis is instead due to non-equilibrium induced current. This finding is consistent with magnetometry and electrometry measurements of single 2D systems, and has important ramifications for understanding hysteresis in bilayer 2D systems.
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Submitted 28 September, 2010;
originally announced September 2010.
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Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna
Authors:
Markus Pfeiffer,
Klas Lindfors,
Christian Wolpert,
Paola Atkinson,
Mohamed Benyoucef,
Armando Rastelli,
Oliver G. Schmidt,
Harald Giessen,
Markus Lippitz
Abstract:
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of eight. Spectrally and temporally resolved photoluminescence measurements prove an increase of the quantum dot's excitation rate. The combination of stable epitaxi…
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We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of eight. Spectrally and temporally resolved photoluminescence measurements prove an increase of the quantum dot's excitation rate. The combination of stable epitaxial quantum emitters and plasmonic nanostructures promises to be highly beneficial for nanoscience and quantum optics.
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Submitted 21 July, 2010;
originally announced July 2010.
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Charge and spin state readout of a double quantum dot coupled to a resonator
Authors:
K. D. Petersson,
C. G. Smith,
D. Anderson,
P. Atkinson,
G. A. C. Jones,
D. A. Ritchie
Abstract:
State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive techniqu…
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State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive technique for measuring charge and spin states in quantum dot systems without requiring a separate mesoscopic detector.
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Submitted 22 April, 2010;
originally announced April 2010.
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Electrometry using the quantum Hall effect in a bilayer 2D electron system
Authors:
L. H. Ho,
L. J. Taskinen,
A. P. Micolich,
A. R. Hamilton,
P. Atkinson,
D. A. Ritchie
Abstract:
We discuss the development of a sensitive electrometer that utilizes a two-dimensional electron gas (2DEG) in the quantum Hall regime. As a demonstration, we measure the evolution of the Landau levels in a second, nearby 2DEG as the applied perpendicular magnetic field is changed, and extract an effective mass for electrons in GaAs that agrees within experimental error with previous measurements.
We discuss the development of a sensitive electrometer that utilizes a two-dimensional electron gas (2DEG) in the quantum Hall regime. As a demonstration, we measure the evolution of the Landau levels in a second, nearby 2DEG as the applied perpendicular magnetic field is changed, and extract an effective mass for electrons in GaAs that agrees within experimental error with previous measurements.
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Submitted 25 March, 2010;
originally announced March 2010.
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Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits
Authors:
K. D. Petersson,
C. G. Smith,
D. Anderson,
P. Atkinson,
G. A. C. Jones,
D. A. Ritchie
Abstract:
We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using p…
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We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency whilst varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.
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Submitted 14 July, 2009;
originally announced July 2009.
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Post-selective two-photon interference from a continuous non-classical stream of photons emitted by a quantum dot
Authors:
R. B. Patel,
A. J. Bennett,
K. Cooper,
P. Atkinson,
C. A. Nicoll,
D. A. Ritchie,
A. J. Shields
Abstract:
We report an electrically driven semiconductor single photon source capable of emitting photons with a coherence time of up to 400 ps under fixed bias. It is shown that increasing the injection current causes the coherence time to reduce and this effect is well explained by the fast modulation of a fluctuating environment. Hong-Ou-Mandel type two-photon interference using a Mach-Zehnder interfer…
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We report an electrically driven semiconductor single photon source capable of emitting photons with a coherence time of up to 400 ps under fixed bias. It is shown that increasing the injection current causes the coherence time to reduce and this effect is well explained by the fast modulation of a fluctuating environment. Hong-Ou-Mandel type two-photon interference using a Mach-Zehnder interferometer is demonstrated using this source to test the indistinguishability of individual photons by post-selecting events where two photons collide at a beamsplitter. Finally, we consider how improvements in our detection system can be used to achieve a higher interference visibility.
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Submitted 11 April, 2008;
originally announced April 2008.
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Indistinguishable photons from a diode
Authors:
A. J. Bennett,
R. B. Patel,
A. J. Shields,
K. Cooper,
P. Atkinson,
C. A. Nicoll,
D. A. Ritchie
Abstract:
We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energy on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visib…
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We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energy on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visibility of 64%.
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Submitted 26 March, 2008;
originally announced March 2008.
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Oxide-apertured microcavity single-photon emitting diode
Authors:
D. J. P. Ellis,
A. J. Bennett,
A. J. Shields,
P. Atkinson,
D. A. Ritchie
Abstract:
We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Lateral confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity struc…
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We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Lateral confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity structures with doped contact layers, we demonstrate a single-photon emitting diode where current may be injected into a single dot.
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Submitted 13 September, 2007;
originally announced September 2007.
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Observation of the Purcell effect in high-index-contrast micropillar
Authors:
A. J. Bennett,
D. J. P. Ellis,
A. J. Shields,
P. Atkinson,
I. Farrer,
D. A. Ritchie
Abstract:
We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer repeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavi…
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We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer repeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavity and here report observation of a three fold enhancement in the radiative lifetime of a quantum dot exciton state due to the Purcell effect.
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Submitted 13 September, 2007;
originally announced September 2007.
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Experimental position-time entanglement with degenerate single photons
Authors:
A. J. Bennett,
D. G. Gevaux,
Z. L. Yuan,
A. J. Shields,
P. Atkinson,
D. A. Ritchie
Abstract:
We report an experiment in which two-photon interference occurs between degenerate single photons that never meet. The two photons travel in opposite directions through our fibre-optic interferometer and interference occurs when the photons reach two different, spatially separated, 2-by-2 couplers at the same time. We show that this experiment is analogous to the conventional Franson-type entang…
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We report an experiment in which two-photon interference occurs between degenerate single photons that never meet. The two photons travel in opposite directions through our fibre-optic interferometer and interference occurs when the photons reach two different, spatially separated, 2-by-2 couplers at the same time. We show that this experiment is analogous to the conventional Franson-type entanglement experiment where the photons are entangled in position and time. We measure wavefunction overlaps for the two photons as high as 94 $\pm$ 3%.
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Submitted 6 February, 2008; v1 submitted 6 September, 2007;
originally announced September 2007.
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Quantisation of Hop** Magnetoresistance Prefactor in Strongly Correlated Two-Dimensional Electron Systems
Authors:
Matthias Baenninger,
Arindam Ghosh,
Michael Pepper,
Harvey E. Beere,
Ian Farrer,
Paula Atkinson,
Dave A. Ritchie
Abstract:
We report an universal behaviour of hop** transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the expected relation $ρ(B_\perp) = ρ_{\rm{B}}\exp(αB_\perp^2)$. The prefactor $ρ_{\rm{B}}$ decreases exponentially with increasing electron density but saturates…
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We report an universal behaviour of hop** transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the expected relation $ρ(B_\perp) = ρ_{\rm{B}}\exp(αB_\perp^2)$. The prefactor $ρ_{\rm{B}}$ decreases exponentially with increasing electron density but saturates to a finite value at higher densities. Strikingly, this value is found to be universal when expressed in terms of absolute resistance and and shows quantisation at $R_{\rm{B}}\approx h/e^2$ and $R_{\rm{B}}\approx 1/2$ $ h/e^2$. We suggest a strongly correlated electronic phase as a possible explanation.
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Submitted 27 July, 2007; v1 submitted 24 July, 2007;
originally announced July 2007.
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Surface-acoustic-wave-driven luminescence from a lateral p-n junction
Authors:
J. R. Gell,
P. Atkinson,
S. P. Bremner,
F. Sfigakis,
M. Kataoka,
D. Anderson,
G. A. C. Jones,
C. H. W. Barnes,
D. A. Ritchie,
M. B. Ward,
C. E. Norman,
A. J. Shields
Abstract:
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This typ…
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The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
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Submitted 28 January, 2007;
originally announced January 2007.
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Electrically addressing a single self-assembled quantum dot
Authors:
D. J. P. Ellis,
A. J. Bennett,
P. Atkinson,
D. A. Ritchie,
A. J. Shields
Abstract:
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single d…
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We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot.
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Submitted 6 December, 2006;
originally announced December 2006.
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Single-photon-emitting diodes: a review
Authors:
A. J. Bennett,
P. Atkinson,
P. See,
M. B. Ward,
R. M. Stevenson,
Z. L. Yuan,
D. C. Unitt,
D. J. P. Ellis,
K. Cooper,
D. A. Ritchie,
A. J. Shields
Abstract:
Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots have been widely studied for this reason, but the vast majority of reported work has been limited to optically excited sources. Here we discuss the progress made…
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Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots have been widely studied for this reason, but the vast majority of reported work has been limited to optically excited sources. Here we discuss the progress made so far, and prospects for, electrically driven single-photon-emitting diodes (SPEDs).
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Submitted 31 October, 2006;
originally announced October 2006.
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Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
Authors:
R. M. Stevenson,
R. J. Young,
P. See,
D. G. Gevaux,
K. Cooper,
P. Atkinson,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, a…
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By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, and has enabled the splitting to be tuned to zero within the resolution of our experiments. Observed behaviour allows us to determine g-factors and exchange splittings for different types of dots.
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Submitted 30 January, 2006;
originally announced January 2006.
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Inversion of exciton level splitting in quantum dots
Authors:
R. J. Young,
R. M. Stevenson,
A. J. Shields,
P. Atkinson,
K. Cooper,
D. A. Ritchie,
K. M. Groom,
A. I. Tartakovskii,
M. S. Skolnick
Abstract:
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown t…
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The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Thermal annealing is shown to reduce the exciton confinement, thereby increasing the number of dots with splitting close to zero.
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Submitted 30 January, 2006;
originally announced January 2006.
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Improved fidelity of triggered entangled photons from single quantum dots
Authors:
Robert J. Young,
R. Mark Stevenson,
Paola Atkinson,
Ken Cooper,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fid…
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We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fidelity of the (|HxxHx>+|VxxVx>)/2^0.5 state that we determine is sufficient to satisfy numerous tests for entanglement. The improved quality of entanglement represents a significant step towards the realisation of a practical quantum dot source compatible with applications in quantum information.
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Submitted 26 February, 2006; v1 submitted 27 January, 2006;
originally announced January 2006.
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Local transport in a disorder-stabilized correlated insulating phase
Authors:
M. Baenninger,
A. Ghosh,
M. Pepper,
H. E. Beere,
I. Farrer,
P. Atkinson,
D. A. Ritchie
Abstract:
We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hop** transport mechanism. Transport in this regime is determined only by the average electron separation, i…
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We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hop** transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by mutual interplay of disorder and Coulomb interaction.
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Submitted 28 October, 2005;
originally announced October 2005.
