Showing 1–14 of 14 results for author: Arora, H

Room Temperature Spin Filtering and Quantum Transport with Transition Metal-Doped Silicon Quantum Dot

Authors: Hemant Arora, Arup Samanta

Abstract: Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is a suitable candidate for spin filter device at room temperature. Using density functional theory (DFT), we investigate the structure, electronic properties, an… ▽ More Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is a suitable candidate for spin filter device at room temperature. Using density functional theory (DFT), we investigate the structure, electronic properties, and magnetic behavior of TM-SiQD. Our calculations demonstrate that Mn-doped SiQD exhibits the highest stability. The designed spin-filter device using Mn-doped SiQD shows a spin-filtering efficiency of 99.9% at 300K electrode temperature along with very high conductance. This remarkable efficiency positions it as a promising candidate for room-temperature spintronic devices. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices

Authors: Pooja Yadav, Hemant Arora, Arup Samanta

Abstract: Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature although a few devices are developed for high-temperature operation with certain limitations. Here, we propose and theoretically exhibit that nitrogen (N) dono… ▽ More Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature although a few devices are developed for high-temperature operation with certain limitations. Here, we propose and theoretically exhibit that nitrogen (N) donor in silicon is an important candidate for effective designing of such devices. Theoretical calculation of density-of-states using semi-empirical DFT method indicates that N-donor in silicon has deep ground state compared to a phosphorus (P) donor. N-donor spectrum is explored in nano-silicon along with the P-donor. Comparative data of Bohr radius of N-donor and P-donor is also reported. The simulated current-voltage characteristics confirm that N-doped device is better suited for SET operation at room-temperature. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Hot Carrier Thermalization and Josephson Inductance Thermometry in a Graphene-based Microwave Circuit

Authors: Raj Katti, Harpreet Arora, Olli-Pentti Saira, Kenji Watanabe, Takashi Taniguchi, Keith C. Schwab, Michael Roukes, Stevan Nadj-Perge

Abstract: Due to its exceptional electronic and thermal properties, graphene is a key material for bolometry, calorimetry, and photon detection. However, despite graphene's relatively simple electronic structure, the physical processes responsible for the transport of heat from the electrons to the lattice are experimentally still elusive. Here, we measure the thermal response of low-disorder graphene encap… ▽ More Due to its exceptional electronic and thermal properties, graphene is a key material for bolometry, calorimetry, and photon detection. However, despite graphene's relatively simple electronic structure, the physical processes responsible for the transport of heat from the electrons to the lattice are experimentally still elusive. Here, we measure the thermal response of low-disorder graphene encapsulated in hexagonal boron nitride (hBN) by integrating it within a multi-terminal superconducting device coupled to a microwave resonator. This technique allows us to simultaneously apply Joule heat power to the graphene flake while performing calibrated readout of the electron temperature. We probe the thermalization rates of both electrons and holes with high precision and observe a thermalization scaling exponent consistent with cooling dominated by resonant electron-phonon coupling processes occurring at the interface between graphene and superconducting leads. The technique utilized here is applicable for wide range of semiconducting-superconducting interface heterostructures and provides new insights into the thermalization pathways essential for the next-generation thermal detectors. △ Less

Submitted 29 August, 2022; originally announced August 2022.

Comments: main text and supplementary information

Electrochemical investigation of MoSeTe as an anode for sodium-ion batteries

Authors: Priya Mudgal, Himani Arora, Jayashree Pati, Manish K. Singh, Mahantesh Khetri, Rajendra S. Dhaka

Abstract: Sodium ion batteries (SIBs) are considered as an efficient alternative for lithium-ion batteries (LIBs) owing to the natural abundance and low cost of sodium than lithium. In this context, the anode materials play a vital role in rechargeable batteries to acquire high energy and power density. In order to demonstrate transition metal dichalcogenide (TMD) as potential anode materials, we have synth… ▽ More Sodium ion batteries (SIBs) are considered as an efficient alternative for lithium-ion batteries (LIBs) owing to the natural abundance and low cost of sodium than lithium. In this context, the anode materials play a vital role in rechargeable batteries to acquire high energy and power density. In order to demonstrate transition metal dichalcogenide (TMD) as potential anode materials, we have synthesized MoSeTe sample by conventional flux method, and the structure and morphology are characterized using x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy. These characterisations confirm the hexagonal crystal symmetry with p63/mmc space group and layered morphology of MoSeTe. We investigate the electrochemical performance of a MoSeTe as a negative electrode (anode) for SIBs in the working potential range of 0.01 to 3.0~V. In a half-cell configuration, the MoSeTe as an anode and Na metal as counter/reference electrode exhibits significant initial specific discharge capacities of around 475 and 355 mAhg$^{-1}$ at current densities of 50 and 100 mAg$^{-1}$, respectively. However, the capacity degraded significantly like $\approx$200~mAhg$^{-1}$ in 2nd cycle, but having $\approx$100\% Coulombic efficiency, which suggest for further modification in this material to improve its stability. The cyclic voltammetry (CV) study reveals the reversibility of the material after 1st cycle, resulting no change in the initial peak positions. The electrochemical impedance spectroscopy (EIS) measurements affirms the smaller charge transfer resistance of fresh cells than the cells after 10th cycle. Moreover, the extracted diffusion coefficient is found to be of the order of 10$^{-14}$ cm$^2$s$^{-1}$. △ Less

Submitted 23 August, 2022; originally announced August 2022.

Comments: to be published in PINSA (Springer)

Hierarchy of Symmetry Breaking Correlated Phases in Twisted Bilayer Graphene

Authors: Robert Polski, Yiran Zhang, Yang Peng, Harpreet Singh Arora, Youngjoon Choi, Hyun** Kim, Kenji Watanabe, Takashi Taniguchi, Gil Refael, Felix von Oppen, Stevan Nadj-Perge

Abstract: Twisted bilayer graphene (TBG) near the magic twist angle of $\sim1.1^{o}$ exhibits a rich phase diagram. However, the interplay between different phases and their dependence on twist angle is still elusive. Here, we explore the stability of various TBG phases and demonstrate that superconductivity near filling of two electrons per moiré unit cell alongside Fermi surface reconstructions, as well a… ▽ More Twisted bilayer graphene (TBG) near the magic twist angle of $\sim1.1^{o}$ exhibits a rich phase diagram. However, the interplay between different phases and their dependence on twist angle is still elusive. Here, we explore the stability of various TBG phases and demonstrate that superconductivity near filling of two electrons per moiré unit cell alongside Fermi surface reconstructions, as well as entropy-driven high-temperature phase transitions and linear-in-T resistance occur over a range of twist angles which extends far beyond those exhibiting correlated insulating phases. In the vicinity of the magic angle, we also find a metallic phase that displays a hysteretic anomalous Hall effect and incipient Chern insulating behaviour. Such a metallic phase can be rationalized in terms of the interplay between interaction-driven deformations of TBG bands leading to Berry curvature redistribution and Fermi surface reconstruction. Our results provide an extensive perspective on the hierarchy of correlated phases in TBG as classified by their robustness against deviations from the magic angle or, equivalently, their electronic interaction requirements. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Comments: main text + supplementary information

Terahertz control of photoluminescence emission in few-layer InSe

Authors: Tommaso Venanzi, Malte Selig, Alexej Pashkin, Stephan Winnerl, Manuel Katzer, Himani Arora, Artur Erbe, Amalia Patanè, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Leonetta Baldassarre, Andreas Knorr, Manfred Helm, Harald Schneider

Abstract: A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recove… ▽ More A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Accelerated Corrosion of High Entropy Alloys under Tensile Stress

Authors: Aditya Ayyagari, Riyadh Salloom, Harpreet Singh Arora, Sundeep Mukherjee

Abstract: High entropy alloys are finding significant scientific interest due to their exotic microstructures and exceptional properties resulting thereof. These alloys have excellent corrosion resistance and may find broad range of applications from bio-implants, aerospace components and nuclear industry. A critical performance metric that determines the application worthiness of the alloys is the resilien… ▽ More High entropy alloys are finding significant scientific interest due to their exotic microstructures and exceptional properties resulting thereof. These alloys have excellent corrosion resistance and may find broad range of applications from bio-implants, aerospace components and nuclear industry. A critical performance metric that determines the application worthiness of the alloys is the resilience of stressed structural members in a corrosive environment. This study reports the results from a novel experimental setup to quantify the corrosion rate under uniaxial tensile stress in a single phase fcc Al0.1CoCrFeNi high entropy alloy rods. Under a uniform uniaxial applied stress of 600 MPa, the corrosion current density was observed to increase by three orders of magnitude and ~150 mV drop in corrosion potential. The mechanism of accelerated corrosion is identified as surface passivation layer breakdown, pit initiation on un-passivated surface and rapid pit-propagation along the loading direction. △ Less

Submitted 7 June, 2021; originally announced June 2021.

Tracing out Correlated Chern Insulators in Magic Angle Twisted Bilayer Graphene

Authors: Youngjoon Choi, Hyun** Kim, Yang Peng, Alex Thomson, Cyprian Lewandowski, Robert Polski, Yiran Zhang, Harpreet Singh Arora, Kenji Watanabe, Takashi Taniguchi, Jason Alicea, Stevan Nadj-Perge

Abstract: Magic-angle twisted bilayer graphene (MATBG) exhibits a range of correlated phenomena that originate from strong electron-electron interactions. These interactions make the Fermi surface highly susceptible to reconstruction when $ \pm 1, \pm 2, \pm 3$ electrons occupy each moir\' e unit cell and lead to the formation of correlated insulating, superconducting and ferromagnetic phases. While some ph… ▽ More Magic-angle twisted bilayer graphene (MATBG) exhibits a range of correlated phenomena that originate from strong electron-electron interactions. These interactions make the Fermi surface highly susceptible to reconstruction when $ \pm 1, \pm 2, \pm 3$ electrons occupy each moir\' e unit cell and lead to the formation of correlated insulating, superconducting and ferromagnetic phases. While some phases have been shown to carry a non-zero Chern number, the local microscopic properties and topological character of many other phases remain elusive. Here we introduce a set of novel techniques hinging on scanning tunneling microscopy (STM) to map out topological phases in MATBG that emerge in finite magnetic field. By following the evolution of the local density of states (LDOS) at the Fermi level with electrostatic do** and magnetic field, we visualize a local Landau fan diagram that enables us to directly assign Chern numbers to all observed phases. We uncover the existence of six topological phases emanating from integer fillings in finite fields and whose origin relates to a cascade of symmetry-breaking transitions driven by correlations. The spatially resolved and electron-density-tuned LDOS maps further reveal that these topological phases can form only in a small range of twist angles around the magic-angle value. Both the microscopic origin and extreme sensitivity to twist angle differentiate these topological phases from the Landau levels observed near charge neutrality. Moreover, we observe that even the charge-neutrality Landau spectrum taken at low fields is considerably modified by interactions and exhibits an unexpected splitting between zero Landau levels that can be as large as ${\sim }\,3-5$ meV. Our results show how strong electronic interactions affect the band structure of MATBG and lead to the formation of correlation-enabled topological phases. △ Less

Submitted 26 August, 2020; originally announced August 2020.

Autocorrected Off-axis Holography of 2D Materials

Authors: Felix Kern, Martin Linck, Daniel Wolf, Nasim Alem, Himani Arora, Sibylle Gemming, Artur Erbe, Alex Zettl, Bernd Büchner, Axel Lubk

Abstract: The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electro… ▽ More The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges. △ Less

Submitted 25 June, 2020; v1 submitted 24 June, 2020; originally announced June 2020.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. Research 2, 043360 (2020)

Photoluminescence dynamics in few-layer InSe

Authors: Tommaso Venanzi, Himani Arora, Stephan Winnerl, Alexej Pashkin, Phanish Chava, Amalia Patanè, Zakhar D. Kovalyuk, Zalhar R. Kudrynskyi, Kenji Watanabe, Takashi Taniguchi, Artur Erbe, Manfred Helm, Harald Schneider

Abstract: We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguish… ▽ More We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations. △ Less

Submitted 31 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: The manuscript will be published in the journal Physical Review Materials. Copyright 2011 by American Physical Society (https://journals.aps.org/prmaterials/)

Superconductivity without insulating states in twisted bilayer graphene stabilized by monolayer WSe$_2$

Authors: Harpreet Singh Arora, Robert Polski, Yiran Zhang, Alex Thomson, Youngjoon Choi, Hyun** Kim, Zhong Lin, Ilham Zaky Wilson, Xiaodong Xu, Jiun-Haw Chu, Kenji Watanabe, Takashi Taniguchi, Jason Alicea, Stevan Nadj-Perge

Abstract: Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological phases. The origins of the correlated insulators and superconductivity, and the interplay between them, are particularly elusive. Both states have been previous… ▽ More Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological phases. The origins of the correlated insulators and superconductivity, and the interplay between them, are particularly elusive. Both states have been previously observed only for angles within $\pm0.1^\circ$ from the magic-angle value and occur in adjacent or overlap** electron density ranges; nevertheless, it is still unclear how the two states are related. Beyond the twist angle and strain, the dependence of the TBG phase diagram on the alignment and thickness of insulating hexagonal boron nitride (hBN) used to encapsulate the graphene sheets indicates the importance of the microscopic dielectric environment. Here we show that adding an insulating tungsten-diselenide (WSe$_2$) monolayer between hBN and TBG stabilizes superconductivity at twist angles much smaller than the established magic-angle value. For the smallest angle of $θ$ = 0.79$^\circ$, we still observe clear superconducting signatures, despite the complete absence of the correlated insulating states and vanishing gaps between the dispersive and flat bands. These observations demonstrate that, even though electron correlations may be important, superconductivity in TBG can exist even when TBG exhibits metallic behaviour across the whole range of electron density. Finite-magnetic-field measurements further reveal breaking of the four-fold spin-valley symmetry in the system, consistent with large spin-orbit coupling induced in TBG via proximity to WSe$_2$. Our results highlight the importance of symmetry breaking effects in stabilizing electronic states in TBG and open new avenues for engineering quantum phases in moiré systems. △ Less

Submitted 7 February, 2020; originally announced February 2020.

Comments: 12 pages, 4 figures; main text;

Journal ref: Nature 583, 379 - 384 (2020)

Imaging Electronic Correlations in Twisted Bilayer Graphene near the Magic Angle

Authors: Youngjoon Choi, Jeannette Kemmer, Yang Peng, Alex Thomson, Harpreet Arora, Robert Polski, Yiran Zhang, Hechen Ren, Jason Alicea, Gil Refael, Felix von Oppen, Kenji Watanabe, Takashi Taniguchi, Stevan Nadj-Perge

Abstract: Twisted bilayer graphene with a twist angle of around 1.1° features a pair of isolated flat electronic bands and forms a strongly correlated electronic platform. Here, we use scanning tunneling microscopy to probe local properties of highly tunable twisted bilayer graphene devices and show that the flat bands strongly deform when aligned with the Fermi level. At half filling of the bands, we obser… ▽ More Twisted bilayer graphene with a twist angle of around 1.1° features a pair of isolated flat electronic bands and forms a strongly correlated electronic platform. Here, we use scanning tunneling microscopy to probe local properties of highly tunable twisted bilayer graphene devices and show that the flat bands strongly deform when aligned with the Fermi level. At half filling of the bands, we observe the development of gaps originating from correlated insulating states. Near charge neutrality, we find a previously unidentified correlated regime featuring a substantially enhanced flat band splitting that we describe within a microscopic model predicting a strong tendency towards nematic ordering. Our results provide insights into symmetry breaking correlation effects and highlight the importance of electronic interactions for all filling factors in twisted bilayer graphene. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Comments: Main text 9 pages, 4 figures; Supplementary Information 25 pages

Journal ref: Nature Physics 2019

Template-Assisted Direct Growth of 1Td/in$^2$ Bit Patterned Media

Authors: En Yang, Zuwei Liu, Hitesh Arora, Tsai-wei Wu, Vipin Ayanoor-Vitikkate, Detlef Spoddig, Daniel Bedau, Michael Grobis, Bruce A. Gurney, Thomas R. Albrecht, Bruce Terris

Abstract: We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive oper… ▽ More We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive operation. We illustrate the importance of using a process that is both topographically and chemically driven to achieve high quality media. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Journal ref: Nano Letters (2016)

Bit Patterned Magnetic Recording: Theory, Media Fabrication, and Recording Performance

Authors: Thomas R. Albrecht, Hitesh Arora, Vipin Ayanoor-Vitikkate, Jean-Marc Beaujour, Daniel Bedau, David Berman, Alexei L. Bogdanov, Yves-Andre Chapuis, Julia Cushen, Elizabeth E. Dobisz, Gregory Doerk, He Gao, Michael Grobis, Bruce Gurney, Weldon Hanson, Olav Hellwig, Toshiki Hirano, Pierre-Olivier Jubert, Dan Kercher, Jeffrey Lille, Zuwei Liu, C. Mathew Mate, Yuri Obukhov, Kanaiyalal C. Patel, Kurt Rubin , et al. (6 additional authors not shown)

Abstract: Bit Patterned Media (BPM) for magnetic recording provide a route to densities $>1 Tb/in^2$ and circumvents many of the challenges associated with conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM uses an array of lithographically defined isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challe… ▽ More Bit Patterned Media (BPM) for magnetic recording provide a route to densities $>1 Tb/in^2$ and circumvents many of the challenges associated with conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM uses an array of lithographically defined isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challenge for its commercialization. In this article we describe a BPM fabrication method which combines e-beam lithography, directed self-assembly of block copolymers, self-aligned double patterning, nanoimprint lithography, and ion milling to generate BPM based on CoCrPt alloys. This combination of fabrication technologies achieves feature sizes of $<10 nm$, significantly smaller than what conventional semiconductor nanofabrication methods can achieve. In contrast to earlier work which used hexagonal close-packed arrays of round islands, our latest approach creates BPM with rectangular bitcells, which are advantageous for integration with existing hard disk drive technology. The advantages of rectangular bits are analyzed from a theoretical and modeling point of view, and system integration requirements such as servo patterns, implementation of write synchronization, and providing for a stable head-disk interface are addressed in the context of experimental results. Optimization of magnetic alloy materials for thermal stability, writeability, and switching field distribution is discussed, and a new method for growing BPM islands on a patterned template is presented. New recording results at $1.6 Td/in^2$ (teradot/inch${}^2$, roughly equivalent to $1.3 Tb/in^2$) demonstrate a raw error rate $<10^{-2}$, which is consistent with the recording system requirements of modern hard drives. Extendibility of BPM to higher densities, and its eventual combination with energy assisted recording are explored. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Comments: 44 pages

ACM Class: B.3.2; B.4.2