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1/f noise of a tiny tunnel magnetoresistance sensor originated from a wide distribution of bath correlation time
Authors:
Hiroshi Imamura,
Hiroko Arai,
Rie Matsumoto,
Toshiki Yamaji
Abstract:
Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability of TMR sensors in low frequency regime it is necessary to suppress the 1/f noise. We theoretically study 1/f noise of a tiny TMR sensor using the macrospin mode…
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Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability of TMR sensors in low frequency regime it is necessary to suppress the 1/f noise. We theoretically study 1/f noise of a tiny TMR sensor using the macrospin model. Starting from the generalized Langevin equation, 1/f noise power spectrum and the Hooge parameter are derived. The calculated Hooge parameter of a tiny TMR sensor is much smaller than that of a conventional TMR sensor with large junction area. The results provide a new perspective on magnetic 1/f noise and will be useful for improvement of TMR sensors.
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Submitted 26 June, 2024;
originally announced June 2024.
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Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory
Authors:
Hiroko Arai,
Hiroshi Imamura
Abstract:
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory cell decreases, the data retention time decreases, which causes a transition from the write-error-dominant region to the retention-error-dominant region at a ce…
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Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory cell decreases, the data retention time decreases, which causes a transition from the write-error-dominant region to the retention-error-dominant region at a certain operating time. Here we introduce the characteristic time of the transition from the write-error-dominant region to the retention-error-dominant region and analyze how the characteristic time depends on the effective anisotropy constant, $K_{0}$. The characteristic time is approximately expressed as $t_{\rm c} = 2\, w\, τ$, where $w$ is the write error rate, and $τ$ is the relaxation time derived by Kalmkov [J. Appl. Phys. 96, (2004) 1138-1145]. We show that for large $K_{0}$, $t_{\rm c}$ increases with increase of $K_{0}$ similar to $τ$. The characteristic time is a key parameter for designing the VC MRAM for the variety of applications such as machine learning and artificial intelligence.
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Submitted 10 March, 2023;
originally announced March 2023.
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Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters
Authors:
Hiroshi Imamura,
Hiroko Arai,
Rie Matsumoto
Abstract:
Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy constant is theoretically studied. Assuming that WER is much smaller than unity, and junction parameters obey a normal distribution, we show that the WER obeys a logarithmic normal distribution. We derive analytical expres…
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Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy constant is theoretically studied. Assuming that WER is much smaller than unity, and junction parameters obey a normal distribution, we show that the WER obeys a logarithmic normal distribution. We derive analytical expressions for the probability density function and statistical measures. We find that the coefficient of variation of WER can be reduced by decreasing the pulse width. We also perform numerical simulations based on the Fokker-Planck equation and confirm the validity of the analytical expressions. The results are useful for designing reliable STT MRAMs.
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Submitted 31 October, 2022; v1 submitted 28 September, 2022;
originally announced September 2022.
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Precession dynamics of a small magnet with non-Markovian dam**: Theoretical proposal for an experiment to determine the correlation time
Authors:
Hiroshi Imamura,
Hiroko Arai,
Rie Matsumoto,
Toshiki Yamaji,
Hiroshi Tsukahara
Abstract:
Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the correlation time of the bath degrees of freedom. In the equations of motion of magnetization, the correlation of the bath is represented by the non-Markovian dam**. For development of the science and technologies based…
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Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the correlation time of the bath degrees of freedom. In the equations of motion of magnetization, the correlation of the bath is represented by the non-Markovian dam**. For development of the science and technologies based on the ultrafast magnetization dynamics it is important to understand how the magnetization dynamics depend on the correlation time. It is also important to determine the correlation time experimentally. Here we study the precession dynamics of a small magnet with the non-Markovian dam**. Extending the theoretical analysis of Miyazaki and Seki [J. Chem. Phys. 108, 7052 (1998)] we obtain analytical expressions of the precession angular velocity and the effective dam** constant for any values of the correlation time under assumption of small Gilbert dam** constant. We also propose a possible experiment for determination of the correlation time.
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Submitted 12 May, 2022;
originally announced May 2022.
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One-dimensional van der Waals heterostructures
Authors:
Rong Xiang,
Taiki Inoue,
Yongjia Zheng,
Akihito Kumamoto,
Yang Qian,
Yuta Sato,
Ming Liu,
Devashish Gokhale,
Jia Guo,
Kaoru Hisama,
Satoshi Yotsumoto,
Tatsuro Ogamoto,
Hayato Arai,
Yu Kobayashi,
Hao Zhang,
Bo Hou,
Anton Anisimov,
Yasumitsu Miyata,
Susumu Okada,
Shohei Chiashi,
Yan Li,
**g Kong,
Esko I. Kauppinen,
Yuichi Ikuhara,
Kazu Suenaga
, et al. (1 additional authors not shown)
Abstract:
Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophis…
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Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophisticated structures layer by layer. However, this concept has been so far limited in two dimensional (2D) materials. Here we show a class of new material where different layers are coaxially (instead of planarly) stacked. As the structure is in one dimensional (1D) form, we name it "1D vdW heterostructures". We demonstrate a 5 nm diameter nanotube consisting of three different materials: an inner conductive carbon nanotube (CNT), a middle insulating hexagonal boron nitride nanotube (BNNT) and an outside semiconducting MoS2 nanotube. As the technique is highly applicable to other materials in the current 2D libraries,4-6 we anticipate our strategy to be a starting point for discovering a class of new semiconducting nanotube materials. A plethora of function-designable 1D heterostructures will appear after the combination of CNTs, BNNTs and semiconducting nanotubes.
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Submitted 30 October, 2018; v1 submitted 16 July, 2018;
originally announced July 2018.
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Vortex Dynamics-Mediated Low-Field Magnetization Switching in an Exchange-Coupled System
Authors:
Weinan Zhou,
Takeshi Seki,
Hiroko Arai,
Hiroshi Imamura,
Koki Takanashi
Abstract:
A magnetic vortex has attracted significant attention since it is a topologically stable magnetic structure in a soft magnetic nanodisk. Many studies have been devoted to understanding the nature of magnetic vortex in isolated systems. Here we show a new aspect of a magnetic vortex the dynamics of which strongly affects the magnetic structures of environment. We exploit a nanodot of an exchange-co…
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A magnetic vortex has attracted significant attention since it is a topologically stable magnetic structure in a soft magnetic nanodisk. Many studies have been devoted to understanding the nature of magnetic vortex in isolated systems. Here we show a new aspect of a magnetic vortex the dynamics of which strongly affects the magnetic structures of environment. We exploit a nanodot of an exchange-coupled bilayer with a soft magnetic Ni81Fe19 (permalloy; Py) having a magnetic vortex and a perpendicularly magnetized L10-FePt exhibiting a large switching field (Hsw). The vortex dynamics with azimuthal spin waves makes the excess energy accumulate in the Py, which triggers the reversed-domain nucleation in the L10-FePt at a low magnetic field. Our results shed light on the non-local mechanism of a reversed-domain nucleation, and provide with a route for efficient Hsw reduction that is needed for ultralow-power spintronic devices.
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Submitted 21 January, 2016;
originally announced January 2016.
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Anomalous Quantum Transport Properties in Semimetallic Black Phosphorus
Authors:
Kazuto Akiba,
Astushi Miyake,
Yuichi Akahama,
Kazuyuki Matsubayashi,
Yoshiya Uwatoko,
Hayato Arai,
Yuki Fuseya,
Masashi Tokunaga
Abstract:
Magnetoresistance in single crystals of black phosphorus is studied at ambient and hydrostatic pressures. In the semiconducting states at pressures below 0.71 GPa, the magnetoresistance shows periodic oscillations, which can be ascribed to the magneto-phonon resonance that is characteristic of high mobility semiconductors. In the metallic state above 1.64 GPa, the both transverse and longitudinal…
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Magnetoresistance in single crystals of black phosphorus is studied at ambient and hydrostatic pressures. In the semiconducting states at pressures below 0.71 GPa, the magnetoresistance shows periodic oscillations, which can be ascribed to the magneto-phonon resonance that is characteristic of high mobility semiconductors. In the metallic state above 1.64 GPa, the both transverse and longitudinal magnetoresistance show titanic increase with exhibiting superposed Shubnikov-de Haas oscillations. The observed small Fermi surfaces, high mobilities and light effective masses of carriers in semimetallic black phosphorus are comparable to those in the representative elemental semimetals of bismuth and graphite.
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Submitted 26 May, 2015;
originally announced May 2015.
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Theoretical study on the correlation between the spin fluctuation and $T_c$ in the isovalent-doped 1111 iron-based superconductors
Authors:
Hayato Arai,
Hidetomo Usui,
Katsuhiro Suzuki,
Yuki Fuseya,
Kazuhiko Kuroki
Abstract:
Motivated by recent experiments on isovalent-doped 1111 iron-based superconductors LaFeAs$_{1-{x}}$P$_{x}$O$_{1-{y}}$F$_{y}$ and the theoretical study that followed, we investigate, within the five orbital model, the correlation between the spin fluctuation and the superconducting transition temperature, which exhibits a double dome feature upon varying the Fe-As-Fe bond angle. Around the first do…
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Motivated by recent experiments on isovalent-doped 1111 iron-based superconductors LaFeAs$_{1-{x}}$P$_{x}$O$_{1-{y}}$F$_{y}$ and the theoretical study that followed, we investigate, within the five orbital model, the correlation between the spin fluctuation and the superconducting transition temperature, which exhibits a double dome feature upon varying the Fe-As-Fe bond angle. Around the first dome with higher $T_c$, the low energy spin fluctuation and $T_c$ are not tightly correlated because the finite energy spin fluctuation also contributes to superconductivity. On the other hand, the strength of the low-energy spin fluctuation originating from the $d_{xz/yz}$ orbital is correlated with $T_c$ in the second dome with lower $T_c$. These calculation results are consistent with recent NMR study, and hence strongly suggest that the pairing in the iron-based superconductors is predominantly caused by the multi-orbital spin fluctuation.
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Submitted 18 February, 2015;
originally announced February 2015.
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Role of Magnetic Field in Self-Oscillation of Nanomagnet Excited by Spin Torque
Authors:
Tomohiro Taniguchi,
Shingo Tamaru,
Hiroko Arai,
Sumito Tsunegi,
Hitoshi Kubota,
Hiroshi Imamura
Abstract:
The critical current of the self-oscillation of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert (LLG) equation. We found that the critical current diverged at certain field directions, indicating that the self-oscillation does not occur at these directions. It was also foun…
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The critical current of the self-oscillation of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert (LLG) equation. We found that the critical current diverged at certain field directions, indicating that the self-oscillation does not occur at these directions. It was also found that the sign of the critical current changed depending on the applied field direction.
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Submitted 3 December, 2014;
originally announced December 2014.
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Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer
Authors:
Tomohiro Taniguchi,
Hiroko Arai,
Sumito Tsunegi,
Shingo Tamaru,
Hitoshi Kubota,
Hiroshi Imamura
Abstract:
The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and dam**. The critical value of an external magnetic field applied normal to the film plane is found, below which the controllable range of the oscillation frequency by the…
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The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and dam**. The critical value of an external magnetic field applied normal to the film plane is found, below which the controllable range of the oscillation frequency by the current is suppressed. The value of the critical field depends on the magnetic anisotropy, the saturation magnetization, and the spin torque parameter.
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Submitted 1 December, 2013;
originally announced December 2013.
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Theoretical Study of Spin-Torque Oscillator with Perpendicularly Magnetized Free Layer
Authors:
Tomohiro Taniguchi,
Hiroko Arai,
Hitoshi Kubota,
Hiroshi Imamura
Abstract:
The magnetization dynamics of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert equation. We derived the analytical formula of the relation between the current and the oscillation frequency of the STO by analyzing the energy balance between the work done by the spin torque an…
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The magnetization dynamics of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert equation. We derived the analytical formula of the relation between the current and the oscillation frequency of the STO by analyzing the energy balance between the work done by the spin torque and the energy dissipation due to the dam**. We also found that the field-like torque breaks the energy balance, and change the oscillation frequency.
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Submitted 28 July, 2013;
originally announced July 2013.
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Theoretical study of spin-torque oscillator coupled with a nano-magnet by dipole-dipole interaction
Authors:
H. Arai,
T. Taniguchi,
H. Imamura
Abstract:
The dynamics of a spin-torque-oscillator (STO) coupled with a nano-magnet through dipole-dipole interaction was studied numerically by using the macrospin model for the application of the STO as a read head sensor of hard disk drives. We found that the current, which is required to induce the oscillation of the free-layer (FL) of the STO, depends strongly on the distance between the FL and the nan…
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The dynamics of a spin-torque-oscillator (STO) coupled with a nano-magnet through dipole-dipole interaction was studied numerically by using the macrospin model for the application of the STO as a read head sensor of hard disk drives. We found that the current, which is required to induce the oscillation of the free-layer (FL) of the STO, depends strongly on the distance between the FL and the nano-magnet as well as on the relative orientation of the magnetizations between them. To determine the dynamics of the STO it is indispensable to consider the dynamics of the dipole-coupled nano-magnet. We showed that we could detect the orientation of the magnetization of a nano-magnet, or a recording-bit, by the modulation of the oscillation frequency of the STO.
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Submitted 28 January, 2013;
originally announced January 2013.
