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Visualisation of quantised vortex reconnection as enabled by laser ablation
Authors:
Yosuke Minowa,
Shota Aoyagi,
Sosuke Inui,
Tomo Nakagawa,
Gamu Asaka,
Makoto Tsubota,
Masaaki Ashida
Abstract:
Impurity injection into superfluid helium is a simple yet unique method with diverse applications, including high-precision spectroscopy, quantum computing, nano/micro materialsynthesis, and flow visualisation. Quantised vortices are believed to play a major role in the interaction between superfluid helium and light impurities. However, the basic principle governing the interaction is still contr…
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Impurity injection into superfluid helium is a simple yet unique method with diverse applications, including high-precision spectroscopy, quantum computing, nano/micro materialsynthesis, and flow visualisation. Quantised vortices are believed to play a major role in the interaction between superfluid helium and light impurities. However, the basic principle governing the interaction is still controversial for dense materials such as semiconductor and metal impurities. Herein, we provide experimental evidence of the attraction of the dense silicon nanoparticles to the quantised vortex cores. We prepared the silicon nanoparticles via in-situ laser ablation. Following laser ablation, we observed that the silicon nanoparticles formed curved-filament-like structures, indicative of quantised vortex cores. We also observed that two accidentally intersecting quantised vortices exchanged their parts, a phenomenon called quantised vortex reconnection. This behaviour closely matches the dynamical scaling of reconnections. Our results provide a new method for visualising and studying impurity-quantised vortex interactions.
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Submitted 10 July, 2021;
originally announced July 2021.
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Crystalline C60 fulleride with metal inside
Authors:
Ayano Nakagawa,
Makiko Nishino,
Hiroyuki Niwa,
Katsuma Ishino,
Zhiyong Wang,
Haruka Omachi,
Ko Furukawa,
Takahisa Yamaguchi,
Tatsuhisa Kato,
Shunji Bandow,
Jeremy Rio,
Chris Ewels,
Shinobu Aoyagi,
Hisanori Shinohara
Abstract:
Endohedral metallofullerenes have been extensively studied, since the first experimental observation of La@C60 in a laser-vaporized supersonic beam in 1985. However, all of these studies have been carried out on metallofullerenes larger than C60 such as (metal)@C82, and there are no reported purified C60-based metallofullerenes except for [Li@C60]+(SbCl6)- salt. Pure (metal)@C60 has not been obtai…
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Endohedral metallofullerenes have been extensively studied, since the first experimental observation of La@C60 in a laser-vaporized supersonic beam in 1985. However, all of these studies have been carried out on metallofullerenes larger than C60 such as (metal)@C82, and there are no reported purified C60-based metallofullerenes except for [Li@C60]+(SbCl6)- salt. Pure (metal)@C60 has not been obtained because of their extremely high chemical reactivity. We report here the first isolation, structural determination and electromagnetic properties of crystalline C60-based metallofullerenes, Gd@C60(CF3)5 and La@C60(CF3)5. Synchrotron X-ray single-crystal diffraction reveals that La and Gd atoms are indeed encapsulated in the Ih-C60 fullerene. The HOMO-LUMO gaps of Gd@C60 and La@C60 are significantly widened by an order of magnitude with addition of CF3- groups. Magnetic measurements show the presense of a weak antiferromagnetic coupling in Gd@C60(CF3)3 crystals at low temperatures. Gd@C60 and La@C60 might exhibit superconductivity as the electronic structures resemble those of superconducting alkali-doped C60 fullerides.
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Submitted 30 January, 2018;
originally announced January 2018.
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Structural, transport, and thermal properties of single crystalline type-VIII clathrate Ba8Ga16Sn30
Authors:
D. Huo,
T. Sakata,
T. Sasakawa,
M. A. Avila,
M. Tsubota,
F. Iga,
H. Fukuoka,
S. Yamanaka,
S. Aoyagi,
T. Takabatake
Abstract:
We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolu…
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We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolute value of S increases monotonically to 243 uV/K with increasing temperature up to 550 K. The large S may originate from the low carrier concentration n=3.7x10^19 cm^(-3). Hall mobility u_H shows a maximum of 62 cm^2/Vs around 70 K. The analysis of temperature dependence of u_H suggests a crossover of dominant scattering mechanism from ionized impurity to acoustic phonon scattering with increasing temperature. The existence of local vibration modes of Ba atoms in cages composed of Ga and Sn atoms is evidenced by analysis of experimental data of structural refinement and specific heat, which give an Einstein temperature of 50 K and a Debye temperature of 200 K. This local vibration of Ba atoms should be responsible for the low thermal conductivity (1.1 W/m K at 150 K). The potential of type-VIII clathrate compounds for thermoelectric application is discussed.
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Submitted 21 September, 2004;
originally announced September 2004.
