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Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers
Authors:
Tatyana V. Ivanova,
Daniel Andres-Penares,
Yi** Wang,
Jiaqiang Yan,
Daniel Forbes,
Servet Ozdemir,
Kenneth S. Burch,
Brian D. Gerardot,
Mauro Brotons-Gisbert
Abstract:
α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thic…
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α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl$_3$ nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl$_3$ nanoflakes with thicknesses below 100 nm on SiO$_2$/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl$_3$ nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of -0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl$_3$ thickness.
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Submitted 9 May, 2024;
originally announced May 2024.
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Highly Tunable Ground and Excited State Excitonic Dipoles in Multilayer 2H-MoSe$_2$
Authors:
Shun Feng,
Aidan Campbell,
Mauro Brotons-Gisbert,
Daniel Andres-Penares,
Hyeonjun Baek,
Takashi Taniguchi,
Kenji Watanabe,
Bernhard Urbaszek,
Iann C. Gerber,
Brian D. Gerardot
Abstract:
The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-p…
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The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe$_2$ crystals exhibit electric-field-driven coupling with the ground ($1s$) and excited states ($2s$) of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to $0.73 \pm 0.01$ enm), high energy tunability (up to $\sim$ 200 meV), and full control of the spin and valley characteristics such that the exciton g-factor can be manipulated over a large range (from -4 to +14). Further, we observe the bi- and tri-layer excited state ($2s$) interlayer excitons and their coupling with the intralayer excitons states ($1s$ and $2s$). Our results, in good agreement with a coupled oscillator model with spin (layer)-selectivity and beyond standard density functional theory calculations, promote multilayer 2H-MoSe$_2$ as a highly tunable platform to explore exciton-exciton interactions with strong light-matter interactions.
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Submitted 19 January, 2023; v1 submitted 29 December, 2022;
originally announced December 2022.
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Van der Waals Materials for Applications in Nanophotonics
Authors:
Panaiot G. Zotev,
Yue Wang,
Daniel Andres-Penares,
Toby Severs Millard,
Sam Randerson,
Xuerong Hu,
Luca Sortino,
Charalambos Louca,
Mauro Brotons-Gisbert,
Tahiyat Huq,
Stefano Vezzoli,
Riccardo Sapienza,
Thomas F. Krauss,
Brian Gerardot,
Alexander I. Tartakovskii
Abstract:
Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v…
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Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.
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Submitted 31 October, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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Optical and dielectric properties of MoO$_3$ nanosheets for van der Waals heterostructures
Authors:
Daniel Andres-Penares,
Mauro Brotons-Gisbert,
Cristian Bonato,
Juan F. Sánchez-Royo,
Brian D. Gerardot
Abstract:
Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nit…
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Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nitride (hBN) is the dominant choice due to its large bandgap, atomic flatness, low defect density, and encapsulation properties. However, the broad catalogue of 2D insulators offers exciting opportunities to replace hBN in certain applications that require transparent thin layers with additional optical degrees of freedom. Here we investigate the potential of single-crystalline Molybdenum Oxide (MoO$_3$) as an alternative 2D insulator for the design of nanodevices that require precise adjustment of the light polarization at the nanometer scale. First, we measure the wavelength-dependent refractive indices of MoO$_3$ along its three main crystal axes and determine the in-plane and out-of-plane anisotropy of its optical properties. We find the birefringence in MoO$_3$ nanosheets compares favorably with other 2D materials that exhibit strong birefringence, such as black phosphorus, ReS$_2$, or ReSe$_2$, in particular in the visible spectral range where MoO$_3$ has the unique advantage of transparency. Finally, we demonstrate the suitability of MoO$_3$ for dielectric encapsulation by reporting linewidth narrowing and reduced inhomogeneous broadening of 2D excitons and optically active quantum emitters, respectively, in a prototypical monolayer transition-metal dichalcogenide semiconductor. These results show the potential of MoO$_3$ as a 2D dielectric layer for manipulation of the light polarization in vertical 2D heterostructures.
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Submitted 8 November, 2021;
originally announced November 2021.
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Out-of-plane emission of trions in monolayer WSe2 revealed by whispering gallery modes of dielectric microresonators
Authors:
D. Andres-Penares,
M. K. Habil,
A. Molina-Sánchez,
C. J. Zapata-Rodríguez,
J. P. Martínez-Pastor,
J. F. Sánchez-Royo
Abstract:
The manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require from the so elusive out-of-plane photon sources to achieve an efficient coupling of radiated light into planar devices. Here we propose a versatile spectroscopic method that enables the identification of the out-of-plane co…
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The manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require from the so elusive out-of-plane photon sources to achieve an efficient coupling of radiated light into planar devices. Here we propose a versatile spectroscopic method that enables the identification of the out-of-plane component of dipoles. The method is based on the selective coupling of light emitted by in-plane and out-of-plane dipoles to the whispering gallery modes of spherical dielectric microresonators, in close contact to them. We have applied this method to demonstrate the existence of dipoles with an out-of-plane orientation in monolayer WSe2 at room temperature. Micro-photoluminescent measurements, numerical simulations based on finite element methods, and ab-initio calculations have identified trions as the source responsible for this out-of-plane emission, opening new routes for realizing on-chip integrated systems with applications in information processing and quantum communications.
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Submitted 2 March, 2021;
originally announced March 2021.
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Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes
Authors:
Mauro Brotons-Gisbert,
Raphaël Proux,
Raphaël Picard,
Daniel Andres-Penares,
Artur Branny,
Alejandro Molina-Sánchez,
Juan F. Sánchez-Royo,
Brian D. Gerardot
Abstract:
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and…
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Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe$_2$ and MoSe$_2$. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe$_2$ and MoSe$_2$ at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
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Submitted 26 September, 2019; v1 submitted 20 January, 2019;
originally announced January 2019.
