-
Gate-tuning of graphene plasmons revealed by infrared nano-imaging
Authors:
Z. Fei,
A. S. Rodin,
G. O. Andreev,
W. Bao,
A. S. McLeod,
M. Wagner,
L. M. Zhang,
Z. Zhao,
G. Dominguez,
M. Thiemens,
M. M. Fogler,
A. H. Castro-Neto,
C. N. Lau,
F. Keilmann,
D. N. Basov
Abstract:
Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning o…
▽ More
Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures.
△ Less
Submitted 31 May, 2012; v1 submitted 22 February, 2012;
originally announced February 2012.
-
Infrared nanoscopy of Dirac plasmons at the graphene-SiO2 interface
Authors:
Zhe Fei,
Gregory O. Andreev,
Wenzhong Bao,
Lingfeng M. Zhang,
Alexander S. McLeod,
Chen Wang,
Magaret K. Stewart,
Zeng Zhao,
Gerardo Dominguez,
Mark Thiemens,
Michael M. Fogler,
Michael J. Tauber,
Antonio H. Castro-Neto,
Chun Ning Lau,
Fritz Keilmann,
Dimitri N. Basov
Abstract:
We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an approach yielding two orders of magnitude increase in the value of in-plane component of incident wavevector q compared to free space propagation. At these high wavevectors, the Dirac plasmon is found to dramatically enhance…
▽ More
We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an approach yielding two orders of magnitude increase in the value of in-plane component of incident wavevector q compared to free space propagation. At these high wavevectors, the Dirac plasmon is found to dramatically enhance the near-field interaction with mid-IR surface phonons of SiO2 substrate. Our data augmented by detailed modeling establish graphene as a new medium supporting plasmonic effects that can be controlled by gate voltage.
△ Less
Submitted 2 December, 2011;
originally announced December 2011.
-
Near-field spectroscopy of silicon dioxide thin films
Authors:
Lingfeng M. Zhang,
Gregory O. Andreev,
Zhe Fei,
Alexander S. McLeod,
Gerardo Dominguez,
Mark Thiemens,
Dimitri N. Basov,
Antonio H. Castro Neto,
Michael M. Fogler
Abstract:
We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the range from 2 to 300 {nm}. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a poi…
▽ More
We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the range from 2 to 300 {nm}. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.
△ Less
Submitted 21 October, 2011;
originally announced October 2011.
-
Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
Authors:
M. M. Qazilbash,
M. Brehm,
G. O. Andreev,
A. Frenzel,
P. -C. Ho,
Byung-Gyu Chae,
Bong-Jun Kim,
Sun ** Yun,
Hyun-Tak Kim,
A. V. Balatsky,
O. G. Shpyrko,
M. B. Maple,
F. Keilmann,
D. N. Basov
Abstract:
We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the I…
▽ More
We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the IMT. We present extensive near-field infrared images of phase coexistence in the IMT regime in VO2. We find that the coexisting insulating and metallic regions at a fixed temperature are static on the time scale of our measurements. A novel approach for analyzing the far-field and near-field infrared data within the Bruggeman effective medium theory was employed to extract the optical constants of the incipient metallic puddles at the onset of the IMT. We found divergent effective carrier mass in the metallic puddles that demonstrates the importance of electronic correlations to the IMT in VO2. We employ the extended dipole model for a quantitative analysis of the observed near-field infrared amplitude contrast and compare the results with those obtained with the basic dipole model.
△ Less
Submitted 2 April, 2009;
originally announced April 2009.
-
Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
Authors:
M. M. Qazilbash,
M. Brehm,
Byung-Gyu Chae,
P. -C. Ho,
G. O. Andreev,
Bong-Jun Kim,
Sun ** Yun,
A. V. Balatsky,
M. B. Maple,
F. Keilmann,
Hyun-Tak Kim,
D. N. Basov
Abstract:
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do** or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator…
▽ More
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do** or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.
△ Less
Submitted 8 January, 2008;
originally announced January 2008.
-
Excitons in Electrostatic Traps
Authors:
A. T. Hammack,
N. A. Gippius,
G. O. Andreev,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine…
▽ More
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trap** of indirect excitons in electrostatic traps.
△ Less
Submitted 1 April, 2005;
originally announced April 2005.
