Showing 1–39 of 39 results for author: Anderson, E

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Xiao-Wei Zhang, Xiaoyu Liu, William Holtzmann, Weijie Li, Chong Wang, Chaowei Hu, Yuzhou Zhao, Takashi Taniguchi, Kenji Watanabe, Jihui Yang, David Cobden, Jiun-Haw Chu, Nicolas Regnault, B. Andrei Bernevig, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abe… ▽ More The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abelian anyons, one route is to engineer higher flat Chern bands that mimic higher LLs. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayer (tMoTe2). Around filling factor v = -3, i.e., half-filling of the second miniband, we uncover spontaneous ferromagnetism and an incipient Chern insulator state. By measuring the anomalous Hall effect as a function of twist angle, we find that the Chern numbers (C) of the top two moiré flat bands have opposite sign (C = -+1) at twist angles above 3.1° but the same sign (C = -1) around 2.6°. This observation is consistent with the recently predicted twist-angle dependent band topology, resulting from the competition between moiré ferroelectricity and piezoelectricity. As we increase the magnetic field, only the small twist-angle device (2.6°) experiences a topological phase transition with an emergent C = -2 state. This is attributed to a Zeeman field-induced band crossing between opposite valleys, with the determined C = -1 for the top two bands. Our results lay a firm foundation for understanding the higher flat Chern bands, which is essential for the prediction or discovery of non-Abelian FCIs. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

Authors: Ellis Thompson, Keng Tou Chu, Florie Mesple, Xiao-Wei Zhang, Chaowei Hu, Yuzhou Zhao, Heonjoon Park, Jiaqi Cai, Eric Anderson, Kenji Watanabe, Takashi Taniguchi, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav… ▽ More In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures, Extended Data, 9 figures, Supplementary Information, 8 pages, 5 figures

Direct magnetic imaging of fractional Chern insulators in twisted MoTe$_2$ with a superconducting sensor

Authors: Evgeny Redekop, Canxun Zhang, Heonjoon Park, Jiaqi Cai, Eric Anderson, Owen Sheekey, Trevor Arp, Grigory Babikyan, Samuel Salters, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Andrea F. Young

Abstract: In the absence of time reversal symmetry, orbital magnetization provides a sensitive probe of topology and interactions, with particularly rich phenomenology in Chern insulators where topological edge states carry large equilibrium currents. Here, we use a nanoscale superconducting sensor to map the magnetic fringe fields in twisted bilayers of MoTe$_2$, where transport and optical sensing experim… ▽ More In the absence of time reversal symmetry, orbital magnetization provides a sensitive probe of topology and interactions, with particularly rich phenomenology in Chern insulators where topological edge states carry large equilibrium currents. Here, we use a nanoscale superconducting sensor to map the magnetic fringe fields in twisted bilayers of MoTe$_2$, where transport and optical sensing experiments have revealed the formation of fractional Chern insulator (FCI) states at zero magnetic field. At a temperature of 1.6K, we observe oscillations in the local magnetic field associated with fillings $ν=-1,-2/3,-3/5,-4/7$ and $-5/9$ of the first moiré hole band, consistent with the formation of FCIs at these fillings. By quantitatively reconstructing the magnetization, we determine the local thermodynamic gaps of the most robust FCI state at $ν=-2/3$, finding $^{-2/3}Δ$ as large as 7 meV. Spatial map** of the charge density- and displacement field-tuned magnetic phase diagram further allows us to characterize sample disorder, which we find to be dominated by both inhomogeneity in the effective unit cell area as well as inhomogeneity in the band edge offset and bound dipole moment. Our results highlight both the challenges posed by structural disorder in the study of twisted homobilayer moiré systems and the opportunities afforded by the remarkably robust nature of the underlying correlated topological states. △ Less

Submitted 16 May, 2024; originally announced May 2024.

Magneto-Thermoelectric Transport in Graphene Quantum Dot with Strong Correlations

Authors: Laurel E. Anderson, Antti Laitinen, Andrew Zimmerman, Thomas Werkmeister, Henry Shackleton, Alexander Kruchkov, Takashi Taniguchi, Kenji Watanabe, Subir Sachdev, Philip Kim

Abstract: Disorder at the etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially-filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We use quantum Hall edge states in the graphene electrodes to measure electrical conductance and thermoelectric power across the GQD. We observe a rapid diminishin… ▽ More Disorder at the etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially-filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We use quantum Hall edge states in the graphene electrodes to measure electrical conductance and thermoelectric power across the GQD. We observe a rapid diminishing of electric conductance fluctuations and slowly decreasing thermoelectric power across the GQD with increasing temperature, consistent with recent theoretical predictions for the SYK regime. △ Less

Submitted 15 January, 2024; originally announced January 2024.

Comments: 6 pages, 4 main figures; supplement has 24 pages, 10 figures

Journal ref: Physical Review Letters 132, 246502 (2024)

Conductance and thermopower fluctuations in interacting quantum dots

Authors: Henry Shackleton, Laurel E. Anderson, Philip Kim, Subir Sachdev

Abstract: We model an interacting quantum dot of electrons by a Hamiltonian with random and all-to-all single particle hop** (of r.m.s. strength $t$) and two-particle interactions (of r.m.s. strength $J$). For $t \ll J$, such a model has a regime exhibiting the non-quasiparticle physics of the Sachdev-Ye-Kitaev model at temperatures $E_{\rm coh} \ll T \ll J$, and that of a renormalized Fermi liquid at… ▽ More We model an interacting quantum dot of electrons by a Hamiltonian with random and all-to-all single particle hop** (of r.m.s. strength $t$) and two-particle interactions (of r.m.s. strength $J$). For $t \ll J$, such a model has a regime exhibiting the non-quasiparticle physics of the Sachdev-Ye-Kitaev model at temperatures $E_{\rm coh} \ll T \ll J$, and that of a renormalized Fermi liquid at $T \ll E_{\rm coh}$, where $E_{\rm coh} = t^2 / J$. Extending earlier work has computed the mean thermoelectric properties of such a dot weakly coupled to two external leads, we compute the sample-to-sample fluctuations in the conductance and thermopower of such a dot, and describe several distinct regimes. In all cases, the effect of the SYK interactions is to reduce the strength of the sample-to-sample fluctuations. We also find that in the regime where the mean transport co-efficients are determined only by the value of $J$ at leading order, the sample-to-sample fluctuations can be controlled by the influence of the smaller $t$. △ Less

Submitted 11 September, 2023; originally announced September 2023.

Comments: 39 pages, 11 figures

Journal ref: Physical Review B 109, 235109 (2024)

Observation of Fractionally Quantized Anomalous Hall Effect

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Yinong Zhang, Jiayi Zhu, Xiaoyu Liu, Chong Wang, William Holtzmann, Chaowei Hu, Zhaoyu Liu, Takashi Taniguchi, Kenji Watanabe, Jiun-haw Chu, Ting Cao, Liang Fu, Wang Yao, Cui-Zu Chang, David Cobden, Di Xiao, Xiaodong Xu

Abstract: The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anoma… ▽ More The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 15 pages, 4 figures for main text. 8 extended data figures

Journal ref: Nature (2023)

Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer

Authors: Jiaqi Cai, Eric Anderson, Chong Wang, Xiaowei Zhang, Xiaoyu Liu, William Holtzmann, Yinong Zhang, Fengren Fan, Takashi Taniguchi, Kenji Watanabe, Ying Ran, Ting Cao, Liang Fu, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic fiel… ▽ More The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic field can emerge. These states could host fractional excitations, including non-Abelian anyons - crucial building blocks for topological quantum computation. Flat Chern bands are widely considered as a desirable venue to realize the FQAH state. For this purpose, twisted transition metal dichalcogenide homobilayers in rhombohedral stacking have recently been predicted to be a promising material platform. Here, we report experimental signatures of FQAH states in 3.7-degree twisted MoTe2 bilayer. Magnetic circular dichroism measurements reveal robust ferromagnetic states at fractionally hole filled moiré minibands. Using trion photoluminescence as a sensor, we obtain a Landau fan diagram which shows linear shifts in carrier densities corresponding to the v=-2/3 and -3/5 ferromagnetic states with applied magnetic field. These shifts match the Streda formula dispersion of FQAH states with fractionally quantized Hall conductance of -2/3$e^2/h$ and -3/5$e^2/h$, respectively. Moreover, the v=-1 state exhibits a dispersion corresponding to Chern number -1, consistent with the predicted QAH state. In comparison, several non-ferromagnetic states on the electron do** side do not disperse, i.e., are trivial correlated insulators. The observed topological states can be further electrically driven into topologically trivial states. Our findings provide clear evidence of the long-sought FQAH states, putting forward MoTe2 moiré superlattices as a fascinating platform for exploring fractional excitations. △ Less

Submitted 18 April, 2023; v1 submitted 17 April, 2023; originally announced April 2023.

Comments: 15 pages, 4 figures, v2: extended data (6 figures) is added. Comments are welcome

Journal ref: Nature (2023)

Programming Correlated Magnetic States via Gate Controlled Moiré Geometry

Authors: Eric Anderson, Feng-Ren Fan, Jiaqi Cai, William Holtzmann, Takashi Taniguchi, Kenji Watanabe, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamilto… ▽ More Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in R-stacked MoTe2 moiré bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observe a correlated ferromagnetic insulator near one hole per moiré unit cell (ν=-1), i.e., a quarter-filled honeycomb lattice, with a widely tunable Curie temperature up to 14K. Fully polarizing layer pseudospin via electric field switches the system into a half-filled triangular lattice with antiferromagnetic interactions. Further do** this layer-polarized superlattice introduces carriers into the empty layer, tuning the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe2 moirés to be a new laboratory for engineering correlated states with nontrivial topology. △ Less

Submitted 29 March, 2023; originally announced March 2023.

Comments: 13 pages, 4 figures, plus supplementary material

Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon

Authors: Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson, Ting S. Luk, Jeffrey A. Ivie, Scott W. Schmucker, Xujiao Gao, Shashank Misra

Abstract: The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers pro… ▽ More The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the $δ$-layer as discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge density confinement and resulting quantum mechanical description of a P:$δ$-layer. We show that the absence of a plasma resonance feature results from a combination of two factors: i), the sharply varying charge density profile due to strong confinement in the direction of growth; and ii), the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the $δ$-layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its novel electronic properties. △ Less

Submitted 7 March, 2023; v1 submitted 19 October, 2022; originally announced October 2022.

Report number: SAND2023-12740O

Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures

Authors: Connor Halsey, Jessica Depoy, DeAnna M. Campbell, Daniel R. Ward, Evan M. Anderson, Scott W. Schmucker, Jeffrey A. Ivie, Xujiao Gao, David A. Scrymgeour, Shashank Misra

Abstract: As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of s… ▽ More As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of such doped layers, showing that these materials survive high current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still electrically conductive. The doped layers compare well to failures in traditional metal layers like aluminum and copper where mean time to failure at these temperatures and current densities would occur within hours. It also establishes that these materials are more stable than metal features, paving the way toward their integration with operational CMOS. △ Less

Submitted 24 February, 2022; v1 submitted 22 October, 2021; originally announced October 2021.

Comments: In IEEE Trans. Dev. Mater. Rel. (2022). Copyright 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, collecting new collected works for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching

Authors: Pradip Basnet, Erik Anderson, Bhaswar Chakrabarti, Matthew P. West, Fabia Farlin Athena, Eric M. Vogel

Abstract: Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the… ▽ More Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the switching performance, compared to the single oxide layer, the detailed explanation about why the switching can easily be improved for some oxides combinations is still missing. Herein, we fabricated two types of bi-layered heterostructure devices, quasi-HfO$_x$/AlO$_y$ and AlO$_y$/HfO$_x$ sandwiched between Au electrodes, and their electrical responses are investigated. For a deeper understanding of the switching mechanism, the performance of a HfOx only device is also considered, which serves as a control device. The role of bi-layered heterostructures is investigated using both the experimental and simulated results. Our results suggest that synergistic switching performance can be achieved with a proper combination of these materials and/or devices. These results open the avenue for designing more efficient double- or multi-layers memristor devices for an analog response. △ Less

Submitted 2 October, 2021; v1 submitted 4 August, 2021; originally announced August 2021.

Comments: 7 pages, 5 figures

Coulomb Drag between a Carbon Nanotube and Monolayer Graphene

Authors: Laurel E. Anderson, Austin Cheng, Takashi Taniguchi, Kenji Watanabe, Philip Kim

Abstract: We have measured Coulomb drag between an individual single-walled carbon nanotube (SWNT) as a one-dimensional (1D) conductor and the two-dimensional (2D) conductor monolayer graphene, separated by a few-atom-thick boron nitride layer. The graphene carrier density is tuned across the charge neutrality point (CNP) by a gate, while the SWNT remains degenerate. At high temperatures, the drag resistanc… ▽ More We have measured Coulomb drag between an individual single-walled carbon nanotube (SWNT) as a one-dimensional (1D) conductor and the two-dimensional (2D) conductor monolayer graphene, separated by a few-atom-thick boron nitride layer. The graphene carrier density is tuned across the charge neutrality point (CNP) by a gate, while the SWNT remains degenerate. At high temperatures, the drag resistance changes sign across the CNP, as expected for momentum transfer from drive to drag layer, and exhibits layer exchange Onsager reciprocity. We find that layer reciprocity is broken near the graphene CNP at low temperatures due to nonlinear drag response associated with temperature dependent drag and thermoelectric effects. The drag resistance shows power-law dependences on temperature and carrier density characteristic of 1D Fermi liquid-2D Dirac fluid drag. The 2D drag signal at high temperatures decays with distance from the 1D source slower than expected for a diffusive current distribution, suggesting additional interaction effects in the graphene in the hydrodynamic transport regime. △ Less

Submitted 14 December, 2021; v1 submitted 18 June, 2021; originally announced June 2021.

Comments: 27 pages, 20 figures (including supplemental material)

Journal ref: Phys. Rev. Lett. 127, 257701 (2021)

Spin Photovoltaic Effect in Magnetic van der Waals Heterostructures

Authors: Tiancheng Song, Eric Anderson, Matisse Wei-Yuan Tu, Kyle Seyler, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, Xiaosong Li, Ting Cao, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics with spontaneous time-reversal symmetry breaking. Here, we report spin photovol… ▽ More The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics with spontaneous time-reversal symmetry breaking. Here, we report spin photovoltaic effects in vdW heterostructures of atomically thin magnet chromium triiodide (CrI3) sandwiched by graphene contacts. In the absence of a magnetic field, the photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarization-resolved absorption measurements reveal that these observations originate from magnetic-order-coupled and thus helicity-dependent charge-transfer exciton states. The photocurrent displays multiple plateaus as the magnetic field is swept, which are associated with different spin configurations enabled by the layered antiferromagnetism and spin-flip transitions in CrI3. Remarkably, giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photo-spintronics by engineering magnetic vdW heterostructures. △ Less

Submitted 22 February, 2021; originally announced February 2021.

Electronic Thermal Transport Measurement in Low-Dimensional Materials with Graphene Nonlocal Noise Thermometry

Authors: Jonah Waissman, Laurel E. Anderson, Artem V. Talanov, Zhongying Yan, Young J. Shin, Danial H. Najafabadi, Mehdi Rezaee, Xiaowen Feng, Daniel G. Nocera, Takashi Taniguchi, Kenji Watanabe, Brian Skinner, Konstantin A. Matveev, Philip Kim

Abstract: In low-dimensional systems, the combination of reduced dimensionality, strong interactions, and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are do… ▽ More In low-dimensional systems, the combination of reduced dimensionality, strong interactions, and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. Here, we show how the measurement of nonlocal voltage fluctuations in a multiterminal device can reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. By using 2-dimensional graphene as a noise thermometer, we demonstrate quantitative electronic thermal conductance measurements of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observe signatures of long-range interaction-mediated energy transport in 1-dimensional electron systems, in agreement with a theoretical model. Our versatile nonlocal noise thermometry allows new experiments probing energy transport in emergent states of matter and devices in low dimensions. △ Less

Submitted 3 January, 2022; v1 submitted 5 January, 2021; originally announced January 2021.

Comments: Authors' revision. Main text: 11 pages, 4 figures. Supplementary information: 26 pages, 11 figures. Methods and references included. Published in Nature Nanotechnology

Magnetic domains and domain wall pinning in two-dimensional ferromagnets revealed by nanoscale imaging

Authors: Qi-Chao Sun, Tiancheng Song, Eric Anderson, Tetyana Shalomayeva, Johaness Förster, Andreas Brunner, Takashi Taniguchi, Kenji Watanabe, Joachim Gräfe, Rainer Stöhr, Xiaodong Xu, Jörg Wrachtrup

Abstract: Magnetic-domain structure and dynamics play an important role in understanding and controlling the magnetic properties of two-dimensional magnets, which are of interest to both fundamental studies and applications[1-5]. However, the probe methods based on the spin-dependent optical permeability[1,2,6] and electrical conductivity[7-10] can neither provide quantitative information of the magnetizati… ▽ More Magnetic-domain structure and dynamics play an important role in understanding and controlling the magnetic properties of two-dimensional magnets, which are of interest to both fundamental studies and applications[1-5]. However, the probe methods based on the spin-dependent optical permeability[1,2,6] and electrical conductivity[7-10] can neither provide quantitative information of the magnetization nor achieve nanoscale spatial resolution. These capabilities are essential to image and understand the rich properties of magnetic domains. Here, we employ cryogenic scanning magnetometry using a single-electron spin of a nitrogen-vacancy center in a diamond probe to unambiguously prove the existence of magnetic domains and study their dynamics in atomically thin CrBr$_3$. The high spatial resolution of this technique enables imaging of magnetic domains and allows to resolve domain walls pinned by defects. By controlling the magnetic domain evolution as a function of magnetic field, we find that the pinning effect is a dominant coercivity mechanism with a saturation magnetization of about 26~$μ_B$/nm$^2$ for bilayer CrBr$_3$. The magnetic-domain structure and pinning-effect dominated domain reversal process are verified by micromagnetic simulation. Our work highlights scanning nitrogen-vacancy center magnetometry as a quantitative probe to explore two-dimensional magnetism at the nanoscale. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Aharonov Bohm Effect in Graphene Fabry Pérot Quantum Hall Interferometers

Authors: Yuval Ronen, Thomas Werkmeister, Danial Najafabadi, Andrew T. Pierce, Laurel E. Anderson, Young J. Shin, Si Young Lee, Young Hee Lee, Bobae Johnson, Kenji Watanabe, Takashi Taniguchi, Amir Yacoby, Philip Kim

Abstract: Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) that guide electrons without dissipation. Using quantum point contacts (QPCs) as beamsplitters, these 1D channels can be split and recombine… ▽ More Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) that guide electrons without dissipation. Using quantum point contacts (QPCs) as beamsplitters, these 1D channels can be split and recombined, enabling interference of charged particles. Such quantum Hall interferometers (QHIs) can be used for studying exchange statistics of anyonic quasiparticles. In this study we develop a robust QHI fabrication technique in van der Waals (vdW) materials and realize a graphene-based Fabry-Pérot (FP) QHI. By careful heterostructure design, we are able to measure pure Aharonov-Bohm (AB) interference effect in the integer QHE, a major technical challenge in finite size FP interferometers. We find that integer edge modes exhibit high visibility interference due to relatively large velocities and long phase coherence lengths. Our QHI with tunable QPCs presents a versatile platform for interferometer studies in vdW materials and enables future experiments in the fractional QHE. △ Less

Submitted 27 August, 2020; originally announced August 2020.

Atomic Precision Advanced Manufacturing for Digital Electronics

Authors: Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson, Ezra Bussmann, Lisa Tracy, Tzu-Ming Lu, Leon N. Maurer, Andrew Baczewski, Deanna M. Campbell, Michael T. Marshall, Shashank Misra

Abstract: An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progre… ▽ More An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progressing to smaller feature sizes has created pain points throughout the ecosystem. The present challenge includes shrinking the smallest features from nanometers to atoms (10 nm corresponds to 30 silicon atoms). Relaxing the requirement for achieving scalable manufacturing creates the opportunity to evaluate ideas not one or two generations into the future, but at the absolute physical limit of atoms themselves. This article describes recent advances in atomic precision advanced manufacturing (APAM) that open the possibility of exploring opportunities in digital electronics. Doing so will require advancing the complexity of APAM devices and integrating APAM with CMOS. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Electronic Device Failure Analysis, 22 (2020) 1:4-10

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

Authors: Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer, Andrew D. Baczewski, Michael T. Marshall, Tzu-Ming Lu, ** Lu, Lisa A. Tracy, Scott W. Schmucker, Daniel R. Ward, Shashank Misra

Abstract: Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the invest… ▽ More Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices. △ Less

Submitted 11 June, 2020; v1 submitted 20 February, 2020; originally announced February 2020.

Comments: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

Nonlinear optical conductance from photon-assisted tunneling in a nanoantenna-coupled tunnel diode

Authors: Paul S Davids, Erik Anderson, Jared Kirsch, Joshua Shank

Abstract: Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial nonlinear media can have tailored resonances in the infrared around the longitudinal optical phonon modes of various compatible restrahlen oxides leading to enhan… ▽ More Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial nonlinear media can have tailored resonances in the infrared around the longitudinal optical phonon modes of various compatible restrahlen oxides leading to enhanced electric field confinement in a metal-oxide-semiconductor tunnel diode. This provides a new avenue for the examination and design of nonlinear phenomena extending the concept of nonlinear susceptibility to nonlinear conductance and the dynamic current in these devices. △ Less

Submitted 22 November, 2019; originally announced November 2019.

Comments: 10 pages, 5 figures

Imaging viscous flow of the Dirac fluid in graphene

Authors: Mark J. H. Ku, Tony X. Zhou, Qing Li, Young J. Shin, **g K. Shi, Claire Burch, Laurel E. Anderson, Andrew T. Pierce, Yonglong Xie, Assaf Hamo, Uri Vool, Huiliang Zhang, Francesco Casola, Takashi Taniguchi, Kenji Watanabe, Philip Kim, Amir Yacoby, Ronald L. Walsworth

Abstract: The electron-hole plasma in charge-neutral graphene is predicted to realize a quantum critical system whose transport features a universal hydrodynamic description, even at room temperature. This quantum critical "Dirac fluid" is expected to have a shear viscosity close to a minimum bound, with an inter-particle scattering rate saturating at the Planckian time $\hbar/(k_B T)$. While electrical tra… ▽ More The electron-hole plasma in charge-neutral graphene is predicted to realize a quantum critical system whose transport features a universal hydrodynamic description, even at room temperature. This quantum critical "Dirac fluid" is expected to have a shear viscosity close to a minimum bound, with an inter-particle scattering rate saturating at the Planckian time $\hbar/(k_B T)$. While electrical transport measurements at finite carrier density are consistent with hydrodynamic electron flow in graphene, a "smoking gun" of viscous behavior remains elusive. In this work, we directly image viscous Dirac fluid flow in graphene at room temperature via measurement of the associated stray magnetic field. Nanoscale magnetic imaging is performed using quantum spin magnetometers realized with nitrogen vacancy (NV) centers in diamond. Scanning single-spin and wide-field magnetometry reveals a parabolic Poiseuille profile for electron flow in a graphene channel near the charge neutrality point, establishing the viscous transport of the Dirac fluid. This measurement is in contrast to the conventional uniform flow profile imaged in an Ohmic conductor. Via combined imaging-transport measurements, we obtain viscosity and scattering rates, and observe that these quantities are comparable to the universal values expected at quantum criticality. This finding establishes a nearly-ideal electron fluid in neutral graphene at room temperature. Our results pave the way to study hydrodynamic transport in quantum critical fluids relevant to strongly-correlated electrons in high-$T_c$ superconductors. This work also highlights the capability of quantum spin magnetometers to probe correlated-electronic phenomena at the nanoscale. △ Less

Submitted 26 August, 2020; v1 submitted 26 May, 2019; originally announced May 2019.

Comments: Author list and title have been updated in published version

Journal ref: Nature 583, 537 (2020)

On spinodal decomposition in alnico---a transmission electron microscopy and atom probe tomography study

Authors: Lin Zhou, Wei Guo, Jonathan D. Poplawsky, Liqin Ke, Wei Tang, Iver E. Anderson, Matthew J. Kramer

Abstract: Alnico is a prime example of a finely tuned nanostructure whose magnetic properties are intimately connected to magnetic annealing (MA) during spinodal transformation and subsequent lower temperature annealing (draw) cycles. Using a combination of transmission electron microscopy and atom probe tomography, we show how these critical processing steps affect the local composition and nanostructure e… ▽ More Alnico is a prime example of a finely tuned nanostructure whose magnetic properties are intimately connected to magnetic annealing (MA) during spinodal transformation and subsequent lower temperature annealing (draw) cycles. Using a combination of transmission electron microscopy and atom probe tomography, we show how these critical processing steps affect the local composition and nanostructure evolution with impact on magnetic properties. The nearly 2-fold increase of intrinsic coercivity ($H_\text{ci}$) during the draw cycle is not adequately explained by chemical refinement of the spinodal phases. Instead, increased Fe-Co phase ($α_1$) isolation, development of Cu-rich spheres/rods/blades and additional $α_1$ rod precipitation that occurs during the MA and draw, likely play a key role in $H_\text{ci}$ enhancement. Chemical ordering of the Al-Ni-phase ($α_2$) and formation of Ni-rich ($α_3$) may also contribute. Unraveling of the subtle effect of these nano-scaled features is crucial to understanding on how to improve shape anisotropy in alnico magnets. △ Less

Submitted 30 October, 2018; originally announced October 2018.

Journal ref: Acta Materialia, 153:15 (2018)

Simulation of alnico coercivity

Authors: Liqin Ke, Ralph Skomski, Todd D. Hoffmann, Lin Zhou, Wei Tang, Duane D. Johnson, Matthew J. Kramer, Iver E. Anderson, C. -Z. Wang

Abstract: Micromagnetic simulations of alnico show substantial deviations from Stoner-Wohlfarth behavior due to the unique size and spatial distribution of the rod-like Fe-Co phase formed during spinodal decomposition in an external magnetic field. The maximum coercivity is limited by single-rod effects, especially deviations from ellipsoidal shape, and by interactions between the rods. Both the exchange in… ▽ More Micromagnetic simulations of alnico show substantial deviations from Stoner-Wohlfarth behavior due to the unique size and spatial distribution of the rod-like Fe-Co phase formed during spinodal decomposition in an external magnetic field. The maximum coercivity is limited by single-rod effects, especially deviations from ellipsoidal shape, and by interactions between the rods. Both the exchange interaction between connected rods and magnetostatic interaction between rods are considered, and the results of our calculations show good agreement with recent experiments. Unlike systems dominated by magnetocrystalline anisotropy, coercivity in alnico is highly dependent on size, shape, and geometric distribution of the Fe-Co phase, all factors that can be tuned with appropriate chemistry and thermal-magnetic annealing. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Journal ref: Applied Physics Letters, 111(2):022403 (2017)

Microstructural and magnetic property evolution with different heat-treatment conditions in an alnico alloy

Authors: Lin Zhou, Wei Tang, Liqin Ke, Jonathan D. Poplawsky, Iver E. Anderson, Matthew J. Kramer

Abstract: Further property enhancement of alnico, an attractive near-term, non-rare-earth permanent magnet alloy system, primarily composed of Al, Ni, Co, and Fe, relies on improved morphology control and size refinement of its complex spinodally decomposed nanostructure that forms during heat-treatment. Using a combination of transmission electron microscopy and atom probe tomography techniques, this study… ▽ More Further property enhancement of alnico, an attractive near-term, non-rare-earth permanent magnet alloy system, primarily composed of Al, Ni, Co, and Fe, relies on improved morphology control and size refinement of its complex spinodally decomposed nanostructure that forms during heat-treatment. Using a combination of transmission electron microscopy and atom probe tomography techniques, this study evaluates the magnetic properties and microstructures of an isotropic 32.4Fe-38.1Co-12.9Ni-7.3Al-6.4Ti-3.0Cu (wt.$\%$) alloy in terms of processing parameters such as annealing temperature, annealing time, application of an external magnetic field, as well as low-temperature "draw" annealing. Optimal spinodal morphology and spacing is formed within a narrow temperature and time range ($\sim 840 \unicode{x2103}$ and 10 min during thermal-magnetic annealing (MA). The ideal morphology is a mosaic structure consisting of periodically arrayed $\sim 40$ nm diameter (Fe-Co)-rich rods ($α_1$ phase) embedded in an (Al-Ni)-rich ($α_2$ phase) matrix. A Cu-enriched phase with a size of $\sim$ 3-5 nm is located at the corners of two adjacent $\{110\}$ facets of the $α_1$ phase. The MA process significantly increased remanence ($B_\text{r}$) ($\sim$ 40-70 $\%$) of the alloy due to biased elongation of the $α_1$ phase along the $\langle100\rangle$ crystallographic direction, which is closest in orientation to the applied magnetic field. The optimum magnetic properties of the alloy with an intrinsic coercivity ($H_\text{cj}$) of 1845 Oe and a maximum energy product ($BH_\text{max}$) of 5.9 MGOe were attributed to the uniformity of the mosaic structure. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Journal ref: Acta Materialia, 133:73 (2017)

Pressure, compressibility, and contact of the two-dimensional attractive Fermi gas

Authors: E. R. Anderson, J. E. Drut

Abstract: Using ab initio lattice methods, we calculate the finite temperature thermodynamics of homogeneous two-dimensional spin-1/2 fermions with attractive short-range interactions. We present results for the density, pressure, compressibility, and quantum anomaly (i.e. Tan's contact) for a wide range of temperatures and coupling strengths, focusing on the unpolarized case. Within our statistical and sys… ▽ More Using ab initio lattice methods, we calculate the finite temperature thermodynamics of homogeneous two-dimensional spin-1/2 fermions with attractive short-range interactions. We present results for the density, pressure, compressibility, and quantum anomaly (i.e. Tan's contact) for a wide range of temperatures and coupling strengths, focusing on the unpolarized case. Within our statistical and systematic uncertainties, our prediction for the density equation of state differs quantitatively from the prediction by Luttinger-Ward theory in the strongly coupled region of parameter space, but otherwise agrees well with it. We also compare our calculations with the second- and third-order virial expansion, with which they are in excellent agreement in the low-fugacity regime. △ Less

Submitted 6 May, 2015; originally announced May 2015.

Comments: 7 pages, 8 figures, including supplemental materials

Journal ref: Phys. Rev. Lett. 115, 115301 (2015)

Energy, contact, and density profiles of one-dimensional fermions in a harmonic trap via non-uniform lattice Monte Carlo

Authors: C. E. Berger, E. R. Anderson, J. E. Drut

Abstract: We determine the ground-state energy and Tan's contact of attractively interacting few-fermion systems in a one-dimensional harmonic trap, for a range of couplings and particle numbers. Complementing those results, we show the corresponding density profiles. The calculations were performed with a new lattice Monte Carlo approach based on a non-uniform discretization of space, defined via Gauss-Her… ▽ More We determine the ground-state energy and Tan's contact of attractively interacting few-fermion systems in a one-dimensional harmonic trap, for a range of couplings and particle numbers. Complementing those results, we show the corresponding density profiles. The calculations were performed with a new lattice Monte Carlo approach based on a non-uniform discretization of space, defined via Gauss-Hermite quadrature points and weights. This particular coordinate basis is natural for systems in harmonic traps, and can be generalized to traps of other shapes. In all cases, it yields a position-dependent coupling and a corresponding non-uniform Hubbard-Stratonovich transformation. The resulting path integral is performed with hybrid Monte Carlo as a proof of principle for calculations at finite temperature and in higher dimensions. We present results for N=4,...,20 particles (although the method can be extended beyond that) to cover the range from few- to many-particle systems. This method is also exact up to statistical and systematic uncertainties, which we account for -- and thus also represents the first ab initio calculation of this system, providing a benchmark for other methods and a prediction for ultracold-atom experiments. △ Less

Submitted 8 June, 2015; v1 submitted 29 October, 2014; originally announced October 2014.

Comments: 13 pages, 10 figures; including supplemental material

Journal ref: Phys. Rev. A 91, 053618 (2015)

Universality in one-dimensional fermions at finite temperature: Density, pressure, compressibility, and contact

Authors: M. D. Hoffman, P. D. Javernick, A. C. Loheac, W. J. Porter, E. R. Anderson, J. E. Drut

Abstract: We present finite-temperature, lattice Monte Carlo calculations of the particle number density, compressibility, pressure, and Tan's contact of an unpolarized system of short-range, attractively interacting spin-1/2 fermions in one spatial dimension, i.e., the Gaudin-Yang model. In addition, we compute the second-order virial coefficients for the pressure and the contact, both of which are in exce… ▽ More We present finite-temperature, lattice Monte Carlo calculations of the particle number density, compressibility, pressure, and Tan's contact of an unpolarized system of short-range, attractively interacting spin-1/2 fermions in one spatial dimension, i.e., the Gaudin-Yang model. In addition, we compute the second-order virial coefficients for the pressure and the contact, both of which are in excellent agreement with the lattice results in the low-fugacity regime. Our calculations yield universal predictions for ultracold atomic systems with broad resonances in highly constrained traps. We cover a wide range of couplings and temperatures and find results that support the existence of a strong-coupling regime in which the thermodynamics of the system is markedly different from the noninteracting case. We compare and contrast our results with identical systems in higher dimensions. △ Less

Submitted 17 March, 2015; v1 submitted 27 October, 2014; originally announced October 2014.

Comments: 6 pages, 7 figures; improved, published version

Journal ref: Phys. Rev. A 91, 033618 (2015)

A new regime of nanoscale thermal transport: collective diffusion counteracts dissipation inefficiency

Authors: Kathleen M. Hoogeboom-Pot, Jorge N. Hernandez-Charpak, Erik H. Anderson, Xiaokun Gu, Ronggui Yang, Margaret M. Murnane, Henry C. Kapteyn, Damiano Nardi

Abstract: Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics, thermoelectric devices, nano-enhanced photovoltaics and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at… ▽ More Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics, thermoelectric devices, nano-enhanced photovoltaics and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier's law for heat conduction dramatically over-predicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interplay between neighboring heat sources can facilitate efficient, diffusive-like heat dissipation, even from the smallest nanoscale heat sources. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as projected. Finally, we demonstrate a unique and new capability to extract mean free path distributions of phonons in materials, allowing the first experimental validation of differential conductivity predictions from first-principles calculations. △ Less

Submitted 2 July, 2014; originally announced July 2014.

Comments: Main text: 18 pages, 4 figures. Supplementary Information: 13 pages, 9 figures

Local Structure of La1-xSrxCoO3 determined from EXAFS and neutron PDF studies

Authors: N. Sundaram, Y. Jiang, I. E. Anderson, D. P. Belanger, C. H. Booth, F. Bridges, J. F. Mitchell, Th. Proffen, H. Zheng

Abstract: The combined local structure techniques, extended x-ray absorption fine structure (EXAFS) and neutron pair distribution function analysis, have been used for temperatures 4 <= T <= 330 K to rule out a large Jahn-Teller (JT) distortion of the Co-O bond in La1-xSrxCoO3 for a significant fraction of Co sites (x <= 0.35), indicating few, if any, JT-active, singly occupied e_g Co sites exist. The combined local structure techniques, extended x-ray absorption fine structure (EXAFS) and neutron pair distribution function analysis, have been used for temperatures 4 <= T <= 330 K to rule out a large Jahn-Teller (JT) distortion of the Co-O bond in La1-xSrxCoO3 for a significant fraction of Co sites (x <= 0.35), indicating few, if any, JT-active, singly occupied e_g Co sites exist. △ Less

Submitted 2 February, 2009; originally announced February 2009.

Comments: 5 pages

Journal ref: Phys. Rev. Lett. 102, 026401 (2009)

All-Inorganic Spin-Cast Nanoparticle Solar Cells with Non-Selective Electrodes

Authors: I. E. Anderson, J. D. Olson, L. Yang, S. A. Carter

Abstract: Spin-cast all-inorganic nanoparticle solutions have been used to make a CdTe/CdSe solar cell with an efficiency of up to 2.8% without alumina or calcium buffer layers. The type of junction and non-selective nature of the contacts made to these devices is explored. Spin-cast all-inorganic nanoparticle solutions have been used to make a CdTe/CdSe solar cell with an efficiency of up to 2.8% without alumina or calcium buffer layers. The type of junction and non-selective nature of the contacts made to these devices is explored. △ Less

Submitted 4 December, 2008; v1 submitted 28 August, 2008; originally announced August 2008.

Block Diagonalization using SRG Flow Equations

Authors: E. Anderson, S. K. Bogner, R. J. Furnstahl, E. D. Jurgenson, R. J. Perry, A. Schwenk

Abstract: By choosing appropriate generators for the Similarity Renormalization Group (SRG) flow equations, different patterns of decoupling in a Hamiltonian can be achieved. Sharp and smooth block-diagonal forms of phase-shift equivalent nucleon-nucleon potentials in momentum space are generated as examples and compared to analogous low-momentum interactions ("v_lowk"). By choosing appropriate generators for the Similarity Renormalization Group (SRG) flow equations, different patterns of decoupling in a Hamiltonian can be achieved. Sharp and smooth block-diagonal forms of phase-shift equivalent nucleon-nucleon potentials in momentum space are generated as examples and compared to analogous low-momentum interactions ("v_lowk"). △ Less

Submitted 7 January, 2008; originally announced January 2008.

Comments: 4 pages, 9 figures (pdfLaTeX)

Journal ref: Phys.Rev.C77:037001,2008

Effect of annealing on glassy dynamics and non-Fermi liquid behavior in UCu_4Pd

Authors: D. E. MacLaughlin, M. S. Rose, J. E. Anderson, O. O. Bernal, R. H. Heffner, G. J. Nieuwenhuys, R. E. Baumbach, N. P. Butch, M. B. Maple

Abstract: Longitudinal-field muon spin relaxation (LF-muSR) experiments have been performed in unannealed and annealed samples of the heavy-fermion compound UCu_4Pd to study the effect of disorder on non-Fermi liquid behavior in this material. The muon spin relaxation functions G(t,H) obey the time-field scaling relation G(t,H) = G(t/H^gamma) previously observed in this compound. The observed scaling expo… ▽ More Longitudinal-field muon spin relaxation (LF-muSR) experiments have been performed in unannealed and annealed samples of the heavy-fermion compound UCu_4Pd to study the effect of disorder on non-Fermi liquid behavior in this material. The muon spin relaxation functions G(t,H) obey the time-field scaling relation G(t,H) = G(t/H^gamma) previously observed in this compound. The observed scaling exponent gamma = 0.3 pm 0.1, independent of annealing. Fits of the stretched-exponential relaxation function G(t) = exp[-(Lambda t)^K] to the data yielded stretching exponentials K < 1 for all samples. Annealed samples exhibited a reduction of the relaxation rate at low temperatures, indicating that annealing shifts fluctuation noise power to higher frequencies. There was no tendency of the inhomogeneous spread in rates to decrease with annealing, which modifies but does not eliminate the glassy spin dynamics reported previously in this compound. The correlation with residual resistivity previously observed for a number of NFL heavy-electron materials is also found in the present work. △ Less

Submitted 30 August, 2005; originally announced August 2005.

Comments: 4 pages, 3 figures, submitted to 10th International Conference on Muon Spin Rotation, Relaxation, and Resonance, Oxford, UK, August 2005

Critical slowing down in the geometrically frustrated pyrochlore antiferromagnet Gd_2Ti_2O_7

Authors: D. E. MacLaughlin, M. S. Rose, J. E. Anderson, Lei Shu, R. H. Heffner, T. Kimura, G. D. Morris, O. O. Bernal

Abstract: Longitudinal-field muon spin relaxation experiments have been carried out in the paramagnetic state of single-crystal Gd_2Ti_2O_7 just above the phase transition at T_m = 1.0 K. At high applied fields the exponential relaxation time T_1 is proportional to field, whereas T_1 saturates below a crossover field B_c that is ~2.5 T at 1.5 K and decreases as T_m is approached. At low fields the relaxat… ▽ More Longitudinal-field muon spin relaxation experiments have been carried out in the paramagnetic state of single-crystal Gd_2Ti_2O_7 just above the phase transition at T_m = 1.0 K. At high applied fields the exponential relaxation time T_1 is proportional to field, whereas T_1 saturates below a crossover field B_c that is ~2.5 T at 1.5 K and decreases as T_m is approached. At low fields the relaxation rate increases markedly as the freezing temperature is approached, as expected for critical slowing down of the spin fluctuations, but the increase is suppressed by applied field. This behavior is consistent with the very long autocorrelation function cutoff time implied by the low value of B_c. △ Less

Submitted 30 August, 2005; originally announced August 2005.

Comments: 4 pages, 2 figures, submitted to 10th International Conference on Muon Spin Rotation, Relaxation, and Resonance, Oxford, UK, August 2005

New limits on the ordered moments in alpha-Pu and Ga-stabilized delta-Pu

Authors: R. H. Heffner, G. D. Morris, M. J. Fluss, B. Chung, D. E. MacLaughlin, L. Shu, J. E. Anderson

Abstract: We present the first muon spin relaxation measurements ever performed on elemental Pu, and set the most stringent upper limits to date on the magnitude of the ordered moment in alpha-Pu and delta-stabilized Pu (alloyed with 4.3 at. % Ga). Assuming a nominal hyperfine coupling field of 1 kOe per Bohr magneton we set an upper limit of 0.001 Bohr magnetons for both materials at T = 4 K. We present the first muon spin relaxation measurements ever performed on elemental Pu, and set the most stringent upper limits to date on the magnitude of the ordered moment in alpha-Pu and delta-stabilized Pu (alloyed with 4.3 at. % Ga). Assuming a nominal hyperfine coupling field of 1 kOe per Bohr magneton we set an upper limit of 0.001 Bohr magnetons for both materials at T = 4 K. △ Less

Submitted 29 August, 2005; originally announced August 2005.

Comments: 4 pages, 3 figures. Submitted to 10th International Conference on Muon Spin Rotation, Relaxation and Resonance, Oxford, UK, August 2005

Report number: LA-UR-05-5809

Penetration depth, symmetry breaking, and gap nodes in superconducting PrOs4Sb12

Authors: Lei Shu, D. E. MacLaughlin, R. H. Heffner, G. D. Morris, O. O. Bernal, F. Callaghan, J. E. Sonier, A. Bosse, J. E. Anderson, W. M. Yuhasz, N. A. Frederick, M. B. Maple

Abstract: Transverse-field muon spin relaxation rates in single crystals of the heavy-fermion superconductor PrOs4Sb12 (Tc = 1.85 K) are nearly constant in the vortex state for temperatures below ~0.5Tc. This suggests that the superconducting penetration depth lambda(T) is temperature-independent at low temperatures, consistent with a gapped quasiparticle excitation spectrum. In contrast, radiofrequency m… ▽ More Transverse-field muon spin relaxation rates in single crystals of the heavy-fermion superconductor PrOs4Sb12 (Tc = 1.85 K) are nearly constant in the vortex state for temperatures below ~0.5Tc. This suggests that the superconducting penetration depth lambda(T) is temperature-independent at low temperatures, consistent with a gapped quasiparticle excitation spectrum. In contrast, radiofrequency measurements yield a stronger temperature dependence of lambda(T), indicative of point nodes in the gap. A similar discrepancy exists in superconducting Sr2RuO4 which, like PrOs4Sb12, breaks time-reversal symmetry (TRS) below Tc, but not in a number of non-TRS-breaking superconductors. △ Less

Submitted 9 February, 2005; originally announced February 2005.

Comments: 4 pages, 3 figures, submitted to Phys. Rev. Lett

The symmetry of the superconducting order parameter in PuCoGa$_5$

Authors: G. D Morris, R. H. Heffner, E. D. Bauer, L. A. Morales, J. S. Sarrao, M. J. Fluss, D. E. MacLaughlin, L. Shu, J. E. Anderson

Abstract: The symmetry of the superconducting order parameter in single-crystalline PuCoGa$_5$ ($T_{\rm c} = 18.5$ K) is investigated via zero- and transverse- field muon spin relaxation ($μ$SR) measurements, probing the possible existence of orbital and/or spin moments (time reversal-symmetry violation TRV) associated with the superconducting phase and the in-plane magnetic-field penetration depth… ▽ More The symmetry of the superconducting order parameter in single-crystalline PuCoGa$_5$ ($T_{\rm c} = 18.5$ K) is investigated via zero- and transverse- field muon spin relaxation ($μ$SR) measurements, probing the possible existence of orbital and/or spin moments (time reversal-symmetry violation TRV) associated with the superconducting phase and the in-plane magnetic-field penetration depth $λ(T)$ in the mixed state, respectively. We find no evidence for TRV, and show that the superfluid density, or alternatively, $Δλ(T) = λ(T) - λ(0)$, are $\propto T$ for $T/T_{\rm c} \leq 0.5$. Taken together these measurements are consistent with an even-parity (pseudo-spin singlet), d-wave pairing state. △ Less

Submitted 14 January, 2005; originally announced January 2005.

Comments: 4 pages, 5 figures

Report number: LA-UR-04-7847

Magnetotransport in Single Crystal Half-Heusler Compounds

Authors: K. Ahilan, M. C. Bennett, M. C. Aronson, N. E. Anderson, P. C. Canfield, E. Munoz-Sandoval, T. Gortenmulder, R. Hendrixx, J. A. Mydosh

Abstract: We present the results of electrical resistivity and Hall effect measurements on single crystals of HfNiSn, TiPtSn, and TiNiSn. Semiconducting behavior is observed in each case, involving the transport of a small number of highly compensated carriers. Magnetization measurements suggest that impurities and site disorder create both localized magnetic moments and extended paramagnetic states, with… ▽ More We present the results of electrical resistivity and Hall effect measurements on single crystals of HfNiSn, TiPtSn, and TiNiSn. Semiconducting behavior is observed in each case, involving the transport of a small number of highly compensated carriers. Magnetization measurements suggest that impurities and site disorder create both localized magnetic moments and extended paramagnetic states, with the susceptibility of the latter increasing strongly with reduced temperature. The magnetoresistance is sublinear or linear in fields ranging from 0.01 - 9 Tesla at the lowest temperatures. As the temperature increases, the normal quadratic magnetoresistance is regained, initially at low fields, and at the highest temperatures extending over the complete range of fields. The origin of the vanishingly small field scale implied by these measurements remains unknown, presenting a challenge to existing classical and quantum mechanical theories of magnetoresistance. △ Less

Submitted 27 October, 2003; v1 submitted 16 October, 2003; originally announced October 2003.

Comments: 15 pages, 12 figures

Titanium additions to MgB2 conductors

Authors: N. E. Anderson, Jr., W. E. Straszheim, S. L. Bud'ko, P. C. Canfield, D. K. Finnemore, R. J. Suplinskas

Abstract: A series of do** experiments are reported for MgB2 conductors that have been synthesized using doped boron fibers prepared by chemical vapor deposition(CVD) methods. Undoped MgB2 samples prepared from CVD prepared fibers consistently give critical current densities, Jc, in the range of 500,000 A/cm^2 in low field at 5K. These values fall by a factor of about 100 as the magnetic field increases… ▽ More A series of do** experiments are reported for MgB2 conductors that have been synthesized using doped boron fibers prepared by chemical vapor deposition(CVD) methods. Undoped MgB2 samples prepared from CVD prepared fibers consistently give critical current densities, Jc, in the range of 500,000 A/cm^2 in low field at 5K. These values fall by a factor of about 100 as the magnetic field increases to 3T. For heavily Ti-doped boron fibers where the B/Ti ratio is comparable to 1, there is a substantial suppression of both Tc, superconducting volume fraction, and Jc values. If, however, a sample with a few percent Ti in B is deposited on a carbon coated SiC substrate and reacted at 1100 degrees C for 15 min, then Tc is suppressed only a couple of degrees Kelvin and critical current densities are found to be approximately 2-5 x 10^6 A/cm^2 for superconducting layers ranging from 4-10 micrometers thick. These materials show Jc values over 10,000 A/cm^2 at 25K and 1.3 T. △ Less

Submitted 12 February, 2003; originally announced February 2003.

Comments: 10 pages, 6 figures

CVD routes to MgB2 conductors

Authors: D. K. Finnemore, W. E. Straszheim, S. L. Bud'ko, P. C. Canfield, N. E. Anderson Jr, R. J. Suplinskas

Abstract: Processing methods are described for the development of magnesium diboride wire using the chemical vapor deposition (CVD) to produce long lengths of suitably doped starting boron fiber. It is found that titanium can be co-deposited with the boron to make long lengths of doped fiber that contain both TiB and TiB2. When this fiber is reacted in Mg vapor to transform boron into MgB2, the resulting… ▽ More Processing methods are described for the development of magnesium diboride wire using the chemical vapor deposition (CVD) to produce long lengths of suitably doped starting boron fiber. It is found that titanium can be co-deposited with the boron to make long lengths of doped fiber that contain both TiB and TiB2. When this fiber is reacted in Mg vapor to transform boron into MgB2, the resulting conductor has a superconducting critical current density of about 5 times 10^6 A/cm^2 at 5K and self field. The critical current density at 25K and 1 Tesla is 10,000 A/cm^2. Using optical methods to define grain boundaries and energy dispersive X-rays to determine Ti and Mg concentration, these samples show a fine dispersion of $Ti$ through out the grains and no conspicuous precipitation of TiB2 on the MgB2 grain boundaries. This is to be contrasted with the precipitation of TiB2 on MgB2 grain boundaries observed for samples prepared by solid state reaction of Ti, Mg, and B powders. Introducing Ti impurities into the B during the CVD deposition of the B gives a distribution of TiB2 in the resulting MgB2 different from solid state reaction of powders. △ Less

Submitted 12 February, 2003; originally announced February 2003.

Comments: 14 pages and 10 figures. submitted to Physica C

Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes

Authors: A. Bachtold, M. S. Fuhrer, S. Plyasunov, M. Forero, Erik H. Anderson, A. Zettl, Paul L. McEuen

Abstract: We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multi-walled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled carbon nanotubes are ballistic conductors over micron lengths. Semiconducting single-walled carbon nanotubes are shown to have a series of large barriers to co… ▽ More We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multi-walled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled carbon nanotubes are ballistic conductors over micron lengths. Semiconducting single-walled carbon nanotubes are shown to have a series of large barriers to conduction along their length. These measurements are also used to probe the contact resistance and locate breaks in carbon nanotube circuits. △ Less

Submitted 14 February, 2000; originally announced February 2000.

Comments: 4 pages