Showing 1–16 of 16 results for author: Anadón, A

Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system

Authors: Alberto Anadón, Armando Pezo, Iciar Arnay, Rubén Guerrero, Adrián Gudín, Jaafar Ghanbaja, Julio Camarero, Aurelien Manchon, Sebastien Petit-Watelot, Paolo Perna, Juan-Carlos Rojas-Sánchez

Abstract: The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum… ▽ More The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum layers by exploring spin-pum** on-chip devices. Furthermore, we find that the spin conversion is also anisotropic. We attribute this enhancement and anisotropy to the asymmetric Rashba contributions driven by an unbalanced spin accumulation at the differently hybridized top and bottom graphene interfaces, as highlighted by ad-hoc first-principles theory. The improvement in spin-to-charge conversion as well as its anisotropy reveals the importance of interfaces in hybrid 2D-thin film systems opening up new possibilities for engineering spin conversion in 2D materials, leading to potential advances in memory, logic applications, or unconventional computing. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: 33 pages with double-spaced paragraphs. 23 pages without references. 4 figures and one extended figure. Supplementary information, not shown, contains 21 pages and 23 supplementary figures

Self-induced spin pum** and inverse spin Hall effect in single FePt thin films

Authors: J. L. Ampuero, A. Anadón, H. Damas, J. Ghanbaja, S. Petit-Watelot, J. -C. Rojas-Sánchez, D. Velázquez Rodriguez, J. E. Gómez, A. Butera, L. Avilés-Félix

Abstract: In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pum** ferromagnetic resonance experiments performed on both a resonance cavity and on patterned devices. We clearly observe a self-induced signal in a single FePt layer. The sign of a single FePt spin pum** voltage signal is consistent with a ty… ▽ More In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pum** ferromagnetic resonance experiments performed on both a resonance cavity and on patterned devices. We clearly observe a self-induced signal in a single FePt layer. The sign of a single FePt spin pum** voltage signal is consistent with a typical bilayer with a positive spin Hall angle layer such as that of Pt on top of a ferromagnet (FM), substrate//FM/Pt. Structural analysis shows a strong composition gradient due to natural oxidation at both FePt interfaces, with the Si substrate and with the air. The FePt-thickness dependence of the self-induced charge current produced allowed us to obtain $λ_ \text{FePt}=(1.5\pm 0.1)$ nm and self-induced $θ_ \text{self-FePt}=0.047 \pm 0.003$, with efficiency for reciprocal effects applications $θ_ \text{self-FePt} \times λ_ \text{FePt} = 0.071$ nm which is comparable to that of Pt, $θ_ \text{SH-Pt} \times λ_ \text{Pt} = 0.2$ nm. Moreover, by studying bilayer systems such as Si//FePt/Pt and Si//Pt//FePt we independently could extract the individual contributions of the external inverse spin Hall effect of Pt and the self-induced inverse spin Hall effect of FePt. Notably, this method gives consistent values of charge currents produced due to only self-induced inverse spin Hall effect in FePt layers. These results advance our understanding of spin-to-charge interconversion mechanisms in composite thin films and pave the way for the development of next-generation spintronics devices based on self-torque. △ Less

Submitted 20 May, 2024; originally announced May 2024.

Comments: 13 pages, 7 figures

Isotropic spin and inverse spin Hall effect in epitaxial (111)-oriented Pt/Co bilayers

Authors: Adrián Gudín, Alberto Anadón, Iciar Arnay, Rubén Guerrero, Julio Camarero, Sebastien Petit-Watelot, Paolo Perna, Juan-Carlos Rojas-Sánchez

Abstract: The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion ef… ▽ More The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion efficiency is isotropic in polycrystalline Pt samples, an ongoing debate persists regarding its dependence on the crystalline direction in single crystalline samples. In this study, we aim to comprehensively evaluate the in-plane anisotropy of spin-charge interconversion using an array of complementary Spin Hall and inverse Spin Hall techniques with both incoherent and coherent excitation. Specifically, we investigate the spin-to-charge interconversion in epitaxial, (111)-oriented, Co/Pt bilayers with low surface roughness, as resulted from x-ray experiments. By varying the thickness of the Pt layer, we gain insights into the spin-charge interconversion in epitaxial Pt and highlight the effects of the interfaces. Our results demonstrate an isotropic behavior within the limits of our detection uncertainty. This finding significantly enhances our understanding of spin conversion in one of the most relevant systems in spintronics and paves the way for future research in this field. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Comments: Article accepted for publication in Physical Review Materials, DOI not received yet

Spin transport properties of spinel vanadate-based heterostructures

Authors: Antonio Peña Corredor, Alberto Anadón, Laurent Schlur, Jérôme Robert, Héloïse Damas, Juan-Carlos Rojas-Sánchez, Sébastien Petit-Watelot, Nathalie Viart, Daniele Preziosi, Christophe Lefevre

Abstract: Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin-orbit coupling, they offer promising potential f… ▽ More Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin-orbit coupling, they offer promising potential for energy-efficient spin-orbitronics applications. The intrinsic electronic correlations characterizing those strongly correlated oxides hold the promises to add extra control-knobs to the desired efficient spin-wave propagation and abrupt magnetization switching phenomena. Spinel vanadate FeV2O4 (FVO) exhibits several structural phase transitions which are accompanied by an intricate interplay of magnetic, charge and orbital orderings. When grown as a thin film onto SrTiO3, the compressive strain state induces a perpendicular magnetic anisotropy, making FVO-based heterostructures desirable for spin-orbitronics applications. In this study, we have optimised the deposition of stoichiometric and epitaxial Pt/FVO heterostructures by Pulsed Laser Deposition and examined their spin-related phenomena. From angle-dependent magnetotransport measurements, we observed both Anisotropic Magnetoresistance (AMR) and Spin Hall Magnetoresistance (SMR) effects. Our findings show the SMR component as the primary contributor to the overall magnetoresistance, whose high value of 0.12% is only comparable to properly optimized oxide-based systems. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Spin-to-charge conversion by spin pum** in sputtered polycrystalline Bi$_x$Se$_{1-x}$

Authors: Isabel C Arango, Alberto Anadón, Silvestre Novoa, Van Tuong Pham, Won Young Choi, Junior Alegre, Laurent Badie, Andrey Chuvilin, Sébastien Petit-Watelot, Luis E Hueso, Fèlix Casanova, Juan-Carlos Rojas-Sánchez

Abstract: Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin H… ▽ More Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pum** technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies. △ Less

Submitted 16 June, 2023; v1 submitted 24 December, 2022; originally announced December 2022.

Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$

Authors: Alberto Anadón, Elodie Martin, Suvidyakumar Homkar, Benjamin Meunier, Maxime Verges, Heloise Damas, Junior Alegre, Christophe Lefevre, Francois Roulland, Carsten Dubs, Morris Lindner, Ludovic Pasquier, Olivier Copie, Karine Dumesnil, Rafael Ramos, Daniele Preziosi, Sébastien Petit-Watelot, Nathalie Viart, Juan-Carlos Rojas-Sánchez

Abstract: In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of more efficient devices due to the lower Joule heat losses. In this context, Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) is a good candidate for spintronics applications, sin… ▽ More In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of more efficient devices due to the lower Joule heat losses. In this context, Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) is a good candidate for spintronics applications, since it can exhibit multiferroicity and presents a spin Hall magnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Pt bilayer. Here, we explore GFO utilizing thermo-spin measurements in an on-chip approach. By carefully considering the geometry of our thermo-spin devices we are able to quantify the spin Seebeck effect and the spin current generation in a GFO/Pt bilayer, obtaining a value comparable to that of YIG/Pt. This further confirms the promises of an efficient spin current generation with the possibility of an electric-field manipulation of the magnetic properties of the system in an insulating ferrimagnetic material. △ Less

Submitted 3 July, 2022; v1 submitted 27 June, 2022; originally announced June 2022.

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Authors: Beatriz Muñiz Cano, Adrían Gudín, Jaime Sánchez-Barriga, Oliver J. Clark, Alberto Anadón, Jose Manuel Díez, Pablo Olleros-Rodríguez, Fernando Ajejas, Iciar Arnay, Matteo Jugovac, Julien Rault, Patrick Le Févre, François Bertran, Donya Mazhjoo, Gustav Bihlmayer, Stefan Blügel, Rodolfo Miranda, Julio Camarero, Miguel Angel Valbuena, Paolo Perna

Abstract: Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g… ▽ More Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices. △ Less

Submitted 1 May, 2023; v1 submitted 9 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Ferrimagnet GdFeCo characterization for spin-orbitronics: large field-like and dam**-like torques

Authors: Héloïse Damas, Alberto Anadon, David Céspedes-Berrocal, Junior Alegre-Saenz, Jean-Loïs Bello, Aldo Arriola-Córdova, Sylvie Migot, Jaafar Ghanbaja, Olivier Copie, Michel Hehn, Vincent Cros, Sébastien Petit-Watelot, Juan-Carlos Rojas-Sánchez

Abstract: Spintronics is showing promising results in the search for new materials and effects to reduce energy consumption in information technology. Among these materials, ferrimagnets are of special interest, since they can produce large spin currents that trigger the magnetization dynamics of adjacent layers or even their own magnetization. Here, we present a study of the generation of spin current by G… ▽ More Spintronics is showing promising results in the search for new materials and effects to reduce energy consumption in information technology. Among these materials, ferrimagnets are of special interest, since they can produce large spin currents that trigger the magnetization dynamics of adjacent layers or even their own magnetization. Here, we present a study of the generation of spin current by GdFeCo in a GdFeCo/Cu/NiFe trilayer where the FeCo sublattice magnetization is dominant at room temperature. Magnetic properties such as the saturation magnetization are deduced from magnetometry measurements while dam** constant is estimated from spin-torque ferromagnetic resonance (ST-FMR). We show that the overall dam**-like (DL) and field-like (FL) effective fields as well as the associated spin Hall angles can be reliably obtained by performing the dependence of ST-FMR by an added dc current. The sum of the spin Hall angles for both the spin Hall effect (SHE) and the spin anomalous Hall effect (SAHE) symmetries are: $θ_{DL}^{SAHE} + θ_{DL}^{SHE}=-0.15 \pm 0.05$ and $θ_{FL}^{SAHE} + θ_{FL}^{SHE}=0.026 \pm 0.005$. From the symmetry of ST-FMR signals we find that $θ_{DL}^{SHE}$ is positive and dominated by the negative $θ_{DL}^{SAHE}$. The present study paves the way for tuning the different symmetries in spin conversion in highly efficient ferrimagnetic systems. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Comments: 20 pages, 4 figures

Journal ref: Physica Status Solidi - Rapid Research Letters 2022

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Authors: Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrian Gudín, Alejandra Guedeja-Marrón, Jose Manuel Diez Toledano, Jan Gärtner, Alberto Anadón, Maria Varela, Julio Camarero, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck

Abstract: Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation… ▽ More Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. △ Less

Submitted 23 March, 2023; v1 submitted 20 September, 2021; originally announced September 2021.

Comments: Accepted at ACS Applied Materials & Interfaces

Direct determination of Spin-Orbit torque by using dc current-voltage characteristics

Authors: R. Guerrero, A. Anadon, A. Gudin, J. M. Diez, P. Olleros-Rodriguez, M. Muñoz, R. Miranda, J. Camarero, P. Perna

Abstract: Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injec… ▽ More Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injected into the device. In this work, we present a new experimental technique to quantify directly the SOT based on the measurement of non-linearities of the dc current-voltage (IV) characteristics in Hall bar devices employing a simple instrumentation. Through the analysis of the IV curves, the technique provides directly the linearity of the effective fields with current, the detection of the current range in which the thermal effects can be relevant, the appearance of misalignments artefacts when the symmetry relations of SOT are not fulfilled, and the conditions for the validity of the single domain approximations, which are not considered in switching current and second harmonic generation state-of-the-art experiments. We have studied the SOT induced antidam** and field-like torques in Ta/Co/Pt asymmetric stacks with perpendicular magnetic anisotropy. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Experimental evidence of spin-orbit torque from metallic interfaces

Authors: A. Anadón, R. Guerrero, J. A. Jover-Galtier, A. Gudín, J. M. Díez, P. Olleros-Rodríguez, R. Miranda, J. Camarero, P. Perna

Abstract: Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer i… ▽ More Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion model that provides information on the expected spin currents and spin accumulations in the system. The results demonstrate that the major responsible of both effects is spin memory loss at the interface. The enhancement of the spin-orbit torque when introducing an interlayer opens the possibility to design more effient spintronic devices based on materials that are cheap and abundant such as copper. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Comments: 12 pages, 5 figures

Journal ref: ACS Appl. Nano Mater. 2021, 4, 1, 487-492

Thermally Activated Processes for Ferromagnet Intercalation in Graphene-Heavy Metal Interfaces

Authors: F. Ajejas, A. Anadón, A. Gudin, J. M. Diez, C. G. Ayani, P. Olleros, L. de Melo Costa, C. Navío, A. Gutierrez, F. Calleja, A. L. Vázquez de Parga, R. Miranda, J. Camarero, P. Perna

Abstract: The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by in… ▽ More The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we achieve a nanoscale control of thermal activated intercalation of homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited in turn onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters, and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in-situ high quality Gr-FM/HM heterostructures enabling the realization of novel spin-orbitronic devices that exploits the extraordinary properties of Gr. △ Less

Submitted 19 November, 2019; v1 submitted 18 November, 2019; originally announced November 2019.

Comments: 13 pages, 6 figures

Journal ref: ACS Appl. Mater. Interfaces 2019

Interface-induced anomalous Nernst effect in Fe3O4/Pt-based heterostructures

Authors: R. Ramos, T. Kikkawa, A. Anadón, I. Lucas, T. Niizeki, K. Uchida, P. A. Algarabel, L. Morellón, M. H. Aguirre, M. R. Ibarra, E. Saitoh

Abstract: We have studied the anomalous Nernst effect (ANE) in [Fe3O4/Pt]-based heterostructures, by measuring the ANE-induced electric field with a magnetic field applied normal to the sample surface, in the perpendicular magnetized configuration, where only the ANE is expected. An ANE voltage is observed for [Fe3O4/Pt]n multilayers, and we further investigated its origin by performing measurements in [Fe3… ▽ More We have studied the anomalous Nernst effect (ANE) in [Fe3O4/Pt]-based heterostructures, by measuring the ANE-induced electric field with a magnetic field applied normal to the sample surface, in the perpendicular magnetized configuration, where only the ANE is expected. An ANE voltage is observed for [Fe3O4/Pt]n multilayers, and we further investigated its origin by performing measurements in [Fe3O4/Pt/Fe3O4] trilayers as a function of the Pt thickness. Our results suggest the presence of an interface-induced ANE. Despite of this ANE, the spin Seebeck effect is the dominant mechanism for the transverse thermoelectric voltage in the in-plane magnetized configuration, accounting for about 70 % of the measured voltage in the multilayers. △ Less

Submitted 28 September, 2018; originally announced September 2018.

Comments: 15 pages, 4 figures

Terahertz spin currents and inverse spin Hall effect in thin-film heterostructures containing complex magnetic compounds

Authors: T. Seifert, U. Martens, S. Günther, M. A. W. Schoen, F. Radu, X. Z. Chen, I. Lucas, R. Ramos, M. H. Aguirre, P. A. Algarabel, A. Anadón, H. Körner, J. Walowski, C. Back, M. R. Ibarra, L. Morellón, E. Saitoh, M. Wolf, C. Song, K. Uchida, M. Münzenberg, I. Radu, T. Kampfrath

Abstract: Terahertz emission spectroscopy of ultrathin multilayers of magnetic and heavy metals has recently attracted much interest. This method not only provides fundamental insights into photoinduced spin transport and spin-orbit interaction at highest frequencies but has also paved the way to applications such as efficient and ultrabroadband emitters of terahertz electromagnetic radiation. So far, predo… ▽ More Terahertz emission spectroscopy of ultrathin multilayers of magnetic and heavy metals has recently attracted much interest. This method not only provides fundamental insights into photoinduced spin transport and spin-orbit interaction at highest frequencies but has also paved the way to applications such as efficient and ultrabroadband emitters of terahertz electromagnetic radiation. So far, predominantly standard ferromagnetic materials have been exploited. Here, by introducing a suitable figure of merit, we systematically compare the strength of terahertz emission from X/Pt bilayers with X being a complex ferro-, ferri- and antiferromagnetic metal, that is, dysprosium cobalt (DyCo$_5$), gadolinium iron (Gd$_{24}$Fe$_{76}$), Magnetite (Fe$_3$O$_4$) and iron rhodium (FeRh). We find that the performance in terms of spin-current generation not only depends on the spin polarization of the magnet's conduction electrons but also on the specific interface conditions, thereby suggesting terahertz emission spectroscopy to be a highly surface-sensitive technique. In general, our results are relevant for all applications that rely on the optical generation of ultrafast spin currents in spintronic metallic multilayers. △ Less

Submitted 14 July, 2021; v1 submitted 31 May, 2017; originally announced May 2017.

Journal ref: SPIN, Volume 07, Issue 03, September 2017

Thermoelectric performance of spin Seebeck effect in Fe3O4/Pt-based thin film heterostructures

Authors: R. Ramos, A. Anadon, I. Lucas, K. Uchida, P. A. Algarabel, L. Morellon, M. H. Aguirre, E. Saitoh, M. R. Ibarra

Abstract: We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output… ▽ More We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance simultaneously, therefore resulting in significant power enhancement. This result demonstrates that the multilayer structures are useful for improving the thermoelectric performance of the spin Seebeck effect. △ Less

Submitted 12 May, 2016; originally announced May 2016.

Comments: This paper has been accepted in APL Materials, 15 pages, 4 figures

Journal ref: APL Mater. 4, 104802 (2016)

Observation of huge thermal spin currents in magnetic multilayers

Authors: R. Ramos, T. Kikkawa, M. H. Aguirre, I. Lucas, A. Anadón, T. Oyake, K. Uchida, H. Adachi, J. Shiomi, P. A. Algarabel, L. Morellón, S. Maekawa, E. Saitoh, M. R. Ibarra

Abstract: Thermal spin pum** constitutes a novel mechanism for generation of spin currents; however their weak intensity constitutes a major roadblock for its usefulness. We report a phenomenon that produces a huge spin current in the central region of a multilayer system, resulting in a giant spin Seebeck effect in a structure formed by repetition of ferromagnet/metal bilayers. The result is a consequenc… ▽ More Thermal spin pum** constitutes a novel mechanism for generation of spin currents; however their weak intensity constitutes a major roadblock for its usefulness. We report a phenomenon that produces a huge spin current in the central region of a multilayer system, resulting in a giant spin Seebeck effect in a structure formed by repetition of ferromagnet/metal bilayers. The result is a consequence of the interconversion of magnon and electron spin currents at the multiple interfaces. This work opens the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 92, 220407 (2015)