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Closed-Loop Electron-Beam-Induced Spectroscopy and Nanofabrication Around Individual Quantum Emitters
Authors:
Jawaher Almutlaq,
Kyle P. Kelley,
Hyeongrak Choi,
Linsen Li,
Benjamin Lawrie,
Ondrej Dyck,
Dirk Englund,
Stephen Jesse
Abstract:
Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometri…
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Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometries. While different out-coupling methods with near-unity efficiency exist, many have yet to be realized due to current limitations in nanofabrication methods, especially for mechanically hard materials like diamond. Here, we leverage electron-beam-induced etching to modify Sn-implanted diamond quantum microchiplets containing integrated waveguides with width and thickness of 280 nm and 200 nm, respectively. This approach allows for simultaneous high-resolution imaging and modification of the host matrix with an open geometry and direct writing. When coupled with the cathodoluminescence signal generated from the electron-emitter interactions, we can monitor the enhancement of the quantum emitters in real-time with nanoscale spatial resolution. The operando measurement and manipulation of single photon emitters demonstrated here provides a new foundation for the control of emitter-cavity interactions in integrated quantum photonics.
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Submitted 8 December, 2023;
originally announced December 2023.
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Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Authors:
Hyowon Moon,
Lukas Mennel,
Chitraleema Chakraborty,
Cheng Peng,
Jawaher Almutlaq,
Takashi Taniguchi,
Kenji Watanabe,
Dirk Englund
Abstract:
Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited…
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Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited optical spectroscopy nor lithography-limited electric control provides a proper tool to investigate these quasiparticles at the nanometer-scale at cryogenic temperature. Here, we introduce a cryogenic capacitive confocal optical microscope (C3OM) as a tool to study quasiparticle dynamics at the nanometer scale. Using a conductive atomic force microscope (AFM) tip as a gate electrode, we can modulate the electronic do** at the nanometer scale in WSe2 at 4K. This tool allows us to modulate with nanometer-scale confinement the exciton and trion peaks, as well a distinct photoluminescence line associated with a larger excitonic complex that exhibits distinctive nonlinear optical response. Our results demonstrate nanoscale confinement and spectroscopy of exciton complexes at arbitrary positions, which should prove an important tool for quantitative understanding of complex optoelectronic properties in semiconductors as well as for applications ranging from quantum spin liquids to superresolution measurements to control of quantum emitters.
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Submitted 30 November, 2023;
originally announced November 2023.
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Electrical Tuning of Neutral and Charged Excitons with 1-nm Gate
Authors:
Jawaher Almutlaq,
Jiangtao Wang,
Linsen Li,
Chao Li,
Tong Dang,
Vladimir Bulović,
**g Kong,
Dirk Englund
Abstract:
Electrical control of individual spins and photons in solids is key for quantum technologies, but scaling down to small, static systems remains challenging. Here, we demonstrate nanoscale electrical tuning of neutral and charged excitons in monolayer WSe2 using 1-nm carbon nanotube gates. Electrostatic simulations reveal a confinement radius below 15 nm, reaching the exciton Bohr radius limit for…
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Electrical control of individual spins and photons in solids is key for quantum technologies, but scaling down to small, static systems remains challenging. Here, we demonstrate nanoscale electrical tuning of neutral and charged excitons in monolayer WSe2 using 1-nm carbon nanotube gates. Electrostatic simulations reveal a confinement radius below 15 nm, reaching the exciton Bohr radius limit for few-layer dielectric spacing. In situ photoluminescence spectroscopy shows gate-controlled conversion between neutral excitons, negatively charged trions, and biexcitons at 4 K. Important for quantum information processing applications, our measurements indicate gating of a local 2D electron gas in the WSe2 layer, coupled to photons via trion transitions with binding energies exceeding 20 meV. The ability to deterministically tune and address quantum emitters using nanoscale gates provides a pathway towards large-scale quantum optoelectronic circuits and spin-photon interfaces for quantum networking.
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Submitted 30 October, 2023;
originally announced October 2023.
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Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope
Authors:
Ondrej Dyck,
Jawaher Almutlaq,
Jacob L. Swett,
Andrew R. Lupini,
Dirk Englund,
Stephen Jesse
Abstract:
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure devic…
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Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross section of an encapsulated WSe2 layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe2 cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.
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Submitted 1 December, 2022;
originally announced December 2022.
