Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Authors:
Thasneem Aliyar,
Hongyang Ma,
Radha Krishnan,
Gagandeep Singh,
Bi Qi Chong,
Yitao Wang,
Ivan Verzhbitskiy,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Ze Xiang Shen,
Teck Seng Koh,
Rajib Rahman,
Bent Weber
Abstract:
Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. S…
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Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic map** of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.
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Submitted 20 February, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
