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Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
Authors:
Michael E. Reimer,
Maarten P. van Kouwen,
Maria Barkelid,
Moira Hocevar,
Maarten. H. M. van Weert,
Rienk E. Algra,
Erik P. A. M. Bakkers,
Mikael T. Bjork,
Heinz Schmid,
Heike Riel,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical…
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We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
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Submitted 2 September, 2010;
originally announced September 2010.
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Disentangling the effects of spin-orbit and hyperfine interactions on spin blockade
Authors:
S. Nadj-Perge,
S. M. Frolov,
J. W. W. van Tilburg,
J. Danon,
Yu. V. Nazarov,
R. Algra,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet states. Partial lifting of spin blockade is explained by spin-orbit and hyperfine mechanisms that enable triplet to singlet transitions. The measurements over…
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We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet states. Partial lifting of spin blockade is explained by spin-orbit and hyperfine mechanisms that enable triplet to singlet transitions. The measurements over a wide range of interdot coupling and tunneling rates to the leads are well reproduced by a simple transport model. This allows us to separate and quantify the contributions of the spin-orbit and hyperfine interactions.
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Submitted 10 February, 2010; v1 submitted 10 February, 2010;
originally announced February 2010.
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Generic nano-imprint process for fabrication of nanowire arrays
Authors:
Aurelie Pierret,
Moira Hocevar,
Silke L. Diedenhofen,
Rienk E. Algra,
E. Vlieg,
Eugene C. Timmering,
Marc A. Verschuuren,
George W. G. Immink,
Marcel A. Verheijen,
Erik P. A. M. Bakkers
Abstract:
A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha so…
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A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
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Submitted 11 November, 2009;
originally announced November 2009.
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Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
Authors:
V. Favre-Nicolin,
F. Mastropietro,
J. Eymery,
D. Camacho,
Y. M. Niquet,
B. M. Borg,
M. E. Messing,
L. -E. Wernersson,
R. E. Algra,
E. P. A. M. Bakkers,
T. H. Metzger,
R Harder,
I. K. Robinson
Abstract:
Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, fo…
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Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation.
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Submitted 21 January, 2010; v1 submitted 28 October, 2009;
originally announced October 2009.
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Polarization Properties of Single Quantum Dots in Nanowires
Authors:
M. H. M. van Weert,
N. Akopian,
F. Kelkensberg,
U. Perinetti,
M. P. van Kouwen,
J. Gómez Rivas,
M. T. Borgström,
R. E. Algra,
M. A. Verheijen,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
V. Zwiller
Abstract:
We study the absorption and emission polarization of single semiconductor quantum dots in semiconductor nanowires. We show that the polarization of light absorbed or emitted by a nanowire quantum dot strongly depends on the orientation of the nanowire with respect to the directions along which light is incident or emitted. Light is preferentially linearly polarized when directed perpendicular to…
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We study the absorption and emission polarization of single semiconductor quantum dots in semiconductor nanowires. We show that the polarization of light absorbed or emitted by a nanowire quantum dot strongly depends on the orientation of the nanowire with respect to the directions along which light is incident or emitted. Light is preferentially linearly polarized when directed perpendicular to the nanowire elongation. In contrast, the degree of linear polarization is low for light directed along the nanowire. This result is vital for photonic applications based on intrinsic properties of quantum dots, such as generation of entangled photons. As an example, we demonstrate optical access to the spin states of a single nanowire quantum dot.
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Submitted 21 August, 2008;
originally announced August 2008.
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Twinning superlattices in indium phosphide nanowires
Authors:
Rienk Algra,
Marcel Verheijen,
Magnus Borgstrom,
Lou-Fe Feiner,
George Immink,
Willem van Enckevort,
Elias Vlieg,
Erik Bakkers
Abstract:
Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to crystallise in the zinc blende, instead of the commonly found wurtzite crystal structure. More importantly, we demonstrate that we can, by contr…
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Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to crystallise in the zinc blende, instead of the commonly found wurtzite crystal structure. More importantly, we demonstrate that we can, by controlling the crystal structure, induce twinning superlattices with long-range order in InP nanowires. We can tune the spacing of the superlattices by the wire diameter and the zinc concentration and present a model based on the cross-sectional shape of the zinc-blende InP nanowires to quantitatively explain the formation of the periodic twinning.
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Submitted 9 July, 2008;
originally announced July 2008.
