Showing 1–4 of 4 results for author: Alfieri, A

Self-Hybridized Exciton-Polariton Photovoltaics

Authors: Adam D. Alfieri, Tobia Ruth, Cheryl Lim, Jason Lynch, Deep Jariwala

Abstract: Excitonic semiconductors are attractive for next-generation photovoltaics (PVs) with lower cost, lighter weight, and lower material consumption than conventional technologies. Among them, transition metal dichalcogenide materials like WS2 are especially interesting due to exceptionally strong light-matter interaction. Photocurrent generation in excitonic PVs relies on exciton diffusion to heteroin… ▽ More Excitonic semiconductors are attractive for next-generation photovoltaics (PVs) with lower cost, lighter weight, and lower material consumption than conventional technologies. Among them, transition metal dichalcogenide materials like WS2 are especially interesting due to exceptionally strong light-matter interaction. Photocurrent generation in excitonic PVs relies on exciton diffusion to heterointerfaces. However, efficiencies of excitonic PVs are often limited by short exciton diffusion lengths. Here we report that the strong coupling of excitons to cavity photons in a WS2 absorber layer can enhance the external quantum efficiency by a factor of >10, internal quantum efficiency by a factor of ~3, and power conversion efficiency of excitonic PVs by an order of magnitude. The resulting hybrid states, exciton-polaritons, enhance the resonant absorption and exciton transport while the use of the WS2 layer as its own optical cavity enables broadband absorption. Thickness dependent device characterization reveals anomalous internal quantum efficiency and fill factor behavior that are attributed to novel exciton-polariton transport. Exciton-polariton enhanced transport occurs for both resonant and off-resonant excitation, emphasizing the value and practicality of the self-hybridized device structure. Our work presents a route towards excitonic PVs with broadband absorption and improved exciton transport without strict requirements of donor/acceptor structure of other excitonic PVs. △ Less

Submitted 18 June, 2024; originally announced June 2024.

Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal

Authors: Adam D. Alfieri, Michael J. Motala, Michael Snure, Jason Lynch, Pawan Kumar, Huiqin Zhang, Susanna Post, Christopher Muratore, Joshua R. Hendrickson, Nicholas R. Glavin, Deep Jariwala

Abstract: Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broa… ▽ More Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broadband metasurface superabsorber based on large area, semimetallic, van der Waals PtSe2 thin films in agreement with electromagnetic simulations. Our results show that PtSe2 is an ultrathin and scalable semimetal that concurrently possesses high index and high extinction across the vis-NIR range. Consequently, the thin-film PtSe2 on a reflector separated by a dielectric spacer can absorb > 85 % for the unpatterned case and ~97 % for the optimized 2D metasurface in the 400-900 nm range making it one of the strongest and thinnest broadband perfect absorbers to date. Our results present a scalable approach to photodetection and solar energy harvesting, demonstrating the practical utility of high index, high extinction semimetals for nanoscale optics. △ Less

Submitted 28 August, 2022; originally announced August 2022.

Nanomaterials for Quantum Information Science and Engineering

Authors: Adam Alfieri, Surendra B. Anantharaman, Huiqin Zhang, Deep Jariwala

Abstract: Quantum information science and engineering (QISE) which entails use of quantum mechanical states for information processing, communications, and sensing and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk materials as their… ▽ More Quantum information science and engineering (QISE) which entails use of quantum mechanical states for information processing, communications, and sensing and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. In this review, we consider how nanomaterials (i.e. materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next generation quantum devices for scalable and practical quantum applications. △ Less

Submitted 7 February, 2022; originally announced February 2022.

Comments: Review article. To appear in Advanced Materials

Scalable synthesis of 2D van der Waals superlattices

Authors: Michael J. Motala, Xiang Zhang, Pawan Kumar, Eliezer F. Oliveira, Anna Benton, Paige Miesle, Rahul Rao, Peter R. Stevenson, David Moore, Adam Alfieri, Jason Lynch, Guanhui Gao, Sijie Ma, Hanyu Zhu, Zhe Wang, Ivan Petrov, Eric A. Stach, W. Joshua Kennedy, Shiva Vengala, James M. Tour, Douglas S. Galvao, Deep Jariwala, Christopher Muratore, Michael Snure, Pulickel M. Ajayan , et al. (1 additional authors not shown)

Abstract: Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate… ▽ More Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition. △ Less

Submitted 4 November, 2021; originally announced November 2021.