Showing 1–17 of 17 results for author: Alexeev, E M

Nature of long-lived moiré interlayer excitons in electrically tunable MoS$_{2}$/MoSe$_{2}$ heterobilayers

Authors: Evgeny M. Alexeev, Carola M. Purser, Carmem M. Gilardoni, James Kerfoot, Hao Chen, Alisson R. Cadore, Bárbara L. T. Rosa, Matthew S. G. Feuer, Evans Javary, Patrick Hays, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Dhiren M. Kara, Mete Atatüre, Andrea C. Ferrari

Abstract: Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-spa… ▽ More Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-space configurations. Here, we show that interlayer excitons in MoS$_{2}$/MoSe$_{2}$ heterobilayers are formed by charge carriers residing at the Brillouin zone edges, with negligible interlayer hybridization. We find that the moiré superlattice leads to the reversal of the valley-dependent optical selection rules, yielding a positively valued g-factor and cross-polarized photoluminescence. Time-resolved photoluminescence measurements reveal that the interlayer exciton population retains the optically induced valley polarization throughout its microsecond-long lifetime. The combination of long optical lifetime and valley polarization retention makes MoS$_{2}$/MoSe$_{2}$ heterobilayers a promising platform for studying fundamental bosonic interactions and develo** excitonic circuits for optical information processing. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Electromechanical response of saddle points in twisted hBN moiré superlattices

Authors: Stefano Chiodini, Giacomo Venturi, James Kerfoot, **can Zhang, Evgeny M. Alexeev, Takashi Taniguchi, Kenji Watanabe, Andrea C. Ferrari, Antonio Ambrosio

Abstract: In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental inve… ▽ More In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental investigation of these features is still lacking. Here, we use piezo force microscopy to probe the electromechanical behavior of twisted hexagonal boron nitride (t-hBN). For a parallel stacking alignment of t-hBN, we reveal very narrow (width ~ 20 nm) saddle point polarizations, which we also measure in the anti-parallel configuration. These localized polarizations can still be found on a multiply-stacked t-hBN structure, determining the formation of a double moiré. We also visualize a t-hBN moiré superlattice in the topography maps with atomic force microscopy, related to the strain accumulated at the saddle point domains. Our findings imply that polarizations in t-hBN do not only point in the out-of-plane direction, but also show an in-plane component, giving rise to a much more complex 3D polarization field. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers

Authors: Alessandro Catanzaro, Armando Genco, Charalambos Louca, David A. Ruiz-Tijerina, Daniel J. Gillard, Luca Sortino, Aleksey Kozikov, Evgeny M. Alexeev, Riccardo Pisoni, Lee Hague, Kenji Watanabe, Takashi Taniguchi, Klauss Ensslin, Kostya S. Novoselov, Vladimir Fal'ko, Alexander I. Tartakovskii

Abstract: Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M… ▽ More Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: Supporting Information can be found downloading and extracting the gzipped tar source file listed under "Other formats"

Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure

Authors: Xinghan Guo, Alexander M. Stramma, Zixi Li, William G. Roth, Benchen Huang, Yu **, Ryan A. Parker, Jesús Arjona Martínez, Noah Shofer, Cathryn P. Michaels, Carola P. Purser, Martin H. Appel, Evgeny M. Alexeev, Tianle Liu, Andrea C. Ferrari, David D. Awschalom, Nazar Delegan, Benjamin **ault, Giulia Galli, F. Joseph Heremans, Mete Atatüre, Alexander A. High

Abstract: Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and… ▽ More Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9) % gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) $μ$s at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies. △ Less

Submitted 6 October, 2023; v1 submitted 21 July, 2023; originally announced July 2023.

Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment

Authors: A. R. Cadore, B. L. T. Rosa, I. Paradisanos, S. Mignuzzi, D. De Fazio, E. M. Alexeev, J. E. Muench, G. Kakavelakis, S. M. Shinde, D. Yoon, S. Tongay, K. Watanabe, T. Taniguchi, E. Lidorikis, I. Goykhman, G. Soavi, A. C. Ferrari

Abstract: Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum… ▽ More Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs △ Less

Submitted 2 May, 2023; originally announced May 2023.

Identification of exciton complexes in a charge-tuneable Janus WSeS monolayer

Authors: Matthew S. G. Feuer, Alejandro R. -P. Montblanch, Mohammed Sayyad, Carola M. Purser, Ying Qin, Evgeny M. Alexeev, Alisson R. Cadore, Barbara L. T. Rosa, James Kerfoot, Elaheh Mostaani, Radosław Kalęba, Pranvera Kolari, Jan Kopaczek, Kenji Watanabe, Takashi Taniguchi, Andrea C. Ferrari, Dhiren M. Kara, Sefaattin Tongay, Mete Atatüre

Abstract: Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photolumine… ▽ More Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>15 meV) spectra obfuscating their excitonic origin. Here, we identify the neutral, and negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayer with $\sim 6$ meV optical linewidth. We combine a recently developed synthesis technique, with the integration of Janus monolayers into vertical heterostructures, allowing do** control. Further, magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. This work provides the foundation for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and photo-voltaic energy harvesting, which requires efficient creation of long-lived excitons and integration into vertical heterostructures. △ Less

Submitted 13 October, 2022; originally announced October 2022.

Quantum control of the tin-vacancy spin qubit in diamond

Authors: Romain Debroux, Cathryn P. Michaels, Carola M. Purser, Noel Wan, Matthew E. Trusheim, Jesús Arjona Martínez, Ryan A. Parker, Alexander M. Stramma, Kevin C. Chen, Lorenzo de Santis, Evgeny M. Alexeev, Andrea C. Ferrari, Dirk Englund, Dorian A. Gangloff, Mete Atatüre

Abstract: Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent cont… ▽ More Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent control of the SnV spin qubit via an all-optical stimulated Raman drive between the ground and excited states. We use coherent population trap** and optically driven electronic spin resonance to confirm coherent access to the qubit at 1.7 K, and obtain spin Rabi oscillations at a rate of $Ω/2π$=3.6(1) MHz. All-optical Ramsey interferometry reveals a spin dephasing time of $T_2^*$=1.3(3)$μ$s and two-pulse dynamical decoupling already extends the spin coherence time to $T_2$=0.33(14) ms. Combined with transform-limited photons and integration into photonic nanostructures, our results make the SnV a competitive spin-photon building block for quantum networks. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Efficient phonon cascades in hot photoluminescence of WSe$_2$ monolayers

Authors: Ioannis Paradisanos, Gang Wang, Evgeny M. Alexeev, Alisson R. Cadore, Xavier Marie, Andrea C. Ferrari, Mikhail M. Glazov, Bernhard Urbaszek

Abstract: Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemmi… ▽ More Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemming from energy states higher than the A-exciton state, in addition to sharp, non-periodic Raman lines related to the phonon modes. We find a period $\sim$15meV for peaks both below (Stokes) and above (anti-Stokes) the laser excitation energy. We detect 7 maxima from 78K to room temperature in the Stokes signal and 5 in the anti-Stokes, of increasing intensity with temperature. We assign these to phonon cascades, whereby carriers undergo phonon-induced transitions between real states in the free-carrier gap with a probability of radiative recombination at each step. We infer that intermediate states in the conduction band at the $Λ$-valley of the Brillouin zone participate in the cascade process of 1L-WSe$_2$. The observations explain the primary stages of carrier relaxation, not accessible so far in time-resolved experiments. This is important for optoelectronic applications, such as photodetectors and lasers, because these determine the recovery rate and, as a consequence, the devices' speed and efficiency. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: 13 pages, 10 figures

Journal ref: Nature Communications, volume 12, Article number: 538 (2021)

Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers

Authors: V. Kravtsov, A. D. Liubomirov, R. V. Cherbunin, A. Catanzaro, A. Genco, D. Gillard, E. M. Alexeev, T. Ivanova, E. Khestanova, I. A. Shelykh, I. V. Iorsh, A. I. Tartakovskii, M. S. Skolnick, D. N. Krizhanovskii

Abstract: Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with di… ▽ More Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with different band structures engineered via the use of alloyed monolayer semiconductors. Through a combination of time-resolved Kerr rotation spectroscopic measurements and theoretical modelling for Mo$_{1-x}$W$_{x}$Se$_2$/WSe$_2$ samples with different chemical compositions and stacking angles, we uncover the roles of interlayer exciton recombination and charge carrier spin depolarization in the overall valley dynamics. Our results provide insights into the microscopic spin--valley polarization mechanisms in van der Waals heterostructures for the development of future 2D valleytronic devices. △ Less

Submitted 7 July, 2020; v1 submitted 27 May, 2020; originally announced May 2020.

Confinement of long-lived interlayer excitons in WS$_2$/WSe$_2$ heterostructures

Authors: Alejandro R. -P. Montblanch, Dhiren M. Kara, Ioannis Paradisanos, Carola M. Purser, Matthew S. G. Feuer, Evgeny M. Alexeev, Lucio Stefan, Ying Qin, Mark Blei, Gang Wang, Alisson R. Cadore, Pawel Latawiec, Marko Lončar, Sefaattin Tongay, Andrea C. Ferrari, Mete Atatüre

Abstract: Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a str… ▽ More Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a strongly confining trap array using a WS$_{2}$/WSe$_{2}$ heterostructure on a nanopatterned substrate. We detect long-lived interlayer excitons with lifetime approaching 0.2 ms and show that their confinement results in a reduced lifetime in the microsecond range and stronger emission rate with sustained optical selection rules. The combination of a permanent dipole moment, spatial confinement and long lifetime places interlayer excitons in a regime that satisfies one of the requirements for observing long-range dynamics in an optically resolvable trap lattice. △ Less

Submitted 5 May, 2020; originally announced May 2020.

Emergence of highly linearly polarized interlayer exciton emission in MoSe$_2$/WSe$_2$ heterobilayers with transfer-induced layer corrugation

Authors: Evgeny M. Alexeev, Nic Mullin, Pablo Ares, Harriet Nevison-Andrews, Oleksandr V. Skrypka, Tillmann Godde, Aleksey Kozikov, Lee Hague, Yibo Wang, Kostya S. Novoselov, Laura Fumagalli, Jamie K. Hobbs, Alexander I. Tartakovskii

Abstract: The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional mate… ▽ More The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering. △ Less

Submitted 12 April, 2020; originally announced April 2020.

Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging

Authors: T. Severs Millard, A. Genco, E. M. Alexeev, S. Randerson, S. Ahn, A. Jang, H. S. Shin, A. I. Tartakovskii

Abstract: CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to… ▽ More CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications. △ Less

Submitted 9 November, 2019; originally announced November 2019.

Comments: 32 pages including Supplementary Information, 6 figures

Journal ref: npj 2D Materials and Applications 4, Article number: 12 (2020)

Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures

Authors: Evgeny M. Alexeev, David A. Ruiz-Tijerina, Mark Danovich, Matthew J. Hamer, Daniel J. Terry, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Maciej R. Molas, Maciej Koperski, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Roman V. Gorbachev, Hyeon Suk Shin, Vladimir I. Fal'ko, Alexander I. Tartakovskii

Abstract: Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu… ▽ More Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 43 pages, 14 figures, includes supplementary information

Journal ref: Nature 567, 81 (2019)

The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies

Authors: A. Tomadin, S. M. Hornett, H. I. Wang, E. M. Alexeev, A. Candini, C. Coletti, D. Turchinovich, M. Klaeui, M. Bonn, F. H. L. Koppens, E. Hendry, M. Polini, K. J. Tielrooij

Abstract: For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have be… ▽ More For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have been put forward concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy. Here, we present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump - terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy ($E_{\rm F} \lesssim$ 0.1 eV for our experiments) broadening of the carrier distribution involves interband transitions - interband heating. At higher Fermi energy ($E_{\rm F} \gtrsim$ 0.15 eV) broadening of the carrier distribution involves intraband transitions - intraband heating. Under certain conditions, additional electron-hole pairs can be created (carrier multiplication) for low $E_{\rm F}$, and hot carriers (hot-carrier multiplication) for higher $E_{\rm F}$. The resultant photoconductivity is positive (negative) for low (high) $E_{\rm F}$, which originates from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications. △ Less

Submitted 7 December, 2017; originally announced December 2017.

Journal ref: Sci. Adv. 4, eaar5313 (2018)

Resonantly excited exciton dynamics in two-dimensional MoSe$_2$ monolayers

Authors: L. Scarpelli, F. Masia, E. M. Alexeev, F. Withers, A. I. Tartakovskii, K. S. Novoselov, W. Langbein

Abstract: We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model the data. We provide a consistent interpretation w… ▽ More We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model the data. We provide a consistent interpretation within the intrinsic band structure, not requiring the inclusion of extrinsic effects. We find an exciton radiative lifetime in the sub-picosecond range consistent to what has been recently reported. After the dominating radiative decay, the remaining exciton density, which has been scattered from the initially excited bright radiative state into dark states of different nature by exciton-phonon scattering or disorder scattering, shows a slower dynamics, covering 10ps to 10ns timescales. This includes direct bright transitions with larger in-plane momentum, as well as indirect dark transitions to indirect dark states. We find that exciton-exciton annihilation is not relevant in the observed dynamics, in variance from previous finding under non-resonant excitation. The trion density at 77K reveals a decay of the order of 1ps, similar to what is observed for the exciton. After few tens of picoseconds, the trion dynamics resembles the one of the exciton, indicating that trion ionization occurs on this timescale. △ Less

Submitted 17 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 045407 (2017)

Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope

Authors: Evgeny M. Alexeev, Alessandro Catanzaro, Oleksandr V. Skrypka, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Kostya S. Novoselov, Hyeon Suk Shin, Alexander I. Tartakovskii

Abstract: Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for develo** a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influenc… ▽ More Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for develo** a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth. △ Less

Submitted 1 May, 2017; v1 submitted 23 December, 2016; originally announced December 2016.

Comments: 24 pages, 5 figures

Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization

Authors: D. Schmidt, T. Godde, J. Schmutzler, M. Aßmann, J. Debus, F. Withers, E. M. Alexeev, O. Del Pozo-Zamudio, O. V. Skrypka, K. S. Novoselov, M. Bayer, A. I. Tartakovskii

Abstract: We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also… ▽ More We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also reveal the transition to delocalized exciton complexes at higher temperatures where the exciton and trion thermal energy exceeds the typical localization energy. This is accompanied with strong changes in PL including suppression of the trion PL and decrease of the trion PL life-time, as well as significant changes for neutral excitons in the temperature dependence of the PL intensity and appearance of a pronounced slow PL decay component. In MoSe2 and WSe2 studied here, the temperatures where such strong changes occur are observed at around 100 and 200 K, respectively, in agreement with their inhomogeneous PL linewidth of 8 and 20 meV at T~10K. The observed behavior is a result of a complex interplay between influences of the specific energy ordering of bright and dark excitons in MoSe2 and WSe2, sample do**, trion and exciton localization and various temperature-dependent non-radiative processes. △ Less

Submitted 13 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 165301 (2016)