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Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics
Authors:
Jarla Thiesbrummel,
Francisco Peña-Camargo,
Kai Oliver Brinkmann,
Emilio Gutierrez-Partida,
Fengjiu Yang,
Jonathan Warby,
Steve Albrecht,
Dieter Neher,
Thomas Riedl,
Henry J. Snaith,
Martin Stolterfoht,
Felix Lang
Abstract:
All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will ac…
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All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will accelerate advancement. Here, we perform extensive selective characterization of the individual sub-cells to disentangle the different losses and limiting factors in these tandem devices. We find that non-radiative losses in the high-gap subcell dominate the overall recombination losses in our baseline system as well as in the majority of literature reports. We consecutively improve the high-gap perovskite subcell through a multi-faceted approach, allowing us to enhance the open-circuit voltage ($V_{OC}$) of the subcell by up to 120 mV. Due to the (quasi) lossless indium oxide interconnect which we employ for the first time in all-perovskite tandems, the $V_{OC}$ improvements achieved in the high-gap perovskites translate directly to improved all-perovskite tandem solar cells with a champion $V_{OC}$ of 2.00 V and a stabilized efficiency of 23.7%. The efficiency potential of our optimized all-perovskite tandems reaches 25.2% and 27.0% when determined from electro- and photo-luminescence respectively, indicating significant transport losses as well as imperfect energy-alignment between the perovskite and the transport layers in the experimental devices. Further improvements to 28.4% are possible considering the bulk quality of both absorbers measured using photo-luminescence on isolated perovskite layers. Our insights therefore not only show an optimization example but a generalizable evidence-based strategy for optimization utilizing optical sub-cell characterization.
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Submitted 20 July, 2022;
originally announced July 2022.
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Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells
Authors:
Aniela Czudek,
Katrin Hirselandt,
Lukas Kegelmann,
Amran Al-Ashouri,
Marko Jošt,
Weiwei Zuo,
Antonio Abate,
Lars Korte,
Steve Albrecht,
Janardan Dagar,
Eva L. Unger
Abstract:
Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the de…
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Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the device performance parameters, which are reliable only if extracted from current-voltage curves collected under steady-state conditions. We show that is possible to determine the shorter settling or delay time suitable to carry out J-V measurements under steady-state conditions by analysis of the transient device response around the MPP. This procedure proves to be more time-efficient than measurement J-V measurements at a variety of scan rates. Furthermore, the generic algorithm presented here can be implemented to assess changes in the dynamic response of devices during long-term device ageing.
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Submitted 12 June, 2019;
originally announced June 2019.
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Transport signatures of quasiparticle poisoning in a Majorana island
Authors:
S. M. Albrecht,
E. B. Hansen,
A. P. Higginbotham,
F. Kuemmeth,
T. S. Jespersen,
J. Nygård,
P. Krogstrup,
J. Danon,
K. Flensberg,
C. M. Marcus
Abstract:
We investigate effects of quasiparticle poisoning in a Majorana island with strong tunnel coupling to normal-metal leads. In addition to the main Coulomb blockade diamonds, "shadow" diamonds appear, shifted by 1e in gate voltage, consistent with transport through an excited (poisoned) state of the island. Comparison to a simple model yields an estimate of parity lifetime for the strongly coupled i…
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We investigate effects of quasiparticle poisoning in a Majorana island with strong tunnel coupling to normal-metal leads. In addition to the main Coulomb blockade diamonds, "shadow" diamonds appear, shifted by 1e in gate voltage, consistent with transport through an excited (poisoned) state of the island. Comparison to a simple model yields an estimate of parity lifetime for the strongly coupled island (~ 1 μs) and sets a bound for a weakly coupled island (> 10 μs). Fluctuations in the gate-voltage spacing of Coulomb peaks at high field, reflecting Majorana hybridization, are enhanced by the reduced lever arm at strong coupling. In energy units, fluctuations are consistent with previous measurements.
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Submitted 17 December, 2016;
originally announced December 2016.
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Hybrid Double Quantum Dots: Normal, Superconducting, and Topological Regimes
Authors:
D. Sherman,
J. S. Yodh,
S. M. Albrecht,
J. Nygård,
P. Krogstrup,
C. M. Marcus
Abstract:
Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density. Here, we investigate double-quantum-dot devices made from InAs nanowires with a patterned epitaxial Al two-facet shell that proximitizes two gate-defined segments a…
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Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density. Here, we investigate double-quantum-dot devices made from InAs nanowires with a patterned epitaxial Al two-facet shell that proximitizes two gate-defined segments along the nanowire. We follow the evolution of mesoscopic superconductivity and charging energy in this system as a function of magnetic field and voltage-tuned barriers. Inter-dot coupling is varied from strong to weak using side gates, and the ground state is varied between normal, superconducting, and topological regimes by applying a magnetic field. We identify the topological transition by tracking the spacing between successive cotunneling peaks as a function of axial magnetic field and show that the individual dots host weakly hybridized Majorana modes.
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Submitted 6 May, 2016;
originally announced May 2016.
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Exponential Protection of Zero Modes in Majorana Islands
Authors:
S. M. Albrecht,
A. P. Higginbotham,
M. Madsen,
F. Kuemmeth,
T. S. Jespersen,
J. Nygård,
P. Krogstrup,
C. M. Marcus
Abstract:
Majorana zero modes are quasiparticle excitations in condensed matter systems that have been proposed as building blocks of fault-tolerant quantum computers [1]. They are expected to exhibit non-Abelian particle statistics, in contrast to the usual statistics of fermions and bosons, enabling quantum operations to be performed by braiding isolated modes around one another. Quantum braiding operatio…
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Majorana zero modes are quasiparticle excitations in condensed matter systems that have been proposed as building blocks of fault-tolerant quantum computers [1]. They are expected to exhibit non-Abelian particle statistics, in contrast to the usual statistics of fermions and bosons, enabling quantum operations to be performed by braiding isolated modes around one another. Quantum braiding operations are topologically protected insofar as these modes are pinned near zero energy, and the pinning is predicted to be exponential as the modes become spatially separated. Following theoretical proposals, several experiments have identified signatures of Majorana modes in proximitized nanowires and atomic chains, with small mode-splitting potentially explained by hybridization of Majoranas. Here, we use Coulomb-blockade spectroscopy in an InAs nanowire segment with epitaxial aluminum, which forms a proximity-induced superconducting Coulomb island (a Majorana island) that is isolated from normal-metal leads by tunnel barriers, to measure the splitting of near-zero-energy Majorana modes. We observe exponential suppression of energy splitting with increasing wire length. For short devices of a few hundred nanometers, sub-gap state energies oscillate as the magnetic field is varied, as is expected for hybridized Majorana modes. Splitting decreases by a factor of about ten for each half micrometer of increased wire length. For devices longer than about one micrometer, transport in strong magnetic fields occurs through a zero-energy state that is energetically isolated from a continuum, yielding uniformly spaced Coulomb-blockade conductance peaks, consistent with teleportation via Majorana modes. Our results help explain the trivial-to-topological transition in finite systems and to quantify the scaling of topological protection with end-mode separation.
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Submitted 10 March, 2016;
originally announced March 2016.
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InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
Authors:
M. Taupin,
E. Mannila,
P. Krogstrup,
V. F. Maisi,
H. Nguyen,
S. M. Albrecht,
J. Nygard,
C. M. Marcus,
J. P. Pekola
Abstract:
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms…
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We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and thus provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices, and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.
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Submitted 28 November, 2016; v1 submitted 6 January, 2016;
originally announced January 2016.
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Towards realistic implementations of a Majorana surface code
Authors:
L. A. Landau,
S. Plugge,
E. Sela,
A. Altland,
S. M. Albrecht,
R. Egger
Abstract:
Surface codes have emerged as promising candidates for quantum information processing. Building on the previous idea to realize the physical qubits of such systems in terms of Majorana bound states supported by topological semiconductor nanowires, we show that the basic code operations, namely projective stabilizer measurements and qubit manipulations, can be implemented by conventional tunnel con…
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Surface codes have emerged as promising candidates for quantum information processing. Building on the previous idea to realize the physical qubits of such systems in terms of Majorana bound states supported by topological semiconductor nanowires, we show that the basic code operations, namely projective stabilizer measurements and qubit manipulations, can be implemented by conventional tunnel conductance probes and charge pum** via single-electron transistors, respectively. The simplicity of the access scheme suggests that a functional code might be in close experimental reach.
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Submitted 27 January, 2016; v1 submitted 17 September, 2015;
originally announced September 2015.
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Parity lifetime of bound states in a proximitized semiconductor nanowire
Authors:
A. P. Higginbotham,
S. M. Albrecht,
G. Kirsanskas,
W. Chang,
F. Kuemmeth,
P. Krogstrup,
T. S. Jespersen,
J. Nygard,
K. Flensberg,
C. M. Marcus
Abstract:
Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are no…
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Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are now being intensely pursued in the context of topological superconductivity. To this end, we introduce a new physical system comprised of a gate-confined semiconductor nanowire with an epitaxially grown superconductor layer, yielding an isolated, proximitized nanowire segment. We identify Andreev-like bound states in the semiconductor via bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound state in the semiconductor exceeding 10 ms.
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Submitted 21 January, 2015;
originally announced January 2015.
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Hard gap in epitaxial semiconductor-superconductor nanowires
Authors:
W. Chang,
S. M. Albrecht,
T. S. Jespersen,
F. Kuemmeth,
P. Krogstrup,
J. Nygård,
C. M. Marcus
Abstract:
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are…
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Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.
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Submitted 24 January, 2015; v1 submitted 23 November, 2014;
originally announced November 2014.
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Epitaxy of Semiconductor-Superconductor nanowires
Authors:
P. Krogstrup,
N. L. B. Ziino,
W. Chang,
S. M. Albrecht,
M. H. Madsen,
E. Johnson,
J. Nygård,
C. M. Marcus,
T. S. Jespersen
Abstract:
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth…
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Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.
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Submitted 26 November, 2014; v1 submitted 23 November, 2014;
originally announced November 2014.
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Efficient out-coupling of high-purity single photons from a coherent quantum dot in a photonic-crystal cavity
Authors:
K. H. Madsen,
S. Ates,
J. Liu,
A. Javadi,
S. M. Albrecht,
I. Yeo,
S. Stobbe,
P. Lodahl
Abstract:
We demonstrate a single-photon collection efficiency of $(44.3\pm2.1)\%$ from a quantum dot in a low-Q mode of a photonic-crystal cavity with a single-photon purity of $g^{(2)}(0)=(4\pm5)\%$ recorded above the saturation power. The high efficiency is directly confirmed by detecting up to $962\pm46$ kilocounts per second on a single-photon detector on another quantum dot coupled to the cavity mode.…
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We demonstrate a single-photon collection efficiency of $(44.3\pm2.1)\%$ from a quantum dot in a low-Q mode of a photonic-crystal cavity with a single-photon purity of $g^{(2)}(0)=(4\pm5)\%$ recorded above the saturation power. The high efficiency is directly confirmed by detecting up to $962\pm46$ kilocounts per second on a single-photon detector on another quantum dot coupled to the cavity mode. The high collection efficiency is found to be broadband, as is explained by detailed numerical simulations. Cavity-enhanced efficient excitation of quantum dots is obtained through phonon-mediated excitation and under these conditions, single-photon indistinguishability measurements reveal long coherence times reaching $0.77\pm0.19$ ns in a weak-excitation regime. Our work demonstrates that photonic crystals provide a very promising platform for highly integrated generation of coherent single photons including the efficient out-coupling of the photons from the photonic chip.
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Submitted 2 October, 2014; v1 submitted 27 February, 2014;
originally announced February 2014.
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New two dimensional S=1/2 Heisenberg antiferromagnets: synthesis, structure and magnetic properties
Authors:
F. M. Woodward,
A. S. Albrecht,
C. M. Wynn,
C. P. Landee,
M. M. Turnbull
Abstract:
The magnetic susceptibility and magnetization of two new layered S=1/2 Heisenberg antiferromagnets with moderate exchange are reported. The two isostructural compounds, (2-amino-5-chloropyridinium)2CuBr4 ((5CAP)2CuBr4) and (2-amino-5-methylpyridinium)2CuBr4 ((5MAP)2CuBr4), contain S=1/2, Cu(II) ions related by C-centering, yielding four equivalent nearest neighbors. The crystal structure of newl…
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The magnetic susceptibility and magnetization of two new layered S=1/2 Heisenberg antiferromagnets with moderate exchange are reported. The two isostructural compounds, (2-amino-5-chloropyridinium)2CuBr4 ((5CAP)2CuBr4) and (2-amino-5-methylpyridinium)2CuBr4 ((5MAP)2CuBr4), contain S=1/2, Cu(II) ions related by C-centering, yielding four equivalent nearest neighbors. The crystal structure of newly synthesized compound, (5CAP)2CuBr4, shows the existence of layers of distorted copper(II)-bromide tetrahedra parallel to the ab plane, separated by the organic cations along the c axis. Magnetic pathways are available through the bromide-bromide contacts within the layers and provide for moderate antiferromagnetic exchange. Susceptibility measurements indicate interaction strengths to be 8.5(1) K, and 6.5(1) K and ordering temperatures of 5.1(2) K and 3.8(2) K for (5CAP)2CuBr4 and (5MAP)2CuBr4 respectively. High field magnetization experiments on both compounds show upward curvature of M(H,T). Magnetization measurements made at T = 1.3 K show saturation occurs in (5MAP)2CuBr4 at 18.8 T and in (5CAP)2CuBr4 at 24.1 T. The magnetization curves are consistent with recent theoretical predictions. Single crystal magnetization measured at 2.0 K indicate a spin flop transition at 0.38 T and 0.63 T for (5CAP)2CuBr4 and (5MAP)2CuBr4 respectively.
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Submitted 20 November, 2001; v1 submitted 23 July, 2001;
originally announced July 2001.
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Ab initio calculations of response properties including electron-hole interaction
Authors:
Valerio Olevano,
Stefan Albrecht,
Lucia Reining
Abstract:
We discuss the current status of a computational approach which allows to evaluate the dielectric matrix, and hence electronic excitations like optical properties, including local field and excitonic effects. We introduce a recent numerical development which greatly reduces the use of memory in such type of calculations, and hence eliminates one of the bottlenecks for the application to complex…
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We discuss the current status of a computational approach which allows to evaluate the dielectric matrix, and hence electronic excitations like optical properties, including local field and excitonic effects. We introduce a recent numerical development which greatly reduces the use of memory in such type of calculations, and hence eliminates one of the bottlenecks for the application to complex systems. We present recent applications of the method, focusing our interest on insulating oxides.
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Submitted 13 October, 2000;
originally announced October 2000.
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Ab initio calculation of excitonic effects in the optical spectra of semiconductors
Authors:
Stefan Albrecht,
Lucia Reining,
Rodolfo Del Sole,
Giovanni Onida
Abstract:
An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle bandstructure calculation and is based on the relevant Bethe--Salpeter equation.
An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental s…
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An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle bandstructure calculation and is based on the relevant Bethe--Salpeter equation.
An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and lineshape.
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Submitted 16 March, 1998;
originally announced March 1998.