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A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs
Authors:
Ashwin Tunga,
Kexin Li,
Nicholas C. Miller,
Matt Grupen,
John D. Albrecht,
Shaloo Rakheja
Abstract:
Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from Synopsys. The electron transport and heat flow equations of the respective solvers are described in detail. The differences in the description of electron flux a…
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Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from Synopsys. The electron transport and heat flow equations of the respective solvers are described in detail. The differences in the description of electron flux and the discretization methods are highlighted. Next, the transport models are applied to the same simulated device structure using identical meshes, boundary conditions, and material parameters. Static simulations show the numerical convergence of Fermi kinetics to be consistently quadratic or faster, whereas the hydrodynamic model is often sub-quadratic. Further comparisons of large signal transient simulations reveal the hydrodynamic model produces certain anomalous electron ensemble behaviors within the transistor structure. The fundamentally different electron dynamics produced by the two models suggest an underlying cause for their different numerical convergence characteristics.
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Submitted 6 August, 2022;
originally announced August 2022.
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Transmission x-ray microscopy at low temperatures - analyzing supercurrents with high spatial resolution
Authors:
J. Simmendinger,
S. Ruoss,
C. Stahl,
M. Weigand,
J. Gräfe,
G. Schütz,
J. Albrecht
Abstract:
Scanning transmission x-ray microscopy has been used to image electric currents in superconducting films at temperatures down to 20 K. The magnetic stray field of supercurrents in a thin YBaCuO film is mapped into a soft-magnetic coating of permalloy. The so created local magnetization of the ferromagnetic film can be detected by dichroic absorption of polarized x-rays. To enable high-quality meas…
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Scanning transmission x-ray microscopy has been used to image electric currents in superconducting films at temperatures down to 20 K. The magnetic stray field of supercurrents in a thin YBaCuO film is mapped into a soft-magnetic coating of permalloy. The so created local magnetization of the ferromagnetic film can be detected by dichroic absorption of polarized x-rays. To enable high-quality measurements in transmission geometry the whole heterostructure of ferromagnet, superconductor and single-crystalline substrate has been thinned to an overall thickness of less than 1 micron. With this novel technique local supercurrents can be analyzed in a wide range of temperatures and magnetic fields. A magnetic resolution of less than 100nm together with simultaneously obtained nanostructural data allow the correlation of local supercurrents with the micro- and nanostructure of the superconducting film.
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Submitted 28 November, 2017;
originally announced November 2017.
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The temperature-dependent magnetization profile across an epitaxial bilayer of ferromagnetic La2/3Ca1/3MnO3 and superconducting YBa2Cu3O7-d
Authors:
S. Brück,
S. Treiber,
S. Macke,
P. Audehm,
G. Christiani,
S. Soltan,
H. -U. Habermeier,
E. Goering,
J. Albrecht
Abstract:
Epitaxial bilayers of ferromagnetic La2/3Ca1/3MnO3 (LCMO) and superconducting YBa2Cu3O7-d (YBCO) have been grown on single-crystalline SrTiO3 (STO) substrates by pulsed laser deposition. The Manganese magnetization profile across the FM layer has been determined with high spatial resolution at low temperatures by X-ray resonant magnetic reflectivity (XRMR). It is found that not only the adjacent s…
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Epitaxial bilayers of ferromagnetic La2/3Ca1/3MnO3 (LCMO) and superconducting YBa2Cu3O7-d (YBCO) have been grown on single-crystalline SrTiO3 (STO) substrates by pulsed laser deposition. The Manganese magnetization profile across the FM layer has been determined with high spatial resolution at low temperatures by X-ray resonant magnetic reflectivity (XRMR). It is found that not only the adjacent superconductor but also the substrate underneath influences the magnetization of the LCMO film at the interfaces at low temperatures. Both effects can be investigated individually by XRMR.
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Submitted 8 September, 2010;
originally announced September 2010.
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Superconducting phase formation in random neck syntheses: a study of the Y-Ba-Cu-O system by magneto-optics and magnetometry
Authors:
J. B. Willems,
J. Albrecht,
I. L. Landau,
J. Hulliger
Abstract:
Magneto-optical imaging and magnetization measurements were applied to investigate local formation of superconducting phase effected by a random neck synthesis in Y-Ba-Cu-O system. Polished pellets of strongly inhomogeneous ceramic samples show clearly the appearance of superconducting material in the intergrain zones of binary primary particles reacted under different conditions. Susceptibility…
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Magneto-optical imaging and magnetization measurements were applied to investigate local formation of superconducting phase effected by a random neck synthesis in Y-Ba-Cu-O system. Polished pellets of strongly inhomogeneous ceramic samples show clearly the appearance of superconducting material in the intergrain zones of binary primary particles reacted under different conditions. Susceptibility measurements allows evaluation of superconducting critical temperature, which turned out to be close to that of optimally doped YBCO.
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Submitted 30 May, 2008; v1 submitted 26 May, 2008;
originally announced May 2008.
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Universal temperature scaling of flux line pinning in high-temperature superconducting thin films
Authors:
J Albrecht,
M Djupmyr,
S Bruck
Abstract:
Dissipation-free current transport in high-temperature superconductors is one of the most crucial properties of this class of materials which is directly related to the effective inhibition of flux line movement by defect structures. In this respect epitaxially grown thin films of YBa2Cu3O7-d (YBCO) are proving to be the strongest candidates for many widescale applications that are close to real…
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Dissipation-free current transport in high-temperature superconductors is one of the most crucial properties of this class of materials which is directly related to the effective inhibition of flux line movement by defect structures. In this respect epitaxially grown thin films of YBa2Cu3O7-d (YBCO) are proving to be the strongest candidates for many widescale applications that are close to realization. We show that the relation between different defect structures and flux line pinning in these films exhibits universal features which are clearly displayed in a detailed analysis of the temperature-dependent behaviour of local critical currents. This allows us to identify different pinning mechanisms at different temperatures to be responsible for the found critical currents. Additionally, the presence of grain boundaries with very low misorientation angles affects the temperature stability of the critical currents which has important consequences for future applications.
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Submitted 17 April, 2007;
originally announced April 2007.
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Dramatic role of critical current anisotropy on flux avalanches in MgB2 films
Authors:
J. Albrecht,
A. T. Matveev,
J. Strempfer,
H. -U. Habermeier,
D. V. Shantsev,
Y. M. Galperin,
T. H. Johansen
Abstract:
Anisotropic penetration of magnetic flux in MgB2 films grown on vicinal sapphire substrates is investigated using magneto-optical imaging. Regular penetration above 10 K proceeds more easily along the substrate surface steps, anisotropy of the critical current being 6%. At lower temperatures the penetration occurs via abrupt dendritic avalanches that preferentially propagate {\em perpendicular}…
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Anisotropic penetration of magnetic flux in MgB2 films grown on vicinal sapphire substrates is investigated using magneto-optical imaging. Regular penetration above 10 K proceeds more easily along the substrate surface steps, anisotropy of the critical current being 6%. At lower temperatures the penetration occurs via abrupt dendritic avalanches that preferentially propagate {\em perpendicular} to the surface steps. This inverse anisotropy in the penetration pattern becomes dramatic very close to 10 K where all flux avalanches propagate in the strongest-pinning direction. The observed behavior is fully explained using a thermomagnetic model of the dendritic instability.
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Submitted 3 July, 2006;
originally announced July 2006.
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Spin-polarized quasiparticle injection effects in YBCO thin films
Authors:
S. Soltan,
J. Albrecht,
H. -U. Habermeier
Abstract:
We report detailed transport studies on ferromagnet-superconductor heterostructures. Epitaxial heterostructures of half-metal colossal magnetoresistive La2/3Ca1/3MnO3 (HM-CMR) and high Tc superconducting YBa2Cu3O7 (YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laser deposition. Using the HM--CMR layer as source for spin-polarized quasiparticles, we show the effect of inject…
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We report detailed transport studies on ferromagnet-superconductor heterostructures. Epitaxial heterostructures of half-metal colossal magnetoresistive La2/3Ca1/3MnO3 (HM-CMR) and high Tc superconducting YBa2Cu3O7 (YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laser deposition. Using the HM--CMR layer as source for spin-polarized quasiparticles, we show the effect of injection of spin-polarized quasiparticles into the ab-plane and along the c-axis of YBCO. The results show a drop in the ab-plane resistance Rab (T) in the case of injection along the c-axis that is discussed to be related to the opening of a pseudogap.
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Submitted 6 May, 2005;
originally announced May 2005.
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Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation
Authors:
S. Soltan,
J. Albrecht,
H. --U. Habermeier
Abstract:
We report detailed studies on ferromagnet--superconductor bilayer structures. Epitaxial bilayer structures of half metal--colossal magnetoresistive La$_{\mathrm{2/3}}$Ca$_{\mathrm{1/3}}$MnO$_{\mathrm{3}}$ (HM--CMR) and high--$T_{\mathrm{c}}$ superconducting YBa$_{\mathrm{2}}$Cu$_{\mathrm{3}}$O$_{\mathrm{7-δ}}$(HTSC) are grown on SrTiO$_3$ (100) single--crystalline substrates using pulsed laser d…
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We report detailed studies on ferromagnet--superconductor bilayer structures. Epitaxial bilayer structures of half metal--colossal magnetoresistive La$_{\mathrm{2/3}}$Ca$_{\mathrm{1/3}}$MnO$_{\mathrm{3}}$ (HM--CMR) and high--$T_{\mathrm{c}}$ superconducting YBa$_{\mathrm{2}}$Cu$_{\mathrm{3}}$O$_{\mathrm{7-δ}}$(HTSC) are grown on SrTiO$_3$ (100) single--crystalline substrates using pulsed laser deposition. Magnetization $M$(T) measurements show the coexistence of ferromagnetism and superconductivity in these structures at low temperatures. Using the HM--CMR layer as an electrode for spin polarized electrons, we discuss the role of spin polarized self injection into the HTSC layer. The experimental results are in good agreement with a presented theoretical estimation, where the spin diffusion length $ξ_{\mathrm {FM}}$ is found to be in the range of $ξ_{\mathrm{FM}} \approx$ 10 nm.
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Submitted 23 August, 2004;
originally announced August 2004.
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Enhancement of flux-line pinning in all-oxide superconductor/ferromagnet heterostructures
Authors:
H. -U. Habermeier,
J. Albrecht,
S. Soltan
Abstract:
We have studied the local critical current density, jc, in the superconductor thin film of bilayer structures consisting of YBa2Cu3O7 and the ferromagnets La2/3Ca1/3MnO3 and SrRuO3, respectively, by means of quantitative magneto-optics. A pronounced hysteresis of jc was observed which is ascribed to the magnetization state of the ferromagnetic layer. The results are discussed within the frame of…
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We have studied the local critical current density, jc, in the superconductor thin film of bilayer structures consisting of YBa2Cu3O7 and the ferromagnets La2/3Ca1/3MnO3 and SrRuO3, respectively, by means of quantitative magneto-optics. A pronounced hysteresis of jc was observed which is ascribed to the magnetization state of the ferromagnetic layer. The results are discussed within the frame of magnetic vortex - wall interactions.
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Submitted 5 January, 2004;
originally announced January 2004.
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Energy levels in polarization superlattices: a comparison of continuum strain models
Authors:
B. Jogai,
J. D. Albrecht,
E. Pan
Abstract:
A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and the subsequent effect on the energy levels. Two continuum strain models are contrasted. One is the standard strain model derived from Hooke's law that is typically used to calculate energy levels in polarization superl…
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A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and the subsequent effect on the energy levels. Two continuum strain models are contrasted. One is the standard strain model derived from Hooke's law that is typically used to calculate energy levels in polarization superlattices and quantum wells. The other is a fully-coupled strain model derived from the thermodynamic equation of state for piezoelectric materials. The latter is more complete and applicable to strongly piezoelectric materials where corrections to the standard model are significant. The underlying theory has been applied to AlGaN/GaN superlattices and quantum wells. It is found that the fully-coupled strain model yields very different electric fields from the standard model. The calculated intersubband transition energies are shifted by approximately 5 -- 19 meV, depending on the structure. Thus from a device standpoint, the effect of applying the fully-coupled model produces a very measurable shift in the peak wavelength. This result has implications for the design of AlGaN/GaN optical switches.
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Submitted 3 November, 2003;
originally announced November 2003.
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Electromechanical coupling in free-standing AlGaN/GaN planar structures
Authors:
B. Jogai,
J. D. Albrecht,
E. Pan
Abstract:
The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-for…
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The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-form analytic expressions that take into account the wurtzite crystal anisotropy. It is shown that in the absence of free charges, the calculated strain and electric fields are substantially differently from those obtained using the standard model without electromechanical coupling. It is also shown, however, that when a two-dimensional electron gas is present at the AlGaN/GaN interface, a condition that is the basis for heterojunction field-effect transistors, the electromechanical coupling is screened and the decoupled model is once again a good approximation. Specific cases of these calculations corresponding to transistor and superlattice structures are discussed.
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Submitted 12 June, 2003;
originally announced June 2003.
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The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors
Authors:
B. Jogai,
J. D. Albrecht,
E. Pan
Abstract:
The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fracti…
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The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fraction of 0.3. This result has consequences for the calculation of quantities that depend directly on the strain tensor. These quantities include the eigenstates and electrostatic potential in AlGaN/GaN heterostructures. It is shown that for an HFET, the electromechanical coupling is screened by the 2DEG. Results for the electromechanical model, including the 2DEG, indicate that the standard (decoupled) strain model is a reasonable approximation for HFET calculataions. The analytical results are supported by a self-consistent Schrödinger-Poisson calculation that includes the fully-coupled equation of state together with the charge-balance equation.
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Submitted 11 June, 2003;
originally announced June 2003.
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Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts
Authors:
J. D. Albrecht,
D. L. Smith
Abstract:
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four sce…
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We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a do** density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.
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Submitted 24 February, 2003;
originally announced February 2003.
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Electron Spin Injection at a Schottky Contact
Authors:
J. D. Albrecht,
D. L. Smith
Abstract:
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor do** density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interfa…
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We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor do** density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.
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Submitted 7 February, 2002;
originally announced February 2002.
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Influence of vortex-vortex interaction on critical currents across low-angle grain boundaries in YBa2Cu3O7-delta thin films
Authors:
J. Albrecht,
S. Leonhardt,
H. Kronmueller
Abstract:
Low-angle grain boundaries with misorientation angles theta < 5 degrees in optimally doped thin films of YBCO are investigated by magnetooptical imaging. By using a numerical inversion scheme of Biot-Savart's law the critical current density across the grain boundary can be determined with a spatial resolution of about 5 micrometers. Detailed investigation of the spatially resolved flux density…
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Low-angle grain boundaries with misorientation angles theta < 5 degrees in optimally doped thin films of YBCO are investigated by magnetooptical imaging. By using a numerical inversion scheme of Biot-Savart's law the critical current density across the grain boundary can be determined with a spatial resolution of about 5 micrometers. Detailed investigation of the spatially resolved flux density and current density data shows that the current density across the boundary varies with varying local flux density. Combining the corresponding flux and current pattern it is found that there exists a universal dependency of the grain boundary current on the local flux density. A change in the local flux density means a variation in the flux line-flux line distance. With this knowledge a model is developped that explains the flux-current relation by means of magnetic vortex-vortex interaction.
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Submitted 27 June, 2000;
originally announced June 2000.
