Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
Authors:
**gcheng Zhou,
Hanyi Lu,
Di Chen,
Mengqi Huang,
Gerald Q. Yan,
Faris Al-matouq,
Jiu Chang,
Dziga Djugba,
Zhigang Jiang,
Hailong Wang,
Chunhui Rita Du
Abstract:
Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$…
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Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$ spin defects contained in few-layer thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by $V_B^-$ spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and $V_B^-$ spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
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Submitted 1 May, 2024;
originally announced May 2024.
