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The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
K. J. Thomas,
F. Sfigakis,
P. See,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz…
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We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.
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Submitted 6 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
F. Sfigakis,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
A. R. Hamilton,
M. J. Kelly,
C. G. Smith
Abstract:
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that…
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Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.
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Submitted 1 June, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
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Multiplexed Charge-locking Device for Large Arrays of Quantum Devices
Authors:
R. K. Puddy,
L. W Smith,
H. Al-Taie,
C. H. Chong,
I. Farrer,
J. P. Griffiths,
D. A. Ritchie,
M. J. Kelly,
M. Pepper,
C. G. Smith
Abstract:
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divi…
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We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divide three or more ways at each branch. Secondly we describe a device architecture that utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate devices utilising these innovations on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.
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Submitted 21 August, 2014; v1 submitted 12 August, 2014;
originally announced August 2014.
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Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly
Authors:
L. W. Smith,
H. Al-Taie,
F. Sfigakis,
P. See,
A. A. J. Lesage,
B. Xu,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum…
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The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.
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Submitted 28 July, 2014;
originally announced July 2014.
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A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices
Authors:
H. Al-Taie,
L. W. Smith,
B. Xu,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the m…
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Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible.
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Submitted 22 July, 2014;
originally announced July 2014.
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Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices
Authors:
H. Al-Taie,
L. W. Smith,
B. Xu,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plate…
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We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.
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Submitted 18 June, 2013;
originally announced June 2013.
