Showing 1–50 of 58 results for author: Ajayan, P M

Non-thermal Magnetic Deicing Using Two-Dimensional Chromium Telluride

Authors: Chinmayee Chowde Gowda, Alexey Kartsev, Nishant Tiwari, Safronov A. A, Prafull Pandey, Ajit K. Roy, Pulickel M. Ajayan, Douglas S. Galvao, Chandra Sekhar Tiwary

Abstract: Two-dimensional (2D) chromium telluride Cr2Te3 exhibits strong ferromagnetic ordering with high coercivity at low temperatures and paramagnetic behaviour when approaching room temperature. The spin states of monolayer Cr2Te3 show ferromagnetic ordering in the ground state, and in-situ Raman analysis shows reversible structure transformation and hence a ferromagnetic to paramagnetic transition duri… ▽ More Two-dimensional (2D) chromium telluride Cr2Te3 exhibits strong ferromagnetic ordering with high coercivity at low temperatures and paramagnetic behaviour when approaching room temperature. The spin states of monolayer Cr2Te3 show ferromagnetic ordering in the ground state, and in-situ Raman analysis shows reversible structure transformation and hence a ferromagnetic to paramagnetic transition during low-temperature heating cycles (0 - 25 °C). The magnetic phase transition near room temperature in the 2D Cr2Te3 prompted the exploration of these layered materials for energy application. We demonstrate that the low-temperature ferromagnetic behavior can be used to magnetically deice material surfaces using an external magnetic source, avoiding the use of harsh chemicals and high temperatures. The hydrophobic nature and dipole interactions of H2O molecules with the surface of the 2D Cr2Te3 coating aid in the condensation of ice droplets formed on the surface. First-principles calculations also confirm the observed crystal structure, surface interaction, and magnetic properties of 2D Cr2Te3. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Anomalous properties of spark plasma sintered boron nitride solids

Authors: Abhijit Biswas, Peter Serles, Gustavo A. Alvarez, Jesse Schimpf, Michel Hache, Jonathan Kong, Pedro Guerra Demingos, Bo Yuan, Tymofii S. Pieshkov, Chenxi Li, Anand B. Puthirath, Bin Gao, Tia Gray, Xiang Zhang, Jishnu Murukeshan, Robert Vajtai, Pengcheng Dai, Chandra Veer Singh, Jane Howe, Yu Zou, Lane W. Martin, James Patrick Clancy, Zhiting Tian, Tobin Filleter, Pulickel M. Ajayan

Abstract: Hexagonal boron nitride (h-BN) is brittle, however, its atomic-scale structural engineering can lead to unprecedented physical properties. Here we report the bulk synthesis of high-density crystalline h-BN solids by using high-temperature spark plasma sintering (SPS) of micron size h-BN powders. In addition to the high mechanical strength and ductile response of such materials, we have obtained an… ▽ More Hexagonal boron nitride (h-BN) is brittle, however, its atomic-scale structural engineering can lead to unprecedented physical properties. Here we report the bulk synthesis of high-density crystalline h-BN solids by using high-temperature spark plasma sintering (SPS) of micron size h-BN powders. In addition to the high mechanical strength and ductile response of such materials, we have obtained anomalous values of dielectric constant beyond theoretical limits, high thermal conductivity, and exceptional neutron radiation shielding capability. Through exhaustive characterizations we reveal that SPS induces non-basal plane crystallinity, twisting of layers, and facilitates inter-grain fusion with a high degree of in-plane alignment across macroscale dimensions, resulting in near-theoretical density and anomalous properties. Our findings highlight the importance of material design, via new approaches such as twisting and interconnections between atomically thin layers, to create novel ceramics with properties that could go beyond their intrinsic theoretical predictions. △ Less

Submitted 10 July, 2024; v1 submitted 9 May, 2024; originally announced May 2024.

Comments: Authors revised version, 46 pages, 4 figures

Graphene Terahertz Devices for Sensing and Communication

Authors: Anna-Christina Samaha, Jacques Doumani, T. Elijah Kritzell, Hong**g Xu, Andrey Baydin, Pulickel M. Ajayan, Mario El Tahchi, Junichiro Kono

Abstract: Graphene-based terahertz (THz) devices have emerged as promising platforms for a variety of applications, leveraging graphene's unique optoelectronic properties. This review explores recent advancements in utilizing graphene in THz technology, focusing on two main aspects: THz molecular sensing and THz wave modulation. In molecular sensing, the environment-sensitive THz transmission and emission p… ▽ More Graphene-based terahertz (THz) devices have emerged as promising platforms for a variety of applications, leveraging graphene's unique optoelectronic properties. This review explores recent advancements in utilizing graphene in THz technology, focusing on two main aspects: THz molecular sensing and THz wave modulation. In molecular sensing, the environment-sensitive THz transmission and emission properties of graphene are utilized for enabling molecular adsorption detection and biomolecular sensing. This capability holds significant potential, from the detection of pesticides to DNA at high sensitivity and selectivity. In THz wave modulation, crucial for next-generation wireless communication systems, graphene demonstrates remarkable potential in absorption modulation when gated. Novel device structures, spectroscopic systems, and metasurface architectures have enabled enhanced absorption and wave modulation. Furthermore, techniques such as spatial phase modulation and polarization manipulation have been explored. From sensing to communication, graphene-based THz devices present a wide array of opportunities for future research and development. Finally, advancements in sensing techniques not only enhance biomolecular analysis but also contribute to optimizing graphene's properties for communication by enabling efficient modulation of electromagnetic waves. Conversely, developments in communication strategies inform and enhance sensing capabilities, establishing a mutually beneficial relationship. △ Less

Submitted 25 May, 2024; v1 submitted 17 February, 2024; originally announced February 2024.

From Pure Mathematics to Macroscale Applications: The Genesis of Schwarzites

Authors: Levi C. Felix, Rushikesh Ambekar, Raphael M. Tromer, Cristiano F. Woellner, Varlei Rodrigues, Pulickel M. Ajayan, Chandra S. Tiwary, Douglas S. Galvao

Abstract: Schwarzites are porous (spongy-like) carbon allotropes with negative Gaussian curvatures. They were proposed by Mackay and Terrones inspired by the works of the German mathematician Hermann Schwarz on Triply-Periodic Minimal Surfaces (TPMS). This review presents and discusses the history of schwarzites and their place among curved carbon nanomaterials. We summarized the main works on schwarzites a… ▽ More Schwarzites are porous (spongy-like) carbon allotropes with negative Gaussian curvatures. They were proposed by Mackay and Terrones inspired by the works of the German mathematician Hermann Schwarz on Triply-Periodic Minimal Surfaces (TPMS). This review presents and discusses the history of schwarzites and their place among curved carbon nanomaterials. We summarized the main works on schwarzites available in the literature. We discuss their unique structural, electronic, thermal, and mechanical properties. Although the synthesis of carbon-based schwarzites remains elusive, the recent advances in the synthesis of zeolite-templates nanomaterials bring them closer to reality. Atomic-based models of schwarzites have been translated into macroscale ones that have been 3D printed. These 3D printed models have been exploited in many real-world applications, including water remediation and biomedical ones. △ Less

Submitted 15 January, 2024; originally announced January 2024.

VO2 Phase Change Electrodes in Li-ion Batteries

Authors: Samuel Castro-Pardo, Anand B. Puthirath, Shaoxun Fan, Sreehari Saju, Guang Yang, Jagjit Nanda, Robert Vajtai, Ming Tang, Pulickel M. Ajayan

Abstract: Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation, have not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO2) cathode that undergoes metal-insulator transition due to first-order structural phase transition at accessible temperature of 68°C for battery operation. Using a suitable electrol… ▽ More Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation, have not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO2) cathode that undergoes metal-insulator transition due to first-order structural phase transition at accessible temperature of 68°C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of electrode structure change on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. This opens up new avenues for electrode designs, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to existing classes of battery chemistries that lead to performance deterioration at elevated temperatures. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: 21 pages, 4 figures

Journal ref: J. Mater. Chem. A, 2024, Advance Article

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Authors: Lucas M. Sassi, Sathvik Ajay Iyengar, Anand B. Puthirath, Yuefei Huang, Xingfu Li, Tanguy Terlier, Ali Mojibpour, Ana Paula C. Teixeira, Palash Bharadwaj, Chandra Sekhar Tiwary, Robert Vajtai, Saikat Talapatra, Boris Yakobson, Pulickel M. Ajayan

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for c… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for crystal growth. Additionally, deleterious and time-consuming transfer processes and multiple steps involved in channel/contact engineering can cripple device performance. This work demonstrates kinetics-governed in-situ growth regimes (surface or edge growth from gold) of WSe2 and provides a mechanistic understanding of these regimes via energetics across various material interfaces. As a proof-of-concept, field effect transistors (FET) with an in-situ grown WSe2 channel across Au contacts are fabricated, demonstrating a 2D semiconductor transistor via a transfer-free method within the 450-600 C 2h-time window requirement BEOL integration. We leverage directional edge growth to fabricate contacts with robust thickness-dependent Schottky-to-Ohmic behavior. By transitioning between Au and SiO2 growth substrates in situ, this work achieves strain-induced subthreshold swing of 140 mV/decade, relatively high mobility of 107 +- 19 cm2V-1s-1, and robust ON/OFF ratios 10^6 in the fabricated FETs. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 32 pages, 5 Figures

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Authors: Abhijit Biswas, Gustavo A. Alvarez, Tao Li, Joyce Christiansen-Salameh, Eugene Jeong, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Tia Gray, Xiang Zhang, Tymofii S. Pieshkov, Harikishan Kannan, Jacob Elkins, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Elias J. Garratt, Bradford B. Pate, Tony G. Ivanov, Yuji Zhao, Zhiting Tian, Pulickel M. Ajayan

Abstract: Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition a… ▽ More Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures. △ Less

Submitted 20 September, 2023; v1 submitted 22 May, 2023; originally announced May 2023.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. Materials 7, 094602 (2023)

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Authors: Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, ** Zhang, Joyce Christiansen-Salameh, Anand B. Puthirath, Kory Burns, Jordan A. Hachtel, Tao Li, Sathvik Ajay Iyengar, Tia Gray, Chenxi Li, Xiang Zhang, Harikishan Kannan, Jacob Elkins, Tymofii S. Pieshkov, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Elias J. Garratt, Tony Ivanov, Bradford B. Pate, Yuji Zhao, Hanyu Zhu, Zhiting Tian , et al. (2 additional authors not shown)

Abstract: Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and s… ▽ More Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. Our work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology. △ Less

Submitted 4 November, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

Comments: 33 pages, 4 figures

Journal ref: Adv. Mater. 2023, 2304624

Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites

Authors: Abhijit Biswas, Rui Xu, Joyce Christiansen-Salameh, Eugene Jeong, Gustavo A. Alvarez, Chenxi Li, Anand B. Puthirath, Bin Gao, Arushi Garg, Tia Gray, Harikishan Kannan, Xiang Zhang, Jacob Elkins, Tymofii S. Pieshkov, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Bradford B. Pate, Tony Ivanov, Elias J. Garratt, Pengcheng Dai, Hanyu Zhu, Zhiting Tian, Pulickel M. Ajayan

Abstract: Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show… ▽ More Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the co-existence of two phases can lead to strong non-linear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN grain sizes governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorphs based nanocomposites with desirable properties for optoelectronics and thermal energy management applications. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Comments: 29 pages, 5 figures

Journal ref: Nano Lett. 2023, 23, 15, 6927

Atomically Thin Yellow Pearl: An Impetus for Thermal Nonlinear Optical Effect Assisted Continuous Wave Random Lasing

Authors: N. Mandal, A. Pramanik, A. Dey, P. Kumbhakar, V. Kochat, A. R. S. Gautam, N. Glavin, A. K. Roy, P. M. Ajayan, C. S. Tiwary

Abstract: Above cryogenic temperatures, random laser (RL) emission under continuous wave (CW) optical pum** is often challenging for materials having plenty of lattice defects. Thus, intensive care is required while fabricating the RL device. Synthesis of 2D materials having unique functionality at the atomic limit is necessary for use in such devices. In this work, defects-free 2D yellow pearl (2D-YP) ha… ▽ More Above cryogenic temperatures, random laser (RL) emission under continuous wave (CW) optical pum** is often challenging for materials having plenty of lattice defects. Thus, intensive care is required while fabricating the RL device. Synthesis of 2D materials having unique functionality at the atomic limit is necessary for use in such devices. In this work, defects-free 2D yellow pearl (2D-YP) has been synthesized from bulk south sea pearl using liquid-phase exfoliation (LPE) technique. Thereafter, 2D-YP has been employed as passive scatterer to achieve CW pumped RL emission from a conventional gain molecule, i.e., Rhodamine B (RhB). Compared to other semiconductor (TiO2) and 2D (Graphene and h-BN) passive scatterers, ~25 times improvement in gain volume is observed for the disordered system consisting of RhB and 2D-YP, i.e., 2D-YP@RhB, which is found to be due to the formation of a large refractive index gradient, as induced by the thermal nonlinear optical (NLO) interaction. Hence, incoherent RL (ic-RL) emission ~591 nm is reported for 2D-YP@RhB at a lowest threshold input pump power and a linewidth of 65 mW and 3 nm, respectively. Additionaly, a clear transition from ic-RL to mode tunable coherent RL (c-RL) emission is also possible by altering the configuration of the 2D-YP@RhB container. Therefore, the newly designed Van der Waals heterostructure, i.e., 2D-YP with intrinsic photon trap** capability may pave an avenue towards develo** future exciting optoelectronic devices. △ Less

Submitted 27 September, 2022; originally announced September 2022.

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Authors: Abhijit Biswas, Mingfei Xu, Kai Fu, **gan Zhou, Rui Xu, Anand B. Puthirath, Jordan A. Hachtel, Chenxi Li, Sathvik Ajay Iyengar, Harikishan Kannan, Xiang Zhang, Tia Gray, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Dmitry A. Ruzmetov, Pankaj B. Shah, Tony Ivanov, Hanyu Zhu, Yuji Zhao, Pulickel M. Ajayan

Abstract: Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the gr… ▽ More Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: 5 Figures, Published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 121, 092105 (2022)

Unidirectional domain growth of hexagonal boron nitride thin films

Authors: Abhijit Biswas, Qiyuan Ruan, Frank Lee, Chenxi Li, Sathvik Ajay Iyengar, Anand B. Puthirath, Xiang Zhang, Harikishan Kannan, Tia Gray, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Manoj Tripathi, Alan Dalton, Boris I. Yakobson, Pulickel M. Ajayan

Abstract: Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates rem… ▽ More Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena. △ Less

Submitted 26 January, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Comments: 39 pages, 7 figures, Revised accepted version of the article

Journal ref: Applied Materials Today, Volume 30, February 2023, 101734

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Authors: Abhijit Biswas, Rishi Maiti, Frank Lee, Cecilia Y. Chen, Tao Li, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Xiang Zhang, Harikishan Kannan, Tia Gray, Md Abid Shahriar Rahman Saadi, Jacob Elkins, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Yuji Zhao, Alexander L. Gaeta, Manoj Tripathi, Alan Dalton, Pulickel M. Ajayan

Abstract: Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff… ▽ More Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget. △ Less

Submitted 12 October, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Comments: 27 pages, 4 figures, Authors version of the article

Journal ref: Nanoscale Horizons, 2023, 8, 641-651

Two-dimensional (2D) d-Silicates from abundant natural minerals

Authors: Preeti Lata Mahapatra, Appu Kumar Singh, Raphael Tromer, Karthik R., Ambresha M., Gelu Costin, Basudev Lahiri, Tarun Kumar Kundu, P. M. Ajayan, Douglas S. Galvao, Chandra Shekhar Tiwary

Abstract: In the last decade, the materials community has been exploring new 2D materials (graphene, metallene, TMDs, TMCs, MXene, among others) that have unique physical and chemical properties. Recently, a new family of 2D materials, the so-called 2D silicates, have been proposed. They are predicted to exhibit exciting properties (such as high catalytic activity, piezoelectricity, and 2D magnetism). In th… ▽ More In the last decade, the materials community has been exploring new 2D materials (graphene, metallene, TMDs, TMCs, MXene, among others) that have unique physical and chemical properties. Recently, a new family of 2D materials, the so-called 2D silicates, have been proposed. They are predicted to exhibit exciting properties (such as high catalytic activity, piezoelectricity, and 2D magnetism). In the current work, we demonstrate a generic approach to the synthesis of large-scale 2D silicates from selected minerals, such as Diopside (d). Different experimental techniques were used to confirm the existence of the 2D structures (named 2D-d-silicates). DFT simulations were also used to gain insight into the structural features and energy harvesting mechanisms (flexoelectric response generating voltage up to 10 V). The current approach is completely general and can be utilized for large-scale synthesis of 2D silicates and their derivatives, whose large-scale syntheses have been elusive. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Scalable synthesis of 2D van der Waals superlattices

Authors: Michael J. Motala, Xiang Zhang, Pawan Kumar, Eliezer F. Oliveira, Anna Benton, Paige Miesle, Rahul Rao, Peter R. Stevenson, David Moore, Adam Alfieri, Jason Lynch, Guanhui Gao, Sijie Ma, Hanyu Zhu, Zhe Wang, Ivan Petrov, Eric A. Stach, W. Joshua Kennedy, Shiva Vengala, James M. Tour, Douglas S. Galvao, Deep Jariwala, Christopher Muratore, Michael Snure, Pulickel M. Ajayan , et al. (1 additional authors not shown)

Abstract: Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate… ▽ More Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Magnetic Field Dependent Piezoelectricity in Atomically Thin Co$_2$Te$_3$

Authors: Solomon Demiss, Alexey Karstev, Mithun Palit, Prafull Pandey, G. P Das, Olu Emmanuel Femi, Ajit K. Roy, Partha Kumbhakar, Pulickel M. Ajayan, Chandra Sekhar Tiwary

Abstract: Two dimensional (2D) materials have received a surge in research interest due to their exciting range of properties. Here we show that 2D cobalt telluride (Co2Te3), successfully synthesized via liquid-phase exfoliation in an organic solvent, exhibits weak ferromagnetism and semiconducting behavior at room temperature. The magnetic field-dependent piezoelectric properties of 2D Co2Te3 sample show m… ▽ More Two dimensional (2D) materials have received a surge in research interest due to their exciting range of properties. Here we show that 2D cobalt telluride (Co2Te3), successfully synthesized via liquid-phase exfoliation in an organic solvent, exhibits weak ferromagnetism and semiconducting behavior at room temperature. The magnetic field-dependent piezoelectric properties of 2D Co2Te3 sample show magneto-electric response of the material and a linear relationship between the output voltage and applied magnetic field. First-principles density functional theory (DFT) and ab initio molecular dynamics are used to explain these experimental results. Our work could pave the way for the development of 2D materials with coupled magnetism and piezoelectricity, leading to new applications in electromagnetics. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Two-dimensional Cobalt Telluride as Piezo-tribogenerator

Authors: Solomon Demiss, Raphael Tromer, Chinmayee Chowde Gowda, Olu Emmanuel Femi, Ajit K. Roy, Prafull Pandey, Douglas S. Galvao, Partha Kumbhakar, Pulickel M. Ajayan, Chandra Sekhar Tiwary

Abstract: Two-dimensional (2D) materials have been shown to be efficient in energy harvesting. Here, we report utilization of waste heat to generate electricity via combined piezoelectric and triboelectric property of 2D Cobalt Telluride (CoTe2). The piezo-triboelectric nanogenerator (PTNG) produced an open-circuit voltage of ~5V under 1N force and the effect of temperature in the 305-363 K range shows a fo… ▽ More Two-dimensional (2D) materials have been shown to be efficient in energy harvesting. Here, we report utilization of waste heat to generate electricity via combined piezoelectric and triboelectric property of 2D Cobalt Telluride (CoTe2). The piezo-triboelectric nanogenerator (PTNG) produced an open-circuit voltage of ~5V under 1N force and the effect of temperature in the 305-363 K range shows a four-fold energy conversion efficiency improvement. The 2D piezo-tribogenerator shows excellent characteristics with a maximum voltage of ~10V, fast response time and high responsivity. Density functional theory was used to gain further insights and validation of the experimental results. Our results could lead to energy harvesting approaches using 2D materials from various thermal sources and dissipated waste heat from electronic devices. △ Less

Submitted 2 September, 2021; originally announced September 2021.

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Authors: Eliezer F. Oliveira, Mahesh R. Neupane, Chenxi Li, Harikishan Kannan, Xiang Zhang, Anand B. Puthirath, Pankaj B. Shah, A. Glen Birdwell, Tony G. Ivanov, Robert Vajtai, Douglas S. Galvao, Pulickel M. Ajayan

Abstract: Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond s… ▽ More Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 24 pages

Anisotropic Frictional Response of Texture Induced Strained Graphene

Authors: Andrea Mescola, Guido Paolicelli, Roberto Guarino, James G. McHugh, Sean P. Ogilvie, Alberto Rota, Enrico Gnecco, Erica Iacob, Sergio Valeri, Nicola M. Pugno, Venkata Gadhamshetty, Muhammad M. Rahman, Pulickel M. Ajayan, Alan B. Dalton, Manoj Tripathi

Abstract: Friction-induced energy dissipation impedes the performance of nanoscale devices during their relative motion. Nevertheless, an ingeniously designed structure which utilizes graphene top** can tune the friction force signal by inducing local strain. The present work reports cap** of graphene over Si grooved surfaces of different pitch lengths from sub-nanoscale (P=40 nm) to a quarter of a micr… ▽ More Friction-induced energy dissipation impedes the performance of nanoscale devices during their relative motion. Nevertheless, an ingeniously designed structure which utilizes graphene top** can tune the friction force signal by inducing local strain. The present work reports cap** of graphene over Si grooved surfaces of different pitch lengths from sub-nanoscale (P=40 nm) to a quarter of a micron (P= 250 nm). The variation in the pitch lengths induces different strains in graphene revealed by scanning probe techniques, Raman spectroscopy and molecular dynamics (MD) simulation. The asymmetric straining of C-C bonds over the groove architecture is exploited through friction force microscopy in different directions of orthogonal and parallel to groove axis. The presence of graphene lubricates the textured surface by a factor of 10 and periodically dissipated friction force, which was found to be stochastic over the bare surface. For the first time, we presented transformation of the lubrication into an ultra-low friction force by a factor of 20 over the crest scanning parallel to the groove axis. Such anisotropy is found to be insignificant at the bare textured system, clearly demonstrating the strain-dependent regulation of friction force. Our results are applicable for graphene, and other 2D materials covered corrugated structures with movable components such as NEMS, nanoscale gears and robotics. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 32 pages, 4 figures

Processing Dynamics of 3D-Printed Carbon Nanotubes-Epoxy Composites

Authors: Ali Khater, Sohini Bhattacharyya, M. A. S. R. Saadi, Morgan Barnes, Minghe Lou, Vijay Harikrishnan, Seyed Mohammad Sajadi, Peter J. Boul, Chandra Sekhar Tiwary, Hanyu Zhu, Muhammad M. Rahman, Pulickel M. Ajayan

Abstract: Carbon Nanotubes (CNTs)-polymer composites are promising candidates for a myriad of applications. Ad-hoc CNTs-polymer composite fabrication techniques inherently pose roadblock to optimized processing resulting in microstructural defects i.e., void formation, poor interfacial adhesion, wettability, and agglomeration of CNTs inside the polymer matrix. Although improvement in the microstructures can… ▽ More Carbon Nanotubes (CNTs)-polymer composites are promising candidates for a myriad of applications. Ad-hoc CNTs-polymer composite fabrication techniques inherently pose roadblock to optimized processing resulting in microstructural defects i.e., void formation, poor interfacial adhesion, wettability, and agglomeration of CNTs inside the polymer matrix. Although improvement in the microstructures can be achieved via additional processing steps such as-mechanical methods and/or chemical functionalization, the resulting composites are somewhat limited in structural and functional performances. Here, we demonstrate that 3D printing technique like-direct ink writing offers improved processing of CNTs-polymer composites. The shear-induced flow of an engineered nanocomposite ink through the micronozzle offers some benefits including reducing the number of voids within the epoxy, improving CNTs dispersion and adhesion with epoxy, and partially aligns the CNTs. Such microstructural changes result in superior mechanical performance and heat transfer in the composites compared to their mold-casted counterparts. This work demonstrates the advantages of 3D printing over traditional fabrication methods, beyond the ability to rapidly fabricate complex architectures, to achieve improved processing dynamics for fabricating CNT-polymer nanocomposites with better structural and functional properties. △ Less

Submitted 3 March, 2021; originally announced March 2021.

Comments: 16 pages, 6 figures

Interferometric 4D-STEM for Lattice Distortion and Interlayer Spacing Measurements in Bilayer and Trilayer Two-dimensional Materials

Authors: Michael J Zachman, Jacob Madsen, Xiang Zhang, Pulickel M Ajayan, Toma Susi, Miaofang Chi

Abstract: Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or the stacking sequence of trilayer materials. To fully understand and control the unique properties of these few-layer materials, a technique that can provide i… ▽ More Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or the stacking sequence of trilayer materials. To fully understand and control the unique properties of these few-layer materials, a technique that can provide information about their local in-plane structural deformations, twist direction, and out-of-plane structure is needed. In principle, interference in overlap regions of Bragg disks originating from separate layers of a material encodes three-dimensional information about the relative positions of atoms in the corresponding layers. Here, we describe an interferometric four-dimensional scanning transmission electron microscopy technique that utilizes this phenomenon to extract precise structural information from few-layer materials with nm-scale resolution. We demonstrate how this technique enables measurement of local pm-scale in-plane lattice distortions as well as twist direction and average interlayer spacings in bilayer and trilayer graphene, and therefore provides a means to better understand the interplay between electronic properties and precise structural arrangements of few-layer 2D materials. △ Less

Submitted 12 May, 2021; v1 submitted 4 December, 2020; originally announced December 2020.

Three-dimensional Printing of Complex Graphite Structures

Authors: Seyed Mohammad Sajadi, Shayan Enayat, Lívia Vásárhelyi, Alessandro Alabastri, Minghe Lou, Lucas M. Sassi, Alex Kutana, Sanjit Bhowmick, Christian Durante, Ákos Kukovecz, Anand B. Puthirath, Zoltán Kónya, Robert Vajtai, Peter Boul, Chandra Shekhar Tiwary, Muhammad M. Rahman, Pulickel M. Ajayan

Abstract: Graphite, with many industrial applications, is one of the widely sought-after allotropes of carbon. The sp2 hybridized and thermodynamically stable form of carbon forms a layered structure with strong in-plane carbon bonds and weak inter-layer van der Waals bonding. Graphite is also a high-temperature ceramic, and sha** them into complex geometries is challenging, given its limited sintering be… ▽ More Graphite, with many industrial applications, is one of the widely sought-after allotropes of carbon. The sp2 hybridized and thermodynamically stable form of carbon forms a layered structure with strong in-plane carbon bonds and weak inter-layer van der Waals bonding. Graphite is also a high-temperature ceramic, and sha** them into complex geometries is challenging, given its limited sintering behavior even at high temperatures. Although the geometric design of the graphite structure in many of the applications could dictate its precision performance, conventional synthesis methods for formulating complex geometric graphite shapes are limited due to the intrinsic brittleness and difficulties of high-temperature processing. Here, we report the development of colloidal graphite ink from commercial graphite powders with reproducible rheological behavior that allows the fabrication of any complex architectures with tunable geometry and directionality via 3D printing at room temperature. The method is enabled via using small amounts of clay, another layered material, as an additive, allowing the proper design of the graphene ink and subsequent binding of graphite platelets during printing. Sheared layers of clay are easily able to flow, adapt, and interface with graphite layers forming strong binding between the layers and between particles that make the larger structures. The direct ink printing of complex 3D architectures of graphite without further heat treatments could lead to easy shape engineering and related applications of graphite at various length scales, including complex graphite molds or crucibles. The 3D printed complex graphitic structures exhibit excellent thermal, electrical, and mechanical properties, and the clay additive does not seem to alter these properties due to the excellent inter-layer dispersion and mixing within the graphite material. △ Less

Submitted 2 December, 2020; originally announced December 2020.

Comments: 19 pages, 4 figures

Apparent Ferromagnetism in Exfoliated Ultra-thin Pyrite Sheets

Authors: Anand B. Puthirath, Aravind Puthirath Balan, Eliezer F. Oliveira, Vishnu Sreepal, Francisco C. Robles Hernandez, Guanhui Gao, Nithya Chakingal, Lucas M. Sassi, Prasankumar Thibeorchews, Gelu Costin, Robert Vajtai, Douglas S. Galvao, Rahul R. Nair, Pulickel M. Ajayan

Abstract: Experimental evidence for ferromagnetic ordering in isotropic atomically thin two-dimensional crystals has been missing until a bilayer Cr2Ge2Te6, and a three-atom thick monolayer CrI3 are shown to retain ferromagnetic ordering at finite temperatures. Here, we demonstrate successful isolation of a non-van der Waals type ultra-thin nanosheet of FeS2 derived from naturally occurring pyrite mineral (… ▽ More Experimental evidence for ferromagnetic ordering in isotropic atomically thin two-dimensional crystals has been missing until a bilayer Cr2Ge2Te6, and a three-atom thick monolayer CrI3 are shown to retain ferromagnetic ordering at finite temperatures. Here, we demonstrate successful isolation of a non-van der Waals type ultra-thin nanosheet of FeS2 derived from naturally occurring pyrite mineral (FeS2) by means of liquid-phase exfoliation. Structural characterizations imply that (111) oriented sheets are predominant and is supported theoretically by means of density functional theory surface energy calculations. Spin-polarized density theory calculations further predicted that (111) oriented three-atom thick pyrite sheet has a stable ferromagnetic ground state different from its diamagnetic bulk counterpart. This theoretical finding is evaluated experimentally employing low temperature superconducting quantum interference device measurements and observed an anomalous ferromagnetic kind of behavior. △ Less

Submitted 28 August, 2021; v1 submitted 6 October, 2020; originally announced October 2020.

Comments: 21 pages, 5 figures

Journal ref: Journal of Physical Chemistry C, 2021

Corrosion Resistance of Sulfur-Selenium Alloy Coatings

Authors: Sandhya Susarla, Govind Chilkoor, Yufei Cui, Taib Arif, Thierry Tsafack, Anand Puthirath, Parambath M. Sudeep, Jawahar R. Kalimuthu, Aly Hassan, Samuel Castro-Pardo, Morgan Barnes, Rafael Verduzco, Tobin Filleter, Nikhil Koratkar, Venkataramana Gadhamshetty, Muhammad M Rahman, Pulickel M. Ajayan

Abstract: Despite decades of research, metallic corrosion remains a long-standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here we design a lightweight sulfur-selenium (S-Se) alloy with high stiffness and ductility that can serve as a universal corrosion-resistant coating with prot… ▽ More Despite decades of research, metallic corrosion remains a long-standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here we design a lightweight sulfur-selenium (S-Se) alloy with high stiffness and ductility that can serve as a universal corrosion-resistant coating with protection efficiency of ~99.9% for steel in a wide range of diverse environments. S-Se coated mild steel shows a corrosion rate that is 6-7 orders of magnitude lower than bare metal in abiotic (simulated seawater and sodium sulfate solution) and biotic (sulfate-reducing bacterial medium) environments. The coating is strongly adhesive and mechanically robust. We attribute the high corrosion resistance of the alloy in diverse environments to its semi-crystalline, non-porous, anti-microbial, and viscoelastic nature with superior mechanical performance, enabling it to successfully block a variety of diffusing species. △ Less

Submitted 4 September, 2020; originally announced September 2020.

Comments: 22 pages, 4 figures

U-carbon: metallic and magnetic

Authors: Hong Fang, Michael Masaki, Anand B. Puthirath, Jaime M. Moya, Guanhui Gao, Emilia Morosan, Pulickel M. Ajayan, Joel Therrien, Puru Jena

Abstract: We report the discovery of a pristine crystalline 3D carbon that is magnetic, electrically conductive and stable under ambient conditions. This carbon material, which has remained elusive for decades, is synthesized by using the chemical vapor deposition (CVD) technique with a particular organic molecular precursor 3,3-dimethyl-1-butene (C6H12). An exhaustive computational search of the potential… ▽ More We report the discovery of a pristine crystalline 3D carbon that is magnetic, electrically conductive and stable under ambient conditions. This carbon material, which has remained elusive for decades, is synthesized by using the chemical vapor deposition (CVD) technique with a particular organic molecular precursor 3,3-dimethyl-1-butene (C6H12). An exhaustive computational search of the potential energy surface reveals its unique sp2-sp3 hybrid bonding topology. Synergistic studies involving a large number of experimental techniques and multi-scale first-principles calculations reveal the origin of its novel properties due to the special arrangement of sp2 carbon atoms in lattice. The discovery of this U-carbon, named such because of its unusual structure and properties, can open a new chapter in carbon science. △ Less

Submitted 3 August, 2020; originally announced August 2020.

Zeolite-inspired 3d printed structures with enhanced mechanical properties

Authors: Rushikesh S. Ambekar, Eliezer F. Oliveira, Brijesh Kushwaha, Leonardo D. Machado, Mohammad Sajadi, Ray H. Baughman, Pulickel M. Ajayan, Ajit K. Roy, Douglas S. Galvao, Chandra S. Tiwary

Abstract: Specific strength (strength/density) is a crucial factor while designing high load bearing architecture in areas of aerospace and defence. Strength of the material can be enhanced by blending with high strength component or, by compositing with high strength fillers but both the options has limitations such as at certain load, materials fail due to poor filler and matrix interactions. Therefore, r… ▽ More Specific strength (strength/density) is a crucial factor while designing high load bearing architecture in areas of aerospace and defence. Strength of the material can be enhanced by blending with high strength component or, by compositing with high strength fillers but both the options has limitations such as at certain load, materials fail due to poor filler and matrix interactions. Therefore, researchers are interested in enhancing strength of materials by playing with topology/geometry and therefore nature is best option to mimic for structures whereas, complexity limits nature mimicked structures. In this paper, we have explored Zeolite-inspired structures for load bearing capacity. Zeolite-inspired structure were obtained from molecular dynamics simulation and then fabricated via Fused deposition Modeling. The atomic scale complex topology from simulation is experimentally synthesized using 3D printing. Compressibility of as-fabricated structures was tested in different direction and compared with simulation results. Such complex architecture can be used for ultralight aerospace and automotive parts. △ Less

Submitted 12 February, 2020; v1 submitted 2 February, 2020; originally announced February 2020.

Comments: 24 pages, 6 figures

Journal ref: Additive Manufacturing, 2021, 101628

Room-temperature Single Photon Emitters in Cubic Boron Nitride Nanocrystals

Authors: Gabriel I. López-Morales, Aziza Almanakly, Sitakanta Satapathy, Nicholas V. Proscia, Harishankar Jayakumar, Valery N. Khabashesku, Pulickel M. Ajayan, Carlos A. Meriles, Vinod M. Menon

Abstract: Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously… ▽ More Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496-700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching with $g^{2}$ ~ 0.2 and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications. △ Less

Submitted 24 December, 2019; originally announced December 2019.

Comments: 7 pages, 3 figures

Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides

Authors: Bruno R. Carvalho, Yuanxi Wang, Kazunori Fujisawa, Tianyi Zhang, Ethan Kahn, Ismail Bilgin, Pulickel M. Ajayan, Ana M. de Paula, Marcos A. Pimenta, Swastik Kar, Vincent H. Crespi, Mauricio Terrones, Leandro M. Malard

Abstract: Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D de… ▽ More Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Comments: 15 pages, 5 figures

Journal ref: Nano Lett. 2020, 20, 1, 284-291

Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision

Authors: Xuezeng Tian, Dennis S. Kim, Shize Yang, Christopher J. Ciccarino, Yongji Gong, Yongsoo Yang, Yao Yang, Blake Duschatko, Yakun Yuan, Pulickel M. Ajayan, Juan-Carlos Idrobo, Prineha Narang, Jianwei Miao

Abstract: The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bon… ▽ More The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bond distortion and local strain tensor induced by single dopants for the first time. By directly providing experimental 3D atomic coordinates to density functional theory (DFT), we obtain more truthful electronic band structures than those derived from conventional DFT calculations relying on relaxed 3D atomic models, which is confirmed by photoluminescence measurements. We anticipate that sAET is not only generally applicable to the determination of the 3D atomic coordinates of 2D materials, heterostructures and thin films, but also could transform ab initio calculations by using experimental 3D atomic coordinates as direct input to better predict and discover new physical, chemical and electronic properties. △ Less

Submitted 8 September, 2019; v1 submitted 3 January, 2019; originally announced January 2019.

Comments: 44 pages, 18 figures

Mechanical Properties of Ultralow Density Graphene Oxide/Polydimethylsiloxane Foams

Authors: Cristiano F. Woellner, Peter S. Owuor, Tong Li, Soumya Vinod, Sehmus Ozden, Suppanat Kosolwattana, Sanjit Bhowmick, Luong X. Duy, Rodrigo V. Salvatierra, Bingqing Wei, Syed A. S. Asif, James M. Tour, Robert Vajtai, Jun Lou, Douglas S. Galvao, Chandra S. Tiwary, Pulickel. M. Ajayan

Abstract: Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical prop… ▽ More Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical properties are mainly attributed to the intrinsic graphene and/or GO electronic and mechanical properties. Despite the attractive physical properties of graphene/GO based-foams, their structural and thermal stabilities are still a problem for some applications. For instance, they are easily degraded when placed in flowing solutions, either by the collapsing of their layers or just by structural disintegration into small pieces. Recently, a new and scalable synthetic approach to produce low-density 3D macroscopic GO structure interconnected with polydimethylsiloxane (PDMS) polymeric chains (pGO) was proposed. A controlled amount of PDMS is infused into the freeze-dried foam resulting into a very rigid structure with improved mechanical properties, such as tensile plasticity and toughness. The PDMS wets the graphene oxide sheets and acts like a glue bonding PDMS and GO sheets. In order to obtain further insights on mechanisms behind the enhanced mechanical pGO response we carried out fully atomistic molecular dynamics (MD) simulations. Based on MD results, we build up a structural model that can explain the experimentally observed mechanical behavior. △ Less

Submitted 18 January, 2018; originally announced January 2018.

Differences in the Mechanical Properties of Monolayer and Multilayer WSe2/MoSe2

Authors: Y. M. Jaques, P. Manimunda, Y. Nakanishi, S. Susarla, C. F. Woellner, S. Bhowmick, S. A. S. Asif, D. S. Galvão, C. S. Tiwary, P. M. Ajayan

Abstract: Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed understanding of the properties of their few-layer structures are still missing. In this work we investigated the mechanical differences between monolayer and multilayer WS… ▽ More Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed understanding of the properties of their few-layer structures are still missing. In this work we investigated the mechanical differences between monolayer and multilayer WSe2 and MoSe2, through fully atomistic molecular dynamics simulations (MD). It was observed that single layer WSe2/MoSe2 deposited on silicon substrates have larger friction coefficients than 2, 3 and 4 layered structures. For all considered cases it is always easier to peel off and/or to fracture MoSe2 structures. These results suggest that the interactions between first layer and substrate are stronger than interlayer interactions themselves. Similar findings have been reported for other nanomaterials and it has been speculated whether this is a universal-like behavior for 2D layered materials. We have also analyzed fracture patterns. Our results show that fracture is chirality dependent with crack propagation preferentially perpendicular to W(Mo)-Se bonds and faster for zig-zag-like defects. △ Less

Submitted 17 January, 2018; originally announced January 2018.

Quaternary two-dimensional (2D) transition metal dichalcogenides (TMDs) with tunable bandgap

Authors: Sandhya Susarla, Alex Kutana, Jordan A. Hachtel, Vidya Kochat, Amey Apte, Robert Vajtai, Juan Carlos Idrobo, Boris I. Yakobson, Chandra Sekhar Tiwary, Pulickel M Ajayan

Abstract: Alloying/do** in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys… ▽ More Alloying/do** in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys has been tuned by changing the growth temperatures. As a result, we can tune the bandgap which varies from 1.73 eV to 1.84 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Atomically thin gallium layers from solid-melt exfoliation

Authors: V. Kochat, A. Samanta, Y. Zhang, S. Bhowmick, P. Manimunda, S. A. S. Asif, A. Stender, Robert Vajtai, A. K. Singh, C. S. Tiwary, P. M. Ajayan

Abstract: Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets, having two distinct atomic arrangements along crystallographic twin directions of the parent alpha-gallium. Utilizing the weak interface bet… ▽ More Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets, having two distinct atomic arrangements along crystallographic twin directions of the parent alpha-gallium. Utilizing the weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations show that gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the non-linear dispersive band near Fermi level suggesting that gallenene should behave as a metallic layer. Furthermore it is observed that strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter paving the way for using gallenene as interesting metallic contacts in 2D devices. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Self-optimizing layered hydrogen evolution catalyst with high basal-plane activity

Authors: Yuanyue Liu, **gjie Wu, Ken P. Hackenberg, **g Zhang, Y. Morris Wang, Yingchao Yang, Kunttal Keyshar, **g Gu, Tadashi Ogitsu, Robert Vajtai, Jun Lou, Pulickel M. Ajayan, Brandon C. Wood, Boris I. Yakobson

Abstract: Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or… ▽ More Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or processing costs while retaining the highest possible activity. Strategies have included dilute alloying of Pt2 or employing less expensive transition metal alloys, compounds or heterostructures (e.g., NiMo, metal phosphides, pyrite sulfides, encapsulated metal nanoparticles)3-5. Recently, low-cost, layered transition-metal dichalcogenides (MX2)6 based on molybdenum and tungsten have attracted substantial interest as alternative HER catalysts7-11. These materials have high intrinsic per-site HER activity; however, a significant challenge is the limited density of active sites, which are concentrated at the layer edges.8,10,11. Here we use theory to unravel electronic factors underlying catalytic activity on MX2 surfaces, and leverage the understanding to report group-5 MX2 (H-TaS2 and H-NbS2) electrocatalysts whose performance instead derives from highly active basal-plane sites. Beyond excellent catalytic activity, they are found to exhibit an unusual ability to optimize their morphology for enhanced charge transfer and accessibility of active sites as the HER proceeds. This leads to long cycle life and practical advantages for scalable processing. The resulting performance is comparable to Pt and exceeds all reported MX2 candidates. △ Less

Submitted 19 August, 2016; originally announced August 2016.

Square selenene and tellurene: novel group VI elemental 2D semi-Dirac materials and topological insulators

Authors: Lede Xian, Alejandro Pérez Paz, Elisabeth Bianco, Pulickel M. Ajayan, Angel Rubio

Abstract: With first principles calculations, we predict a novel stable 2D layered structure for group VI elements Se and Te that we call square selenene and square tellurene, respectively. They have chair-like buckled structures similar to other layered materials such as silicene and germanene but with a square unit cell rather than hexagonal. This special structure gives rise to anisotropic band dispersio… ▽ More With first principles calculations, we predict a novel stable 2D layered structure for group VI elements Se and Te that we call square selenene and square tellurene, respectively. They have chair-like buckled structures similar to other layered materials such as silicene and germanene but with a square unit cell rather than hexagonal. This special structure gives rise to anisotropic band dispersions near the Fermi level that can be described by a generalized semi-Dirac Hamiltonian. We show that the considerably large band gap ($\sim$0.1 eV) opened by spin-orbit coupling makes square selenene and tellurene topological insulators, hosting non-trivial edge states. Therefore, square selenene and tellurene are promising materials for novel electronic and spintronic applications. Finally, we show that this new type of 2D elemental material can potentially be grown on proper substrates, such as a Au(100) surface. △ Less

Submitted 6 July, 2016; originally announced July 2016.

Valley Trion Dynamics in Monolayer MoSe$_2$

Authors: Feng Gao, Yongji Gong, Michael Titze, Raybel Almeida, Pulickel M. Ajayan, Hebin Li

Abstract: Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different… ▽ More Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different pump fluences show that the trion decay dynamics become slower as the excitation density increases. The observed trion dynamics and the associated density dependence are a result of the trap** by two defect states as being the dominating decay mechanism. The simulation based on a set of rate equations reproduces the experimental data for different pump fluences. Our results reveal the important trion dynamics and identify the trap** by defect states as the primary trion decay mechanism in monolayer MoSe$_2$ under the excitation densities used in our experiment. △ Less

Submitted 14 April, 2016; originally announced April 2016.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. B 94, 245413 (2016)

Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors

Authors: N. R. Pradhan, D. Rhodes, S. Memaran, J. M. Poumirol, D. Smirnov, S. Talapatra, S. Feng, N. Perea-Lopez, A. L. Elias, M. Terrones, P. M. Ajayan, L. Balicas

Abstract: Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/V… ▽ More Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hop** behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics. △ Less

Submitted 1 February, 2015; originally announced February 2015.

Comments: 35 pages including supplementary information. 7 figures in main text, 4 figures in supplementary file

Journal ref: Sci. Rep. 5, 8979 (2015)

Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2

Authors: Hisato Yamaguchi, Jean-Christophe Blancon, Rajesh Kappera, Sidong Lei, Sina Najmaei, Benjamin D. Mangum, Gautam Gupta, Pulickel M. Ajayan, Jun Lou, Manish Chhowalla, Jared J. Crochet, Aditya D. Mohite

Abstract: A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microsc… ▽ More A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption. △ Less

Submitted 17 December, 2014; originally announced December 2014.

Comments: 20 pages, 6 figures, 8 pages of supporting information, accepted to ACS Nano

Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions

Authors: Shahriar Memaran, Nihar R. Pradhan, Zhengguang Lu, Daniel Rhodes, J. Ludwig, Q. Zhou, Omotola Ogunsolu, Pulickel M. Ajayan, Dmitry Smirnov, Luis Balicas

Abstract: Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficienc… ▽ More Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficiencies $η\geq 1$ % extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately ten atomic-layers of MoSe$_2$ stacked onto the dielectric $h$-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies $η$ exceeding 14 %, with fill-factors of ~ 70 %. Given the available strategies for increasing $η$ such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs. △ Less

Submitted 30 October, 2015; v1 submitted 8 November, 2014; originally announced November 2014.

Comments: Over 25 pages with the inclusion of the supplementary information (Nano Letters, in press)

Journal ref: Nano Letters 15, 7532 (2015)

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Authors: Yexin Deng, Zhe Luo, Nathan J. Conrad, Han Liu, Yongji Gong, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Xianfan Xu, Peide D. Ye

Abstract: Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus,… ▽ More Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting. △ Less

Submitted 13 July, 2014; originally announced July 2014.

Comments: 37 pages

Journal ref: ACS Nano, 2014, 8(8), pp. 8292-8299

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

Authors: Han Liu, Mengwei Si, Yexin Deng, Adam T. Neal, Yuchen Du, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Peide D. Ye

Abstract: In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length… ▽ More In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit. △ Less

Submitted 18 December, 2013; originally announced December 2013.

Comments: ACS Nano, ASAP (2013)

Journal ref: ACS Nano, 8, 1031-1038 (2014)

Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces

Authors: Xue** Jiang, Neerav Kharche, Paul Kohl, Timothy B. Boykin, Gerhard Klimeck, Mathieu Luisier, Pulickel M. Ajayan, Saroj K. Nayak

Abstract: In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrate… ▽ More In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrates has not been thoroughly investigated. Using large-scale electronic structure calculations based on the GW approach, we show that when GNRs are deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV) even though the GNR-substrate interaction is weak. △ Less

Submitted 12 September, 2013; originally announced September 2013.

Journal ref: Appl. Phys. Lett. 103 , 133107 (2013)

Temperature-dependent Phonon Shifts in Monolayer MoS2

Authors: Nicholas Lanzillo, A. Glen Birdwell, Matin Amani, Frank J. Crowne, Pankaj B. Shah, Sina Najmaei, Zheng Liu, Pulickel M. Ajayan, Jun Lou, Madan Dubey, Saroj K. Nayak, Terrance P. O'Regan

Abstract: We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported… ▽ More We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported bulk behavior, in which the E2g mode shows a larger frequency shift with temperature. The temperature dependence of these phonon shifts is attributed to the anharmonic contributions to the ionic interaction potential in the two-dimensional system. △ Less

Submitted 9 July, 2013; originally announced July 2013.

Comments: 4 pages, 4 figures

Blue shifting of the A exciton peak in folded monolayer 1H-MoS2

Authors: Frank J. Crowne, Matin Amani, A. Glen Birdwell, Matthew L. Chin, Terrance P. O'Regan, Sina Najmaei, Zheng Liu, Pulickel M. Ajayan, Jun Lou, Madan Dubey

Abstract: The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experiment… ▽ More The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experimentally show that folding a 1H molybdenum disulphide (MoS2) layer results in a turbostratic stack with enhanced photoluminescence quantum yield and a significant shift to the blue by 90 meV. This is in contrast to the expected 2H-MoS2 band structure characteristics, which include an indirect gap and quenched photoluminescence. We present a theoretical explanation to the origin of this behavior in terms of exciton screening. △ Less

Submitted 5 July, 2013; originally announced July 2013.

Comments: 16 pages, 8 figures

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Authors: Han Liu, Mengwei Si, Sina Najmaei, Adam T. Neal, Yuchen Du, Pulickel M. Ajayan, Jun Lou, Peide D. Ye

Abstract: Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transist… ▽ More Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively. △ Less

Submitted 4 March, 2013; originally announced March 2013.

Journal ref: Nano Lett. 13, (6), 2640-2646 (2013)

Second harmonic microscopy of monolayer MoS2

Authors: Nardeep Kumar, Sina Najmaei, Qiannan Cui, Frank Ceballos, Pulickel M. Ajayan, Jun Lou, Hui Zhao

Abstract: We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. Second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 1E-7 m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second… ▽ More We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. Second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 1E-7 m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second harmonic microscopy measurement is performed on samples grown by chemical vapor deposition, which illustrates potential applications of this effect in fast and non-invasive detection of crystalline orientation, thickness uniformity, layer stacking, and single-crystal domain size of atomically thin films of MoS2 and similar materials. △ Less

Submitted 5 April, 2013; v1 submitted 16 February, 2013; originally announced February 2013.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 87, 161403(R) (2013)

Intrinsic carrier mobility of multi-layered MoS$_2$ field-effect transistors on SiO$_2$

Authors: N. R. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. M. Ajayan, L. Balicas

Abstract: By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $μ$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably s… ▽ More By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $μ$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts. △ Less

Submitted 28 March, 2013; v1 submitted 13 January, 2013; originally announced January 2013.

Comments: 8 pages, 5 figures, typos fixed, and references updated

Journal ref: Appl. Phys. Lett. 102, 123105 (2013)

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Authors: Sina Najmaei, Zheng Liu, Wu Zhou, Xiaolong Zou, Gang Shi, Sidong Lei, Boris I. Yakobson, Juan-Carlos Idrobo, Pulickel M. Ajayan, Jun Lou

Abstract: Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleat… ▽ More Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers. △ Less

Submitted 13 January, 2013; originally announced January 2013.

Comments: Submitted on Jan 6th 2013

Growth of carbon nanotubes on quasicrystalline alloys

Authors: Deep Jariwala, Kaushik Chandra, Anyuan Cao, Saikat Talapatra, Mutshihiro Shima, D. Anuhya, V. S. S. S. Prasad, R. Ribeiro, P. C. Canfield, D. Wu, Anchal Srivastava, R. K. Mandal, A. K. Pramanick, Robert Vajtai, Pulickel. M. Ajayan, G. V. S. Sastry

Abstract: We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also bee… ▽ More We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also been made between tubes grown on various quasicrystalline and SiO2 substrates. While a significant MWNT growth was observed on decagonal quasicrystalline substrate, there was no significant growth observed on icosahedral quasicrystalline substrate. Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) results show high crystalline nature of the nanotubes. Presence of continuous iron filled core in the nanotubes grown on these substrates was also observed, which is typically not seen in MWNTs grown using similar process on silicon and/or silicon dioxide substrates. The study has important implications for understanding the growth mechanism of MWNTs on conducting substrates which have potential applications as heat sinks. △ Less

Submitted 10 October, 2012; originally announced October 2012.

Journal ref: The Banaras Metallurgist, Vol. 17, 2012, Pg: 57-67

Catalytic sub-surface etching of nanoscale channels in graphite

Authors: Maya Lukas, Velimir Meded, Aravind Vijayaraghavan, Li Song, Pulickel M. Ajayan, Karin Fink, Wolfgang Wenzel, Ralph Krupke

Abstract: Catalytic hydrogenation of graphite has recently attracted renewed attention, as a route for nano-patterning of graphene and to produce graphene nano-ribbons. These reports show that metallic nanoparticles etch surface layers of graphite, or graphene anisotropically along the crystallographic zigzag <11-20> or armchair <1010> directions. On graphene the etching direction can be influenced by exter… ▽ More Catalytic hydrogenation of graphite has recently attracted renewed attention, as a route for nano-patterning of graphene and to produce graphene nano-ribbons. These reports show that metallic nanoparticles etch surface layers of graphite, or graphene anisotropically along the crystallographic zigzag <11-20> or armchair <1010> directions. On graphene the etching direction can be influenced by external magnetic fields or the substrate. Here we report the sub-surface etching of highly oriented pyrolytic graphite (HOPG) by Ni nanoparticles, to form a network of tunnels, as seen by SEM and STM. In this new nanoporous form of graphite, the top layers bend inward on top of the tunnels, while their local density of states remains fundamentally unchanged. Engineered nanoporous tunnel networks in graphite allow further chemical modification and may find applications in storage or sensing. △ Less

Submitted 6 July, 2012; originally announced July 2012.