Showing 1–2 of 2 results for author: Afzal, W
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Observation of large intrinsic anomalous Hall conductivity in polycrystalline Mn$_3$Sn films
Authors:
W. AfzaL,
Z. Yue,
Z. Li,
M. Fuhrer,
X. Wang
Abstract:
We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($Ω$cm)$^{-1}$ at 3K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment in this material. The longitudinal resistivity decreases sufficiently for the thin films as comp…
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We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($Ω$cm)$^{-1}$ at 3K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment in this material. The longitudinal resistivity decreases sufficiently for the thin films as compared to the polycrystalline bulk sample used as the target for the film deposition. The anomalous Hall resistivity and conductivity decreases almost linearly with the increase in the temperature. A negative magnetoresistance is observed for all the measured temperatures with the negative decrease in the magnitude with the increase in temperature.
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Submitted 19 July, 2023;
originally announced July 2023.
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Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations
Authors:
W. Afzal,
F. Yun,
Z. Li,
Z. Yue,
W. Zhao,
L. Sang,
G. Yang,
Y. He,
G. Peleckis,
M. Fuhrer,
X. Wang
Abstract:
We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperature…
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We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi$_2$ thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.
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Submitted 19 July, 2023;
originally announced July 2023.
