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Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs
Authors:
C. A. Paz de Araujo,
Jolanta Celinska,
Chris R. McWilliams,
Lucian Shifren,
Greg Yeric,
X. M. Henry Huang,
Saurabh Vinayak Suryavanshi,
Glen Rosendale,
Valeri Afanas'ev,
Eduardo C. Marino,
Dushyant Madhav Narayan,
Daniel S Dessau
Abstract:
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. O…
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Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. Our findings indicate new insights for yet to be understood unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown that device switching is not thermal-energy dependent and have developed an electronic-dominated switching model that allows for the extreme temperature operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour bake. Importantly, we have optimized the technology in an industrial process and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns write pulses and retain the memory states up to 200 C for 24 hours. The collection of attributes shown, including scalability to state-of-the-art dimensions, non-volatile operation to extreme low and high temperatures, fast write, and reduced stochasticity as compared to filamentary memories such as ReRAMs show the potential for a highly capable two-terminal back-end-of-line non-volatile memory.
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Submitted 15 April, 2022;
originally announced April 2022.
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Hole-do** induced ferromagnetism in 2D materials
Authors:
R. Meng,
L. M. C. Pereira,
J. P. Locquet,
V. V. Afanas'ev,
G. Pourtois,
M. Houssa
Abstract:
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole do**. A global evolutionary search is subsequ…
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Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole do**. A global evolutionary search is subsequently performed, in order to identify alternative possible atomic structures of the eligible candidates, and 122 materials exhibiting a hole-do** induced ferromagnetism are identified. Their energetic and dynamic stability, as well as their magnetic properties under hole do** are investigated systematically. Half of these 2D materials are metal halides, followed by chalcogenides, oxides and nitrides, some of them having predicted Curie temperatures above 300 K. The exchange interactions responsible for the ferromagnetic order in these 2D materials are also discussed. This work not only provides theoretical insights into hole-doped 2D ferromagnetic materials, but also enriches the family of 2D magnetic materials for possible spintronic applications.
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Submitted 5 April, 2022; v1 submitted 4 April, 2022;
originally announced April 2022.
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On the origin of supertetragonality in BaTiO$_3$
Authors:
Simon Mellaerts,
** Won Seo,
Valeri Afanas'ev,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ra…
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Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ratio of $\sim1.3$. The microscopic origin and driving mechanisms of this phase transition are identified as a drastic change of the covalently $π$-bonded electrons. These findings provide guidance in the search for new supertetragonal phases, with great opportunities for novel multiferroic materials; and can be generalized in the understanding of other isosymmetric phase transitions.
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Submitted 19 January, 2022;
originally announced January 2022.
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A Comparison between Monte Carlo Method and the Numerical Solution of the Ambartsumian-Chandrasekhar Equations to Unravel the Dielectric Response of Metals
Authors:
Martina Azzolini,
Olga Yu. Ridzel,
Pavel S. Kaplya,
Viktor Afanas'ev,
Nicola M. Pugno,
Simone Taioli,
Maurizio Dapor
Abstract:
In this work we describe two different models for interpreting and predicting Reflection Electron Energy Loss (REEL) spectra and we present results of a study on metallic systems comparing the computational cost and the accuracy of these techniques. These approaches are the Monte Carlo (MC) method and the Numerical Solution (NS) of the Ambartsumian-Chandrasekhr equations. The former is based on a…
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In this work we describe two different models for interpreting and predicting Reflection Electron Energy Loss (REEL) spectra and we present results of a study on metallic systems comparing the computational cost and the accuracy of these techniques. These approaches are the Monte Carlo (MC) method and the Numerical Solution (NS) of the Ambartsumian-Chandrasekhr equations. The former is based on a statistical algorithm to sample the electron trajectories within the target material for describing the electron transport. The latter relies on the numerical solution of the Ambartsumian-Chandrasekhar equations using the invariant embedding method. Both methods receive the same input parameters to deal with the elastic and inelastic electron scattering. To test their respective capability to describe REEL experimental spectra, we use copper, silver, and gold as case studies. Our simulations include both bulk and surface plasmon contributions to the energy loss spectrum by using the effective electron energy loss functions and the relevant extensions to finite momenta. The agreement between MC and NS theoretical spectra with experimental data is remarkably good. Nevertheless, while we find that these approaches are comparable in accuracy, the computational cost of NS is several orders of magnitude lower than the widely used MC. Inputs, routines and data are enclosed with this manuscript via the Mendeley database.
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Submitted 12 November, 2019;
originally announced November 2019.
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The origin of negative charging in amorphous Al$_2$O$_3$ films: The role of native defects
Authors:
Oliver A. Dicks,
Jonathon Cottom,
Alexander L. Shluger,
Valeri V. Afanas'ev
Abstract:
Amorphous aluminum oxide Al$_2$O$_3$ (a-Al$_2$O$_3$) layers grown by various deposition techniques contain a significant density of negative charges. In spite of several experimental and theoretical studies, the origin of these charges still remains unclear. We report the results of extensive Density Functional Theory (DFT) calculations of native defects - O and Al vacancies and interstitials, as…
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Amorphous aluminum oxide Al$_2$O$_3$ (a-Al$_2$O$_3$) layers grown by various deposition techniques contain a significant density of negative charges. In spite of several experimental and theoretical studies, the origin of these charges still remains unclear. We report the results of extensive Density Functional Theory (DFT) calculations of native defects - O and Al vacancies and interstitials, as well as H interstitial centers - in different charge states in both crystalline $α$-Al$_2$O$_3$ and in a-Al$_2$O$_3$. The results demonstrate that both the charging process and the energy distribution of traps responsible for negative charging of a-Al$_2$O$_3$ films [M. B. Zahid et al., IEEE Trans. Electron Devices 57, 2907 (2010)] can be understood assuming that the negatively charged O$_{\textrm{i}}$ and V$_{\textrm{Al}}$ defects are nearly compensated by the positively charged H$_{\textrm{i}}$, V$_{\textrm{O}}$ and Al$_{\textrm{i}}$ defects in as prepared samples. Following electron injection, the states of Al$_{\textrm{i}}$, V$_{\textrm{O}}$ or H$_{\textrm{i}}$ in the band gap become occupied by electrons and sample becomes negatively charged. The optical excitation energies from these states into the oxide conduction band agree with the results of exhaustive photo-depopulation spectroscopy (EPDS) measurements [M. B. Zahid et al., IEEE Trans. Electron Devices 57, 2907 (2010)]. This new understanding of the origin of negative charging of a-Al$_2$O$_3$ films is important for further development of nanoelectronic devices and solar cells.
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Submitted 4 March, 2019; v1 submitted 1 November, 2018;
originally announced November 2018.
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Impact of nitrogen incorporation on interface states in (100)Si/HfO2
Authors:
Y. G. Fedorenko,
L. Truong,
V. V. Afanas'ev,
A. Stesmans,
Z. Zhang,
S. A. Campbell
Abstract:
The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorp…
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The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorporation prevents passivation of interface traps by hydrogen. At the same time, passivation of fast interface traps in the lower part of the band gap proceeds efficiently, provided the thickness of the nitrogen containing interlayer is kept within a few monolayers. The minimal interface trap density below the midgap achieved after passivation in H2 is dominated by the presence of slow N-related states, likely located in the insulator. As inferred from capacitance-voltage and ac conductance analysis, the lowest density of electrically active defects [(8-9)x10 10 eV-1cm-2 at 0.4-0.5 eV from the top of the Si valence band edge] is achieved both in the N-free and N-containing (100)Si/HfO2 structuresafter post-deposition anneal at 800C in (N2+5%O2) followed by passivation in molecular hydrogen at 400C for 30 min.
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Submitted 25 June, 2014;
originally announced June 2014.
