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Chirality-Induced Magnet-Free Spin Generation in a Semiconductor
Authors:
Tianhan Liu,
Yuwaraj Adhikari,
Hailong Wang,
Yiyang Jiang,
Zhenqi Hua,
Haoyang Liu,
Pedro Schlottmann,
Hanwei Gao,
Paul S. Weiss,
Binghai Yan,
Jianhua Zhao,
Peng Xiong
Abstract:
Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay o…
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Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), we demonstrate efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer of chiral molecules (α-helix L-polyalanine, AHPA-L). The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional semiconductor. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free semiconductor spintronics.
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Submitted 27 March, 2024;
originally announced March 2024.
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Interplay of Structural Chirality, Electron Spin and Topological Orbital in Chiral Molecular Spin Valves
Authors:
Yuwaraj Adhikari,
Tianhan Liu,
Hailong Wang,
Zhenqi Hua,
Haoyang Liu,
Eric Lochner,
Pedro Schlottmann,
Binghai Yan,
Jianhua Zhao,
Peng Xiong
Abstract:
Chirality has been a property of central importance in chemistry and biology for more than a century, and is now taking on increasing relevance in condensed matter physics. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application pot…
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Chirality has been a property of central importance in chemistry and biology for more than a century, and is now taking on increasing relevance in condensed matter physics. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive. In this work, via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting strengths of spin-orbit coupling (SOC), we unambiguously identified the origin of the SOC, a necessity for the CISS effect, given the negligible SOC in organic molecules. The experiments revealed that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure to spin polarization. Our results evidence the essential role of SOC in the metal electrode for engendering the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior. This work hence produces critical new insights on the microscopic mechanism of CISS, and more broadly, reveals a fundamental relation between structure chirality, electron spin, and orbital.
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Submitted 16 September, 2022;
originally announced September 2022.
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Layered, Tunable Graphene Oxide-Nylon Heterostructures for Wearable Electrocardiogram Sensors
Authors:
Nicholas G. Hallfors,
Dejan Maksimovski,
Ilyas A. H. Farhat,
Maguy Abi Jaoude,
Aarthi R. Devarajan,
Kin Liao,
Mohammed Ismail,
H. Pade,
R. Y. Adhikari,
Abdel F. Isakovic
Abstract:
Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scannin…
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Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scanning electron (SEM) and atomic force microscopy (AFM) shows a limited number of defects on a macroscopic scale. Fourier Transform Infrared (FTIR) and Raman spectroscopy confirm the presence of rGOx, and the ratio of D- and G-features as a function of thickness correlates with the resistivity analysis. The negligible effect of the defects and the tunability of electrical and optical properties, together with live ECG data, demonstrate its signal transduction capability.
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Submitted 2 August, 2022; v1 submitted 26 September, 2021;
originally announced September 2021.
