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Skipper-in-CMOS: Non-Destructive Readout with Sub-Electron Noise Performance for Pixel Detectors
Authors:
Agustin J. Lapi,
Miguel Sofo-Haro,
Benjamin C. Parpillon,
Adi Birman,
Guillermo Fernandez-Moroni,
Lorenzo Rota,
Fabricio Alcalde Bessia,
Aseem Gupta,
Claudio Chavez Blanco,
Fernando Chierchie,
Julie Segal,
Christopher J. Kenney,
Angelo Dragone,
Shaorui Li,
Davide Braga,
Amos Fenigstein,
Juan Estrada,
Farah Fahim
Abstract:
The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtai…
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The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a 15 x 15 um^2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor's commercial 180 nm CMOS Image Sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep sub-electron noise of 0.15rms e-, demonstrating the charge transfer operation from the pinned photodiode and the single photon counting operation when the sensor is exposed to light. The article also discusses new testing strategies employed for its operation and characterization.
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Submitted 19 February, 2024;
originally announced February 2024.
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GAMPix: a novel fine-grained, low-noise and ultra-low power pixelated charge readout for TPCs
Authors:
Tom Shutt,
Bahrudin Trbalic,
Aldo Pena-Perez,
Steffen Luitz,
Mark Convery,
Angelo Dragone,
Lorenzo Rota,
Dietrich R. Freytag,
Dionisio Doering,
Filippo Mele,
Miriam Moore,
Hiro Tanaka,
Yun-Tse Tsai
Abstract:
We report on the development of a novel pixel charge readout system, Grid Activated Multi-scale pixel readout (GAMPix), which is under development for use in the GammaTPC gamma ray instrument concept. GammaTPC is being developed to optimize the use of liquid argon time projection chamber technology for gamma ray astrophysics, for which a fine grained low power charge readout is essential. GAMPix u…
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We report on the development of a novel pixel charge readout system, Grid Activated Multi-scale pixel readout (GAMPix), which is under development for use in the GammaTPC gamma ray instrument concept. GammaTPC is being developed to optimize the use of liquid argon time projection chamber technology for gamma ray astrophysics, for which a fine grained low power charge readout is essential. GAMPix uses a new architecture with coarse and fine scale instrumented electrodes to solve the twin problems of loss of measured charge after diffusion, and high readout power. Fundamentally, it enables low noise and ultra low power charge readout at the spatial scale limited by diffusion in a time projection chamber, and has other possibly applications, including future DUNE modules.
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Submitted 31 January, 2024;
originally announced February 2024.
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Characterization of the Hamamatsu VUV4 MPPCs for nEXO
Authors:
G. Gallina,
P. Giampa,
F. Retiere,
J. Kroeger,
G. Zhang,
M. Ward,
P. Margetak,
G. Lic,
T. Tsang,
L. Doria,
S. Al Kharusi,
M. Alfaris,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
J. Blatchford,
J. P. Brodsky,
E. Brown,
T. Brunner,
G. F. Cao,
L. Cao
, et al. (126 additional authors not shown)
Abstract:
In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency…
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In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.
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Submitted 7 June, 2019; v1 submitted 8 March, 2019;
originally announced March 2019.
