Showing 1–50 of 55 results for author: van der Wal, C H

Quantum communication networks with defects in silicon carbide

Authors: Sebastian Ecker, Matthias Fink, Thomas Scheidl, Philipp Sohr, Rupert Ursin, Muhammad Junaid Arshad, Cristian Bonato, Pasquale Cilibrizzi, Adam Gali, Péter Udvarhelyi, Alberto Politi, Oliver J. Trojak, Misagh Ghezellou, Jawad Ul Hassan, Ivan G. Ivanov, Nguyen Tien Son, Guido Burkard, Benedikt Tissot, Joop Hendriks, Carmem M. Gilardoni, Caspar H. van der Wal, Christian David, Thomas Astner, Philipp Koller, Michael Trupke

Abstract: Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity… ▽ More Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Comments: 20 pages, 8 figures

Charge dynamics in the 2D/3D semiconductor heterostructure WSe$_2$/GaAs

Authors: Rafael R. Rojas-Lopez, Freddie Hendriks, Caspar H. van der Wal, Paulo S. S. Guimarães, Marcos H. D. Guimarães

Abstract: Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for develo** efficient optical and (opto)electronic devices which integrate new 2D materials with more conventional 3D ones. In this work, we unveil the carrier dynamics and charge transfer in a monolayer of WSe$_2$ on a GaAs substra… ▽ More Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for develo** efficient optical and (opto)electronic devices which integrate new 2D materials with more conventional 3D ones. In this work, we unveil the carrier dynamics and charge transfer in a monolayer of WSe$_2$ on a GaAs substrate. We use time-resolved differential reflectivity to study the charge relaxation processes involved in the junction and how they change when compared to an electrically decoupled heterostructure, WSe$_2$/hBN/GaAs. We observe that the monolayer in direct contact with the GaAs substrate presents longer optically-excited carrier lifetimes (3.5 ns) when compared with the hBN-isolated region (1 ns), consistent with a strong reduction of radiative decay and a fast charge transfer of a single polarity. Through low-temperature measurements, we find evidence of a type-II band alignment for this heterostructure with an exciton dissociation that accumulates electrons in the GaAs and holes in the WSe$_2$. The type-II band alignment and fast photo-excited carrier dissociation shown here indicate that WSe$_2$/GaAs is a promising junction for new photovoltaic and other optoelectronic devices, making use of the best properties of new (2D) and conventional (3D) semiconductors. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 6 pages, 4 Figures

Magnetic field control of light-induced spin accumulation in monolayer MoSe$_2$

Authors: Rafael R. Rojas-Lopez, Freddie Hendriks, Caspar H. van der Wal, Paulo S. S. Guimarães, Marcos H. D. Guimarães

Abstract: Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K$_+$ an… ▽ More Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K$_+$ and K$_-$ valleys. Here, we use time-resolved Kerr rotation to study the magnetic field dependence of the spin dynamics in monolayer MoSe$_2$. We show that the magnetic field can control the light-induced spin accumulation of the two valley states, with a small effect on the recombination lifetimes. We unveil that the magnetic field-dependent spin accumulation is in agreement with hole spin dynamics at the longer timescales, indicating that the electron spins have faster relaxation rates. We propose a rate equation model that suggests that lifting the energy-degeneracy of the valleys induces an ultrafast spin-flip toward the stabilization of the valley with the higher valence band energy. Our results provide an experimental insight into the ultrafast charge and spin dynamics in TMDs and a way to control it, which will be useful for the development of new spintronic and valleytronic applications. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 6 pages, 4 figures

Journal ref: IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 2D Mater. 10 035013 (2023)

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Authors: Joop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht, Caspar H. van der Wal

Abstract: Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with much stronger energy scales for spin-orbit and hyperfine coupling, but how this affects their spin coherence is little explored. Vanadium in silicon… ▽ More Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with much stronger energy scales for spin-orbit and hyperfine coupling, but how this affects their spin coherence is little explored. Vanadium in silicon carbide is such a system, with technological interest for its optical emission at a telecom wavelength and compatibility with semiconductor industry. Here we show coherent spin dynamics of an ensemble of vanadium defects around a clock-transition, studied while isolated from, or coupled to neighbouring nuclear spins. We find spin dephasing times up to 7.2 $μ$s, and via spin-echo studies coherence lifetimes that go well beyond tens of microseconds. We demonstrate operation points where strong coupling to neighbouring nuclear spins does not compromise the coherence of the central vanadium spin, which identifies how these can be applied as a coherent spin register. Our findings are relevant for understanding a wide class of defects with similar energy scales and crystal symmetries, that are currently explored in diamond, silicon carbide, and hexagonal boron nitride. △ Less

Submitted 18 October, 2022; originally announced October 2022.

Comments: 11 pages, 4 figures, 1 table

Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

Authors: T. Astner, P. Koller, C. M. Gilardoni, J. Hendriks, N. T. Son, I. G. Ivanov, J. U. Hassan, C. H. van der Wal, M. Trupke

Abstract: Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadiu… ▽ More Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25s at 100mK, and of order 1s at 1.3K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems' hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC. △ Less

Submitted 13 June, 2022; originally announced June 2022.

Comments: 9 pages, 3 figures

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Authors: Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni, Xu Yang, Alexander R. Onur, Takeshi Ohshima, Nguyen T. Son, Caspar H. van der Wal

Abstract: Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (near-)homogeneous ensemble of three-level systems, in which two low-energy spin-1/2 levels are coupled to a common optically excited state. We investig… ▽ More Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (near-)homogeneous ensemble of three-level systems, in which two low-energy spin-1/2 levels are coupled to a common optically excited state. We investigate the implementation of EIT with c-axis divacancy color centers in silicon carbide. While this material has attractive properties for quantum device technologies with near-IR optics, implementing EIT is complicated by the inhomogeneous broadening of the optical transitions throughout the ensemble and the presence of multiple ground-state levels. These may lead to darkening of the ensemble upon resonant optical excitation. Here, we show that EIT can be established with high visibility also in this material platform upon careful design of the measurement geometry. Comparison of our experimental results with a model based on the Lindblad equations indicates that we can create coherences between different sets of two levels all-optically in these systems, with potential impact for RF-free quantum sensing applications. Our work provides an understanding of EIT in multi-level systems with significant inhomogeneities, and our considerations are valid for a wide array of defects in semiconductors. △ Less

Submitted 18 March, 2022; originally announced March 2022.

Comments: 9 pages, 5 figures

Journal ref: Journal of Applied Physics 131, 094401 (2022)

Broadband single-mode planar waveguides in monolithic 4H-SiC

Authors: Tom Bosma, Joop Hendriks, Misagh Ghezellou, Nguyen T. Son, Jawad Ul-Hassan, Caspar H. van der Wal

Abstract: Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavit… ▽ More Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide. △ Less

Submitted 22 February, 2022; originally announced February 2022.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131, 025703 (2022) and may be found at https://aip.scitation.org/doi/10.1063/5.0077164

Journal ref: Journal of Applied Physics 131, 025703 (2022)

Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC

Authors: Carmem M. Gilardoni, Irina Ion, Freddie Hendriks, Michael Trupke, Caspar H. van der Wal

Abstract: Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transit… ▽ More Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transitions, giving rise to defect spins that are long lived, but hard to address via microwave spin manipulation. Here, we show via analytical and numerical results that the presence of a central nuclear spin can lead to a non-trivial mixing of electronic spin states, while preserving the defect symmetry. The interplay between a small applied magnetic field and hyperfine coupling opens up magnetic microwave transitions that are forbidden in the absence of hyperfine coupling, enabling efficient manipulation of the electronic spin. We also find that an electric microwave field parallel to the c-axis can be used to manipulate the electronic spin via modulation of the relative strength of the dipolar hyperfine term. △ Less

Submitted 2 September, 2021; v1 submitted 26 April, 2021; originally announced April 2021.

Comments: 17 pages, 3 figures

Journal ref: New J. of Physics, 23 (2021) 083010

Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides

Authors: Carmem M. Gilardoni, Freddie Hendriks, Caspar H. van der Wal, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we p… ▽ More Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different mechanisms that play a role in these systems. We show that, in monolayer TMDs, electrons and holes transform fundamentally differently -- leading to distinct spin-scattering processes. We find that one of the electronic states in the conduction band is partially protected by time-reversal symmetry, indicating a longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden spin-polarization can exist within each layer despite the presence of global inversion symmetry. We show that this feature enables control of the interlayer spin-flip** scattering processes via an out-of-plane electric field, providing a mechanism for electrical control of the spin lifetime. △ Less

Submitted 22 February, 2021; v1 submitted 5 January, 2021; originally announced January 2021.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 103, 115410 (2021)

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Authors: Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimaraes

Abstract: Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-di… ▽ More Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Reply to "Comment on 'Spin-dependent electron transmission model for chiral molecules in mesoscopic devices'"

Authors: Xu Yang, Caspar H. van der Wal, Bart J. van Wees

Abstract: Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electrical measurement results obtained in the linear response regime and those obtained in the nonlinear regime. Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electrical measurement results obtained in the linear response regime and those obtained in the nonlinear regime. △ Less

Submitted 4 March, 2020; v1 submitted 25 February, 2020; originally announced February 2020.

Journal ref: Physical Review B 101 (2), 026404 (2020)

Detecting chirality in two-terminal electronic devices

Authors: Xu Yang, Caspar H. van der Wal, Bart J. van Wees

Abstract: Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic devices containing a chiral (molecular) component and a ferromagnet. However, fundamental understanding of when and how this MR can occur is lacking. H… ▽ More Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic devices containing a chiral (molecular) component and a ferromagnet. However, fundamental understanding of when and how this MR can occur is lacking. Here, we uncover an elementary mechanism that generates such a MR for nonlinear response. It requires energy-dependent transport and energy relaxation within the device. The sign of the MR depends on chirality, charge carrier type, and bias direction. Additionally, we reveal how CISS can be detected in the linear response regime in magnet-free 2T devices, either by forming a chirality-based spin-valve using two or more chiral components, or by Hanle spin precession in devices with a single chiral component. Our results provide operation principles and design guidelines for chirality-based spintronic devices and technologies. △ Less

Submitted 5 March, 2020; v1 submitted 19 December, 2019; originally announced December 2019.

Journal ref: Nano Letters, 20, 8, 6148-6154 (2020)

Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Authors: Carmem M. Gilardoni, Tom Bosma, Danny van Hien, Freddie Hendriks, Björn Magnusson, Alexandre Ellison, Ivan G. Ivanov, N. T. Son, Caspar H. van der Wal

Abstract: Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spi… ▽ More Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K. △ Less

Submitted 10 December, 2019; originally announced December 2019.

Journal ref: New Journal of Physics, 22 (2020)

Circuit-Model Analysis for Spintronic Devices with Chiral Molecules as Spin Injectors

Authors: Xu Yang, Tom Bosma, Bart J. van Wees, Caspar H. van der Wal

Abstract: Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work studied hybrid spintronic devices with conventional electronic materials and chiral (bio)molecules. However, a theoretical foundation for the CISS effect is still in development and the spintronic signals were not evaluated… ▽ More Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work studied hybrid spintronic devices with conventional electronic materials and chiral (bio)molecules. However, a theoretical foundation for the CISS effect is still in development and the spintronic signals were not evaluated quantitatively. We present a circuit-model approach that can provide quantitative evaluations. Our analysis assumes the scheme of a recent experiment that used photosystem~I (PSI) as spin injectors, for which we find that the experimentally observed signals are, under any reasonable assumptions on relevant PSI time scales, too high to be fully due to the CISS effect. We also show that the CISS effect can in principle be detected using the same type of solid-state device, and by replacing silver with graphene, the signals due to spin generation can be enlarged four orders of magnitude. Our approach thus provides a generic framework for analyzing this type of experiments and advancing the understanding of the CISS effect. △ Less

Submitted 7 June, 2019; v1 submitted 5 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 214428 (2019)

Semiconductor channel mediated photodo** in h-BN encapsulated monolayer MoSe2 phototransistors

Authors: Jorge Quereda, Talieh S. Ghiasi, Caspar H. van der Wal, Bart J. van Wees

Abstract: In optically excited two-dimensional phototransistors, charge transport is often affected by photodo** effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that they can be used to controllably tune the charge neutrality point of graphene. In this work we investigate how this technique can be extended to h BN encapsulated… ▽ More In optically excited two-dimensional phototransistors, charge transport is often affected by photodo** effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that they can be used to controllably tune the charge neutrality point of graphene. In this work we investigate how this technique can be extended to h BN encapsulated monolayer MoSe_2 phototransistors at room temperature. By exposing the sample to 785 nm laser excitation we can controllably increase the charge carrier density of the MoSe_2 channel by Δn {\approx} 4.45 {\times} 10^{12} cm^{-2}, equivalent to applying a back gate voltage of 60 V. We also evaluate the efficiency of photodo** at different illumination wavelengths, finding that it is strongly correlated with the light absorption by the MoSe_2 layer, and maximizes for excitation on-resonance with the A exciton absorption. This indicates that the photodo** process involves optical absorption by the MoSe_2 channel, in contrast with the mechanism earlier described for graphene/h-BN heterostroctures. △ Less

Submitted 5 March, 2019; originally announced March 2019.

CT synthesis from MR images for orthopedic applications in the lower arm using a conditional generative adversarial network

Authors: Frank Zijlstra, Koen Willemsen, Mateusz C. Florkow, Ralph J. B. Sakkers, Harrie H. Weinans, Bart C. H. van der Wal, Marijn van Stralen, Peter R. Seevinck

Abstract: Purpose: To assess the feasibility of deep learning-based high resolution synthetic CT generation from MRI scans of the lower arm for orthopedic applications. Methods: A conditional Generative Adversarial Network was trained to synthesize CT images from multi-echo MR images. A training set of MRI and CT scans of 9 ex vivo lower arms was acquired and the CT images were registered to the MRI image… ▽ More Purpose: To assess the feasibility of deep learning-based high resolution synthetic CT generation from MRI scans of the lower arm for orthopedic applications. Methods: A conditional Generative Adversarial Network was trained to synthesize CT images from multi-echo MR images. A training set of MRI and CT scans of 9 ex vivo lower arms was acquired and the CT images were registered to the MRI images. Three-fold cross-validation was applied to generate independent results for the entire dataset. The synthetic CT images were quantitatively evaluated with the mean absolute error metric, and Dice similarity and surface to surface distance on cortical bone segmentations. Results: The mean absolute error was 63.5 HU on the overall tissue volume and 144.2 HU on the cortical bone. The mean Dice similarity of the cortical bone segmentations was 0.86. The average surface to surface distance between bone on real and synthetic CT was 0.48 mm. Qualitatively, the synthetic CT images corresponded well with the real CT scans and partially maintained high resolution structures in the trabecular bone. The bone segmentations on synthetic CT images showed some false positives on tendons, but the general shape of the bone was accurately reconstructed. Conclusions: This study demonstrates that high quality synthetic CT can be generated from MRI scans of the lower arm. The good correspondence of the bone segmentations demonstrates that synthetic CT could be competitive with real CT in applications that depend on such segmentations, such as planning of orthopedic surgery and 3D printing. △ Less

Submitted 24 January, 2019; originally announced January 2019.

Comments: This work has been accepted at the SPIE Medical Imaging 2019, Image Processing conference, paper 10949-54

Evolution of atomic optical selection rules upon gradual symmetry lowering

Authors: G. J. J. Lof, C. H. van der Wal, R. W. A. Havenith

Abstract: For atoms and crystals with an ideal symmetry, the optical selection rules for electronic transitions are well covered in physics textbooks. However, in studies of material systems one often encounters systems with a weakly distorted symmetry. Insight and intuition for how optical selection rules change when an ideal symmetry is gradually distorted is, nevertheless, little addressed in literature.… ▽ More For atoms and crystals with an ideal symmetry, the optical selection rules for electronic transitions are well covered in physics textbooks. However, in studies of material systems one often encounters systems with a weakly distorted symmetry. Insight and intuition for how optical selection rules change when an ideal symmetry is gradually distorted is, nevertheless, little addressed in literature. We present here a detailed analysis of how a gradual symmetry distortion leads to a complete alteration of optical selection rules. As a model system, we consider the transitions between $1s$ and $2p$ sublevels of the hydrogen atom, which get distorted by placing charged particles in its environment. Upon increasing the distortion, part of the optical selection rules evolve from circular via elliptical to linear character, with an associated evolution between allowed and forbidden transitions. Our presentation combines an analytical approach with quantitative results from numerical simulations, thus providing insight in how the evolution occurs as a function of the strength of the distortion. △ Less

Submitted 15 October, 2018; originally announced October 2018.

Comments: Main text and suppl. info

Spin-Dependent Electron Transmission Model for Chiral Molecules in Mesoscopic Devices

Authors: Xu Yang, Caspar H. van der Wal, Bart J. van Wees

Abstract: Various device-based experiments have indicated that electron transfer in certain chiral molecules may be spin-dependent, a phenomenon known as the Chiral Induced Spin Selectivity (CISS) effect. However, due to the complexity of these devices and a lack of theoretical understanding, it is not always clear to what extent the chiral character of the molecules actually contributes to the magnetic-fie… ▽ More Various device-based experiments have indicated that electron transfer in certain chiral molecules may be spin-dependent, a phenomenon known as the Chiral Induced Spin Selectivity (CISS) effect. However, due to the complexity of these devices and a lack of theoretical understanding, it is not always clear to what extent the chiral character of the molecules actually contributes to the magnetic-field-dependent signals in these experiments. To address this issue, we report here an electron transmission model that evaluates the role of the CISS effect in two-terminal and multi-terminal linear-regime electron transport experiments. Our model reveals that for the CISS effect, the chirality-dependent spin transmission is accompanied by a spin-flip electron reflection process. Furthermore, we show that more than two terminals are required in order to probe the CISS effect in the linear regime. In addition, we propose two types of multi-terminal nonlocal transport measurements that can distinguish the CISS effect from other magnetic-field-dependent signals. Our model provides an effective tool to review and design CISS-related transport experiments, and to enlighten the mechanism of the CISS effect itself. △ Less

Submitted 21 January, 2019; v1 submitted 5 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 024418 (2019)

Symmetry regimes for circular photocurrents in monolayer MoSe2

Authors: Jorge Quereda, Talieh S. Ghiasi, Jhih-Shih You, Jeroen van den Brink, Bart J. van Wees, Caspar H. van der Wal

Abstract: In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPC) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characte… ▽ More In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPC) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution. △ Less

Submitted 30 March, 2018; v1 submitted 22 March, 2018; originally announced March 2018.

Journal ref: Nature Communications volume 9, Article number: 3346 (2018)

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Authors: Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni, Olger V. Zwier, Freddie Hendriks, Björn Magnusson, Alexandre Ellison, Andreas Gällström, Ivan G. Ivanov, N. T. Son, Remco W. A. Havenith, Caspar H. van der Wal

Abstract: Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside teleco… ▽ More Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin $S=1/2$ for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of $\sim$60 ns and inhomogeneous spin dephasing times of $\sim$0.3 $μ$s, establishing relevance for quantum spin-photon interfacing. △ Less

Submitted 3 October, 2018; v1 submitted 19 February, 2018; originally announced February 2018.

Comments: Updated version with minor correction, full Supplementary Information included

Journal ref: npj Quantum Information 4, 48 (2018)

Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy

Authors: Jorge Quereda, Talieh S. Ghiasi, Feitze A. van Zwol, Caspar H. van der Wal, Bart J. van Wees

Abstract: We investigate the excitonic transitions in single- and few-layer MoSe2 phototransistors by photocurrent spectroscopy. The measured spectral profiles show a well-defined peak at the optically active (bright) A0 exciton resonance. More interestingly, when a gate voltage is applied to the MoSe2 to bring its Fermi level near the bottom of the conduction band, another prominent peak emerges at an ener… ▽ More We investigate the excitonic transitions in single- and few-layer MoSe2 phototransistors by photocurrent spectroscopy. The measured spectral profiles show a well-defined peak at the optically active (bright) A0 exciton resonance. More interestingly, when a gate voltage is applied to the MoSe2 to bring its Fermi level near the bottom of the conduction band, another prominent peak emerges at an energy 30 meV above the A0 exciton. We attribute this second peak to a gate-induced activation of the spin-forbidden dark exciton transition, AD0. Additionally, we evaluate the thickness-dependent optical bandgap of the fabricated MoSe2 crystals by characterizing their absorption edge. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Journal ref: Jorge Quereda et al 2018 2D Mater. 5 015004

Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trap** and dynamic nuclear polarization

Authors: A. R. Onur, J. P. de Jong, D. O'Shea, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We experimentally demonstrate how coherent population trap** (CPT) for donor-bound electron spins in GaAs results in autonomous feedback that prepares stabilized states for the spin polarization of nuclei around the electrons. CPT was realized by excitation with two lasers to a bound-exciton state. Transmission studies of the spectral CPT feature on an ensemble of electrons directly reveal the s… ▽ More We experimentally demonstrate how coherent population trap** (CPT) for donor-bound electron spins in GaAs results in autonomous feedback that prepares stabilized states for the spin polarization of nuclei around the electrons. CPT was realized by excitation with two lasers to a bound-exciton state. Transmission studies of the spectral CPT feature on an ensemble of electrons directly reveal the statistical distribution of prepared nuclear spin states. Tuning the laser driving from blue to red detuned drives a transition from one to two stable states. Our results have importance for ongoing research on schemes for dynamic nuclear spin polarization, the central spin problem and control of spin coherence. △ Less

Submitted 27 August, 2015; v1 submitted 19 January, 2015; originally announced January 2015.

Comments: 5 pages, 4 figures

All-optical coherent population trap** with defect spin ensembles in silicon carbide

Authors: Olger V. Zwier, Danny O'Shea, Alexander R. Onur, Caspar H. van der Wal

Abstract: Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing of spin states with the zero-phonon-line transitions. Our magneto-spectroscopy results identify the spin $S=1$ structure of the ground and excite… ▽ More Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing of spin states with the zero-phonon-line transitions. Our magneto-spectroscopy results identify the spin $S=1$ structure of the ground and excited state, and a role for decay via intersystem crossing. We use these results for demonstrating coherent population trap** of spin states with divacancy ensembles that have particular orientations in the SiC crystal. △ Less

Submitted 6 November, 2014; v1 submitted 5 November, 2014; originally announced November 2014.

Comments: 28 page document: Pages 1-14 main text (with 3 figures); pages 15-28 supplementary information (with 5 figues). v2 has minor corrections

Journal ref: Scientific Reports (NPG) 5, 10931 (2015)

Analysis of optical differential transmission signals from co-propagating fields in a lambda system medium

Authors: J. P. de Jong, A. R. Onur, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We analyze theoretically and experimentally how nonlinear differential-transmission spectroscopy of a lambda-system medium can provide quantitative understanding of the optical dipole moments and transition energies. We focus on the situation where two optical fields spatially overlap and co-propagate to a single detector. Nonlinear interactions give cross-modulation between a modulated and non-mo… ▽ More We analyze theoretically and experimentally how nonlinear differential-transmission spectroscopy of a lambda-system medium can provide quantitative understanding of the optical dipole moments and transition energies. We focus on the situation where two optical fields spatially overlap and co-propagate to a single detector. Nonlinear interactions give cross-modulation between a modulated and non-modulated laser field, yielding differential transmission signals. Our analysis shows how this approach can be used to enhance the visibility of relatively weak transitions, and how particular choices in the experimental design minimize systematic errors and the sensitivity to changes in laser field intensities. Experimentally, we demonstrate the relevance of our analysis with spectroscopy on the donor-bound exciton system of silicon donors in GaAs, where the transitions from the two bound-electron spin states to a bound-exciton state form a lambda system. Our approach is, however, of generic value for many spectroscopy experiments on solid-state systems in small cryogenic measurement volumes where in-situ frequency or polarization filtering of control and signal fields is often challenging. △ Less

Submitted 6 January, 2015; v1 submitted 26 September, 2014; originally announced September 2014.

Comments: 7 pages, 5 figures, version 2 has various improvements and small corrections, improved discussion

Two-laser dynamic nuclear polarization with semiconductor electrons: feedback, suppressed fluctuations, and bistability near two-photon resonance

Authors: Alexander R. Onur, Caspar H. van der Wal

Abstract: We present how optical coherent population trap** (CPT) of the spin of localized semiconductor electrons stabilizes the surrounding nuclear spin bath via the hyperfine interaction, resulting in a state which is more ordered than the thermal equilibrium state. We find distinct control regimes for different signs of laser detuning and examine the transition from an unpolarized, narrowed state to a… ▽ More We present how optical coherent population trap** (CPT) of the spin of localized semiconductor electrons stabilizes the surrounding nuclear spin bath via the hyperfine interaction, resulting in a state which is more ordered than the thermal equilibrium state. We find distinct control regimes for different signs of laser detuning and examine the transition from an unpolarized, narrowed state to a polarized state possessing a bistability. The narrowing of the state yields slower electron spin dephasing and self-improving CPT. Our analysis is relevant for a variety of solid state systems where hyperfine-induced dephasing is a limitation for using electron spin coherence. △ Less

Submitted 13 October, 2014; v1 submitted 26 September, 2014; originally announced September 2014.

Comments: 7 pages, 5 figures. Includes minor corrections and improved figures 2-4

Journal ref: Phys. Rev. B 98, 165304 (2018)

Robust recipe for low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

Authors: M. J. Iqbal, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In ord… ▽ More The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a robust recipe for contacts with very low resistance, with values that do not change significantly for annealing times between 20 and 350 sec, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts. △ Less

Submitted 17 July, 2014; originally announced July 2014.

Comments: 7 pages, 6 figures, 2 tables

Journal ref: Eur. Phys. J. Appl. Phys. 89, 20101 (2020) [version with minor updates]

Odd and even Kondo effects from emergent localisation in quantum point contacts

Authors: M. J. Iqbal, Roi Levy, E. J. Koop, J. B. Dekker, J. P. de Jong, J. H. M. van der Velde, D. Reuter, A. D. Wieck, R. Aguado, Yigal Meir, C. H. van der Wal

Abstract: A quantum point contact (QPC) is a very basic nano-electronic device: a short and narrow transport channel between two electron reservoirs. In clean channels electron transport is ballistic and the conductance $G$ is then quantised as a function of channel width with plateaus at integer multiples of $2e^2/h$ ($e$ is the electron charge and $h$ Planck's constant). This can be understood in a pictur… ▽ More A quantum point contact (QPC) is a very basic nano-electronic device: a short and narrow transport channel between two electron reservoirs. In clean channels electron transport is ballistic and the conductance $G$ is then quantised as a function of channel width with plateaus at integer multiples of $2e^2/h$ ($e$ is the electron charge and $h$ Planck's constant). This can be understood in a picture where the electron states are propagating waves, without need to account for electron-electron interactions. Quantised conductance could thus be the signature of ultimate control over nanoscale electron transport. However, even studies with the cleanest QPCs generically show significant anomalies on the quantised conductance traces and there is consensus that these result from electron many-body effects. Despite extensive experimental and theoretical studies understanding of these anomalies is an open problem. We report evidence that the many-body effects have their origin in one or more spontaneously localised states that emerge from Friedel oscillations in the QPC channel. Kondo physics will then also contribute to the formation of the many-body state with Kondo signatures that reflect the parity of the number of localised states. Evidence comes from experiments with length-tunable QPCs that show a periodic modulation of the many-body physics with Kondo signatures of alternating parity. Our results are of importance for assessing the role of QPCs in more complex hybrid devices and proposals for spintronic and quantum information applications. In addition, our results show that tunable QPCs offer a rich platform for investigating many-body effects in nanoscale systems, with the ability to probe such physics at the level of a single site. △ Less

Submitted 26 July, 2013; originally announced July 2013.

Comments: NOTE: 59 page document. Pages 1-17 main text (with 4 figures); pages 18-45 supplementary information; pages 46-59 example of full data set

Journal ref: Nature 501, 79 (2013)

Split-gate quantum point contacts with tunable channel length

Authors: M. J. Iqbal, J. P. de. Jong, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We report on develo** split-gate quantum point contacts (QPCs) that have a tunable length for the transport channel. The QPCs were realized in a GaAs/AlGaAs heterostructure with a two- dimensional electron gas (2DEG) below its surface. The conventional design uses 2 gate fingers on the wafer surface which deplete the 2DEG underneath when a negative gate voltage is applied, and this allows for tu… ▽ More We report on develo** split-gate quantum point contacts (QPCs) that have a tunable length for the transport channel. The QPCs were realized in a GaAs/AlGaAs heterostructure with a two- dimensional electron gas (2DEG) below its surface. The conventional design uses 2 gate fingers on the wafer surface which deplete the 2DEG underneath when a negative gate voltage is applied, and this allows for tuning the width of the QPC channel. Our design has 6 gate fingers and this provides additional control over the form of the electrostatic potential that defines the channel. Our study is based on electrostatic simulations and experiments and the results show that we developed QPCs where the effective channel length can be tuned from about 200 nm to 600 nm. Length-tunable QPCs are important for studies of electron many-body effects because these phenomena show a nanoscale dependence on the dimensions of the QPC channel. △ Less

Submitted 5 July, 2012; originally announced July 2012.

Journal ref: J. Appl. Phys. 113, 024507 (2013)

Ultrafast map** of optical polarization states onto spin coherence of localized electrons in a semiconductor

Authors: S. Z. Denega, M. Sladkov, D. Reuter, A. D. Wieck, T. L. C. Jansen, C. H. van der Wal

Abstract: We experimentally demonstrate an ultrafast method for preparing spin states of donor-bound electrons in GaAs with single laser pulses. Each polarization state of a preparation pulse has a direct map** onto a spin state, with bijective correspondence between the Poincaré-sphere (for photon polarization) and Bloch-sphere (for spin) state representations. The preparation is governed by a stimulated… ▽ More We experimentally demonstrate an ultrafast method for preparing spin states of donor-bound electrons in GaAs with single laser pulses. Each polarization state of a preparation pulse has a direct map** onto a spin state, with bijective correspondence between the Poincaré-sphere (for photon polarization) and Bloch-sphere (for spin) state representations. The preparation is governed by a stimulated Raman process and occurs orders of magnitude faster than the spontaneous emission and spin dephasing. Similar dynamics governs our ultrafast optical Kerr detection of the spin coherence, thus getting access to spin state tomography. Experiments with double preparation pulses show an additive character for the preparation method. Utilization of these phenomena is of value for quantum information schemes. △ Less

Submitted 11 April, 2011; v1 submitted 22 March, 2011; originally announced March 2011.

Comments: 5 pages, 4 figures (processed a few minor corrections)

Public exhibit for demonstrating the quantum of electrical conductance

Authors: E. H. Huisman, F. L. Bakker, J. P. van der Pal, R. M. de Jonge, C. H. van der Wal

Abstract: We present a new robust setup that explains and demonstrates the quantum of electrical conductance for a general audience and which is continuously available in a public space. The setup allows users to manually thin a gold wire of several atoms in diameter while monitoring its conductance in real time. During the experiment, a characteristic step-like conductance decrease due to rearrangements of… ▽ More We present a new robust setup that explains and demonstrates the quantum of electrical conductance for a general audience and which is continuously available in a public space. The setup allows users to manually thin a gold wire of several atoms in diameter while monitoring its conductance in real time. During the experiment, a characteristic step-like conductance decrease due to rearrangements of atoms in the cross-section of the wire is observed. Just before the wire breaks, a contact consisting of a single atom with a characteristic conductance close to the quantum of conductance can be maintained up to several seconds. The setup is operated full-time, needs practically no maintenance and is used on different educational levels. △ Less

Submitted 15 April, 2011; v1 submitted 18 March, 2011; originally announced March 2011.

Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field

Authors: Maksym Sladkov, M. P. Bakker, A. U. Chaubal, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We present the design and operation of a fiber-based cryogenic confocal microscope. It is designed as a compact cold-finger that fits inside the bore of a superconducting magnet, and which is a modular unit that can be easily swapped between use in a dilution refrigerator and other cryostats. We aimed at application in quantum optical experiments with electron spins in semiconductors and the desig… ▽ More We present the design and operation of a fiber-based cryogenic confocal microscope. It is designed as a compact cold-finger that fits inside the bore of a superconducting magnet, and which is a modular unit that can be easily swapped between use in a dilution refrigerator and other cryostats. We aimed at application in quantum optical experiments with electron spins in semiconductors and the design has been optimized for driving with, and detection of optical fields with well-defined polarizations. This was implemented with optical access via a polarization maintaining fiber together with Voigt geometry at the cold finger, which circumvents Faraday rotations in the optical components in high magnetic fields. Our unit is versatile for use in experiments that measure photoluminescence, reflection, or transmission, as we demonstrate with a quantum optical experiment with an ensemble of donor-bound electrons in a thin GaAs film. △ Less

Submitted 9 October, 2010; originally announced October 2010.

Comments: 9 pages, 7 figures

Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

Authors: Maksym Sladkov, A. U. Chaubal, M. P. Bakker, A. R. Onur, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We present measurements of electromagnetically induced transparency with an ensemble of donor- bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron spin dephasing time T* \approx 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also obs… ▽ More We present measurements of electromagnetically induced transparency with an ensemble of donor- bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron spin dephasing time T* \approx 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also observe signatures of dynamical nuclear polarization, but find these effects to be much weaker than in experiments that use electron spin resonance and related experiments with quantum dots. △ Less

Submitted 4 September, 2010; v1 submitted 6 July, 2010; originally announced July 2010.

Comments: 4 pages, 4 figures; Improved analysis of data in Fig. 3, corrected factors of 2 and pi

Journal ref: Phys. Rev. B 82, 121308(R) (2010)

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

Authors: S. Z. Denega, T. Last, J. Liu, A. Slachter, P. J. Rizo, P. H. M. van Loosdrecht, B. J. van Wees, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur… ▽ More We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer. △ Less

Submitted 15 April, 2010; v1 submitted 13 October, 2009; originally announced October 2009.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 81, 153302 (2010)

Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system

Authors: P. J. Rizo, A. Pugzlys, A. Slachter, S. Z. Denega, D. Reuter, A. D. Wieck, P. H. M. van Loosdrecht, C. H. van der Wal

Abstract: We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the Kerr rotation signals contain information from electron spins in three different layers: the 2DEG layer, a GaAs epilayer in the heterostructure, and the under… ▽ More We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the Kerr rotation signals contain information from electron spins in three different layers: the 2DEG layer, a GaAs epilayer in the heterostructure, and the underlying GaAs substrate. The 2DEG electrons can be observed at low pump intensities, using that they have a less negative g-factor than electrons in bulk GaAs regions. At high pump intensities, the Kerr signals from the GaAs epilayer and the substrate can be distinguished when using a barrier between the two layers that blocks intermixing of the two electron populations. This allows for stronger pum** of the epilayer, which results in a shift of the effective g-factor. Thus, three populations can be distinguished using differences in g-factor. We support this interpretation by studying how the spin dynamics of each population has its unique dependence on temperature, and how they correlate with time-resolved reflectance signals. △ Less

Submitted 9 October, 2009; originally announced October 2009.

Comments: 14 pages, 7 figures

Spin-dephasing anisotropy for electrons in a diffusive quasi-1D GaAs wire

Authors: J. Liu, T. Last, E. J. Koop, S. Denega, B. J. van Wees, C. H. van der Wal

Abstract: We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal strength of Rashba and linear Dresselhaus spin-orbit fields a strong suppression of spin-dephasing is found. This suppression of spin-dephasing shows a strong… ▽ More We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal strength of Rashba and linear Dresselhaus spin-orbit fields a strong suppression of spin-dephasing is found. This suppression of spin-dephasing shows a strong dependence on the wire orientation with respect to the crystal lattice. The relevance for realistic cases is evaluated by studying how this effect degrades for deviating strength of Rashba and linear Dresselhaus fields, and with the inclusion of the cubic Dresselhaus term. △ Less

Submitted 8 October, 2008; originally announced October 2008.

Electrical detection of spin pum**: dc voltage generated by ferromagnetic resonance at ferromagnet/nonmagnet contact

Authors: M. V. Costache, S. M. Watts, C. H. van der Wal, B. J. van Wees

Abstract: We describe electrical detection of spin pum** in metallic nanostructures. In the spin pum** effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the… ▽ More We describe electrical detection of spin pum** in metallic nanostructures. In the spin pum** effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the ferromagnet. The magnitude of such voltage is proportional to the spin-relaxation properties of the normal-metal. By using platinum as a contact material we observe, in agreement with theory, that the voltage is significantly reduced as compared to the case when aluminum was used. Furtheremore, the effects of rectification between the circulating rf currents and the magnetization precession of the ferromagnet are examined. Most significantly, we show that using an improved layout device geometry these effects can be minimized. △ Less

Submitted 23 September, 2008; originally announced September 2008.

Comments: 9 pages, 11 figures

Journal ref: Phys. Rev. B 78, 064423 (2008)

Compact cryogenic Kerr microscope for time-resolved studies of electron spin transport in microstructures

Authors: P. J. Rizo, A. Pugžlys, J. Liu, D. Reuter, A. D. Wieck, C. H. van der Wal, P. H. M. van Loosdrecht

Abstract: A compact cryogenic Kerr microscope for operation in the small volume of high-field magnets is described. It is suited for measurements both in Voigt and Faraday configuration. Coupled with a pulsed laser source, the microscope is used to measure the time-resolved Kerr rotation response of semiconductor microstructures with ~1 micron spatial resolution. The microscope was designed to study spin… ▽ More A compact cryogenic Kerr microscope for operation in the small volume of high-field magnets is described. It is suited for measurements both in Voigt and Faraday configuration. Coupled with a pulsed laser source, the microscope is used to measure the time-resolved Kerr rotation response of semiconductor microstructures with ~1 micron spatial resolution. The microscope was designed to study spin transport, a critical issue in the field of spintronics. It is thus possible to generate spin polarization at a given location on a microstructure and probe it at a different location. The operation of the microscope is demonstrated by time-resolved measurements of micrometer distance diffusion of spin polarized electrons in a GaAs/AlGaAs heterojunction quantum well at 4.2 K and 7 Tesla. △ Less

Submitted 18 September, 2008; originally announced September 2008.

The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Authors: E. J. Koop, M. J. Iqbal, F. Limbach, M. Boute, B. J. van Wees, D. Reuter, A. D. Wieck, B. J. Kooi, C. H. van der Wal

Abstract: Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy a… ▽ More Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure. △ Less

Submitted 5 September, 2008; originally announced September 2008.

Comments: 9 pages, 4 figures

Journal ref: Semicond. Sci. Technol. 28, 025006 (2013)

Confinement-enhanced spin relaxation for electron ensembles in large quantum dots

Authors: E. J. Koop, B. J. van Wees, C. H. van der Wal

Abstract: We present a numerical study of spin relaxation in a semiclassical electron ensemble in a large ballistic quantum dot. The dot is defined in a GaAs/AlGaAs heterojunction system with a two-dimensional electron gas, and relaxation occurs due to Dresselhaus and Rashba spin orbit interaction. We find that confinement in a micronscale dot can result in strongly enhanced relaxation with respect to a f… ▽ More We present a numerical study of spin relaxation in a semiclassical electron ensemble in a large ballistic quantum dot. The dot is defined in a GaAs/AlGaAs heterojunction system with a two-dimensional electron gas, and relaxation occurs due to Dresselhaus and Rashba spin orbit interaction. We find that confinement in a micronscale dot can result in strongly enhanced relaxation with respect to a free two-dimensional electron ensemble, contrary to the established result that strong confinement or frequent momentum scattering reduces relaxation. This effect occurs when the size of the system is on the order of the spin precession length, but smaller than the mean free path. △ Less

Submitted 18 April, 2008; originally announced April 2008.

Comments: 5 pages, 3 figures

Towards quantum optics and entanglement with electron spin ensembles in semiconductors

Authors: C. H. van der Wal, M. Sladkov

Abstract: We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside optical waveguides. Bringing the electron ensembles in a quantum Hall state gives selection rules fo… ▽ More We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside optical waveguides. Bringing the electron ensembles in a quantum Hall state gives selection rules for optical transitions across the gap that can selectively address the two electron spin states. Long-lived superpositions of these electron spin states can then be controlled with a pair of optical fields that form a resonant Raman system. Entangled states of spin-wave modes are prepared by applying quantum-optical measurement techniques to optical signal pulses that result from Raman transitions in the electron ensembles. △ Less

Submitted 18 April, 2008; originally announced April 2008.

Comments: Proceedings E-MRS 2007, session on solid-state quantum information, 7 pages, 3 figures

Journal ref: Solid State Sciences 11, 935 (2009) [special issue on Solid state approaches to quantum information processing and communication]

Spin Accumulation and Spin Relaxation in a Large Open Quantum Dot

Authors: E. J. Koop, B. J. van Wees, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective transport, with four contacts per dot for realizing a non-local spin-valve circuit. This provides an interesting system for studies of spintronic effects since the… ▽ More We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective transport, with four contacts per dot for realizing a non-local spin-valve circuit. This provides an interesting system for studies of spintronic effects since the contacts to reservoirs can be controlled and characterized with high accuracy. We show how this can be used to extract in a single measurement the relaxation time for electron spins inside the dot ~ 300 ps and the degree of spin polarization of the contacts P ~ 0.8. △ Less

Submitted 22 August, 2008; v1 submitted 17 January, 2008; originally announced January 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett 101, 056602 (2008)

The influence of device geometry on many-body effects in quantum point contacts: Signatures of the 0.7 anomaly, exchange and Kondo

Authors: E. J. Koop, A. I. Lerescu, J. Liu, B. J. van Wees, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: The conductance of a quantum point contact (QPC) shows several features that result from many-body electron interactions. The spin degeneracy in zero magnetic field appears to be spontaneously lifted due to the so-called 0.7 anomaly. Further, the g-factor for electrons in the QPC is enhanced, and a zero-bias peak in the conductance points to similarities with transport through a Kondo impurity.… ▽ More The conductance of a quantum point contact (QPC) shows several features that result from many-body electron interactions. The spin degeneracy in zero magnetic field appears to be spontaneously lifted due to the so-called 0.7 anomaly. Further, the g-factor for electrons in the QPC is enhanced, and a zero-bias peak in the conductance points to similarities with transport through a Kondo impurity. We report here how these many-body effects depend on QPC geometry. We find a clear relation between the enhanced g-factor and the subband spacing in our QPCs, and can relate this to the device geometry with electrostatic modeling of the QPC potential. We also measured the zero-field energy splitting related to the 0.7 anomaly, and studied how it evolves into a splitting that is the sum of the Zeeman effect and a field-independent exchange contribution when applying a magnetic field. While this exchange contribution shows sample-to-sample fluctuations and no clear dependence on QPC geometry, it is for all QPCs correlated with the zero-field splitting of the 0.7 anomaly. This provides evidence that the splitting of the 0.7 anomaly is dominated by this field-independent exchange splitting. Signatures of the Kondo effect also show no regular dependence on QPC geometry, but are possibly correlated with splitting of the 0.7 anomaly. △ Less

Submitted 2 October, 2007; v1 submitted 2 August, 2007; originally announced August 2007.

Comments: SpinTech IV contribution; new version contains additional wafer info and minor modifications to content

Journal ref: J. Supercond. Nov. Magn. 20, 433 (2007)

Persistence of the 0.7 anomaly of quantum point contacts in high magnetic fields

Authors: E. J. Koop, A. I. Lerescu, J. Liu, B. J. van Wees, D. Reuter, A. D. Wieck, C. H. van der Wal

Abstract: The spin degeneracy of the lowest subband that carries one-dimensional electron transport in quantum point contacts appears to be spontaneously lifted in zero magnetic field due to a phenomenon that is known as the 0.7 anomaly. We measured this energy splitting, and studied how it evolves into a splitting that is the sum of the Zeeman effect and a field-independent exchange contribution when app… ▽ More The spin degeneracy of the lowest subband that carries one-dimensional electron transport in quantum point contacts appears to be spontaneously lifted in zero magnetic field due to a phenomenon that is known as the 0.7 anomaly. We measured this energy splitting, and studied how it evolves into a splitting that is the sum of the Zeeman effect and a field-independent exchange contribution when applying a magnetic field. While this exchange contribution shows sample-to-sample fluctuations, it is for all QPCs correlated with the zero-field splitting of the 0.7 anomaly. This provides evidence that the splitting of the 0.7 anomaly is dominated by this field-independent exchange splitting. △ Less

Submitted 6 June, 2007; originally announced June 2007.

Comments: 5 pages, 4 figures

Journal ref: J. Supercond. Nov. Magn. 20, 433 (2007)

Non-local detection of resistance fluctuations of an open quantum dot

Authors: A. I. Lerescu, E. J. Koop, C. H. van der Wal, B. J. van Wees, J. H. Bardarson

Abstract: We investigate quantum fluctuations in the non-local resistance of an open quantum dot which is connected to four reservoirs via quantum point contacts. In this four-terminal quantum dot the voltage path can be separated from the current path. We measured non-local resistance fluctuations of several hundreds of Ohms, which have been characterized as a function of bias voltage, gate voltage and p… ▽ More We investigate quantum fluctuations in the non-local resistance of an open quantum dot which is connected to four reservoirs via quantum point contacts. In this four-terminal quantum dot the voltage path can be separated from the current path. We measured non-local resistance fluctuations of several hundreds of Ohms, which have been characterized as a function of bias voltage, gate voltage and perpendicular magnetic field. The amplitude of the resistance fluctuations is strongly reduced when the coupling between the voltage probes and the dot is enhanced. Along with experimental results, we present a theoretical analysis based on the Landauer-Büttiker formalism. While the theory predicts non-local resistance fluctuations of considerably larger amplitude than what has been observed, agreement with theory is very good if an additional dephasing mechanism is assumed. △ Less

Submitted 7 January, 2008; v1 submitted 22 May, 2007; originally announced May 2007.

Charge and spin dynamics in a two dimensional electron gas

Authors: A Pugzlys, P J Rizo, K Ivanin, A Slachter, D Reuter, A D Wieck, C H van der Wal, P H M van Loosdrecht

Abstract: A number of time resolved optical experiments probing and controlling the spin and charge dynamics of the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide information on the ca… ▽ More A number of time resolved optical experiments probing and controlling the spin and charge dynamics of the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide information on the carrier lifetimes and spin dephasing times, as well as on the carrier diffusion coefficient which directly gives the charge mobility. A combination of the two types of Kerr experiments, shows to be useful in extracting both the carrier lifetimes and spin dephasing times in a single experiment. △ Less

Submitted 27 October, 2006; originally announced October 2006.

Large cone angle magnetization precession of an individual nanomagnet with dc electrical detection

Authors: M. V. Costache, S. M. Watts, M. Sladkov, C. H. van der Wal, B. J. van Wees

Abstract: We demonstrate on-chip resonant driving of large cone-angle magnetization precession of an individual nanoscale permalloy element. Strong driving is realized by locating the element in close proximity to the shorted end of a coplanar strip waveguide, which generates a microwave magnetic field. We used a microwave frequency modulation method to accurately measure resonant changes of the dc anisot… ▽ More We demonstrate on-chip resonant driving of large cone-angle magnetization precession of an individual nanoscale permalloy element. Strong driving is realized by locating the element in close proximity to the shorted end of a coplanar strip waveguide, which generates a microwave magnetic field. We used a microwave frequency modulation method to accurately measure resonant changes of the dc anisotropic magnetoresistance. Precession cone angles up to $9^{0}$ are determined with better than one degree of resolution. The resonance peak shape is well-described by the Landau-Lifshitz-Gilbert equation. △ Less

Submitted 8 September, 2006; originally announced September 2006.

Electrical detection of spin pum** due to the precessing magnetization of a single ferromagnet

Authors: M. V. Costache, M. Sladkov, S. M. Watts, C. H. van der Wal, B. J. van Wees

Abstract: We report direct electrical detection of spin pum**, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a d.c. voltage due to the spin dependent conductivities of the ferromag… ▽ More We report direct electrical detection of spin pum**, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a d.c. voltage due to the spin dependent conductivities of the ferromagnet. By comparing different contact materials (Al and /or Pt), we find, in agreement with theory, that the spin related properties of the normal metal dictate the magnitude of the d.c. voltage. △ Less

Submitted 5 September, 2006; originally announced September 2006.

On-chip detection of ferromagnetic resonance of a single submicron permalloy strip

Authors: M. V. Costache, M. Sladkov, C. H. van der Wal, B. J. van Wees

Abstract: We measured ferromagnetic resonance of a single submicron ferromagnetic strip, embedded in an on-chip microwave transmission line device. The method used is based on detection of the oscillating magnetic flux due to the magnetization dynamics, with an inductive pick-up loop. The dependence of the resonance frequency on applied static magnetic field agrees very well with the Kittel formula, demon… ▽ More We measured ferromagnetic resonance of a single submicron ferromagnetic strip, embedded in an on-chip microwave transmission line device. The method used is based on detection of the oscillating magnetic flux due to the magnetization dynamics, with an inductive pick-up loop. The dependence of the resonance frequency on applied static magnetic field agrees very well with the Kittel formula, demonstrating that the uniform magnetization precession mode is being driven. △ Less

Submitted 3 July, 2006; originally announced July 2006.

Unified description of bulk and interface-enhanced spin pum**

Authors: S. M. Watts, J. Grollier, C. H. van der Wal, B. J. van Wees

Abstract: The dynamics of non-equilibrium spin accumulation generated in metals or semiconductors by rf magnetic field pum** is treated within a diffusive picture. The dc spin accumulation produced in a uniform system by a rotating applied magnetic field or by a precessing magnetization of a weak ferromagnet is in general given by a (small) fraction of hbar omega, where omega is the rotation or precessi… ▽ More The dynamics of non-equilibrium spin accumulation generated in metals or semiconductors by rf magnetic field pum** is treated within a diffusive picture. The dc spin accumulation produced in a uniform system by a rotating applied magnetic field or by a precessing magnetization of a weak ferromagnet is in general given by a (small) fraction of hbar omega, where omega is the rotation or precession frequency. With the addition of a neighboring, field-free region and allowing for the diffusion of spins, the spin accumulation is dramatically enhanced at the interface, saturating at the universal value hbar omega in the limit of long spin relaxation time. This effect can be maximized when the system dimensions are of the order of sqrt(2pi D omega), where D is the diffusion constant. We compare our results to the interface spin pum** theory of A. Brataas et al. [Phys. Rev. B 66, 060404(R) (2002)]. △ Less

Submitted 5 September, 2005; originally announced September 2005.

Journal ref: Phys. Rev. Lett. 96, 077201 (2006)

Microwave spectroscopy on magnetization reversal dynamics of nanomagnets with electronic detection

Authors: J. Grollier, M. V. Costache, C. H. van der Wal, B. J. van Wees

Abstract: We demonstrate a detection method for microwave spectroscopy on magnetization reversal dynamics of nanomagnets. Measurement of the nanomagnet anisotropic magnetoresistance was used for probing how magnetization reversal is resonantly enhanced by microwave magnetic fields. We used Co strips of 2 um x 130 nm x 40 nm, and microwave fields were applied via an on-chip coplanar wave guide. The method… ▽ More We demonstrate a detection method for microwave spectroscopy on magnetization reversal dynamics of nanomagnets. Measurement of the nanomagnet anisotropic magnetoresistance was used for probing how magnetization reversal is resonantly enhanced by microwave magnetic fields. We used Co strips of 2 um x 130 nm x 40 nm, and microwave fields were applied via an on-chip coplanar wave guide. The method was applied for demonstrating single domain-wall resonance, and studying the role of resonant domain-wall dynamics in magnetization reversal. △ Less

Submitted 5 July, 2006; v1 submitted 8 February, 2005; originally announced February 2005.