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Direct visualization and effects of atomic-scale defects on the optoelectronic properties of hexagonal boron nitride
Authors:
Pablo Ares,
Hernan Santos,
Snezana Lazic,
Carlos Gibaja,
Inigo Torres,
Sergio Pinilla Yanguas,
Julio Gomez-Herrero,
Herko P. van der Meulen,
Pablo Garcia-Gonzalez,
Felix Zamora
Abstract:
Hexagonal boron nitride (hBN) is attracting a lot of attention in the last years, thanks to its many remarkable properties. These include the presence of single-photon emitters with superior optical properties, which make it an ideal candidate for a plethora of photonic technologies. However, despite the large number of experimental results and theoretical calculations, the structure of the defect…
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Hexagonal boron nitride (hBN) is attracting a lot of attention in the last years, thanks to its many remarkable properties. These include the presence of single-photon emitters with superior optical properties, which make it an ideal candidate for a plethora of photonic technologies. However, despite the large number of experimental results and theoretical calculations, the structure of the defects responsible for the observed emission is still under debate. In this work, we visualize individual atomic-scale defects in hBN with atomic force microscopy under ambient conditions and observe multiple narrow emission lines from optically stable emitters. This direct observation of the structure of the defects combined with density functional theory calculations of their band structures and electronic properties allows us to associate the existence of several single-photon transitions to the observed defects. Our work sheds light on the origin of single-photon emission in hBN that is important for the understanding and tunability of high-quality emitters in optoelectronics and quantum technologies.
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Submitted 11 February, 2022;
originally announced February 2022.
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A multi-technique approach to understanding delithiation damage in LiCoO2 thin films
Authors:
E. Salagre,
S. Quilez,
R. de Benito,
M. Jaafar,
H. P. van der Meulen,
E. Vasco,
R. Cid,
E. J. Fuller,
A. A. Talin,
P. Segovia,
E. G. Michel,
C. Polop
Abstract:
We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that includes synchrotron radiation x-ray diffraction, scanning electron microscopy, micro Raman spectroscopy, photoelectron spectroscopy and conductive atomic force mic…
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We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that includes synchrotron radiation x-ray diffraction, scanning electron microscopy, micro Raman spectroscopy, photoelectron spectroscopy and conductive atomic force microscopy we reveal the balance between selective Li extraction and structural damage. We identify three different delithiation regimes, related to surface processes, bulk delithiation and damage generation. We find that only a fraction of the grains is affected by the delithiation process, which may create local inhomogeneities. The chemical route to Li extraction provides additional opportunities to investigate delithiation while avoiding the complications associated with electrolyte breakdown and could simplify in situ measurements.
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Submitted 23 February, 2021; v1 submitted 27 October, 2020;
originally announced October 2020.
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Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots
Authors:
S. Lazic,
E. Chernysheva,
A. Hernández-Mínguez,
P. V. Santos,
H. P. van der Meulen
Abstract:
On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface ac…
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On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum dot (QD)-like exciton localization centers induced by compositional fluctuations within the InGaN nanoshell were identified using stroboscopic micro-photoluminescence (micro-PL) spectroscopy. They exhibit narrow and almost fully linearly polarized emission lines in the micro-PL spectra and a pronounced anti-bunching signature of single photon emission in the photon correlation experiments. When the nanowire is perturbed by the propagating SAW, the embedded QD is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within a ~1.5 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome can be further combined with spectral detection filtering for temporal control of the emitted photons. The effect of the SAW piezoelectric field on the QD charge population and on the optical polarization degree is also observed. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies).
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Submitted 21 February, 2019;
originally announced February 2019.
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Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures
Authors:
S. Lazic,
E. Chernysheva,
A. Hernández-Mínguez,
P. V. Santos,
H. P. van der Meulen
Abstract:
We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and…
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We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling. Depending on the recombination lifetime of the involved optical transitions, we can resolve acoustically driven radiative processes over time scales defined by the acoustic cycle. At high acoustic amplitudes, we also observe distortions in the transmitted acoustic waveform, which are reflected in the time-dependent spectral response of our sensor quantum dot. In addition, the correlated intensity oscillations observed during temporal decay of the exciton and biexciton emission suggest an effect of the acoustic piezoelectric fields on the quantum dot charge population. The present results are relevant for the dynamic spectral and temporal control of photon emission in III-nitride semiconductor heterostructures.
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Submitted 21 February, 2019;
originally announced February 2019.
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Chemical Vapor Deposition Growth of Boron-Carbon-Nitrogen layers from Methylamine Borane Thermolysis Products
Authors:
Fabrice Leardini,
Eduardo Flores,
Andrés R. Galvis,
Isabel Jiménez Ferrer,
José Ramón Ares,
Carlos Sánchez,
Pablo Molina,
Herko P. van der Meulen,
Cristina Gómez Navarro,
Guillermo López Polin,
Fernando J. Urbanos,
Daniel Granados,
F. Javier García-García,
Umit B. Demirci,
Pascal G. Yot,
Filippo Mastrangelo,
Maria Grazia Betti,
Carlo Mariani
Abstract:
This work investigates the growth of B-C-N layers by chemical vapor deposition using methylamine borane (MeAB) as single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B-C-N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morp…
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This work investigates the growth of B-C-N layers by chemical vapor deposition using methylamine borane (MeAB) as single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B-C-N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morphological, structural, chemical, electronic and optical characterizations. The results of these characterizations indicate a segregation of h-BN and Graphene-like (Gr) domains. However, there is an important presence of B and N interactions with C at the Gr borders, and of C interacting at the h-BN-edges, respectively, in the obtained nano-layers. In particular, there is significant presence of C-N bonds, at Gr/h-BN borders and in the form of N do** of Gr domains. The overall B:C:N contents in the layers is close to 1:3:1.5. A careful analysis of the optical bandgap determination of the obtained B-C-N layers is presented, discussed and compared with previous seminal works with samples of similar composition.
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Submitted 20 February, 2019;
originally announced February 2019.
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Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
Authors:
S. Lazic,
E. Chernysheva,
Z. Gacevic,
H. P. van der Meulen,
E. Calleja,
J. M. Calleja Pardo
Abstract:
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. T…
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The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.
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Submitted 12 June, 2017;
originally announced June 2017.
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Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
Authors:
E. Chernysheva,
Z. Gacevic,
N. Garcia-Lepetit,
H. P. van der Meulen,
M. Muller,
F. Bertram,
P. Veit,
A. Torres-Pardo,
J. M. Gonzalez Calbet,
J. Christen,
E. Calleja,
J. M. Calleja,
S. Lazic
Abstract:
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical…
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Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characterization by electron microscopy, cathodoluminescence and micro-photoluminescence indicate that single photons are emitted from regions of high In concentration in the nano-disks due to alloy composition fluctuations. Single-photon emission is determined by photon correlation measurements showing deep anti-bunching minima in the second-order correlation function. The present results are a promising step towards the realization of on-site/on-demand single-photon sources in the blue-green spectral range operating in the GHz frequency range at high temperatures.
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Submitted 12 June, 2017;
originally announced June 2017.
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Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Authors:
Snezana Lazic,
Ekaterina Chernysheva,
Zarko Gacevic,
Noemi Garcia-Lepetit,
Herko P. van der Meulen,
Marcus Muller,
Frank Bertram,
Peter Veit,
Jürgen Christen,
Almudena Torres-Pardo,
José M. González Calbet,
Enrique Calleja,
Jose M. Calleja
Abstract:
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epi…
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The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.
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Submitted 12 June, 2017;
originally announced June 2017.
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High efficiency cyclotron trap assisted positron moderator
Authors:
L. Gerchow,
D. A. Cooke,
S. Braccini,
M. Döbeli,
K. Kirch,
U. Köster,
A. Müller,
N. P. Van Der Meulen,
C. Vermeulen,
A. Rubbia,
P. Crivelli
Abstract:
We report the realisation of a cyclotron trap assisted positron tungsten moderator for the conversion of positrons with a broad keV- few MeV energy spectrum to a mono-energetic eV beam with an efficiency of 1.8(2)% defined as the ratio of the slow positrons divided by the $β^+$ activity of the radioactive source. This is an improvement of almost two orders of magnitude compared to the state of the…
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We report the realisation of a cyclotron trap assisted positron tungsten moderator for the conversion of positrons with a broad keV- few MeV energy spectrum to a mono-energetic eV beam with an efficiency of 1.8(2)% defined as the ratio of the slow positrons divided by the $β^+$ activity of the radioactive source. This is an improvement of almost two orders of magnitude compared to the state of the art of tungsten moderators. The simulation validated with this measurement suggests that using an optimised setup even higher efficiencies are achievable.
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Submitted 17 March, 2017;
originally announced March 2017.
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Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging
Authors:
Andres Castellanos-Gomez,
Jorge Quereda,
Herko P. van der Meulen,
Nicolás Agraït,
Gabino Rubio-Bollinger
Abstract:
The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the do** level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-di…
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The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the do** level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-dimensional materials. Here we study the optical absorption of single- and few-layer molybdenum disulfide (MoS2) in the spectral range from 1.24 eV to 3.22 eV (385 nm to 1000 nm) by develo** a hyperspectral imaging technique that allows one to probe the optical properties with diffraction limited spatial resolution. We find hyperspectral imaging very suited to study indirect bandgap semiconductors, unlike photoluminescence that only provides high luminescence yield for direct gap semiconductors. Moreover, this work opens the door to study the spatial variation of the optical properties of other two-dimensional systems, including non-semiconducting materials where scanning photoluminescence cannot be employed.
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Submitted 3 July, 2015;
originally announced July 2015.
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Bichromatic dressing of a quantum dot detected by a remote second quantum dot
Authors:
M. Maragkou,
C. Sánchez-Muñoz,
S. Lazić,
E. Chernysheva,
H. P. van der Meulen,
A. González-Tudela,
C. Tejedor,
L. J. Martínez,
I. Prieto,
P. A. Postigo,
J. M. Calleja
Abstract:
We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out…
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We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out through the photo-luminescence spectrum of the other quantum dot, as well as the cavity mode. The effect is also observed upon exchange of the excitation and detection quantum dots. This quantum dot inter-talk is interpreted in terms of a cavity-mediated coupling involving acoustic phonons. A master equation for a three level system coherently pumped by the two lasers quantitatively describes the behavior of our system. Our results present an important step towards scalable solid-state quantum networking based on coupled multi-quantum-dot-cavity systems, without the need of using identical quantum emitters.
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Submitted 17 September, 2013;
originally announced September 2013.
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Experimental Verification of the Chemical Sensitivity of Two-Site Double Core-Hole States Formed by an X-ray FEL
Authors:
P. Salen,
P. van der Meulen,
H. T. Schmidt,
R. D. Thomas,
M. Larsson,
R. Feifel,
M. N. Piancastelli,
L. Fang,
B. Murphy,
T. Osipov,
N. Berrah,
E. Kukk,
K. Ueda,
J. D. Bozek,
C. Bostedt,
S. Wada,
R. Richter,
V. Feyer,
K. C. Prince
Abstract:
We have performed X-ray two-photon photoelectron spectroscopy (XTPPS) using the Linac Coherent Light Source (LCLS) X-ray free-electron laser (FEL) in order to study double core-hole (DCH) states of CO2, N2O and N2. The experiment verifies the theory behind the chemical sensitivity of two-site (ts) DCH states by comparing a set of small molecules with respect to the energy shift of the tsDCH state…
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We have performed X-ray two-photon photoelectron spectroscopy (XTPPS) using the Linac Coherent Light Source (LCLS) X-ray free-electron laser (FEL) in order to study double core-hole (DCH) states of CO2, N2O and N2. The experiment verifies the theory behind the chemical sensitivity of two-site (ts) DCH states by comparing a set of small molecules with respect to the energy shift of the tsDCH state and by extracting the relevant parameters from this shift.
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Submitted 2 May, 2012;
originally announced May 2012.
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Microcavity-mediated Coupling of Two Distant Semiconductor Qubits
Authors:
E. Gallardo,
L. J. Martinez,
A. K. Nowak,
H. P. van der Meulen,
J. M. Calleja,
C. Tejedor,
I. Prieto,
D. Granados,
A. G. Taboada,
J. M. Garcia,
P. A. Postigo
Abstract:
Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state emission of both quantum dots and the cavity mode. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an e…
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Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state emission of both quantum dots and the cavity mode. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an experimental step towards the realization of quantum logic operations using distant solid state qubits.
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Submitted 8 August, 2009;
originally announced August 2009.
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Piezoelectric exciton-acoustic phonon coupling in single quantum dots
Authors:
D. Sarkar,
H. P. van der Meulen,
J. M. Calleja,
J. M. Meyer,
R. J. Haug,
K. Pierz
Abstract:
Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attribute…
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Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton-acoustic phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
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Submitted 14 October, 2008;
originally announced October 2008.
