Showing 1–10 of 10 results for author: van der Jagt, J W

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

Authors: Maria-Andromachi Syskaki, Takaaki Dohi, Sergei Olegovich Filnov, Sergey Alexeyevich Kasatikov, Beatrice Bednarz, Alevtina Smekhova, Florian Kronast, Mona Bhukta, Rohit Pachat, Johannes Wilhelmus van der Jagt, Shimpei Ono, Dafiné Ravelosona Ramasitera, Jürgen Langer, Mathias Kläui, Liza Herrera Diez, Gerhard Jakob

Abstract: The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying… ▽ More The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Control of domain wall and pinning disorder interaction by light He$^+$ ion irradiation in Pt/Co/AlOx ultrathin films

Authors: Cristina Balan, Johannes W. van der Jagt, Jose Peña Garcia, Jan Vogel, Laurent Ranno, Marlio Bonfim, Dafiné Ravelosona, Stefania Pizzini, Vincent Jeudy

Abstract: We have studied the effect of He$^+$ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime. The irradiation leads to a strong decrease of the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics result essentially from the strong decrease of the effective anisotropy constant, which increases t… ▽ More We have studied the effect of He$^+$ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime. The irradiation leads to a strong decrease of the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics result essentially from the strong decrease of the effective anisotropy constant, which increases the domain wall width. The latter is found to present a perfect scaling with the length-scale of the interaction between domain wall and disorder, $ξ$. On the other hand, the strength of the domain wall-disorder interaction, $f_{pin}$, is weakly impacted by the irradiation, suggesting that the length-scales of the disorder fluctuation remain smaller than the domain wall width. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 5 pages, 3 figures

Improving Néel domain walls dynamics and skyrmion stability using He ion irradiation

Authors: Cristina Balan, Johannes W. van der Jagt, Aymen Fassatoui, Jose Peña Garcia, Vincent Jeudy, André Thiaville, Jan Vogel, Marlio Bonfim, Laurent Ranno, Dafiné Ravelosona, Stefania Pizzini

Abstract: Magnetization reversal and domain wall dynamics in Pt/Co/AlOx trilayers have been tuned by He+ ion irradiation. Fluences up to 1.5x10$^{15}$ ions/cm$^2$ strongly decrease the perpendicular magnetic anisotropy (PMA), without affecting neither the spontaneous magnetization nor the strength of the Dzyaloshinskii-Moriya interaction (DMI). This confirms the robustness of the DMI interaction against int… ▽ More Magnetization reversal and domain wall dynamics in Pt/Co/AlOx trilayers have been tuned by He+ ion irradiation. Fluences up to 1.5x10$^{15}$ ions/cm$^2$ strongly decrease the perpendicular magnetic anisotropy (PMA), without affecting neither the spontaneous magnetization nor the strength of the Dzyaloshinskii-Moriya interaction (DMI). This confirms the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA in the irradiated samples, a strong decrease of the depinning field is observed. This allows the domain walls to reach large maximum velocities with lower magnetic fields with respect to those needed for the pristine films. Decoupling PMA from DMI can therefore be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He+ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition where 100nm size magnetic skyrmions are stabilized. We observe that as the He+ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 10 pages, 4 figures

Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation

Authors: Giovanni Masciocchi, Johannes Wilhelmus van der Jagt, Maria-Andromachi Syskaki, Jürgen Langer, Gerhard Jakob, Jeffrey McCord, Benjamin Borie, Andreas Kehlberger, Dafine Ravelosona, Mathias Kläui

Abstract: Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softnes… ▽ More Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device. △ Less

Submitted 2 March, 2023; v1 submitted 28 February, 2023; originally announced February 2023.

Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion

Authors: Johannes Wilhelmus van der Jagt, Vincent Jeudy, André Thiaville, Mamour Sall, Nicolas Vernier, Liza Herrera Diez, Mohamed Belmeguenai, Yves Roussigné, Salim M. Chérif, Mouad Fattouhi, Luis Lopez-Diaz, Alessio Lamperti, Roméo Juge, Dafiné Ravelosona

Abstract: Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process… ▽ More Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 22 pages, 12 figures. Currently under review

Enhancing All-Optical Switching of Magnetization by He Ion Irradiation

Authors: **zhi Li, Johannes W. van der Jagt, Maarten Beens, Julian Hintermayr, Marcel Verheijen, René Bruikman, Beatriz Barcones, Roméo Juge, Reinoud Lavrijsen, Dafiné Ravelosona, Bert Koopmans

Abstract: All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion… ▽ More All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modelled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Control of magnetoelastic coupling in Ni/Fe multilayers using He$^+$ ion irradiation

Authors: Giovanni Masciocchi, Johannes Wilhelmus van der Jagt, Maria-Andromachi Syskaki, Alessio Lamperti, Niklas Wolff, Andriy Lotnyk, Jürgen Langer, Lorenz Kienle, Gerhard Jakob, Benjamin Borie, Andreas Kehlberger, Dafine Ravelosona, Mathias Kläui

Abstract: This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Addition… ▽ More This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Additionally, the critical fluence at which the absolute value of the magnetostriction is dramatically reduced is identified. Therefore insensitivity to strain of the magnetic stack is nearly reached, as required for many applications. All the above mentioned effects are attributed to the combination of the negative saturation magnetostriction of sputtered Ni, Fe layers and the positive magnetostriction of the Ni$_{x}$Fe$_{1-x}$ alloy at the intermixed interfaces, whose contribution is gradually increased with irradiation. Importantly the irradiation does not alter the layers polycrystalline structure, confirming that post-growth He$^+$ ion irradiation is an excellent tool to tune the magneto-elastic properties of magnetic samples. A new class of spintronic devices can be envisioned with a material treatment able to arbitrarily change the magnetostriction with ion-induced "magnetic patterning". △ Less

Submitted 6 July, 2022; originally announced July 2022.

Ab-initio study of magneto-ionic mechanisms in ferromagnet/oxide multilayers

Authors: Adriano Di Pietro, Rohit Pachat, Liza Herrera Diez, Johannes W. van der Jagt, Dafiné Ravelosona, Gianfranco Durin

Abstract: The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism… ▽ More The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behaviour in $\text{Ta/CoFeB/}\text{HfO}_2$, we perform ab-initio simulations on various setups comprising $\text{Fe/O, Fe/HfO}_2$ interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetic anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in $\text{Ta/CoFeB/}\text{HfO}_2$. △ Less

Submitted 25 April, 2022; originally announced April 2022.

Comments: 8 pages, 5 figures

Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$

Authors: R. Pachat, D. Ourdani, J. W. van der Jagt, M. -A. Syskaki, A. Di Pietro, Y. Roussigné, S. Ono, M. S. Gabor, M. Chérif, G. Durin, J. Langer, M. Belmeguenai, D. Ravelosona, L. Herrera Diez

Abstract: In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full rev… ▽ More In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective dam** parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Applied 15, 064055 (2021)

Spontaneous creation and annihilation dynamics and strain-limited stability of magnetic skyrmions

Authors: Frederic Rendell-Bhatti, Raymond J. Lamb, Johannes W. van der Jagt, Gary W. Paterson, Henk J. M. Swagten, Damien McGrouther

Abstract: Magnetic skyrmions are topological magnetic spin structures exhibiting particle-like behaviour. They are of strong interest from a fundamental viewpoint and for application, where they have potential to act as information carriers in future low-power computing technologies. Importantly, skyrmions have high physical stability because of topological protection. However, they have potential to deform… ▽ More Magnetic skyrmions are topological magnetic spin structures exhibiting particle-like behaviour. They are of strong interest from a fundamental viewpoint and for application, where they have potential to act as information carriers in future low-power computing technologies. Importantly, skyrmions have high physical stability because of topological protection. However, they have potential to deform according to their local energy environment. Here we demonstrate that, in regions of high exchange energy density, skyrmions may exhibit such extreme deformation that spontaneous merging with nearest neighbours or spawning new skyrmions is favoured to attain a lower energy state. Using transmission electron microscopy and a high-speed imaging detector, we observe dynamics involving distinct configurational states, in which transitions are accompanied by spontaneous creation or annihilation of skyrmions. These observations raise important questions regarding the limits of skyrmion stability and topological charge conservation, while also suggesting a means of control of skyrmion creation and annihilation. △ Less

Submitted 3 July, 2020; v1 submitted 22 November, 2019; originally announced November 2019.

Comments: 19 pages total. 4 figures at the end of the main text, supplementary material follows