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Showing 1–4 of 4 results for author: van de Ven, B

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  1. arXiv:2105.11233  [pdf

    cs.NE cs.ET cs.LG

    Gradient Descent in Materio

    Authors: Marcus N. Boon, Hans-Christian Ruiz Euler, Tao Chen, Bram van de Ven, Unai Alegre Ibarra, Peter A. Bobbert, Wilfred G. van der Wiel

    Abstract: Deep learning, a multi-layered neural network approach inspired by the brain, has revolutionized machine learning. One of its key enablers has been backpropagation, an algorithm that computes the gradient of a loss function with respect to the weights in the neural network model, in combination with its use in gradient descent. However, the implementation of deep learning in digital computers is i… ▽ More

    Submitted 15 May, 2021; originally announced May 2021.

  2. arXiv:2007.12371  [pdf, other

    cs.LG cs.AR cs.ET cs.NE stat.ML

    Dopant Network Processing Units: Towards Efficient Neural-network Emulators with High-capacity Nanoelectronic Nodes

    Authors: Hans-Christian Ruiz-Euler, Unai Alegre-Ibarra, Bram van de Ven, Hajo Broersma, Peter A. Bobbert, Wilfred G. van der Wiel

    Abstract: The rapidly growing computational demands of deep neural networks require novel hardware designs. Recently, tunable nanoelectronic devices were developed based on hop** electrons through a network of dopant atoms in silicon. These "Dopant Network Processing Units" (DNPUs) are highly energy-efficient and have potentially very high throughput. By adapting the control voltages applied to its termin… ▽ More

    Submitted 3 August, 2021; v1 submitted 24 July, 2020; originally announced July 2020.

    Comments: Minor change: replaced the DNPU on Fig. 1 with a clearer schematic

  3. arXiv:2001.05045  [pdf, other

    cond-mat.mes-hall quant-ph

    Single-charge occupation in ambipolar quantum dots

    Authors: A. J. Sousa de Almeida, A. Marquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, F. A. Zwanenburg

    Abstract: We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and fe… ▽ More

    Submitted 14 January, 2020; originally announced January 2020.

    Comments: 13 pages, 4 figures

    Journal ref: Phys. Rev. B 101, 201301 (2020)

  4. arXiv:quant-ph/0212130  [pdf, ps, other

    quant-ph hep-th math-ph

    Time Asymmetric Quantum Theory - I Modifying an Axiom of Quantum Physics

    Authors: A. Bohm, Mark Loewe, Bryan Van de Ven

    Abstract: A slight modification of one axiom of quantum theory changes a reversible theory into a time asymmetric theory. Whereas the standard Hilbert space axiom does not distinguish mathematically between the space of states (in-states of scattering theory) and the space of observables (out-``states'' of scattering theory) the new axiom associates states and observables to two different Hardy subspaces… ▽ More

    Submitted 14 February, 2003; v1 submitted 22 December, 2002; originally announced December 2002.

    Comments: 23 pages

    Journal ref: Fortsch.Phys.51:551-568,2003