Showing 1–13 of 13 results for author: van de Kerkhof, M

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Authors: D. Shefer, A. Nikipelov, M. van de Kerkhof, V. Banine, J. Beckers

Abstract: Laser Light Scattering (LLS) method, combined with a long-distance microscope was utilized to detect micrometer-sized particles on a smooth substrate. LLS was capable to detect individual particle release, shrink, or fragmentation during exposure to a plasma or a gas jet. In-situ monitoring of hundreds of particles was carried out to investigate the effect of hydrogen plasma exposure on particle a… ▽ More Laser Light Scattering (LLS) method, combined with a long-distance microscope was utilized to detect micrometer-sized particles on a smooth substrate. LLS was capable to detect individual particle release, shrink, or fragmentation during exposure to a plasma or a gas jet. In-situ monitoring of hundreds of particles was carried out to investigate the effect of hydrogen plasma exposure on particle adhesion, morphology, and composition. LLS was calibrated with monodisperse melamine resin spheres with known sizes of 2.14 um, 2.94 um, and 5.26 um in diameter. The lowest achievable noise level of approximately 3% was demonstrated for counting 5.26 um spherical melamine particles. The accuracy for melamine particle size measurements ranged from 50% for 2.14 um particles to 10% for 5.26 um particles. This scatter was taken as the imprecision of the method. Size distribution for polydisperse particles with known refractive index was obtained by interpolating to an effective scattering cross-section of a sphere using Mie theory. While the Abbe diffraction limit was about 2 um in our system, the detection limit for Si particles in LLS according to Mie approximation was assessed to about 3 um, given the limitations of the laser flux, microscope resolution, camera noise, and particle composition. Additionally, the gradual changes in forward scattering cross-sections for Si particles during the exposure to the hydrogen plasma were consistent with Si etching reported in the literature. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Particle charging during pulsed EUV exposures with afterglow effect

Authors: M. Chaudhuri, L. C. J. Heijmans, M. van de Kerkhof, P. Krainov, D. Astakhov, A. M. Yakunin

Abstract: The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is found that the particle charge polarity (positive or negative) strongly depends on its size, location and background transient plasma conditions. The particle (100 nm diameter) charge reaches steady state in a single puls… ▽ More The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is found that the particle charge polarity (positive or negative) strongly depends on its size, location and background transient plasma conditions. The particle (100 nm diameter) charge reaches steady state in a single pulse (20 us) within the EUV beam in contrast to particles outside the beam that requires multiple pulses. The larger the particle size, the less number of pulses are required to reach steady state. It is found that the charge of a particle decreases with pressure in a faster rate outside the beam compared to inside. The results are of importance for particle contamination (defectivity) control strategy for EUV lithography machines. △ Less

Submitted 26 March, 2023; originally announced March 2023.

AFM-based Hamaker Constant Determination with Blind Tip Reconstruction

Authors: Benny Ku, Ferdinandus van de Wetering, Jens Bolten, Bart Stel, Mark A. van de Kerkhof, Max C. Lemme

Abstract: Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device failures when disturbed patterns are projected repeatedly onto wafers during EUV exposure. Understanding adhesion of particle contamination is key in devising a strategy for cleaning of photomasks. In this work, particle con… ▽ More Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device failures when disturbed patterns are projected repeatedly onto wafers during EUV exposure. Understanding adhesion of particle contamination is key in devising a strategy for cleaning of photomasks. In this work, particle contamination is treated as a particle-plane problem in which surface roughness and the interacting materials have major influences. For this purpose, we perform vacuum atomic force microscopy (AFM) contact measurements to quantify the van der Waals (vdW) forces between tip and sample. We introduce this as a vacuum AFM-based methodology that combines numerical Hamaker theory and Blind Tip Reconstruction (BTR). We have determined the Hamaker constants of $15x10^{-20} J$ and $13x10^{-20} J$ for the material systems of a silicon (Si) tip with both aluminum oxide ($Al_{2}O_{3}$) and native silicon dioxide ($SiO_{2}$) on Si substrates, respectively. Our methodology allows an alternative, quick and low-cost approach to characterize the Hamaker constant within the right order of magnitude for any material combination. △ Less

Submitted 14 August, 2022; originally announced August 2022.

Journal ref: Advanced Materials Technologies, 2200411, 2022

Electron drag force in EUV induced pulsed hydrogen plasmas

Authors: M. Chaudhuri, A. Yakunin, M. van de Kerkhof, R. Snijdewind

Abstract: Extreme ultraviolet (EUV) induced pulsed plasma is unique due to its transient characteristics: the plasma switches between non-thermal state (when EUV power is ON at the beginning of the pulse) and thermal state (end of the pulse at ~ 20 us). It is shown that although electron drag force acting on nm size particles in hydrogen plasma is negligible compared to the ion drag force at the beginning o… ▽ More Extreme ultraviolet (EUV) induced pulsed plasma is unique due to its transient characteristics: the plasma switches between non-thermal state (when EUV power is ON at the beginning of the pulse) and thermal state (end of the pulse at ~ 20 us). It is shown that although electron drag force acting on nm size particles in hydrogen plasma is negligible compared to the ion drag force at the beginning of the pulse, however it can be dominant at the end of the pulse and can play important role in particle transport leading to defectivity issues for semiconductor chip production technologies. △ Less

Submitted 24 December, 2021; originally announced December 2021.

Embedding Ray Intersection Graphs and Global Curve Simplification

Authors: Mees van de Kerkhof, Irina Kostitsyna, Maarten Löffler

Abstract: We prove that circle graphs (intersection graphs of circle chords) can be embedded as intersection graphs of rays in the plane with polynomial-size bit complexity. We use this embedding to show that the global curve simplification problem for the directed Hausdorff distance is NP-hard. In this problem, we are given a polygonal curve $P$ and the goal is to find a second polygonal curve $P'$ such th… ▽ More We prove that circle graphs (intersection graphs of circle chords) can be embedded as intersection graphs of rays in the plane with polynomial-size bit complexity. We use this embedding to show that the global curve simplification problem for the directed Hausdorff distance is NP-hard. In this problem, we are given a polygonal curve $P$ and the goal is to find a second polygonal curve $P'$ such that the directed Hausdorff distance from $P'$ to $P$ is at most a given constant, and the complexity of $P'$ is as small as possible. △ Less

Submitted 31 August, 2021; originally announced September 2021.

Comments: Appears in the Proceedings of the 29th International Symposium on Graph Drawing and Network Visualization (GD 2021)

Miniature Plasma Source for In-Situ Scanner Cleaning

Authors: Mark van de Kerkhof, Edgar Osorio, Vladimir Krivtsun, Maxim Spiridonov, Viacheslav Medvedev, Dmitry Astakhov

Abstract: EUV Lithography is the technology of choice for High-Volume Manufacturing (HVM) of sub-10nm lithography. One of the challenges is to enable in-situ cleaning of functional surfaces such as sensors, fiducials and interferometer mirrors without opening the scanner tool. Thermally created hydrogen radicals have been successfully used for this purpose. These sources have a limited cleaning speed and re… ▽ More EUV Lithography is the technology of choice for High-Volume Manufacturing (HVM) of sub-10nm lithography. One of the challenges is to enable in-situ cleaning of functional surfaces such as sensors, fiducials and interferometer mirrors without opening the scanner tool. Thermally created hydrogen radicals have been successfully used for this purpose. These sources have a limited cleaning speed and relatively high thermal load to the surface being cleaned. Here we present an alternative plasma-based technique to simultaneously create hydrogen radicals and hydrogen ions. This results in significantly improved cleaning speed while simultaneously reducing the overall thermal load. As an additional benefit, this plasma source has a minimized and flexible building volume to allow easy integration into various locations in the EUV lithographic scanner. △ Less

Submitted 18 June, 2021; originally announced June 2021.

EUV-induced Hydrogen Plasma : Pulsed Mode Operation and Confinement in Scanner

Authors: Mark van de Kerkhof, Andrei M. Yakunin, Dmitry Astakhov, Maarten van Kampen, Ruud van der Horst, Vadim Banine

Abstract: In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and transmitted through a near-vacuum H2 background gas. This gas is excited into a low-density H2 plasma by the EUV radiation, as generated in pulsed mode operati… ▽ More In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and transmitted through a near-vacuum H2 background gas. This gas is excited into a low-density H2 plasma by the EUV radiation, as generated in pulsed mode operation by the Laser-Produced Plasma (LPP) in the EUV Source. Thus, in the confinement created by the walls and mirrors within the scanner system, a reductive plasma environment is created that must be understood in detail to maximize mirror transmission over lifetime and to minimize molecular and particle contamination in the scanner. Besides the irradiated mirrors, reticle and wafer, also the plasma and radical load to the surrounding construction materials must be considered. This paper will provide an overview of the EUV-induced plasma in scanner context. Special attention will be given to the plasma parameters in a confined geometry, such as may be found in the scanner area near the reticle. Also, the translation of these specific plasma parameters to off-line setups will be discussed. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Covering a set of line segments with a few squares

Authors: Joachim Gudmundsson, Mees van de Kerkhof, André van Renssen, Frank Staals, Lionov Wiratma, Sampson Wong

Abstract: We study three covering problems in the plane. Our original motivation for these problems come from trajectory analysis. The first is to decide whether a given set of line segments can be covered by up to four unit-sized, axis-parallel squares. The second is to build a data structure on a trajectory to efficiently answer whether any query subtrajectory is coverable by up to three unit-sized axis-p… ▽ More We study three covering problems in the plane. Our original motivation for these problems come from trajectory analysis. The first is to decide whether a given set of line segments can be covered by up to four unit-sized, axis-parallel squares. The second is to build a data structure on a trajectory to efficiently answer whether any query subtrajectory is coverable by up to three unit-sized axis-parallel squares. The third problem is to compute a longest subtrajectory of a given trajectory that can be covered by up to two unit-sized axis-parallel squares. △ Less

Submitted 1 May, 2022; v1 submitted 25 January, 2021; originally announced January 2021.

Comments: Journal Version, TCS 2022

Plasma-assisted Discharges and Charging in EUV-induced Plasma

Authors: Mark van de Kerkhof, Andrei M. Yakunin, Vladimir Kvon, Selwyn Cats, Luuk Heijmans, Manis Chaudhuri, Dmitry Asthakov

Abstract: In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is transmitted through a near-vacuum H2 background gas, imaging the pattern of a reticle onto a wafer. The energetic EUV photons excite the background gas into a low-density… ▽ More In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is transmitted through a near-vacuum H2 background gas, imaging the pattern of a reticle onto a wafer. The energetic EUV photons excite the background gas into a low-density H2 plasma. The resulting plasma will locally change the near-vacuum into a conducting medium, and can charge floating surfaces and particles, also away from the direct EUV beam. This paper will discuss the interaction between EUV-induced plasma and electrostatics, by modeling and experiments. We show that the EUV-induced plasma can trigger discharges well below the classical Paschen limit. Furthermore, we demonstrate the charging effect of the EUV plasma on both particles and surfaces. Uncontrolled, this can lead to unacceptably high voltages on the reticle backside and the generation and transport of particles. We demonstrate a special unloading sequence to use the EUV-induced plasma to actively solve the charging and defectivity challenges. △ Less

Submitted 5 December, 2020; originally announced December 2020.

Particle lofting from substrate exposed to plasma and electron beam

Authors: P. V. Krainov, V. V. Ivanov, D. I. Astakhov, V. V. Medvedev, V. V. Kvon, A. M. Yakunin, M. A. van de Kerkhof

Abstract: A nanometer-sized dielectric particle lying on a dielectric substrate is exposed to the flux of low-energy electrons, ion and electron fluxes from a cold plasma and the fluxes from the combination of these two sources with the help of particle-in-cell simulation to investigate the particle lofting phenomenon. The results are of interest for dust mitigation in the semiconductor industry, the lunar… ▽ More A nanometer-sized dielectric particle lying on a dielectric substrate is exposed to the flux of low-energy electrons, ion and electron fluxes from a cold plasma and the fluxes from the combination of these two sources with the help of particle-in-cell simulation to investigate the particle lofting phenomenon. The results are of interest for dust mitigation in the semiconductor industry, the lunar exploration, and the explanation of the dust levitation. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Comments: 5 pages, 7 figures

Dielectric particle lofting from dielectric substrate exposed to low energy electron beam

Authors: P. V. Krainov, V. V. Ivanov, D. I. Astakhov, M. A. van de Kerkhof, V. V. Kvon, V. V. Medvedev, A. M. Yakunin

Abstract: The particle-in-cell simulation is applied to study a nanometer-sized dielectric particle lofting from a dielectric substrate exposed to a low energy electron beam. The article discusses the electron accumulation between such a substrate and a particle lying on it, that can cause a particle lofting. The results are of interest for dust mitigation in the semiconductor industry, the lunar exploratio… ▽ More The particle-in-cell simulation is applied to study a nanometer-sized dielectric particle lofting from a dielectric substrate exposed to a low energy electron beam. The article discusses the electron accumulation between such a substrate and a particle lying on it, that can cause a particle lofting. The results are of interest for dust mitigation in the semiconductor industry, the lunar exploration and the explanation of the dust levitation. △ Less

Submitted 22 January, 2020; originally announced January 2020.

Comments: 5 pages, 5 figures

Journal ref: Plasma Sources Sci. Technol. 29 (2020) 085013 (8pp)

Global Curve Simplification

Authors: Mees van de Kerkhof, Irina Kostitsyna, Maarten Löffler, Majid Mirzanezhad, Carola Wenk

Abstract: Due to its many applications, \emph{curve simplification} is a long-studied problem in computational geometry and adjacent disciplines, such as graphics, geographical information science, etc. Given a polygonal curve $P$ with $n$ vertices, the goal is to find another polygonal curve $P'$ with a smaller number of vertices such that $P'$ is sufficiently similar to $P$. Quality guarantees of a simpli… ▽ More Due to its many applications, \emph{curve simplification} is a long-studied problem in computational geometry and adjacent disciplines, such as graphics, geographical information science, etc. Given a polygonal curve $P$ with $n$ vertices, the goal is to find another polygonal curve $P'$ with a smaller number of vertices such that $P'$ is sufficiently similar to $P$. Quality guarantees of a simplification are usually given in a \emph{local} sense, bounding the distance between a shortcut and its corresponding section of the curve. In this work, we aim to provide a systematic overview of curve simplification problems under \emph{global} distance measures that bound the distance between $P$ and $P'$. We consider six different curve distance measures: three variants of the \emph{Hausdorff} distance and three variants of the \emph{Fréchet} distance. And we study different restrictions on the choice of vertices for $P'$. We provide polynomial-time algorithms for some variants of the global curve simplification problem and show NP-hardness for other variants. Through this systematic study we observe, for the first time, some surprising patterns, and suggest directions for future research in this important area. △ Less

Submitted 22 January, 2020; v1 submitted 26 September, 2018; originally announced September 2018.

Comments: 33 pages, 16 figures

ACM Class: F.2.2

Convex partial transversals of planar regions

Authors: Vahideh Keikha, Mees van de Kerkhof, Marc van Kreveld, Irina Kostitsyna, Maarten Löffler, Frank Staals, Jérôme Urhausen, Jordi L. Vermeulen, Lionov Wiratma

Abstract: We consider the problem of testing, for a given set of planar regions $\cal R$ and an integer $k$, whether there exists a convex shape whose boundary intersects at least $k$ regions of $\cal R$. We provide a polynomial time algorithm for the case where the regions are disjoint line segments with a constant number of orientations. On the other hand, we show that the problem is NP-hard when the regi… ▽ More We consider the problem of testing, for a given set of planar regions $\cal R$ and an integer $k$, whether there exists a convex shape whose boundary intersects at least $k$ regions of $\cal R$. We provide a polynomial time algorithm for the case where the regions are disjoint line segments with a constant number of orientations. On the other hand, we show that the problem is NP-hard when the regions are intersecting axis-aligned rectangles or 3-oriented line segments. For several natural intermediate classes of shapes (arbitrary disjoint segments, intersecting 2-oriented segments) the problem remains open. △ Less

Submitted 26 September, 2018; originally announced September 2018.