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Optical readout of a superconducting qubit using a scalable piezo-optomechanical transducer
Authors:
T. C. van Thiel,
M. J. Weaver,
F. Berto,
P. Duivestein,
M. Lemang,
K. L. Schuurman,
M. Žemlička,
F. Hijazi,
A. C. Bernasconi,
E. Lachman,
M. Field,
Y. Mohan,
F. K. de Vries,
C. C. Bultink,
J. van Oven,
J. Y. Mutus,
R. Stockill,
S. Gröblacher
Abstract:
Superconducting quantum processors have made significant progress in size and computing potential. As a result, the practical cryogenic limitations of operating large numbers of superconducting qubits are becoming a bottleneck for further scaling. Due to the low thermal conductivity and the dense optical multiplexing capacity of telecommunications fiber, converting qubit signal processing to the o…
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Superconducting quantum processors have made significant progress in size and computing potential. As a result, the practical cryogenic limitations of operating large numbers of superconducting qubits are becoming a bottleneck for further scaling. Due to the low thermal conductivity and the dense optical multiplexing capacity of telecommunications fiber, converting qubit signal processing to the optical domain using microwave-to-optics transduction would significantly relax the strain on cryogenic space and thermal budgets. Here, we demonstrate high-fidelity multi-shot optical readout through an optical fiber of a superconducting transmon qubit connected via a coaxial cable to a fully integrated piezo-optomechanical transducer. Using a demolition readout technique, we achieve a multi-shot readout fidelity of >0.99 at 6 $μ$W of optical power transmitted into the cryostat with as few as 200 averages, without the use of a quantum-limited amplifier. With improved frequency matching between the transducer and the qubit readout resonator, we anticipate that single-shot optical readout is achievable. Due to the small footprint (<0.15mm$^2$) and the modular fiber-based architecture, this device platform has the potential to scale towards use with thousands of qubits. Our results illustrate the potential of piezo-optomechanical transduction for low-dissipation operation of large quantum processors.
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Submitted 2 November, 2023; v1 submitted 9 October, 2023;
originally announced October 2023.
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An integrated microwave-to-optics interface for scalable quantum computing
Authors:
Matthew J. Weaver,
Pim Duivestein,
Alexandra C. Bernasconi,
Selim Scharmer,
Mathilde Lemang,
Thierry C. van Thiel,
Frederick Hijazi,
Bas Hensen,
Simon Gröblacher,
Robert Stockill
Abstract:
Microwave-to-optics transduction is emerging as a vital technology for scaling quantum computers and quantum networks. To establish useful entanglement links between qubit processing units, several key conditions have to be simultaneously met: the transducer must add less than a single quantum of input referred noise and operate with high-efficiency, as well as large bandwidth and high repetition…
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Microwave-to-optics transduction is emerging as a vital technology for scaling quantum computers and quantum networks. To establish useful entanglement links between qubit processing units, several key conditions have to be simultaneously met: the transducer must add less than a single quantum of input referred noise and operate with high-efficiency, as well as large bandwidth and high repetition rate. Here we present a new design for an integrated transducer based on a planar superconducting resonator coupled to a silicon photonic cavity through a mechanical oscillator made of lithium niobate on silicon. We experimentally demonstrate its unique performance and potential for simultaneously realizing all of the above conditions, measuring added noise that is limited to a few photons, transduction efficiencies as high as 0.9%, with a bandwidth of 14.8 MHz and a repetition rate of up to 100 kHz. Our device couples directly to a 50-Ohm transmission line and can easily be scaled to a large number of transducers on a single chip, paving the way for distributed quantum computing.
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Submitted 27 October, 2022;
originally announced October 2022.
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Designing spin and orbital sources of Berry curvature at oxide interfaces
Authors:
Edouard Lesne,
Yildiz G. Saǧlam,
Raffaele Battilomo,
Maria Teresa Mercaldo,
Thierry C. van Thiel,
Ulderico Filippozzi,
Canio Noce,
Mario Cuoco,
Gary A. Steele,
Carmine Ortix,
Andrea D. Caviglia
Abstract:
Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is trigger…
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Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here, we report the discovery of the first material system having both spin and orbital-sourced BC: LaAlO$_3$/SrTiO$_3$ interfaces grown along the [111] direction. We detect independently these two sources and directly probe the BC associated to the spin quantum number through measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.
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Submitted 3 February, 2023; v1 submitted 28 January, 2022;
originally announced January 2022.
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Self-sealing complex oxide resonators
Authors:
Martin Lee,
Martin Robin,
Ruben Guis,
Ulderico Filippozzi,
Dong Hoon Shin,
Thierry C. van Thiel,
Stijn Paardekooper,
Johannes R. Renshof,
Herre S. J. van der Zant,
Andrea D. Caviglia,
Gerard J. Verbiest,
Peter G. Steeneken
Abstract:
Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity of pressu…
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Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity of pressure sensors to be sealed by a simple anneal. To test the hermeticity, we study the gas permeation time constants in nano-mechanical resonators made from SrRuO3 and SrTiO3 membranes suspended over SiO2/Si cavities which show an improvement up to 4 orders of magnitude in the permeation time constant after annealing the devices for 15 minutes. Similar devices fabricated on Si3N4/Si do not show such improvements, suggesting that the adhesion increase over SiO2 is mediated by oxygen bonds that are formed at the SiO2/complex oxide interface during the self-sealing anneal. We confirm the enhancement of adhesion by picosecond ultrasonics measurements which show an increase in the interfacial stiffness by 70% after annealing. Since it is straigthforward to apply, the presented self-sealing method is thus a promising route toward realizing ultrathin hermetic pressure sensors.
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Submitted 8 September, 2021;
originally announced September 2021.
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Coupling charge and topological reconstructions at polar oxide interfaces
Authors:
T. C. van Thiel,
W. Brzezicki,
C. Autieri,
J. R. Hortensius,
D. Afanasiev,
N. Gauquelin,
D. Jannis,
N. Janssen,
D. J. Groenendijk,
J. Fatermans,
S. van Aert,
J. Verbeeck,
M. Cuoco,
A. D. Caviglia
Abstract:
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventiona…
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In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO$_3$, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO$_3$, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO$_2$/SrO interface configuration, leading to excess charge being pinned near the LaAlO$_3$/SrRuO$_3$ interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO$_3$, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
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Submitted 7 July, 2021;
originally announced July 2021.
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Non-universal current flow near the metal-insulator transition in an oxide interface
Authors:
Eylon Persky,
Naor Vardi,
Ana Mafalda R. V. L. Monteiro,
Thierry C. van Thiel,
Hyeok Yoon,
Yanwu Xie,
Benoît Fauqué,
Andrea D. Caviglia,
Harold Y. Hwang,
Kamran Behnia,
Jonathan Ruhman,
Beena Kalisky
Abstract:
In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by cha…
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In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming. Our results offer a generic platform to engineer electronic transitions on the nanoscale.
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Submitted 15 March, 2021;
originally announced March 2021.
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Coupling lattice instabilities across the interface in ultrathin oxide heterostructures
Authors:
T. C. van Thiel,
J. Fowlie,
C. Autieri,
N. Manca,
M. Šiškins,
D. Afanasiev,
S. Gariglio,
A. D. Caviglia
Abstract:
Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of…
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Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of $\text{SrIrO}_3$, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, $\text{SrIrO}_3$ orthorhombic domains couple directly to tetragonal domains in $\text{SrTiO}_3$. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the $\text{SrIrO}_3$ film. The close proximity to the metal-insulator transition in ultrathin $\text{SrIrO}_3$ causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.
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Submitted 24 February, 2020;
originally announced February 2020.
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Berry phase engineering at oxide interfaces
Authors:
D. J. Groenendijk,
C. Autieri,
T. C. van Thiel,
W. Brzezicki,
N. Gauquelin,
P. Barone,
K. H. W. van den Bos,
S. van Aert,
J. Verbeeck,
A. Filippetti,
S. Picozzi,
M. Cuoco,
A. D. Caviglia
Abstract:
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle cha…
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Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.
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Submitted 12 October, 2018;
originally announced October 2018.
