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Bichromatic Rabi control of semiconductor qubits
Authors:
Valentin John,
Francesco Borsoi,
Zoltán György,
Chien-An Wang,
Gábor Széchenyi,
Floor van Riggelen,
William I. L. Lawrie,
Nico W. Hendrickx,
Amir Sammak,
Giordano Scappucci,
András Pályi,
Menno Veldhorst
Abstract:
Electrically-driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially-selective approach for large qubit arrays. By applying simultaneous microwave bursts to different…
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Electrically-driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially-selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving.
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Submitted 3 August, 2023;
originally announced August 2023.
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Shared control of a 16 semiconductor quantum dot crossbar array
Authors:
Francesco Borsoi,
Nico W. Hendrickx,
Valentin John,
Sayr Motz,
Floor van Riggelen,
Amir Sammak,
Sander L. de Snoo,
Giordano Scappucci,
Menno Veldhorst
Abstract:
The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access a…
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The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access architectures in classical electronics, we introduce the shared control of semiconductor quantum dots to efficiently operate a two-dimensional crossbar array in planar germanium. We tune the entire array, comprising 16 quantum dots, to the few-hole regime and, to isolate an unpaired spin per dot, we confine an odd number of holes in each site. Moving forward, we establish a method for the selective control of the quantum dots interdot coupling and achieve a tunnel coupling tunability over more than 10 GHz. The operation of a quantum electronic device with fewer control terminals than tunable experimental parameters represents a compelling step forward in the construction of scalable quantum technology.
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Submitted 14 September, 2022;
originally announced September 2022.
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Phase flip code with semiconductor spin qubits
Authors:
F. van Riggelen,
W. I. L. Lawrie,
M. Russ,
N. W. Hendrickx,
A. Sammak,
M. Rispler,
B. M. Terhal,
G. Scappucci,
M. Veldhorst
Abstract:
The fault-tolerant operation of logical qubits is an important requirement for realizing a universal quantum computer. Spin qubits based on quantum dots have great potential to be scaled to large numbers because of their compatibility with standard semiconductor manufacturing. Here, we show that a quantum error correction code can be implemented using a four-qubit array in germanium. We demonstrat…
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The fault-tolerant operation of logical qubits is an important requirement for realizing a universal quantum computer. Spin qubits based on quantum dots have great potential to be scaled to large numbers because of their compatibility with standard semiconductor manufacturing. Here, we show that a quantum error correction code can be implemented using a four-qubit array in germanium. We demonstrate a resonant SWAP gate and by combining controlled-Z and controlled-$\text{S}^{-1}$ gates we construct a Toffoli-like three-qubit gate. We execute a two-qubit phase flip code and find that we can preserve the state of the data qubit by applying a refocusing pulse to the ancilla qubit. In addition, we implement a phase flip code on three qubits, making use of a Toffoli-like gate for the final correction step. Both the quality and quantity of the qubits will require significant improvement to achieve fault-tolerance. However, the capability to implement quantum error correction codes enables co-design development of quantum hardware and software, where codes tailored to the properties of spin qubits and advances in fabrication and operation can now come together to scale semiconductor quantum technology toward universal quantum computers.
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Submitted 23 February, 2022;
originally announced February 2022.
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Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
Authors:
W. I. L. Lawrie,
M. Rimbach-Russ,
F. van Riggelen,
N. W. Hendrickx,
S. L. de Snoo,
A. Sammak,
G. Scappucci,
J. Helsen,
M. Veldhorst
Abstract:
Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we pre…
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Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%. Furthermore, we benchmark single qubit gate performance while simultaneously driving two and four qubits, utilizing a novel benchmarking technique called N-copy randomized benchmarking, designed for simple experimental implementation and accurate simultaneous gate fidelity estimation. We find two- and four-copy randomized benchmarking fidelities of 99.905(8)% and 99.34(4)% respectively, and that next-nearest neighbour pairs are highly robust to cross-talk errors. These characterizations of single-qubit gate quality are crucial for scaling up quantum information technology.
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Submitted 26 July, 2023; v1 submitted 16 September, 2021;
originally announced September 2021.
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A four-qubit germanium quantum processor
Authors:
N. W. Hendrickx,
W. I. L. Lawrie,
M. Russ,
F. van Riggelen,
S. L. de Snoo,
R. N. Schouten,
A. Sammak,
G. Scappucci,
M. Veldhorst
Abstract:
The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive studies on various materials have led to demonstrations of two-qubit logic in gallium arsenide, silicon, and germanium. However, interconnecting larger numbers of qubits in semiconductor devices has remained an outstandi…
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The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive studies on various materials have led to demonstrations of two-qubit logic in gallium arsenide, silicon, and germanium. However, interconnecting larger numbers of qubits in semiconductor devices has remained an outstanding challenge. Here, we demonstrate a four-qubit quantum processor based on hole spins in germanium quantum dots. Furthermore, we define the quantum dots in a two-by-two array and obtain controllable coupling along both directions. Qubit logic is implemented all-electrically and the exchange interaction can be pulsed to freely program one-qubit, two-qubit, three-qubit, and four-qubit operations, resulting in a compact and high-connectivity circuit. We execute a quantum logic circuit that generates a four-qubit Greenberger-Horne-Zeilinger state and we obtain coherent evolution by incorporating dynamical decoupling. These results are an important step towards quantum error correction and quantum simulation with quantum dots.
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Submitted 9 September, 2020;
originally announced September 2020.
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A two-dimensional array of single-hole quantum dots
Authors:
F. van Riggelen,
N. W. Hendrickx,
W. I. L. Lawrie,
M. Russ,
A. Summak,
G. Scappucci,
M. Veldhorst
Abstract:
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots positioned in a linear arrangement, scalability along two dimensions is a key step toward practical quantum information processing. Here we demonstrate a two-dime…
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Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots positioned in a linear arrangement, scalability along two dimensions is a key step toward practical quantum information processing. Here we demonstrate a two-dimensional quantum dot array where each quantum dot is tuned to single-charge occupancy, verified by simultaneous measuring with two integrated radio frequency charge sensors. We achieve this by using planar germanium quantum dots with low disorder and small effective mass, allowing the incorporation of dedicated barrier gates to control the coupling of the quantum dots. We demonstrate hole charge filling consistent with a Fock-Darwin spectrum and show that we can tune single-hole quantum dots from isolated quantum dots to strongly exchange coupled quantum dots. These results motivate the use of planar germanium quantum dots as building blocks for quantum simulation and computation.
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Submitted 26 August, 2020;
originally announced August 2020.
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Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
Authors:
W. I. L. Lawrie,
N. W. Hendrickx,
F. van Riggelen,
M. Russ,
L. Petit,
A. Sammak,
G. Scappucci,
M. Veldhorst
Abstract:
We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole…
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We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole occupation and 1.2 ms for a quantum dot occupied by five-holes, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate the qubit addressability and sensitivity to electric fields by measuring the resonance frequency dependence of each qubit on gate voltages. We are able to tune the resonance frequency over a large range for both the single and multi-hole qubit. Simultaneously, we find that the resonance frequencies are only weakly dependent on neighbouring gates, and in particular the five-hole qubit resonance frequency is more than twenty times as sensitive to its corresponding plunger gate. The excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information.
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Submitted 22 June, 2020;
originally announced June 2020.
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Quantum Dot Arrays in Silicon and Germanium
Authors:
W. I. L. Lawrie,
H. G. J. Eenink,
N. W. Hendrickx,
J. M. Boter,
L. Petit,
S. V. Amitonov,
M. Lodari,
B. Paquelet Wuetz,
C. Volk,
S. Philips,
G. Droulers,
N. Kalhor,
F. van Riggelen,
D. Brousse,
A. Sammak,
L. M. K. Vandersypen,
G. Scappucci,
M. Veldhorst
Abstract:
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb…
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Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlap** gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.
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Submitted 14 September, 2019;
originally announced September 2019.
