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Exciton transport in a germanium quantum dot ladder
Authors:
T. -K. Hsiao,
P. Cova Fariña,
S. D. Oosterhout,
D. Jirovec,
X. Zhang,
C. J. van Diepen,
W. I. L. Lawrie,
C. -A. Wang,
A. Sammak,
G. Scappucci,
M. Veldhorst,
E. Demler,
L. M. K. Vandersypen
Abstract:
Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a g…
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Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a germanium 4$\times$2 quantum dot array and show that the naturally occurring long-range Coulomb interaction can lead to exciton formation and transport. We tune the quantum dot ladder into two capacitively-coupled channels and exploit Coulomb drag to probe the binding of electrons and holes. Specifically, we shuttle an electron through one leg of the ladder and observe that a hole is dragged along in the second leg under the right conditions. This corresponds to a transition from single-electron transport in one leg to exciton transport along the ladder. Our work paves the way for the study of excitonic states of matter in quantum dot arrays.
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Submitted 5 July, 2023;
originally announced July 2023.
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Collective super- and subradiant dynamics between distant optical quantum emitters
Authors:
Alexey Tiranov,
Vasiliki Angelopoulou,
Cornelis Jacobus van Diepen,
Björn Schrinski,
Oliver August Dall'Alba Sandberg,
Ying Wang,
Leonardo Midolo,
Sven Scholz,
Andreas Dirk Wieck,
Arne Ludwig,
Anders Søndberg Sørensen,
Peter Lodahl
Abstract:
Photon emission is the hallmark of light-matter interaction and the foundation of photonic quantum science, enabling advanced sources for quantum communication and computing. Although single-emitter radiation can be tailored by the photonic environment, the introduction of multiple emitters extends this picture. A fundamental challenge, however, is that the radiative dipole-dipole coupling rapidly…
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Photon emission is the hallmark of light-matter interaction and the foundation of photonic quantum science, enabling advanced sources for quantum communication and computing. Although single-emitter radiation can be tailored by the photonic environment, the introduction of multiple emitters extends this picture. A fundamental challenge, however, is that the radiative dipole-dipole coupling rapidly decays with spatial separation, typically within a fraction of the optical wavelength. We realize distant dipole-dipole radiative coupling with pairs of solid-state optical quantum emitters embedded in a nanophotonic waveguide. We dynamically probe the collective response and identify both super- and subradiant emission as well as means to control the dynamics by proper excitation techniques. Our work constitutes a foundational step toward multiemitter applications for scalable quantum-information processing.
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Submitted 29 January, 2023; v1 submitted 5 October, 2022;
originally announced October 2022.
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Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry
Authors:
Johannes Knörzer,
Cornelis J. van Diepen,
Tzu-Kan Hsiao,
Géza Giedke,
Uditendu Mukhopadhyay,
Christian Reichl,
Werner Wegscheider,
J. Ignacio Cirac,
Lieven M. K. Vandersypen
Abstract:
Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a c…
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Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.
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Submitted 14 February, 2022;
originally announced February 2022.
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Quantum simulation of antiferromagnetic Heisenberg chain with gate-defined quantum dots
Authors:
C. J. van Diepen,
T. -K. Hsiao,
U. Mukhopadhyay,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum system…
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Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum systems with engineered Hamiltonians can be used as simulators of such spin physics to provide insights beyond the capabilities of analytical methods and classical computers. To be useful, methods for the preparation of intricate many-body spin states and access to relevant observables are required. Here, we show the quantum simulation of magnetism in the Mott-insulator regime with a linear quantum-dot array. We characterize the energy spectrum for a Heisenberg spin chain, from which we can identify when the conditions for homogeneous exchange couplings are met. Next, we study the multispin coherence with global exchange oscillations in both the singlet and triplet subspace of the Heisenberg Hamiltonian. Last, we adiabatically prepare the low-energy global singlet of the homogeneous spin chain and probe it with two-spin singlettriplet measurements on each nearest-neighbor pair and the correlations therein. The methods and control presented here open new opportunities for the simulation of quantum magnetism benefiting from the flexibility in tuning and layout of gate-defined quantum-dot arrays.
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Submitted 17 November, 2021; v1 submitted 15 March, 2021;
originally announced March 2021.
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Electron cascade for spin readout
Authors:
C. J. van Diepen,
T. -K. Hsiao,
U. Mukhopadhyay,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge tran…
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Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation.
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Submitted 20 February, 2020;
originally announced February 2020.
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Efficient orthogonal control of tunnel couplings in a quantum dot array
Authors:
T. -K. Hsiao,
C. J. van Diepen,
U. Mukhopadhyay,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific…
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Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.
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Submitted 21 January, 2020;
originally announced January 2020.
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Loading a quantum-dot based "Qubyte" register
Authors:
C. Volk,
A. M. J. Zwerver,
U. Mukhopadhyay,
P. T. Eendebak,
C. J. van Diepen,
J. P. Dehollain,
T. Hensgens,
T. Fujita,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots i…
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Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots is unaffected. The method allows individual control of the number of electrons on each of the dots, as well as of the interdot tunnel rates. We use this technique to tune up a linear array of eight GaAs quantum dots such that they are occupied by one electron each. This new method overcomes a critical bottleneck in scaling up quantum-dot based qubit registers.
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Submitted 2 January, 2019;
originally announced January 2019.
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Automated tuning of inter-dot tunnel couplings in quantum dot arrays
Authors:
C. J. van Diepen,
P. T. Eendebak,
B. T. Buijtendorp,
U. Mukhopadhyay,
T. Fujita,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of ini…
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Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in a linear array of gate-defined semiconductor quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
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Submitted 27 March, 2018;
originally announced March 2018.
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Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
Authors:
T. Hensgens,
T. Fujita,
L. Janssen,
Xiao Li,
C. J. Van Diepen,
C. Reichl,
W. Wegscheider,
S. Das Sarma,
L. M. K. Vandersypen
Abstract:
Interacting fermions on a lattice can develop strong quantum correlations, which lie at the heart of the classical intractability of many exotic phases of matter. Seminal efforts are underway in the control of artificial quantum systems, that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction band electrons define interacting quantum coherent spin and…
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Interacting fermions on a lattice can develop strong quantum correlations, which lie at the heart of the classical intractability of many exotic phases of matter. Seminal efforts are underway in the control of artificial quantum systems, that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical pure-state initialisation and readily adhere to an engineerable Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder inherent to solid state has made attempts at emulating Fermi-Hubbard physics on solid-state platforms few and far between. Here, we show that for gate-defined quantum dots, this disorder can be suppressed in a controlled manner. Novel insights and a newly developed semi-automated and scalable toolbox allow us to homogeneously and independently dial in the electron filling and nearest-neighbour tunnel coupling. Bringing these ideas and tools to fruition, we realize the first detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here show how quantum dots can be used to investigate the physics of ever more complex many-body states.
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Submitted 24 February, 2017;
originally announced February 2017.