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Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys
Authors:
Anh-Luan Phan,
Alessandro Pecchia,
Alessia Di Vito,
Matthias Auf der Maur
Abstract:
We analyze and present applications of a recently proposed empirical tight-binding scheme for investigating the effects of alloy disorder on various electronic and optical properties of semiconductor alloys, such as the band gap variation, the localization of charge carriers, and the optical transitions. The results for a typical antimony-containing III-V alloy, GaAsSb, show that the new scheme gr…
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We analyze and present applications of a recently proposed empirical tight-binding scheme for investigating the effects of alloy disorder on various electronic and optical properties of semiconductor alloys, such as the band gap variation, the localization of charge carriers, and the optical transitions. The results for a typical antimony-containing III-V alloy, GaAsSb, show that the new scheme greatly improves the accuracy in reproducing the experimental alloy band gaps compared to other widely used schemes. The atomistic nature of the empirical tight-binding approach paired with a reliable parameterization enables more detailed physical insights into the effects of disorder in alloyed materials.
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Submitted 30 January, 2024;
originally announced January 2024.
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Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells
Authors:
M. Auf der Maur,
G. Moses,
J. M. Gordon,
X. Huang,
Y. Zhao,
E. A. Katz
Abstract:
We have analyzed the temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperatur…
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We have analyzed the temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley-Read-Hall lifetime is used and device heating is taken into account.
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Submitted 5 April, 2021;
originally announced April 2021.
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Unraveling the "Green Gap" problem: The role of random alloy fluctuations in InGaN/GaN light emitting diodes
Authors:
Matthias Auf der Maur,
Alessandro Pecchia,
Gabriele Penazzi,
Walter Rodrigues,
Aldo Di Carlo
Abstract:
White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches withou…
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White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, in particular in the green/yellow range ov the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap", whose physical origin has not been understood completely so far. In this work we show by atomistic simulations that a consistent part of the "green gap" in c-plane InGaN/GaN based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing Indium content due to random fluctuations of the Indium concentration naturally present in any InGaN alloy.
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Submitted 27 October, 2015;
originally announced October 2015.
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Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates
Authors:
M. Hugues,
P. A. Shields,
F. Sacconi,
M. Mexis,
M. Auf der Maur,
M. Cooke,
M. Dineen,
A. Di Carlo,
D. W. E. Allsopp,
J. Zúñiga-Pérez
Abstract:
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strain…
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Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.
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Submitted 30 May, 2013;
originally announced May 2013.
