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Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Authors:
D. Tedeschi,
M. De Luca,
P. E. Faria Junior,
A. Granados del Águila,
Q. Gao,
H. H. Tan,
B. Scharf,
P. C. M. Christianen,
C. Jagadish,
J. Fabian,
A. Polimeni
Abstract:
In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field…
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In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field oriented parallel and perpendicular to the nanowire long axis. Furthermore, for magnetic fields oriented along the nanowire axis, $g_{exc}$ is nearly three times larger than in bulk zincblende InP and it shows a marked sublinear dependence on the magnetic field, a common feature to other non-nitride III-V wurtzite nanowires but not properly understood. Remarkably, this nonlinearity originates from only one Zeeman branch characterized by a specific type of light polarization. All the experimental findings are modeled theoretically by a robust approach combining the $k \cdot p$ method with the envelope function approximation and including the electron-hole interaction. We revealed that the nonlinear features arise due to the coupling between Landau levels pertaining to the A (heavy-hole like) and B (light-hole like) valence bands of the wurtzite crystal structure. This general behavior is particularly relevant for the understanding of the spin properties of several wurtzite nanowires that host the set for the observation of topological phases potentially at the base of quantum computing platforms.
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Submitted 12 November, 2018;
originally announced November 2018.
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Excitonic valley effects in monolayer WS$_2$ under high magnetic fields
Authors:
Gerd Plechinger,
Philipp Nagler,
Ashish Arora,
Andrés Granados del Águila,
Mariana V. Ballottin,
Tobias Frank,
Philipp Steinleitner,
Martin Gmitra,
Jaroslav Fabian,
Peter C. M. Christianen,
Rudolf Bratschitsch,
Christian Schüller,
Tobias Korn
Abstract:
Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulphide in high magnetic fields up to 30\,T via photoluminescence spectroscopy at low temperatures. The…
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Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulphide in high magnetic fields up to 30\,T via photoluminescence spectroscopy at low temperatures. The valley degeneracy is lifted for all optical features, particularly for excitons, singlet and triplet trions, for which we determine the g factor separately. While the observation of a diamagnetic shift of the exciton and trion resonances gives us insight into the real-space extension of these quasiparticles, magnetic field induced valley polarization effects shed light onto the exciton and trion dispersion relations in reciprocal space. The field dependence of the trion valley polarizations is in line with the predicted trion splitting into singlet and triplet configurations.
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Submitted 9 December, 2016;
originally announced December 2016.
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Optical investigation of monolayer and bulk tungsten diselenide (WSe$_{2}$) in high magnetic fields
Authors:
A. A. Mitioglu,
P. Plochocka,
Á. Granados del Aguila,
P. C. M. Christianen,
G. Deligeorgis,
S. Anghel,
L. Kulyuk,
D. K. Maude
Abstract:
Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the magnetic field and exhibits a splitting which originates from the magnetic field induced valley splitting. The monolayer data can be described using a single par…
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Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the magnetic field and exhibits a splitting which originates from the magnetic field induced valley splitting. The monolayer data can be described using a single particle picture with a Dirac-like Hamiltonian for massive Dirac fermions, with an additional term to phenomenologically include the valley splitting. In contrast, in bulk WSe$_{2}$ where the inversion symmetry is restored, transmission measurements show a distinctly excitonic behavior with absorption to the 1s and 2s states. Magnetic field induces a spin splitting together with a small diamagnetic shift and cyclotron like behavior at high fields, which is best described within the hydrogen model.
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Submitted 15 June, 2015; v1 submitted 12 June, 2015;
originally announced June 2015.
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High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire
Authors:
P. Plochocka,
A. A. Mitioglu,
D. K. Maude,
G. L. J. A. Rikken,
A. Granados del Aguila,
P. C. M. Christianen,
P. Kacman,
Hadas Shtrikman
Abstract:
Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial…
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Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.
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Submitted 13 May, 2013;
originally announced May 2013.
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Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures
Authors:
V. K. Guduru,
A. Granados del Aguila,
S. Wenderich,
M. K. Kruize,
A. McCollam,
P. C. M. Christianen,
U. Zeitler,
A. Brinkman,
G. Rijnders,
H. Hilgenkamp,
J. C. Maan
Abstract:
The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongl…
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The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high-mobility electron channel in addition to a low-mobility electron channel which exists before illumination.
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Submitted 20 November, 2012;
originally announced November 2012.