A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window
Authors:
Fabien Defrance,
Cecile Jung-Kubiak,
Jack Sayers,
Jake Connors,
Clare deYoung,
Matthew I. Hollister,
Hiroshige Yoshida,
Goutam Chattopadhyay,
Sunil R. Golwala,
Simon J. E. Radford
Abstract:
Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive ion etching (DRIE). A wafer with this treatment on both sides has <-20 dB (<1…
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Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive ion etching (DRIE). A wafer with this treatment on both sides has <-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bonding wafers introduces no reflection features above the -20 dB level, reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.
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Submitted 28 May, 2018; v1 submitted 14 March, 2018;
originally announced March 2018.
