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Helical trilayer graphene: a moiré platform for strongly-interacting topological bands
Authors:
Li-Qiao Xia,
Sergio C. de la Barrera,
Aviram Uri,
Aaron Sharpe,
Yves H. Kwan,
Ziyan Zhu,
Kenji Watanabe,
Takashi Taniguchi,
David Goldhaber-Gordon,
Liang Fu,
Trithep Devakul,
Pablo Jarillo-Herrero
Abstract:
Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems wit…
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Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems with broken $xy$-inversion symmetry ($C_{2z}$) that host flat electronic bands. Here, we explore helical trilayer graphene (HTG), three graphene layers twisted sequentially by the same angle forming two misoriented moiré patterns. Although HTG is globally $C_{2z}$-symmetric, surprisingly we observe clear signatures of topological bands. At a magic angle $θ_\mathrm{m}\approx 1.8^\circ$, we uncover a robust phase diagram of correlated and magnetic states using magnetotransport measurements. Lattice relaxation leads to large periodic domains in which $C_{2z}$ is broken on the moiré scale. Each domain harbors flat topological bands with valley-contrasting Chern numbers $\pm(1,-2)$. We find correlated states at integer electron fillings per moiré unit cell $ν=1,2,3$ and fractional fillings $2/3,7/2$ with the AHE arising at $ν=1,3$ and $2/3,7/2$. At $ν=1$, a time-reversal symmetric phase appears beyond a critical electric displacement field, indicating a topological phase transition. Finally, hysteresis upon swee** $ν$ points to first-order phase transitions across a spatial mosaic of Chern domains separated by a network of topological gapless edge states. We establish HTG as an important platform that realizes ideal conditions for exploring strongly interacting topological phases and, due to its emergent moiré-scale symmetries, demonstrates a novel way to engineer topology.
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Submitted 18 October, 2023;
originally announced October 2023.
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Superconductivity and strong interactions in a tunable moiré quasiperiodic crystal
Authors:
Aviram Uri,
Sergio C. de la Barrera,
Mallika T. Randeria,
Daniel Rodan-Legrain,
Trithep Devakul,
Philip J. D. Crowley,
Nisarga Paul,
Kenji Watanabe,
Takashi Taniguchi,
Ron Lifshitz,
Liang Fu,
Raymond C. Ashoori,
Pablo Jarillo-Herrero
Abstract:
Electronic states in quasiperiodic crystals generally preclude a Bloch description, rendering them simultaneously fascinating and enigmatic. Owing to their complexity and relative scarcity, quasiperiodic crystals are underexplored relative to periodic and amorphous structures. Here, we introduce a new type of highly tunable quasiperiodic crystal easily assembled from periodic components. By twisti…
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Electronic states in quasiperiodic crystals generally preclude a Bloch description, rendering them simultaneously fascinating and enigmatic. Owing to their complexity and relative scarcity, quasiperiodic crystals are underexplored relative to periodic and amorphous structures. Here, we introduce a new type of highly tunable quasiperiodic crystal easily assembled from periodic components. By twisting three layers of graphene with two different twist angles, we form two moiré patterns with incommensurate moiré unit cells. In contrast to many common quasiperiodic structures that are defined on the atomic scale, the quasiperiodicity in our system is defined on moiré length scales of several nanometers. This novel "moiré quasiperiodic crystal" allows us to tune the chemical potential and thus the electronic system between a periodic-like regime at low energies and a strongly quasiperiodic regime at higher energies, the latter hosting a large density of weakly dispersing states. Interestingly, in the quasiperiodic regime we observe superconductivity near a flavor-symmetry-breaking phase transition, the latter indicative of the important role electronic interactions play in that regime. The prevalence of interacting phenomena in future systems with in situ tunability is not only useful for the study of quasiperiodic systems, but it may also provide insights into electronic ordering in related periodic moiré crystals. We anticipate that extending this new platform to engineer quasiperiodic crystals by varying the number of layers and twist angles, and by using different two-dimensional components, will lead to a new family of quantum materials to investigate the properties of strongly interacting quasiperiodic crystals.
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Submitted 1 February, 2023;
originally announced February 2023.
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Cascade of isospin phase transitions in Bernal bilayer graphene at zero magnetic field
Authors:
Sergio C. de la Barrera,
Samuel Aronson,
Zhiren Zheng,
Kenji Watanabe,
Takashi Taniguchi,
Qiong Ma,
Pablo Jarillo-Herrero,
Raymond Ashoori
Abstract:
Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer graphene intrinsically supports a pair of flat bands predicted to host a variety of spontaneous broken-symmetry states arising from van Hove singularities and a…
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Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer graphene intrinsically supports a pair of flat bands predicted to host a variety of spontaneous broken-symmetry states arising from van Hove singularities and a four-fold spin-valley (isospin) degeneracy. Here, we show that ultra-clean samples of bilayer graphene display a cascade of symmetry-broken states with spontaneous and spin and valley ordering at zero magnetic field. Using capacitive sensing in a dual-gated geometry, we tune the carrier density and electric displacement field independently to explore the phase space of transitions and probe the character of the isospin order. Itinerant ferromagnetic states emerge near the conduction and valence band edges with complete spin and valley polarization and a high degree of displacement field tunability. At larger hole densities, two-fold degenerate quantum oscillations manifest in an additional broken symmetry state that is enhanced by the application of an in-plane magnetic field. Both types of symmetry-broken states display enhanced layer polarization at low temperatures, suggesting a coupling to the layer pseudospin degree of freedom in the electronic wavefunctions. Notably, the zero-field spontaneous symmetry breaking reported here emerges in the absence of a moiré superlattice and is intrinsic to natural graphene bilayers. Thus, we demonstrate that the tunable bands of bilayer graphene represent a related, but distinct approach to produce flat band collective behavior, complementary to engineered moiré structures.
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Submitted 26 October, 2021;
originally announced October 2021.
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Direct measurement of ferroelectric polarization in a tunable semimetal
Authors:
Sergio C. de la Barrera,
Qingrui Cao,
Yang Gao,
Yuan Gao,
Vineetha S. Bheemarasetty,
Jiaqiang Yan,
David G. Mandrus,
Wenguang Zhu,
Di Xiao,
Benjamin M. Hunt
Abstract:
Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe$_2$, a semimetallic transition metal dichal…
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Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe$_2$, a semimetallic transition metal dichalcogenide with broken inversion symmetry. An especially promising aspect of this system is that the density of electrons and holes can be continuously tuned by an external gate voltage. This degree of freedom enables investigation of the interplay between ferroelectricity and free carriers, a previously unexplored regime. Here, we employ capacitive sensing in dual-gated mesoscopic devices of bilayer WTe$_2$ to directly measure the spontaneous polarization in the metallic state and quantify the effect of free carriers on the polarization in the conduction and valence bands, separately. We compare our results to a low-energy model for the electronic bands and identify the layer-polarized states that contribute to transport and polarization simultaneously. Bilayer WTe$_2$ is thus shown to be a canonical example of a ferroelectric metal and an ideal platform for exploring polar ordering, ferroelectric transitions, and applications in the presence of free carriers.
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Submitted 9 December, 2020;
originally announced December 2020.
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Highly Tunable Junctions and Nonlocal Josephson Effect in Magic Angle Graphene Tunneling Devices
Authors:
Daniel Rodan-Legrain,
Yuan Cao,
Jeong Min Park,
Sergio C. de la Barrera,
Mallika T. Randeria,
Kenji Watanabe,
Takashi Taniguchi,
Pablo Jarillo-Herrero
Abstract:
Magic-angle twisted bilayer graphene (MATBG) has recently emerged as a highly tunable two-dimensional (2D) material platform exhibiting a wide range of phases, such as metal, insulator, and superconductor states. Local electrostatic control over these phases may enable the creation of versatile quantum devices that were previously not achievable in other single material platforms. Here, we exploit…
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Magic-angle twisted bilayer graphene (MATBG) has recently emerged as a highly tunable two-dimensional (2D) material platform exhibiting a wide range of phases, such as metal, insulator, and superconductor states. Local electrostatic control over these phases may enable the creation of versatile quantum devices that were previously not achievable in other single material platforms. Here, we exploit the electrical tunability of MATBG to engineer Josephson junctions and tunneling transistors all within one material, defined solely by electrostatic gates. Our multi-gated device geometry offers complete control over the Josephson junction, with the ability to independently tune the weak link, barriers, and tunneling electrodes. We show that these purely 2D MATBG Josephson junctions exhibit nonlocal electrodynamics in a magnetic field, in agreement with the Pearl theory for ultrathin superconductors. Utilizing the intrinsic bandgaps of MATBG, we also demonstrate monolithic edge tunneling spectroscopy within the same MATBG devices and measure the energy spectrum of MATBG in the superconducting phase. Furthermore, by inducing a double barrier geometry, the devices can be operated as a single-electron transistor, exhibiting Coulomb blockade. These MATBG tunneling devices, with versatile functionality encompassed within a single material, may find applications in graphene-based tunable superconducting qubits, on-chip superconducting circuits, and electromagnetic sensing in next-generation quantum nanoelectronics.
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Submitted 4 November, 2020;
originally announced November 2020.
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Superconducting Contact and Quantum Interference Between Two-Dimensional van der Waals and Three-Dimensional Conventional Superconductors
Authors:
Michael R. Sinko,
Sergio C. de la Barrera,
Olivia Lanes,
Kenji Watanabe,
Takashi Taniguchi,
Susheng Tan,
David Pekker,
Michael Hatridge,
Benjamin M. Hunt
Abstract:
Two-dimensional (2D) transition-metal dichalcogenide superconductors have unique and desirable properties for integration with conventional superconducting circuits. However, fully superconducting contact must be made between the 2D material and three-dimensional (3D) superconductors in order to employ the standard microwave drive and readout of qubits in such circuits. Here, we present a method f…
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Two-dimensional (2D) transition-metal dichalcogenide superconductors have unique and desirable properties for integration with conventional superconducting circuits. However, fully superconducting contact must be made between the 2D material and three-dimensional (3D) superconductors in order to employ the standard microwave drive and readout of qubits in such circuits. Here, we present a method for creating zero-resistance contacts between 2D NbSe$_2$ and 3D aluminum that behave as Josephson junctions (JJs) with large effective areas compared to 3D-3D JJs. We present a model for the supercurrent flow in a 2D-3D superconducting structure by numerical solution of the Ginzburg-Landau equations and find good agreement with experiment. These results demonstrate a crucial step towards a new generation of hybrid superconducting quantum circuits.
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Submitted 22 June, 2020; v1 submitted 21 November, 2019;
originally announced November 2019.
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Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$
Authors:
Felix Lüpke,
Dacen Waters,
Sergio C. de la Barrera,
Michael Widom,
David G. Mandrus,
Jiaqiang Yan,
Randall M. Feenstra,
Benjamin M. Hunt
Abstract:
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present…
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The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.
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Submitted 16 July, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
Authors:
Randall M. Feenstra,
Sergio C. de la Barrera,
Jun Li,
Yifan Nie,
Kyeongjae Cho
Abstract:
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of…
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Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of the graphene and the h-BN, predicted currents are found to be about 15x larger than experimental values. A reduction in this discrepancy, to a factor of 2.5x, is achieved by utilizing a realistic size for the band gap of the h-BN, hence affecting the exponential decay constant for the tunneling.
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Submitted 9 January, 2018; v1 submitted 29 December, 2017;
originally announced December 2017.
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Tuning Ising superconductivity with layer and spin-orbit coupling in two-dimensional transition-metal dichalcogenides
Authors:
Sergio C. de la Barrera,
Michael R. Sinko,
Devashish P. Gopalan,
Nikhil Sivadas,
Kyle L. Seyler,
Kenji Watanabe,
Takashi Taniguchi,
Adam W. Tsen,
Xiaodong Xu,
Di Xiao,
Benjamin M. Hunt
Abstract:
Systems that simultaneously exhibit superconductivity and spin-orbit coupling are predicted to provide a route toward topological superconductivity and unconventional electron pairing, driving significant contemporary interest in these materials. Monolayer transition-metal dichalcogenide (TMD) superconductors in particular lack inversion symmetry, enforcing a spin-triplet component of the supercon…
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Systems that simultaneously exhibit superconductivity and spin-orbit coupling are predicted to provide a route toward topological superconductivity and unconventional electron pairing, driving significant contemporary interest in these materials. Monolayer transition-metal dichalcogenide (TMD) superconductors in particular lack inversion symmetry, enforcing a spin-triplet component of the superconducting wavefunction that increases with the strength of spin-orbit coupling. In this work, we present an experimental and theoretical study of two intrinsic TMD superconductors with large spin-orbit coupling in the atomic layer limit, metallic 2H-TaS$_2$ and 2H-NbSe$_2$. For the first time in TaS$_2$, we investigate the superconducting properties as the material is reduced to a monolayer and show that high-field measurements point to the largest upper critical field thus reported for an intrinsic TMD superconductor. In few-layer samples, we find that the enhancement of the upper critical field is sustained by the dominance of spin-orbit coupling over weak interlayer coupling, providing additional platforms for unconventional superconducting states in two dimensions.
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Submitted 1 November, 2017;
originally announced November 2017.
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Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations
Authors:
Sergio C. de la Barrera,
Yu-Chuan Lin,
Sarah M. Eichfeld,
Joshua A. Robinson,
Qin Gao,
Michael Widom,
Randall M. Feenstra
Abstract:
In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the mon…
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In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe$_2$ electron reflectivity.
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Submitted 13 June, 2016;
originally announced June 2016.
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Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
Authors:
Devashish P. Gopalan,
Patrick C. Mende,
Sergio C. de la Barrera,
Shonali Dhingra,
Jun Li,
Kehao Zhang,
Nicholas A. Simonson,
Joshua A. Robinson,
Ning Lu,
Qingxiao Wang,
Moon J. Kim,
Brian D'Urso,
Randall M. Feenstra
Abstract:
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphe…
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Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally graphene is observed to change in a manner that is consistent with the formation of a mixed h-BN/graphene alloy, i.e. h-BNC alloy. Furthermore, following the deposition of the borazine, a small fraction of the surface is found to consist of bare copper, indicating etching of the overlying graphene. The inability to form h-BN layers on top of graphene is discussed in terms of the catalytic behavior of the underlying copper surface and the decomposition of the borazine on top of the graphene.
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Submitted 10 February, 2016; v1 submitted 15 September, 2015;
originally announced September 2015.
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Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
Authors:
Sergio C. de la Barrera,
Randall M. Feenstra
Abstract:
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in th…
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A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.
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Submitted 2 March, 2015; v1 submitted 19 January, 2015;
originally announced January 2015.
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Theory of Graphene-Insulator-Graphene Tunnel Junctions
Authors:
S. C. de la Barrera,
Qin Gao,
R. M. Feenstra
Abstract:
Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the treatments are shown to be formally equivale…
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Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the treatments are shown to be formally equivalent, although some differences in their implementations are identified. The limit of zero momentum conservation in the theory is explicitly considered, with a formula involving the density-of-states of the graphene electrodes recovered in this limit. Various predictions of the theory are compared to experiment.
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Submitted 11 April, 2014; v1 submitted 8 April, 2014;
originally announced April 2014.
