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Quasiparticle and superfluid dynamics in Magic-Angle Graphene
Authors:
Elías Portolés,
Marta Perego,
Pavel A. Volkov,
Mathilde Toschini,
Yana Kemna,
Alexandra Mestre-Torà,
Giulia Zheng,
Artem O. Denisov,
Folkert K. de Vries,
Peter Rickhaus,
Takashi Taniguchi,
Kenji Watanabe,
J. H. Pixley,
Thomas Ihn,
Klaus Ensslin
Abstract:
Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconve…
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Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconventional, strongly coupled and topological superconductivity. A major obstacle to progress in this direction is that key thermodynamic properties, such as specific heat, electron-phonon coupling and superfluid stiffness, are extremely challenging to measure due to the 2D nature of the material and its relatively low energy scales. Here, we use a gate-defined, radio frequency-biased, Josephson junction to probe the electronic dynamics of magic-angle twisted bilayer graphene (MATBG). We reveal both the electronic quasiparticle dynamics, driven by their thermalization through phonon scattering, as well as the condensate dynamics, driven by the inertia of Cooper pairs. From these properties we recover the evolution of thermalization rates, and the superfluid stiffness across the phase diagram. Our findings favor an anisotropic or nodal pairing state and allow to estimate the strength of electron-phonon coupling. These results contribute to understanding the underlying mechanisms of superconductivity in MATBG while establishing an easy-to-implement method for characterizing thermal and superfluid properties of superconducting 2D materials.
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Submitted 10 May, 2024;
originally announced May 2024.
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Gate-defined superconducting channel in magic-angle twisted bilayer graphene
Authors:
Giulia Zheng,
Elías Portolés,
Alexandra Mestre-Torá,
Marta Perego,
Takashi Taniguchi,
Kenji Watanabe,
Peter Rickhaus,
Folkert K. de Vries,
Thomas Ihn,
Klaus Ensslin,
Shuichi Iwakiri
Abstract:
Magic-angle twisted bilayer graphene (MATBG) combines in one single material different phases like insulating, metallic and superconducting. These phases and their in-situ tunability make MATBG an important platform for the fabrication of superconducting devices. We realize a split gate-defined geometry which enables us to tune the width of a superconducting channel formed in MATBG. We observe a s…
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Magic-angle twisted bilayer graphene (MATBG) combines in one single material different phases like insulating, metallic and superconducting. These phases and their in-situ tunability make MATBG an important platform for the fabrication of superconducting devices. We realize a split gate-defined geometry which enables us to tune the width of a superconducting channel formed in MATBG. We observe a smooth transition from superconductivity to highly resistive transport by progressively reducing the channel width using the split gates or by reducing the density in the channel. Using the gate-defined constriction, we control the flow of the supercurrent, either guiding it through the constriction or throughout the whole device or even blocking its passage completely. This serves as a foundation for develo** quantum constriction devices like superconducting quantum point contacts, quantum dots, and Cooper-pair boxes in MATBG.
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Submitted 18 December, 2023;
originally announced December 2023.
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Optical readout of a superconducting qubit using a scalable piezo-optomechanical transducer
Authors:
T. C. van Thiel,
M. J. Weaver,
F. Berto,
P. Duivestein,
M. Lemang,
K. L. Schuurman,
M. Žemlička,
F. Hijazi,
A. C. Bernasconi,
E. Lachman,
M. Field,
Y. Mohan,
F. K. de Vries,
C. C. Bultink,
J. van Oven,
J. Y. Mutus,
R. Stockill,
S. Gröblacher
Abstract:
Superconducting quantum processors have made significant progress in size and computing potential. As a result, the practical cryogenic limitations of operating large numbers of superconducting qubits are becoming a bottleneck for further scaling. Due to the low thermal conductivity and the dense optical multiplexing capacity of telecommunications fiber, converting qubit signal processing to the o…
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Superconducting quantum processors have made significant progress in size and computing potential. As a result, the practical cryogenic limitations of operating large numbers of superconducting qubits are becoming a bottleneck for further scaling. Due to the low thermal conductivity and the dense optical multiplexing capacity of telecommunications fiber, converting qubit signal processing to the optical domain using microwave-to-optics transduction would significantly relax the strain on cryogenic space and thermal budgets. Here, we demonstrate high-fidelity multi-shot optical readout through an optical fiber of a superconducting transmon qubit connected via a coaxial cable to a fully integrated piezo-optomechanical transducer. Using a demolition readout technique, we achieve a multi-shot readout fidelity of >0.99 at 6 $μ$W of optical power transmitted into the cryostat with as few as 200 averages, without the use of a quantum-limited amplifier. With improved frequency matching between the transducer and the qubit readout resonator, we anticipate that single-shot optical readout is achievable. Due to the small footprint (<0.15mm$^2$) and the modular fiber-based architecture, this device platform has the potential to scale towards use with thousands of qubits. Our results illustrate the potential of piezo-optomechanical transduction for low-dissipation operation of large quantum processors.
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Submitted 2 November, 2023; v1 submitted 9 October, 2023;
originally announced October 2023.
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Kagomé quantum oscillations in graphene superlattices
Authors:
Folkert K. de Vries,
Sergey Slizovskiy,
Petar Tomić,
Roshan Krishna Kumar,
Aitor Garcia-Ruiz,
Giulia Zheng,
Elías Portolés,
Leonid A. Ponomarenko,
Andre K. Geim,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Klaus Ensslin,
Thomas Ihn,
Peter Rickhaus
Abstract:
Periodic systems feature the Hofstadter butterfly spectrum produced by Brown--Zak minibands of electrons formed when magnetic field flux through the lattice unit cell is commensurate with flux quantum and manifested by magneto-transport oscillations. Quantum oscillations, such as Shubnikov -- de Haas effect and Aharonov--Bohm effect, are also characteristic for electronic systems with closed orbit…
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Periodic systems feature the Hofstadter butterfly spectrum produced by Brown--Zak minibands of electrons formed when magnetic field flux through the lattice unit cell is commensurate with flux quantum and manifested by magneto-transport oscillations. Quantum oscillations, such as Shubnikov -- de Haas effect and Aharonov--Bohm effect, are also characteristic for electronic systems with closed orbits in real space and reciprocal space. Here we show the intricate relation between these two phenomena by tracing quantum magneto-oscillations to Lifshitz transitions in graphene superlattices, where they persist even at relatively low fields and very much above liquid-helium temperatures. The oscillations originate from Aharonov--Bohm interference on cyclotron trajectories that form a kagomé-shaped network characteristic for Lifshitz transitions. In contrast to Shubnikov - de Haas oscillations, the kagomé oscillations are robust against thermal smearing and they can be detected even when the Hofstadter butterfly spectrum is undermined by electron's scattering. We expect that kagomé quantum oscillations are generic to rotationally-symmetric two-dimensional crystals close to Lifshitz transitions.
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Submitted 30 March, 2023; v1 submitted 11 March, 2023;
originally announced March 2023.
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Gate-defined electron interferometer in bilayer graphene
Authors:
Shuichi Iwakiri,
Folkert K. de Vries,
Elías Portolés,
Giulia Zheng,
Takashi Taniguchi,
Kenji Watanabe,
Thomas Ihn,
Klaus Ensslin
Abstract:
We present an electron interferometer defined purely by electrostatic gating in encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device quality is demonstrated by observing Aharonov-Bohm (AB) oscillations with a period of h/e, h/2e, h/3e, and h/4e, witnessing a coherence length of many microns.…
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We present an electron interferometer defined purely by electrostatic gating in encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device quality is demonstrated by observing Aharonov-Bohm (AB) oscillations with a period of h/e, h/2e, h/3e, and h/4e, witnessing a coherence length of many microns. The AB oscillations as well as the type of carriers (electrons or holes) are seamlessly tunable with gating. The coherence length longer than the ring perimeter and semiclassical trajectory of the carrier are established from the analysis of the temperature and magnetic field dependence of the oscillations. Our gate-defined ring geometry has the potential to evolve into a platform for exploring correlated quantum states such as superconductivity in interferometers in twisted bilayer graphene.
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Submitted 9 May, 2022;
originally announced May 2022.
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A Tunable Monolithic SQUID in Twisted Bilayer Graphene
Authors:
Elías Portolés,
Shuichi Iwakiri,
Giulia Zheng,
Peter Rickhaus,
Takashi Taniguchi,
Kenji Watanabe,
Thomas Ihn,
Klaus Ensslin,
Folkert K. de Vries
Abstract:
Magic-angle twisted bilayer graphene (MATBG) hosts a number of correlated states of matter that can be tuned by electrostatic do**. Superconductivity has drawn considerable attention and the mechanism behind it is a topic of active discussion. MATBG has been experimentally characterized by numerous transport and scanning-probe experiments. The material has also emerged as a versatile platform fo…
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Magic-angle twisted bilayer graphene (MATBG) hosts a number of correlated states of matter that can be tuned by electrostatic do**. Superconductivity has drawn considerable attention and the mechanism behind it is a topic of active discussion. MATBG has been experimentally characterized by numerous transport and scanning-probe experiments. The material has also emerged as a versatile platform for superconducting electronics, as proven by the realization of monolithic Josephson junctions. However, even though phase-coherent phenomena have been measured, no control of the superconducting phase has been demonstrated so far. Here, we present a Superconducting Quantum Interference Device (SQUID) in MATBG, where the superconducting phase difference is controlled through the magnetic field. We observe magneto-oscillations of the critical current, demonstrating long-range coherence agreeing with an effective charge of 2e for the superconducting charge carriers. We tune to both asymmetric and symmetric SQUID configurations by electrostatically controlling the critical currents through the junctions. With this tunability, we study the inductances in the device, finding values of up to 2μH. Furthermore, we directly observe the current-phase relation of one of the Josephson junctions of the device. Our results show that superconducting devices in MATBG can be scaled up and used to reveal properties of the material. We expect this to foster a more systematic realization of devices of this type, increasing the accuracy with which microscopic characteristics of the material are extracted. We also envision more complex devices to emerge, such as phase-slip junctions or high kinetic inductance detectors.
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Submitted 31 January, 2022;
originally announced January 2022.
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Single-shot readout in graphene quantum dots
Authors:
Lisa Maria Gächter,
Rebekka Garreis,
Chuyao Tong,
Max Josef Ruckriegel,
Benedikt Kratochwil,
Folkert Kornelis de Vries,
Annika Kurzmann,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin,
Wister Wei Huang
Abstract:
Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different experimental approaches to measure the decay times of excited states. The first is based on direct current measurements through the quantum device. Pulse sequences are app…
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Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different experimental approaches to measure the decay times of excited states. The first is based on direct current measurements through the quantum device. Pulse sequences are applied to control the occupation of ground and excited states. We observe a lower bound for the excited state decay on the order of hundred microseconds. The second approach employs a capacitively coupled charge sensor to study the time dynamics of the excited state using the Elzerman technique. We find that the relaxation time of the excited state is of the order of milliseconds. We perform single-shot readout of our two-level system with a visibility of $87.1\%$, which is an important step for develo** a quantum information processor in graphene.
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Submitted 22 December, 2021;
originally announced December 2021.
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Tailoring the band structure of twisted double bilayer graphene with pressure
Authors:
Bálint Szentpéteri,
Peter Rickhaus,
Folkert K. de Vries,
Albin Márffy,
Bálint Fülöp,
Endre Tóvári,
Kenji Watanabe,
Takashi Taniguchi,
Andor Kormányos,
Szabolcs Csonka,
Péter Makk
Abstract:
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Her…
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Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Here, we demonstrate that by applying hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically non-trivial band gap opens at the charge neutrality point at zero displacement field.
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Submitted 30 October, 2021; v1 submitted 17 August, 2021;
originally announced August 2021.
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Fabry-Pérot cavities and quantum dot formation at gate-defined interfaces in twisted double bilayer graphene
Authors:
Elías Portolés,
Giulia Zheng,
Folkert K. de Vries,
Jihang Zhu,
Petar Tomić,
Takashi Taniguchi,
Kenji Watanabe,
Allan H. MacDonald,
Klaus Ensslin,
Thomas Ihn,
Peter Rickhaus
Abstract:
The rich and electrostatically tunable phase diagram exhibited by moiré materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and localization across electrostatically defined interfaces is of fundamental importance. Little is known, however, about how the interplay between the band structure orig…
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The rich and electrostatically tunable phase diagram exhibited by moiré materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and localization across electrostatically defined interfaces is of fundamental importance. Little is known, however, about how the interplay between the band structure originating from the moiré lattice and electric potential gradients affects electronic confinement. Here, we electrostatically define a cavity across a twisted double bilayer graphene sample. We observe two kinds of Fabry-Pérot oscillations. The first, independent of charge polarity, stems from confinement of electrons between dispersive-band/flat-band interfaces. The second arises from junctions between regions tuned into different flat bands. When tuning the out-of-plane electric field across the device, we observe Coulomb blockade resonances in transport, an indication of strong electronic confinement. From the gate, magnetic field and source-drain voltage dependence of the resonances, we conclude that quantum dots form at the interfaces of the Fabry-Pérot cavity. Our results constitute a first step towards better understanding interfacial phenomena in single crystal moiré devices.
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Submitted 29 July, 2021;
originally announced July 2021.
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Scattering between minivalleys in a moiré material
Authors:
Petar Tomić,
Peter Rickhaus,
Aitor Garcia-Ruiz,
Giulia Zheng,
Elías Portolés,
Vladimir Fal'ko,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn,
Folkert K. de Vries
Abstract:
A unique feature of the complex band structures of moiré materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between minivalleys - a phenomenon analogous to magneto-intersubband oscillations - in a twisted double bilayer graphene sample with a twist angle of 1.94°. We study and discuss t…
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A unique feature of the complex band structures of moiré materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between minivalleys - a phenomenon analogous to magneto-intersubband oscillations - in a twisted double bilayer graphene sample with a twist angle of 1.94°. We study and discuss the potential scattering mechanisms and find an electron-phonon mechanism and valley conserving scattering to be likely. Finally, we discuss the relevance of our findings for different materials and twist angles.
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Submitted 14 June, 2021;
originally announced June 2021.
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Electron transport in dual-gated three-layer MoS$_2$
Authors:
M. Masseroni,
T. Davatz,
R. Pisoni,
F. K. de Vries,
P. Rickhaus,
T. Taniguchi,
K. Watanabe,
V. Fal'ko,
T. Ihn,
K. Ensslin
Abstract:
The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS…
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The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS$_2$ and both top and bottom gate electrodes. For asymmetrically biased top and bottom gates, electrons accumulate in the layer closest to the positively biased electrode. In this way, the three-layer MoS$_2$ can be tuned to behave electronically like a monolayer. In contrast, applying a positive voltage on both gates leads to the occupation of all three layers. Our analysis of the Shubnikov--de Haas oscillations originating from different bands lets us attribute the corresponding carrier densities in the top and bottom layers. We find a twofold Landau level degeneracy for each band, suggesting that the minima of the conduction band lie at the $\pm K$ points of the first Brillouin zone. This is in contrast to band structure calculations for zero layer asymmetry, which report minima at the $Q$ points. Even though the interlayer tunnel coupling seems to leave the low-energy conduction band unaffected, we observe scattering of electrons between the outermost layers for zero layer asymmetry. The middle layer remains decoupled due to the spin-valley symmetry, which is inverted for neighboring layers. When the bands of the outermost layers are energetically in resonance, interlayer scattering takes place, leading to an enhanced resistance and to magneto-interband oscillations.
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Submitted 29 April, 2021; v1 submitted 18 April, 2021;
originally announced April 2021.
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Kondo effect and spin-orbit coupling in graphene quantum dots
Authors:
Annika Kurzmann,
Yaakov Kleeorin,
Chuyao Tong,
Rebekka Garreis,
Angelika Knothe,
Marius Eich,
Christopher Mittag,
Carolin Gold,
Folkert K. de Vries,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Yigal Meir,
Thomas Ihn,
Klaus Ensslin
Abstract:
The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - re…
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The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.
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Submitted 8 March, 2021;
originally announced March 2021.
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Gate-Defined Josephson Junctions in Magic-Angle Twisted Bilayer Graphene
Authors:
Folkert K. de Vries,
Elias Portoles,
Giulia Zheng,
Takashi Taniguchi,
Kenji Watanabe,
Thomas Ihn,
Klaus Ensslin,
Peter Rickhaus
Abstract:
In the past two years, magic-angle twisted bilayer graphene has emerged as a uniquely versatile experimental platform that combines metallic, superconducting, magnetic and insulating phases in a single crystal. In particular the ability to tune the superconducting state with a gate voltage opened up intriguing prospects for novel device functionality. Here we present the first demonstration of a d…
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In the past two years, magic-angle twisted bilayer graphene has emerged as a uniquely versatile experimental platform that combines metallic, superconducting, magnetic and insulating phases in a single crystal. In particular the ability to tune the superconducting state with a gate voltage opened up intriguing prospects for novel device functionality. Here we present the first demonstration of a device based on the interplay between two distinct phases in adjustable regions of a single magic-angle twisted bilayer graphene crystal. We electrostatically define the superconducting and insulating regions of a Josephson junction and observe tunable DC and AC Josephson effects. We show that superconductivity is induced in different electronic bands and describe the junction behaviour in terms of these bands, taking in consideration interface effects as well. Shapiro steps, a hallmark of the AC Josephson effect and therefore the formation of a Josephson junction, are observed. This work is an initial step towards devices where separate gate-defined correlated states are connected in single-crystal nanostructures. We envision applications in superconducting electronics and quantum information technology as well as in studies exploring the nature of the superconducting state in magic-angle twisted bilayer graphene.
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Submitted 3 November, 2020; v1 submitted 30 October, 2020;
originally announced November 2020.
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Combined minivalley and layer control in twisted double bilayer graphene
Authors:
Folkert K. de Vries,
Jihang Zhu,
Elias Portoles,
Giulia Zheng,
Michele Masseroni,
Annika Kurzmann,
Takashi Taniguchi,
Kenji Watanabe,
Allan H. MacDonald,
Klaus Ensslin,
Thomas Ihn,
Peter Rickhaus
Abstract:
Control over minivalley polarization and interlayer coupling is demonstrated in double bilayer graphene twisted with an angle of 2.37$^\circ$. This intermediate angle is small enough for the minibands to form and large enough such that the charge carrier gases in the layers can be tuned independently. Using a dual-gated geometry we identify and control all possible combinations of minivalley polar…
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Control over minivalley polarization and interlayer coupling is demonstrated in double bilayer graphene twisted with an angle of 2.37$^\circ$. This intermediate angle is small enough for the minibands to form and large enough such that the charge carrier gases in the layers can be tuned independently. Using a dual-gated geometry we identify and control all possible combinations of minivalley polarization via the population of the two bilayers. An applied displacement field opens a band gap in either of the two bilayers, allowing us to even obtain full minivalley polarization. In addition, the wavefunctions of the minivalleys are mixed by tuning through a Lifshitz transition, where the Fermi surface topology changes. The high degree of control makes twisted double bilayer graphene a promising platform for valleytronics devices such as valley valves, filters and logic gates.
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Submitted 26 October, 2020; v1 submitted 12 February, 2020;
originally announced February 2020.
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Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires
Authors:
Joost Ridderbos,
Matthias Brauns,
Jie Shen,
Folkert K. de Vries,
Ang Li,
Sebastian Kölling,
Marcel A. Verheijen,
Alexander Brinkman,
Wilfred G. van der Wiel,
Erik P. A. M. Bakkers,
Floris A. Zwanenburg
Abstract:
We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at…
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We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction.
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Submitted 20 December, 2019; v1 submitted 11 July, 2019;
originally announced July 2019.
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Crossed Andreev Reflection in InSb Flake Josephson Junctions
Authors:
Folkert K. de Vries,
Martijn L. Sol,
Sasa Gazibegovic,
Roy L. M. op het Veld,
Stijn C. Balk,
Diana Car,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Jie Shen
Abstract:
We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific…
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We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific crystal facet of the edge with enhanced conduction, and confirm this by measuring multiple devices. Furthermore, we argue the even-odd effect is due to crossed Andreev reflection, a process where a Cooper pair splits up over the two edges and recombines at the opposite contact. An entirely $h/e$ periodic SQUID pattern, as well as the observation of both even-odd and odd-even effects, corroborates this conclusion. Crossed Andreev reflection could be harnessed for creating a topological state of matter or performing experiments on the non-local spin-entanglement of spatially separated Cooper pairs.
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Submitted 14 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Ballistic superconductivity and tunable $π$-junctions in InSb quantum wells
Authors:
Chung Ting Ke,
Christian M. Moehle,
Folkert K. de Vries,
Candice Thomas,
Sara Metti,
Charles R. Guinn,
Ray Kallaher,
Mario Lodari,
Giordano Scappucci,
Tiantian Wang,
Rosa E. Diaz,
Geoffrey C. Gardner,
Michael J. Manfra,
Srijit Goswami
Abstract:
Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects, superconducting correlations in quantum (spin) Hall systems, hybrid superconducting qubits and emergent topological states in semiconductors with spin-orbit interaction (SOI). InSb is a well-known example of such a st…
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Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects, superconducting correlations in quantum (spin) Hall systems, hybrid superconducting qubits and emergent topological states in semiconductors with spin-orbit interaction (SOI). InSb is a well-known example of such a strong SOI semiconductor, however hybrid superconducting devices in InSb quantum wells remain unexplored. Here, we interface InSb 2DEGs with a superconductor (NbTiN) to create Josephson junctions (JJs), thus providing the first evidence of induced superconductivity in high quality InSb quantum wells. The JJs support supercurrent transport over several microns and display clear signatures of ballistic superconductivity. Furthermore, we exploit the large Landé g-factor and gate tunability of the junctions to control the current-phase relation, and drive transitions between the $0$ and $π$-states. This control over the free energy landscape allows us to construct a phase diagram identifying these $0$ and $π$-regions, in agreement with theory. Our results establish InSb quantum wells as a promising new material platform to study the interplay between superconductivity, SOI and magnetism.
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Submitted 27 February, 2019;
originally announced February 2019.
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Josephson effect in a few-hole quantum dot
Authors:
Joost Ridderbos,
Matthias Brauns,
Jie Shen,
Folkert K. de Vries,
Ang Li,
Erik P. A. M. Bakkers,
Alexander Brinkman,
Floris A. Zwanenburg
Abstract:
We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is…
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We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.
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Submitted 22 September, 2018;
originally announced September 2018.
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Spin-orbit interaction and induced superconductivity in an one-dimensional hole gas
Authors:
F. K. de Vries,
J. Shen,
R. J. Skolasinski,
M. P. Nowak,
D. Varjas,
L. Wang,
M. Wimmer,
J. Ridderbos,
F. A. Zwanenburg,
A. Li,
S. Koelling,
M. A. Verheijen,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) co…
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Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) core-shell nanowires (NWs) as a new material candidate for creating a topological superconductor. Fitting multiple Andreev reflection measurements shows that the NW has two transport channels only, underlining its one-dimensionality. Furthermore, we find anisotropy of the Lande g-factor, that, combined with band structure calculations, provides us qualitative evidence for direct Rashba SOI and a strong orbital effect of the magnetic field. Finally, a hard superconducting gap is found in the tunneling regime, and the open regime, where we use the Kondo peak as a new tool to gauge the quality of the superconducting gap.
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Submitted 21 July, 2018; v1 submitted 5 June, 2018;
originally announced June 2018.
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$h/e$ superconducting quantum interference through trivial edge states in InAs
Authors:
Folkert K. de Vries,
Tom Timmerman,
Viacheslav P. Ostroukh,
Jasper van Veen,
Arjan J. A. Beukman,
Fanming Qu,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID…
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Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.
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Submitted 18 September, 2017; v1 submitted 12 September, 2017;
originally announced September 2017.
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Ballistic superconductivity in semiconductor nanowires
Authors:
Hao Zhang,
Önder Gül,
Sonia Conesa-Boj,
Michał P. Nowak,
Michael Wimmer,
Kun Zuo,
Vincent Mourik,
Folkert K. de Vries,
Jasper van Veen,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
David J. van Woerkom,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Marina Quintero-Pérez,
Maja C. Cassidy,
Sebastian Koelling,
Srijit Goswami,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brou…
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Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.
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Submitted 10 July, 2017;
originally announced July 2017.
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Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Authors:
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Rafal Skolasinski,
Michael Wimmer,
Fanming Qu,
David T. de Vries,
Binh-Minh Nguyen,
Wei Yi,
Andrey A. Kiselev,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regim…
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Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
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Submitted 11 April, 2017;
originally announced April 2017.
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Hard superconducting gap in InSb nanowires
Authors:
Önder Gül,
Hao Zhang,
Folkert K. de Vries,
Jasper van Veen,
Kun Zuo,
Vincent Mourik,
Sonia Conesa-Boj,
Michał P. Nowak,
David J. van Woerkom,
Marina Quintero-Pérez,
Maja C. Cassidy,
Attila Geresdi,
Sebastian Koelling,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material system…
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Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two dimensional electron gases and topological insulators, and holds relevance for topological superconductivity and quantum computation.
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Submitted 10 April, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
Authors:
Fanming Qu,
Jasper van Veen,
Folkert K. de Vries,
Arjan J. A. Beukman,
Michael Wimmer,
Wei Yi,
Andrey A. Kiselev,
Binh-Minh Nguyen,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum w…
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Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.
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Submitted 18 August, 2016;
originally announced August 2016.
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Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Authors:
Binh-Minh Nguyen,
Andrey A. Kiselev,
Ramsey Noah,
Wei Yi,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Morten Kjaergaard,
Henri J. Suominen,
Fabrizio Nichele,
Charles M. Marcus,
Michael J. Manfra,
Marko Sokolich
Abstract:
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance f…
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A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.
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Submitted 16 May, 2016;
originally announced May 2016.
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Edge Transport in the Trivial Phase of InAs/GaSb
Authors:
Fabrizio Nichele,
Henri J. Suominen,
Morten Kjaergaard,
Charles M. Marcus,
Ebrahim Sajadi,
Joshua A. Folk,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Eric M. Spanton,
Kathryn A. Moler
Abstract:
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb…
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We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.
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Submitted 7 August, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
