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Algebraic and Geometric Characterizations Related to the Quantization Problem of the $C_{2,8}$ Channel
Authors:
Anderson José de Oliveira,
Giuliano Gadioli La Guardia,
Reginaldo Palazzo Jr.,
Clarice Dias de Albuquerque,
Cátia Regina de Oliveira Quilles Queiroz,
Leandro Bezerra de Lima,
Vandenberg Lopes Vieira
Abstract:
In this paper, we consider the steps to be followed in the analysis and interpretation of the quantization problem related to the $C_{2,8}$ channel, where the Fuchsian differential equations, the generators of the Fuchsian groups, and the tessellations associated with the cases $g=2$ and $g=3$, related to the hyperbolic case, are determined. In order to obtain these results, it is necessary to det…
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In this paper, we consider the steps to be followed in the analysis and interpretation of the quantization problem related to the $C_{2,8}$ channel, where the Fuchsian differential equations, the generators of the Fuchsian groups, and the tessellations associated with the cases $g=2$ and $g=3$, related to the hyperbolic case, are determined. In order to obtain these results, it is necessary to determine the genus $g$ of each surface on which this channel may be embedded. After that, the procedure is to determine the algebraic structure (Fuchsian group generators) associated with the fundamental region of each surface. To achieve this goal, an associated linear second-order Fuchsian differential equation whose linearly independent solutions provide the generators of this Fuchsian group is devised. In addition, the tessellations associated with each analyzed case are identified. These structures are identified in four situations, divided into two cases $(g=2$ and $g=3)$, obtaining, therefore, both algebraic and geometric characterizations associated with quantizing the $C_{2,8}$ channel.
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Submitted 20 April, 2023;
originally announced April 2023.
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Intelligent control of a single-link flexible manipulator using sliding modes and artificial neural networks
Authors:
Gabriel da Silva Lima,
Diego Rolim Porto,
Adilson Jose de Oliveira,
Wallace Moreira Bessa
Abstract:
This letter presents a new intelligent control scheme for the accurate trajectory tracking of flexible link manipulators. The proposed approach is mainly based on a sliding mode controller for underactuated systems with an embedded artificial neural network to deal with modeling inaccuracies. The adopted neural network only needs a single input and one hidden layer, which drastically reduces the c…
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This letter presents a new intelligent control scheme for the accurate trajectory tracking of flexible link manipulators. The proposed approach is mainly based on a sliding mode controller for underactuated systems with an embedded artificial neural network to deal with modeling inaccuracies. The adopted neural network only needs a single input and one hidden layer, which drastically reduces the computational complexity of the control law and allows its implementation in low-power microcontrollers. Online learning, rather than supervised offline training, is chosen to allow the weights of the neural network to be adjusted in real time during the tracking. Therefore, the resulting controller is able to cope with the underactuating issues and to adapt itself by learning from experience, which grants the capacity to deal with plant dynamics properly. The boundedness and convergence properties of the tracking error are proved by evoking Barbalat's lemma in a Lyapunov-like stability analysis. Experimental results obtained with a small single-link flexible manipulator show the efficacy of the proposed control scheme, even in the presence of a high level of uncertainty and noisy signals.
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Submitted 21 March, 2022;
originally announced March 2022.
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Direct observation of Jahn-Teller critical dynamics at a charge-order Verwey transition
Authors:
Vinícius Pascotto Gastaldo,
Mala N. Rao,
Alexey Bosak,
Matteo d'Astuto,
Andrea Prodi,
Marine Verseils,
Yannick Klein,
Christophe Bellin,
Luigi Paolasini,
Adilson J. A. de Oliveira,
Edmondo Gilioli,
Samrath Lal Chaplot,
Andrea Gauzzi
Abstract:
By means of diffuse and inelastic x-ray scattering (DS,IXS), we probe directly the charge-ordering (CO) dynamics in the Verwey system (NaMn$_3$)Mn$_4$O$_{12}$, where a peculiar quadruple perovskite structure with no oxygen disorder stabilizes a nearly full Mn$^{3+}$/Mn$^{4+}$ static charge order at $T_{\rm CO}$=175 K concomitant to a commensurate structural modulation with propagation vector…
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By means of diffuse and inelastic x-ray scattering (DS,IXS), we probe directly the charge-ordering (CO) dynamics in the Verwey system (NaMn$_3$)Mn$_4$O$_{12}$, where a peculiar quadruple perovskite structure with no oxygen disorder stabilizes a nearly full Mn$^{3+}$/Mn$^{4+}$ static charge order at $T_{\rm CO}$=175 K concomitant to a commensurate structural modulation with propagation vector ${\bf q}_{\rm CO}=(\frac{1}{2},\frac{1}{2},0)$. At $T_{\rm CO}$, the IXS spectra unveil a softening of a 35.3 meV phonon at ${\bf q}_{\rm CO}$. Lattice dynamical calculations enable us to attribute this soft phonon to a A$_g$ mode whose polarization matches the Jahn-Teller-like distortion pattern of the structural modulation. This result demonstrates that the Jahn-Teller instability is the driving force of the CO Verwey transition in (NaMn$_3$)Mn$_4$O$_{12}$, thus elucidating a long-standing controversy regarding the mechanism of this transition observed in other mixed-valence systems like magnetite.
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Submitted 8 December, 2021;
originally announced December 2021.
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Unconventional magnetic ferroelectricity in the quadruple perovskite NaMn$_7$O$_{12}$
Authors:
Vinícius Pascotto Gastaldo,
Yannick Klein,
Benoît Baptiste,
Riccardo Cabassi,
Edmondo Gilioli,
Andrea Gauzzi,
Adilson J. A. de Oliveira
Abstract:
By means of magnetic, specific heat and pyroelectric measurements, we report on magnetic ferroelectricity in the quadruple perovskite \namno, characterized by a canted antiferromagnetic (AFM) CE structure. Surprisingly, ferroelectricity is concomitant to a dramatic broadening of the magnetic hysteresis loop, well below the AFM ordering temperature. This unconventional behavior shows that the forma…
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By means of magnetic, specific heat and pyroelectric measurements, we report on magnetic ferroelectricity in the quadruple perovskite \namno, characterized by a canted antiferromagnetic (AFM) CE structure. Surprisingly, ferroelectricity is concomitant to a dramatic broadening of the magnetic hysteresis loop, well below the AFM ordering temperature. This unconventional behavior shows that the formation of ferroelectric domains is induced by the symmetric exchange interaction in the local scale, e.g. at magnetic domain boundaries or defects. The value of electric polarization, $P = 0.027 μ$C cm$^{-2}$, measured in polycrystalline samples is comparatively large as compared to other magnetic multiferroics, suggesting that the above scenario is promising indeed for the rational design of practical multiferroic materials.
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Submitted 3 November, 2020; v1 submitted 24 August, 2020;
originally announced August 2020.
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Ferroelectricity in the 1 $μ$C cm$^{-2}$ range induced by canted antiferromagnetism in (LaMn$_{3}$)Mn$_{4}$O$_{12}$
Authors:
A. Gauzzi,
F. Milton,
V. Pascotto Gastaldo,
M. Verseils,
A. Gualdi,
D. Dreifus,
Y. Klein,
D. Garcia,
A. J. A de Oliveira,
P. Bordet,
E. Gilioli
Abstract:
Pyroelectric current and magnetoelectric coupling measurements on polycrystalline samples of the quadruple perovskite (LaMn$_{3}$)Mn$_{4}$O$_{12}$ give evidence of ferroelectricity driven by the antiferromagnetic ordering of the $B$-site Mn$^{3+}$ ions at $T_{N,B}$=78 K with record values of remnant electric polarization up to $P$=0.56 $μ$C cm$^{-2}$. X-ray diffraction measurements indicates an an…
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Pyroelectric current and magnetoelectric coupling measurements on polycrystalline samples of the quadruple perovskite (LaMn$_{3}$)Mn$_{4}$O$_{12}$ give evidence of ferroelectricity driven by the antiferromagnetic ordering of the $B$-site Mn$^{3+}$ ions at $T_{N,B}$=78 K with record values of remnant electric polarization up to $P$=0.56 $μ$C cm$^{-2}$. X-ray diffraction measurements indicates an anomalous behavior of the monoclinic $β$ angle at $T_{N,B}$, which suggests that $P$ lies in the $ac$-plane, where the moments are collinear, so we conclude that exchange striction is the mechanism of spin-driven ferroelectricity. Polarization values $\sim$3 $μ$C cm$^{-2}$ are expected in single crystals, which would open the avenue towards practical multiferroic applications.
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Submitted 17 November, 2018;
originally announced November 2018.
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Immense tunnel magnetoresistance mediated by Coulomb blockade effect and current-driven magnetization reversal in Co clusters embedded in a TiO2 matrix
Authors:
J. Varalda,
D. H. Mosca,
Y. -L. Zheng,
A. J. A. de Oliveira,
M. Marangolo,
W. A. Ortiz,
D. Demaille,
B. Vodungbo,
V. H. Etgens
Abstract:
This article was withdrawn by the authors due to misinterpretation of experimental data.
This article was withdrawn by the authors due to misinterpretation of experimental data.
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Submitted 18 May, 2010; v1 submitted 18 May, 2005;
originally announced May 2005.
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Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures
Authors:
J. Varalda,
A. J. A. de Oliveira,
D. H. Mosca,
J. -M. George,
M. Eddrief,
M. Marangolo,
V. H. Etgens
Abstract:
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localiz…
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We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localized states in the ZnSe barrier and spatial symmetry. The averaging of conduction over all localized states in a junction under resonant condition is strongly detrimental to the magnetoresistance.
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Submitted 17 May, 2005;
originally announced May 2005.
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Magnetic and chemical properties of Cr-based films grown on GaAs(001)
Authors:
D. H. Mosca,
P. C. de Camargo,
J. L. Guimaraes,
W. H. Schreiner,
A. J. A. de Oliveira,
P. E. N. Souza,
M. Eddrief,
V. H. Etgens
Abstract:
We have investigated the magnetic and chemical properties of very thin Cr films, CrAs, and arsenized Cr grown by molecular beam epitaxy on Ga As (001), using x-ray photoemission spectroscopy and SQUID magnetometry. Distintic preparation procedures have been used with the purpose to undestand the origin of the ferromagneti signal observed for this system. It results that Ga segregation and chemic…
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We have investigated the magnetic and chemical properties of very thin Cr films, CrAs, and arsenized Cr grown by molecular beam epitaxy on Ga As (001), using x-ray photoemission spectroscopy and SQUID magnetometry. Distintic preparation procedures have been used with the purpose to undestand the origin of the ferromagneti signal observed for this system. It results that Ga segregation and chemical reactivity between Ga and Cr have negligible contribution in the formation of different thi films. A clear ferromagnetic response even at room temperature suggests the existence of a very thin interfacial layer formed that can eventually be burid during the growth process.
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Submitted 11 March, 2005;
originally announced March 2005.
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Thermal enhancement of the antiferromagnetic exchange coupling between Fe epilayers separated by a crystalline ZnSe spacer
Authors:
J. Varalda,
J. Milano,
A. J. A. de Oliveira,
E. M. Kakuno,
I. Mazzaro,
D. H. Mosca,
L. B. Steren,
M. Eddrief,
M. Marangolo,
D. Demaille,
V. H. Etgens
Abstract:
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discuss…
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We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe spacer layer appears to be the most plausible mechanism to induce the antiferromagnetic coupling.
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Submitted 7 March, 2005;
originally announced March 2005.
