-
Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet
Authors:
** Kwan Johnny Wong,
Wen Zhang,
Fabio Bussolotti,
Xinmao Yin,
Tun Seng Herng,
Lei Zhang,
Yu Li Huang,
Giovanni Vinai,
Sridevi Krishnamurthi,
Danil W Bukhvalov,
Yu Jie Zheng,
Rebekah Chua,
Alpha T N Diaye,
Simon A. Morton,
Chao-Yao Yang,
Kui-Hon Ou Yang,
Piero Torelli,
Wei Chen,
Kuan Eng Johnson Goh,
Jun Ding,
Minn-Tsong Lin,
Geert Brocks,
Michel P de Jong,
Antonio H Castro Neto,
Andrew Thye Shen Wee
Abstract:
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption,…
▽ More
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.
△ Less
Submitted 6 June, 2022;
originally announced June 2022.
-
Evidence for metallic 1T phase, 3d1 electronic configuration and charge density wave order in molecular-beam epitaxy grown monolayer VTe2
Authors:
** Kwan Johnny Wong,
Wen Zhang,
Jun Zhou,
Fabio Bussolotti,
Xinmao Yin,
Lei Zhang,
Alpha T. NDiaye,
Simon A Morton,
Wei Chen,
Kuan Eng Johnson Goh,
Michel P de Jong,
Yuan ** Feng,
Andrew Thye Shen Wee
Abstract:
We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theor…
▽ More
We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theory calculations, we demonstrate direct evidence of the metallic 1T phase and 3d1 electronic configuration in monolayer VTe2 that also features a (4 x 4) charge density wave order at low temperatures. In contrast to previous theoretical predictions, our element-specific characterization by X-ray magnetic circular dichroism rules out a ferromagnetic order intrinsic to the monolayer. Our findings provide essential knowledge necessary for understanding this interesting yet less explored metallic monolayer in the emerging family of van der Waals magnets.
△ Less
Submitted 14 July, 2019;
originally announced July 2019.
-
Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
Authors:
André Dankert,
Parham Pashaei,
M. Venkata Kamalakar,
Anand P. S. Gaur,
Satyaprakash Sahoo,
Ivan Rungger,
Awadhesh Narayan,
Kapildeb Dolui,
Anamul Hoque,
Michel P. de Jong,
Ram S. Katiyar,
Stefano Sanvito,
Saroj P. Dash
Abstract:
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 %…
▽ More
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance.
△ Less
Submitted 26 April, 2018;
originally announced April 2018.
-
Charge transport in nanoscale vertical organic semiconductor pillar devices
Authors:
Janine G. E. Wilbers,
Bojian Xu,
Peter A. Bobbert,
Michel P. de Jong,
Wilfred G. van der Wiel
Abstract:
We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to $10^6$ A/m$^2$). Current-voltage data modelin…
▽ More
We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to $10^6$ A/m$^2$). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.
△ Less
Submitted 13 January, 2017;
originally announced January 2017.
-
Geometric reduction of dynamical nonlocality in nanoscale quantum circuits
Authors:
E. Strambini,
K. S. Makarenko,
G. Abulizi,
M. P. de Jong,
W. G. van der Wiel
Abstract:
Nonlocality is a key feature discriminating quantum and classical physics. Quantum-interference phenomena, such as Young's double slit experiment, are one of the clearest manifestations of nonlocality, recently addressed as $dynamical$ to specify its origin in the quantum equations of motion. It is well known that loss of dynamical nonlocality can occur due to (partial) collapse of the wavefunctio…
▽ More
Nonlocality is a key feature discriminating quantum and classical physics. Quantum-interference phenomena, such as Young's double slit experiment, are one of the clearest manifestations of nonlocality, recently addressed as $dynamical$ to specify its origin in the quantum equations of motion. It is well known that loss of dynamical nonlocality can occur due to (partial) collapse of the wavefunction due to a measurement, such as which-path detection. However, alternative mechanisms affecting dynamical nonlocality have hardly been considered, although of crucial importance in many schemes for quantum information processing. Here, we present a fundamentally different pathway of losing dynamical nonlocality, demonstrating that the detailed geometry of the detection scheme is crucial to preserve nonlocality. By means of a solid-state quantum-interference experiment we quantify this effect in a diffusive system. We show that interference is not only affected by decoherence, but also by a loss of dynamical nonlocality based on a local reduction of the number of quantum conduction channels of the interferometer. With our measurements and theoretical model we demonstrate that this mechanism is an intrinsic property of quantum dynamics. Understanding the geometrical constraints protecting nonlocality is crucial when designing quantum networks for quantum information processing.
△ Less
Submitted 11 December, 2015;
originally announced December 2015.
-
Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices
Authors:
Y. Q. Zhan,
I. Bergenti,
L. Hueso,
V. Dediu,
M. P. de Jong,
Z. S. Li
Abstract:
The electronic structure of the interface between Tris (8-hydroxyquinolino)-aluminum (Alq3) and La0.7Sr0.3MnO3 manganite (LSMO) was investigated by means of photoelectron spectroscopy. As demonstrated recently this interface is characterized by efficient spin injection in organic spintronic devices. We detected a strong interface dipole of about 0.9 eV that shifts down the whole energy diagram o…
▽ More
The electronic structure of the interface between Tris (8-hydroxyquinolino)-aluminum (Alq3) and La0.7Sr0.3MnO3 manganite (LSMO) was investigated by means of photoelectron spectroscopy. As demonstrated recently this interface is characterized by efficient spin injection in organic spintronic devices. We detected a strong interface dipole of about 0.9 eV that shifts down the whole energy diagram of the Alq3 with respect to the vacuum level. This modifies the height of the barriers for the holes injection to 1.7 eV, indicating that hole injection from LSMO into Alq3 is more difficult than it was expected as the energy level matched by vacuum levels. We believe the interface dipole is due to the intrinsic dipole moment characteristic for Alq3 layer. An additional weak interaction is observed between the two materials influencing the N 1s core levels of the organic semiconductor. The presented data are of greatest importance for both qualitative and quantitative description of the organic spin valves.
△ Less
Submitted 14 February, 2007;
originally announced February 2007.
-
Negative Spin Valve effects in manganite/organic based devices
Authors:
A. Riminucci,
I. Bergenti,
L. E. Hueso,
M. Murgia,
C. Taliani,
Y. Zhan,
F. Casoli,
M. P. de Jong,
V. Dediu
Abstract:
We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom electrode and Co as the top electrode. While manganite was directly connected to the organic semiconductor layer, a thin tunnel barrier was placed between the…
▽ More
We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom electrode and Co as the top electrode. While manganite was directly connected to the organic semiconductor layer, a thin tunnel barrier was placed between the OS and the Co electrode. A clear negative spin valve effect - low resistance for antiparallel electrodes configuration - was observed below 210 K in various devices using two different tunnel barriers: LiF and Al2O3. The magnetoresistance effect was found to be strongly asymmetric with respect to the bias voltage. Photoelectron Spectroscopy (PES) investigation of the interface between manganite and Alq3 revealed a strong interface dipole, which leads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 eV) rather than with HOMO level (1.7 eV). This unequivocally indicates that the current in these devices is dominated by the electron channel, and not by holes as previously suggested. The knowledge of the energy diagram at the bottom interface allowed us to work out a semi- quantitative model explaining both negative spin valve effect and strong voltage asymmetry. This model involves a sharp energy selection of the moving charges by the very narrow LUMO level of the organic material leading to peculiar resonant effects.
△ Less
Submitted 24 January, 2007;
originally announced January 2007.
