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Moiré-modulated band gap and van Hove singularities in twisted bilayer germanene
Authors:
Pantelis Bampoulis,
Carolien Castenmiller,
Dennis J. Klaassen,
Jelle v. Mil,
Paul L. de Boeij,
Motohiko Ezawa,
Harold J. W. Zandvliet
Abstract:
Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8$^o$ degrees twist angle, corresponding to a commensurate ($\sqrt{7} \times \sqrt{7}$) structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and elect…
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Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8$^o$ degrees twist angle, corresponding to a commensurate ($\sqrt{7} \times \sqrt{7}$) structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and electronic properties of this configuration, revealing a moiré-modulated band gap and a well-defined edge state. This band gap opens at AB/BA stacked sites and closes at AA stacked sites, a phenomenon attributed to the electric field induced by the scanning tunneling microscopy tip. Our study further revealed two van Hove singularities at -0.8 eV and +1.04 eV, resulting in a Fermi velocity of $(8 \pm 1) \times 10^5$ m/s. Our tight-binding results uncover a unique quantum state, where the topological properties could be regulated through an electric field, potentially triggering two topological phase transitions.
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Submitted 21 March, 2024;
originally announced March 2024.
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Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films
Authors:
L. Mulder,
C. Castenmiller,
F. J. Witmans,
S. Smit,
M. S. Golden,
H. J. W. Zandvliet,
P. L. de Boeij,
A. Brinkman
Abstract:
High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculatio…
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High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.
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Submitted 23 December, 2021; v1 submitted 21 December, 2021;
originally announced December 2021.
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Dual modulation STM: Simultaneous high-resolution map** of the differential conductivity and local tunnel barrier height demonstrated on Au(111)
Authors:
V. J. S. Oldenkotte,
F. J. Witmans,
M. H. Siekman,
P. L. de Boeij,
K. Sotthewes,
C. Castenmiller,
M. D. Ackermann,
J. M. Sturm,
H. J. W. Zandvliet
Abstract:
We present a scanning tunneling microscopy (STM) technique to simultaneously measure the topography, the local tunnel barrier height (dI/dz) and the differential conductivity (dI/dV). We modulate the voltage and tip piezo with small sinusoidal signals that exceed the cut-off frequency of the STM electronics and feed the tunneling current into two lock-in amplifiers (LIAs). We derive and follow a s…
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We present a scanning tunneling microscopy (STM) technique to simultaneously measure the topography, the local tunnel barrier height (dI/dz) and the differential conductivity (dI/dV). We modulate the voltage and tip piezo with small sinusoidal signals that exceed the cut-off frequency of the STM electronics and feed the tunneling current into two lock-in amplifiers (LIAs). We derive and follow a set of criteria for the modulation frequencies to avoid any interference between the LIA measurements. To validate the technique, we measure Friedel oscillations and the subtle tunnel barrier difference between the hcp and fcc stacked regions of the Au(111) herringbone reconstruction. Finally, we show that our method is also applicable to open feedback loop measurements by performing grid I(V) spectroscopy.
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Submitted 30 July, 2021;
originally announced July 2021.
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Spatially resolved electronic structure of twisted graphene
Authors:
Qirong Yao,
Rik van Bremen,
Guus J. Slotman,
Lijie Zhang,
Sebastiaan Haartsen,
Kai Sotthewes,
Pantelis Bampoulis,
Paul L. de Boeij,
Arie van Houselt,
Shengjun Yuan,
Harold J. W. Zandvliet
Abstract:
We have used scanning tunneling microscopy and spectroscopy to resolve the spatial variation of the density of states of twisted graphene layers on top of a highly oriented pyrolytic graphite substrate. Owing to the twist a moire pattern develops with a periodicity that is substantially larger than the periodicity of a single layer graphene. The twisted graphene layer has electronic properties tha…
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We have used scanning tunneling microscopy and spectroscopy to resolve the spatial variation of the density of states of twisted graphene layers on top of a highly oriented pyrolytic graphite substrate. Owing to the twist a moire pattern develops with a periodicity that is substantially larger than the periodicity of a single layer graphene. The twisted graphene layer has electronic properties that are distinctly different from that of a single layer graphene due to the nonzero interlayer coupling. For small twist angles (about 1-3.5 degree) the integrated differential conductivity spectrum exhibits two well-defined Van Hove singularities. Spatial maps of the differential conductivity that are recorded at energies near the Fermi level exhibit a honeycomb structure that is comprised of two inequivalent hexagonal sub-lattices. For energies |E-E_F|>0.3 eV the hexagonal structure in the differential conductivity maps vanishes. We have performed tight-binding calculations of the twisted graphene system using the propagation method, in which a third graphene layer is added to mimic the substrate. This third layer lowers the symmetry and explains the development of the two hexagonal sub-lattices in the moire pattern. Our experimental results are in excellent agreement with the tight-binding calculations.
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Submitted 25 May, 2017;
originally announced May 2017.
