Showing 1–1 of 1 results for author: de Almeida, A J S

Single-charge occupation in ambipolar quantum dots

Authors: A. J. Sousa de Almeida, A. Marquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, F. A. Zwanenburg

Abstract: We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and fe… ▽ More We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 101, 201301 (2020)