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Tunable-Cavity QED with Phase Qubits
Authors:
J. D. Whittaker,
F. C. S. da Silva,
M. S. Allman,
F. Lecocq,
K. Cicak,
A. J. Sirois,
J. D. Teufel,
J. Aumentado,
R. W. Simmonds
Abstract:
We describe a tunable-cavity QED architecture with an rf SQUID phase qubit inductively coupled to a single-mode, resonant cavity with a tunable frequency that allows for both microwave readout of tunneling and dispersive measurements of the qubit. Dispersive measurement is well characterized by a three-level model, strongly dependent on qubit anharmonicity, qubit-cavity coupling and detuning. A tu…
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We describe a tunable-cavity QED architecture with an rf SQUID phase qubit inductively coupled to a single-mode, resonant cavity with a tunable frequency that allows for both microwave readout of tunneling and dispersive measurements of the qubit. Dispersive measurement is well characterized by a three-level model, strongly dependent on qubit anharmonicity, qubit-cavity coupling and detuning. A tunable cavity frequency provides a way to strongly vary both the qubit-cavity detuning and coupling strength, which can reduce Purcell losses, cavity-induced dephasing of the qubit, and residual bus coupling for a system with multiple qubits. With our qubit-cavity system, we show that dynamic control over the cavity frequency enables one to avoid Purcell losses during coherent qubit evolutions and optimize state readout during qubit measurements. The maximum qubit decay time $T_1$ = 1.5 $μ$s is found to be limited by surface dielectric losses from a design geometry similar to planar transmon qubits.
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Submitted 8 August, 2014;
originally announced August 2014.
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A titanium-nitride near-infrared kinetic inductance photon-counting detector and its anomalous electrodynamics
Authors:
J. Gao,
M. R. Visser,
M. O. Sandberg,
F. C. S. da Silva,
S. W. Nam,
D. P. Pappas,
K. D. Irwin,
D. S. Wisbey,
E. Langman,
S. R. Meeker,
B. A. Mazin,
H. G. Leduc,
J. Zmuidzinas
Abstract:
We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductance detectors. Energy resolution of 0.4 eV and arrival-time resolution of 1.2 microseconds are achieved. 0-, 1-, 2-photon events are resolved and shown to follow Poisson statistics. We find that the temperature-dependent frequency shift deviates from the Mattis-Bardeen theory, and the dissipation…
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We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductance detectors. Energy resolution of 0.4 eV and arrival-time resolution of 1.2 microseconds are achieved. 0-, 1-, 2-photon events are resolved and shown to follow Poisson statistics. We find that the temperature-dependent frequency shift deviates from the Mattis-Bardeen theory, and the dissipation response shows a shorter decay time than the frequency response at low temperatures. We suggest that the observed anomalous electrodynamics may be related to quasiparticle traps or subgap states in the disordered TiN films. Finally, the electron density-of-states is derived from the pulse response.
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Submitted 3 August, 2012;
originally announced August 2012.
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Sub-micrometer epitaxial Josephson junctions for quantum circuits
Authors:
Jeffrey S. Kline,
Michael R. Vissers,
Fabio C. S. da Silva,
David S. Wisbey,
Martin Weides,
Terence J. Weir,
Benjamin Turek,
Danielle A. Braje,
William D. Oliver,
Yoni Shalibo,
Nadav Katz,
Blake R. Johnson,
Thomas A. Ohki,
David P. Pappas
Abstract:
We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top e…
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We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.
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Submitted 22 November, 2011; v1 submitted 8 August, 2011;
originally announced August 2011.
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Remote Sensing and Control of Phase Qubits
Authors:
Dale Li,
Fabio C. S. da Silva,
Danielle A. Braje,
Raymond W. Simmonds,
David P. Pappas
Abstract:
We demonstrate a remote sensing design of phase qubits by separating the control and readout circuits from the qubit loop. This design improves measurement reliability because the control readout chip can be fabricated using more robust materials and can be reused to test different qubit chips. Typical qubit measurements such as Rabi oscillations, spectroscopy, and excited-state energy relaxation…
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We demonstrate a remote sensing design of phase qubits by separating the control and readout circuits from the qubit loop. This design improves measurement reliability because the control readout chip can be fabricated using more robust materials and can be reused to test different qubit chips. Typical qubit measurements such as Rabi oscillations, spectroscopy, and excited-state energy relaxation are presented.
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Submitted 5 October, 2010;
originally announced October 2010.
