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Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Authors:
Mao Wang,
Ye Yu,
Slawomir Prucnal,
Yonder Berencén,
Mohd Saif Shaikh,
Lars Rebohle,
Muhammad Bilal Khan,
Vitaly Zviagin,
René Hübner,
Alexej Pashkin,
Artur Erbe,
Yordan M. Georgiev,
Marius Grundmann,
Manfred Helm,
Robert Kirchner,
Shengqiang Zhou
Abstract:
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the sp…
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Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.
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Submitted 7 October, 2022;
originally announced October 2022.
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Light absorption and emission by defects in doped nickel oxide
Authors:
Robert Karsthof,
Ymir Kalmann Frodason,
Augustinas Galeckas,
Philip Michael Weiser,
Vitaly Zviagin,
Marius Grundmann
Abstract:
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high do** concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent oxide semiconductors, even moderate levels of do** of NiO can lead to significant optical absorption in the visible spectral range, limiting the application…
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Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high do** concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent oxide semiconductors, even moderate levels of do** of NiO can lead to significant optical absorption in the visible spectral range, limiting the application range of the material. This correlation has been reported extensively in literature, but its origin has been unknown until now. This work combines experimental data on optical properties from a variety of NiO samples with results from hybrid density functional theory calculations. It shows that strong electron-phonon interaction leads to a significant blue shift (0.6-1 eV) of electronic transitions from the valence band maximum to defect states by light absorption with respect to the thermodynamic charge transition levels. This essentially renders NiO a narrow-gap semiconductor by defect band formation already at moderate do** levels, with strong light absorption for photon energies of approximately 1 eV. The calculations are also shown to be fully consistent with experimental data on defect-related light emission in NiO.
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Submitted 5 May, 2022;
originally announced May 2022.
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Control of Magnetic Order in Spinel ZnFe$_2$O$_4$ Thin Films Through Intrinsic Defect Manipulation
Authors:
Vitaly Zviagin,
Chris Sturm,
Pablo Esquinazi,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The magnetic response is enhanced by annealing the films at 250$^{\circ}$C and diminished at annealing temperatures above 300$^{\circ}$C. The initial increase is a…
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We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The magnetic response is enhanced by annealing the films at 250$^{\circ}$C and diminished at annealing temperatures above 300$^{\circ}$C. The initial increase is attributed to the formation of oxygen vacancies after argon treatment, evident by the increase in the low energy absorption at $\sim$ 0.9 eV involving Fe$^{2+}$ cations. The weakened magnetic response is related to a decline in disorder with a cation redistribution toward a normal spinel configuration. The structural renormalization is consistent with the decrease and increase in oscillator strength of respective electronic transitions involving tetrahedrally (at $\sim$ 3.5 eV) and octahedrally (at $\sim$ 5.7 eV) coordinated Fe$^{3+}$ cations.
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Submitted 30 September, 2019;
originally announced September 2019.
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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Do**
Authors:
Slawomir Prucnal,
Yonder Berencén,
Mao Wang,
Jörg Grenzer,
Matthias Voelskow,
Rene Hübner,
Yuji Yamamoto,
Alexander Scheit,
Florian Bärwolf,
Vitaly Zviagin,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Jerzy Żuk,
Marcin Turek,
Andrzej Droździel,
Krzysztof Pyszniak,
Robert Kudrawiec,
Maciej P. Polak,
Lars Rebohle,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of…
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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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Submitted 7 January, 2019;
originally announced January 2019.
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Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
Authors:
Vitaly Zviagin,
Peter Richter,
Tammo Böntgen,
Michael Lorenz,
Michael Ziese,
Dietrich R. T. Zahn,
Georgeta Salvan,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5…
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Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5 eV, is compared with the magneto-optical response of the dielectric tensor, investigated by magneto-optical Kerr effect (MOKE) spectroscopy in the spectral range from 1.7 eV to 5.5 eV with an applied magnetic field of 1.7 T. Crystal field, inter-valence and inter-sublattice charge transfer transitions, and transitions from O$_{2p}$ to metal cation 3d or 4s bands are identified in both the principal diagonal elements and the magneto-optically active off-diagonal elements of the dielectric tensor. Depending on the degree of cation disorder, resulting in local symmetry distortion, the magneto-optical response is found to be strongest for high crystal quality inverse spinels and for disordered normal spinel structure, contrary to the first principle studies of CoFe$_2$O$_4$ and ZnFe$_2$O$_4$. The results presented provide a basis for deeper understanding of light-matter interaction in this material system that is of vital importance for device-related phenomena and engineering.
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Submitted 1 October, 2015; v1 submitted 29 April, 2015;
originally announced May 2015.
