-
Wafer-scale graphene field-effect transistor biosensor arrays with monolithic CMOS readout
Authors:
Miika Soikkeli,
Anton Murros,
Arto Rantala,
Oihana Txoperena,
Olli-Pekka Kilpi,
Markku Kainlauri,
Kuura Sovanto,
Arantxa Maestre,
Alba Centeno,
Kari Tukkiniemi,
David Gomes Martins,
Amaia Zurutuza,
Sanna Arpiainen,
Mika Prunnila
Abstract:
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from complementary metal-oxide semiconductor (CMOS) integrated sensing solutions, offering miniaturized multiplexed sensing arrays with integrated readout electronics and extre…
▽ More
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from complementary metal-oxide semiconductor (CMOS) integrated sensing solutions, offering miniaturized multiplexed sensing arrays with integrated readout electronics and extremely large sensor counts. The development of CMOS back end of line integration compatible graphene field-effect transistor (GFET) based biosensing has been rapid during the last few years, both in terms of the fabrication scale-up and functionalization towards biorecognition from real sample matrices. The next steps in industrialization relate to improving reliability and require increased statistics. Regarding functionalization towards truly quantitative sensors and on-chip bioassays with improved statistics require sensor arrays with reduced variability in functionalization. Such multiplexed bioassays, whether based on graphene or on other sensitive nanomaterials, are among the most promising technologies for label-free electrical biosensing. As an important step towards that, we report wafer-scale fabrication of CMOS integrated GFET arrays with high yield and uniformity, designed especially for biosensing applications. We demonstrate the operation of the sensing platform array with 512 GFETs in simultaneous detection for sodium chloride concentration series. This platform offers a truly statistical approach on GFET based biosensing and further to quantitative and multi-analyte sensing. The reported techniques can also be applied to other fields relying on functionalized GFETs, such as gas or chemical sensing or infrared imaging.
△ Less
Submitted 15 May, 2023;
originally announced May 2023.
-
Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform
Authors:
Chenghan Wu,
Steven Brems,
Didit Yudistira,
Daire Cott,
Alexey Milenin,
Kevin Vandersmissen,
Arantxa Maestre,
Alba Centeno,
Amaia Zurutuza,
Joris Van Campenhout,
Cedric Huyghebaert,
Dries Van Thourhout,
Marianna Pantouvaki
Abstract:
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish th…
▽ More
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish their wafer-scale integration in a 300mm pilot CMOS foundry environment. A hardmask is used to shape graphene, while tungsten-based contacts are fabricated using the damascene approach to enable CMOS-compatible fabrication. By analyzing data from hundreds of devices per wafer, the impact of specific processing steps on the performance could be identified and optimized. After optimization, modulation depth of 50 $\pm$ 4 dB/mm is demonstrated on 400 devices measured using 6 V peak-to-peak voltage. The electro-optical bandwidth is up to 15.1 $\pm$ 1 1.8 GHz for 25$μ$m-long devices. The results achieved are comparable to lab-based record-setting graphene devices of similar design and CVD graphene quality. By demonstrating the reproducibility of the results across hundreds of devices, this work resolves the bottleneck of graphene wafer-scale integration. Furthermore, CMOS-compatible processing enables co-integration of graphene-based devices with other photonics and electronics building blocks on the same chip, and for high-volume low-cost manufacturing.
△ Less
Submitted 28 March, 2023;
originally announced April 2023.
-
Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
Authors:
Sha Li,
Zhenxing Wang,
Bianca Robertz,
Daniel Neumaier,
Oihana Txoperena,
Arantxa Maestre,
Amaia Zurutuza,
Chris Bower,
Ashley Rushton,
Yinglin Liu,
Chris Harris,
Alexander Bessonov,
Surama Malik,
Mark Allen,
Ivonne Medina-Salazar,
Tapani Ryhänen,
Max C. Lemme
Abstract:
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at…
▽ More
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.
△ Less
Submitted 1 March, 2023;
originally announced March 2023.
-
Graphene Reflectarray Metasurface for Terahertz Beam Steering and Phase Modulation
Authors:
Michele Tamagnone,
Santiago Capdevila,
Antonio Lombardo,
**gbo Wu,
Alba Centeno,
Amaia Zurutuza,
Adrian M. Ionescu,
Andrea C. Ferrari,
Juan R. Mosig
Abstract:
We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, sha** and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find a…
▽ More
We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, sha** and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find applications in other regions of the electromagnetic spectrum, paving the way to versatile optical devices including light radars, adaptive optics, electro-optical modulators and screens.
△ Less
Submitted 11 June, 2018; v1 submitted 5 June, 2018;
originally announced June 2018.
-
Very large scale characterization of graphene mechanical devices using a colorimetry technique
Authors:
Santiago Jose Cartamil-Bueno,
Alba Centeno,
Amaia Zurutuza,
Peter Gerard Steeneken,
Herre Sjoerd Jan van der Zant,
Samer Houri
Abstract:
We use a scalable optical technique to characterize more than 21000 circular nanomechanical devices made out of suspended single- and double-layer graphene on cavities with different diameters ($D$) and depths ($g$). To maximize the contrast between suspended and broken membranes we used a model for selecting the optimal color filter. The method enables parallel and automatized image processing fo…
▽ More
We use a scalable optical technique to characterize more than 21000 circular nanomechanical devices made out of suspended single- and double-layer graphene on cavities with different diameters ($D$) and depths ($g$). To maximize the contrast between suspended and broken membranes we used a model for selecting the optimal color filter. The method enables parallel and automatized image processing for yield statistics. We find the survival probability to be correlated to a structural mechanics scaling parameter given by $D^4/g^3$. Moreover, we extract a median adhesion energy of $Γ=$ 0.9 J/m$^2$ between the membrane and the native SiO$_2$ at the bottom of the cavities.
△ Less
Submitted 3 May, 2018;
originally announced May 2018.
-
Graphene mechanical pixels for Interferometric MOdulator Displays (GIMOD)
Authors:
Santiago J. Cartamil-Bueno,
Dejan Davidovikj,
Alba Centeno,
Amaia Zurutuza,
Herre S. J. van der Zant,
Peter G. Steeneken,
Samer Houri
Abstract:
Graphene, the carbon monolayer and 2D allotrope of graphite, has the potential to impact technology with a wide range of applications such as optical modulators for high-speed communications. In contrast to modulation devices that rely on plasmonic or electronic effects, MEMS-based modulators can have wider tuning ranges albeit at a lower operating frequency. These properties make electro-optic me…
▽ More
Graphene, the carbon monolayer and 2D allotrope of graphite, has the potential to impact technology with a wide range of applications such as optical modulators for high-speed communications. In contrast to modulation devices that rely on plasmonic or electronic effects, MEMS-based modulators can have wider tuning ranges albeit at a lower operating frequency. These properties make electro-optic mechanical modulators ideal for reflective-type display technologies as has been demonstrated previously with SiN membranes in Interferometric MOdulator Displays (IMODs). Despite their low-power consumption and performance in bright environments, IMODs suffer from low frame rates and limited color gamut. Double-layer graphene (DLG) membranes grown by chemical vapor deposition (CVD) can also recreate the interference effect like in IMODs as proven with drumheads displaying Newton's rings. Here, we report on the electro-optical response of CVD DLG mechanical pixels by measuring the change in wavelength-dependent reflectance of a suspended graphene drumhead as a function of electrical gating. We use a spectrometer to measure the wavelength spectrum at different voltages, and find a good agreement with a model based on light interference. Moreover, to verify that gas compression effects do not play an important role, we use a stroboscopic illumination technique to study the electro-optic response of these graphene pixels at frequencies up to 400 Hz. Based on these findings, we demonstrate a continuous full-spectrum reflective-type pixel technology with a Graphene Interferometric MOdulator Display (GIMOD) prototype of 2500 pixels per inch (ppi) equivalent to more than 12K resolution.
△ Less
Submitted 5 March, 2018;
originally announced March 2018.
-
Magnetoplasmonic Enhancement of Faraday Rotation in Patterned Graphene Metasurfaces
Authors:
Michele Tamagnone,
Tetiana M. Slipchenko,
Clara Moldovan,
Peter Q. Liu,
Alba Centeno,
Hamed Hasani,
Amaia Zurutuza,
Adrian M. Ionescu,
Luis Martin-Moreno,
Jérôme Faist,
Juan R. Mosig,
Alexey B. Kuzmenko,
Jean-Marie Poumirol
Abstract:
Faraday rotation is a fundamental property present in all non-reciprocal optical elements. In the THz range, graphene displays strong Faraday rotation; unfortunately, it is limited to frequencies below the cyclotron resonance. Here we show experimentally that in specifically design metasurfaces, magneto-plasmons can be used to circumvent this limitation. We find excellent agreement between theory…
▽ More
Faraday rotation is a fundamental property present in all non-reciprocal optical elements. In the THz range, graphene displays strong Faraday rotation; unfortunately, it is limited to frequencies below the cyclotron resonance. Here we show experimentally that in specifically design metasurfaces, magneto-plasmons can be used to circumvent this limitation. We find excellent agreement between theory and experiment and provide new physical insights and predictions on these phenomena. Finally, we demonstrate strong tuneability in these metasurfaces using electric and magnetic field biasing.
△ Less
Submitted 16 November, 2017;
originally announced November 2017.
-
Non-invasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization
Authors:
Stefan Wagner,
Thomas Dieing,
Alba Centeno,
Amaia Zurutuza,
Anderson D. Smith,
Mikael Östling,
Satender Kataria,
Max C. Lemme
Abstract:
Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale charact…
▽ More
Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale characterization techniques, to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and noninvasive Raman spectroscopy map** to distinguish between freestanding and substrate-supported graphene, utilizing the different strain and do** levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.
△ Less
Submitted 24 February, 2017;
originally announced February 2017.
-
Image sensor array based on graphene-CMOS integration
Authors:
Stijn Goossens,
Gabriele Navickaite,
Carles Monasterio,
Shuchi Gupta,
Juan José Piqueras,
Raúl Pérez,
Gregory Burwell,
Ivan Nikitskiy,
Tania Lasanta,
Teresa Galán,
Eric Puma,
Alba Centeno,
Amaia Pesquera,
Amaia Zurutuza,
Gerasimos Konstantatos,
Frank Koppens
Abstract:
Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine o…
▽ More
Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine other semiconductors than silicon with CMOS. Here, we show for the first time the monolithic integration of a CMOS integrated circuit with graphene, operating as a high mobility phototransistor. We demonstrate a high-resolution image sensor and operate it as a digital camera that is sensitive to UV, visible and infrared light. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.
△ Less
Submitted 24 March, 2017; v1 submitted 12 January, 2017;
originally announced January 2017.
-
Probing Electron Spin Resonance in Monolayer Graphene
Authors:
Timothy J. Lyon,
Jonas Sichau,
August Dorn,
Alba Centeno,
Amaia Pesquera,
Amaia Zurutuza,
Robert H. Blick
Abstract:
The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.
The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.
△ Less
Submitted 26 November, 2016;
originally announced November 2016.
-
Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond
Authors:
Timothy J. Lyon,
Jonas Sichau,
August Dorn,
Amaia Zurutuza,
Amaia Pesquera,
Alba Centeno,
Robert H. Blick
Abstract:
We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observatio…
▽ More
We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.
△ Less
Submitted 16 March, 2017; v1 submitted 18 November, 2016;
originally announced November 2016.
-
Colorimetry technique for scalable characterization of suspended graphene
Authors:
Santiago J. Cartamil-Bueno,
Peter G. Steeneken,
Alba Centeno,
Amaia Zurutuza,
Herre S. J. van der Zant,
Samer Houri
Abstract:
Previous statistical studies on the mechanical properties of chemical-vapor-deposited (CVD) suspended graphene membranes have been performed by means of measuring individual devices or with techniques that affect the material. Here, we present a colorimetry technique as a parallel, non-invasive, and affordable way of characterizing suspended graphene devices. We exploit Newton rings interference p…
▽ More
Previous statistical studies on the mechanical properties of chemical-vapor-deposited (CVD) suspended graphene membranes have been performed by means of measuring individual devices or with techniques that affect the material. Here, we present a colorimetry technique as a parallel, non-invasive, and affordable way of characterizing suspended graphene devices. We exploit Newton rings interference patterns to study the deformation of a double-layer graphene drum 13.2 micrometer in diameter when a pressure step is applied. By studying the time evolution of the deformation, we find that filling the drum cavity with air is 2-5 times slower than when it is purged.
△ Less
Submitted 17 August, 2016;
originally announced August 2016.
-
30 GHz optoelectronic mixing in CVD graphene
Authors:
A. Montanaro,
S. Mzali,
J. -P. Mazellier,
O. Bezencenet,
C. Larat,
S. Molin,
P. Legagneux,
D. Dolfi,
B. Dlubak,
P. Seneor,
M. -B. Martin,
S. Hofmann,
J. Robertson,
A. Centano,
A. Zurutuza
Abstract:
We report an optoelectronic mixer based on chemical vapour-deposited graphene. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially-available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical sign…
▽ More
We report an optoelectronic mixer based on chemical vapour-deposited graphene. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially-available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.
△ Less
Submitted 9 December, 2015; v1 submitted 9 November, 2015;
originally announced November 2015.
-
Anisotropy of Thermal Conductivity of Free-Standing Reduced Graphene Oxide Films Annealed at High Temperature
Authors:
J. D. Renteria,
S. Ramirez,
H. Malekpour,
B. Alonso,
A. Centeno,
A. Zurutuza,
A. I. Cocemasov,
D. L. Nika,
A. A. Balandin
Abstract:
We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal conductivity, K, of the films from 3 W/mK to 61 W/mK at room temperature. The cross-plane thermal conductivity, Kc, revealed an interesting opposite trend of decreas…
▽ More
We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal conductivity, K, of the films from 3 W/mK to 61 W/mK at room temperature. The cross-plane thermal conductivity, Kc, revealed an interesting opposite trend of decreasing to a very small value of 0.09 W/mK in the reduced graphene oxide films annealed at 1000 C. The obtained films demonstrated an exceptionally strong anisotropy of the thermal conductivity, K/Kc ~ 675, which is substantially larger even than in the high-quality graphite. The electrical resistivity of the annealed films reduced to 1 - 19 Ohms/sq. The observed modifications of the in-plane and cross-plane thermal conductivity components resulting in an unusual K/Kc anisotropy were explained theoretically. The theoretical analysis suggests that K can reach as high as ~500 W/mK with the increase in the sp2 domain size and further reduction of the oxygen content. The strongly anisotropic heat conduction properties of these films can be useful for applications in thermal management.
△ Less
Submitted 24 March, 2015;
originally announced March 2015.
-
Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene
Authors:
K. J. Tielrooij,
L. Orona,
A. Ferrier,
M. Badioli,
G. Navickaite,
S. Coop,
S. Nanot,
B. Kalinic,
T. Cesca,
L. Gaudreau,
Q. Ma,
A. Centeno,
A. Pesquera,
A. Zurutuza,
H. de Riedmatten,
P. Goldner,
F. J. García de Abajo,
P. Jarillo-Herrero,
F. H. L. Koppens
Abstract:
Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active contro…
▽ More
Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active control of the energy flow has remained challenging. Here, we demonstrate in-situ electrical control of the relaxation pathways of excited erbium ions, which emit light at the technologically relevant telecommunication wavelength of 1.5 $μ$m. By placing the erbium at a few nanometres distance from graphene, we modify the relaxation rate by more than a factor of three, and control whether the emitter decays into either electron-hole pairs, emitted photons or graphene near-infrared plasmons, confined to $<$15 nm to the sheet. These capabilities to dictate optical energy transfer processes through electrical control of the local density of optical states constitute a new paradigm for active (quantum) photonics.
△ Less
Submitted 3 October, 2014;
originally announced October 2014.
-
Knock-on damage in bilayer graphene: indications for a catalytic pathway
Authors:
Jon Zubeltzu,
Andrey Chuvilin,
Fabiano Corsetti,
Amaia Zurutuza,
Emilio Artacho
Abstract:
We study by high-resolution transmission electron microscopy the structural response of bilayer graphene to electron irradiation with energies below the knock-on damage threshold of graphene. We observe that one type of divacancy, which we refer to as the butterfly defect, is formed for radiation energies and doses for which no vacancies are formed in clean monolayer graphene. By using first princ…
▽ More
We study by high-resolution transmission electron microscopy the structural response of bilayer graphene to electron irradiation with energies below the knock-on damage threshold of graphene. We observe that one type of divacancy, which we refer to as the butterfly defect, is formed for radiation energies and doses for which no vacancies are formed in clean monolayer graphene. By using first principles calculations based on density-functional theory, we analyze two possible causes related with the presence of a second layer that could explain the observed phenomenon: an increase of the defect stability or a catalytic effect during its creation. For the former, the obtained formation energies of the defect in monolayer and bilayer systems show that the change in stability is negligible. For the latter, ab initio molecular dynamics simulations indicate that the threshold energy for direct expulsion does not decrease in bilayer graphene as compared with monolayer graphene, and we demonstrate the possibility of creating divacancies through catalyzed intermediate states below this threshold energy. The estimated cross section agrees with what is observed experimentally. Therefore, we show the possibility of a catalytic pathway for creating vacancies under electron radiation below the expulsion threshold energy.
△ Less
Submitted 4 December, 2013; v1 submitted 26 September, 2013;
originally announced September 2013.
-
Optical nano-imaging of gate-tuneable graphene plasmons
Authors:
Jianing Chen,
Michela Badioli,
Pablo Alonso-González,
Suko Thongrattanasiri,
Florian Huth,
Johann Osmond,
Marko Spasenovic,
Alba Centeno,
Amaia Pesquera,
Philippe Godignon,
Amaia Zurutuza,
Nicolas Camara,
Javier Garcia de Abajo,
Rainer Hillenbrand,
Frank Koppens
Abstract:
The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, as photons do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons - coup…
▽ More
The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, as photons do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons - coupled excitations of photons and charge carriers - in graphene. In this two-dimensional sheet of carbon atoms, it is expected that plasmon polaritons and their associated optical fields can be readily tuned electrically by varying the graphene carrier density. While optical graphene plasmon resonances have recently been investigated spectroscopically, no experiments so far have directly resolved propagating plasmons in real space. Here, we launch and detect propagating optical plasmons in tapered graphene nanostructures using near-field scattering microscopy with infrared excitation light. We provide real-space images of plasmonic field profiles and find that the extracted plasmon wavelength is remarkably short - over 40 times smaller than the wavelength of illumination. We exploit this strong optical field confinement to turn a graphene nanostructure into a tunable resonant plasmonic cavity with extremely small mode volume. The cavity resonance is controlled in-situ by gating the graphene, and in particular, complete switching on and off of the plasmon modes is demonstrated, thus paving the way towards graphene-based optical transistors. This successful alliance between nanoelectronics and nano-optics enables the development of unprecedented active subwavelength-scale optics and a plethora of novel nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing and strongly enhanced light-matter interactions for quantum devices and (bio)sensors.
△ Less
Submitted 26 February, 2012; v1 submitted 22 February, 2012;
originally announced February 2012.
