Showing 1–21 of 21 results for author: Zuniga-Perez, J

Soliton formation in an exciton-polariton condensate at a bound state in the continuum

Authors: I. Septembre, I. Foudjo, V. Develay, T. Guillet, S. Bouchoule, J. Zúñiga-Pérez, D. D. Solnyshkov, G. Malpuech

Abstract: Bound states in the continuum (BIC) are of special interest in photonics due to their theoretically infinite radiative lifetime. Here, we design a structure composed of a GaN layer with guided exciton-polaritons and a TiO$_2$ 1D photonic crystal slab. The photonic BIC hosted by the photonic crystal slab couples with the excitons of GaN to form a polaritonic BIC with a negative mass. This allows co… ▽ More Bound states in the continuum (BIC) are of special interest in photonics due to their theoretically infinite radiative lifetime. Here, we design a structure composed of a GaN layer with guided exciton-polaritons and a TiO$_2$ 1D photonic crystal slab. The photonic BIC hosted by the photonic crystal slab couples with the excitons of GaN to form a polaritonic BIC with a negative mass. This allows condensation to be reached with a low threshold in a structure suitable for electrical injection, paving the way for room-temperature polariton microdevices. We study in detail how the repulsive interaction between exciton-polaritons affects the condensate distribution in reciprocal space and, consequently, the condensate's overlap with the BIC resonance and, therefore, the condensate lifetime. We study an intrinsic contribution related to the formation of a bright soliton and the extrinsic contribution related to the interaction with an excitonic reservoir induced by spatially focused non-resonant pum**. We then study the peculiar dynamics of the condensation process in a BIC state for interacting particles using Boltzmann equations and hybrid Boltzmann-Gross Pitaevskii equations. We find optimal conditions allowing one to benefit from the long lifetime of the BIC for polariton condensation in a real structure. △ Less

Submitted 5 April, 2024; v1 submitted 12 January, 2024; originally announced January 2024.

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

Authors: Loïc Méchin, François Médard, Joël Leymarie, Sophie Bouchoule, Jean-Yves Duboz, Blandine Alloing, Jesús Zuñiga-Pérez, Pierre Disseix

Abstract: The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional ho… ▽ More The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schrödinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas. △ Less

Submitted 20 December, 2023; originally announced December 2023.

Mode-locked GaN waveguide polariton laser

Authors: H. Souissi, M. Gromovyi, I. Septembre, V. Develay, C. Brimont, L. Doyennette, E. Cambril, S. Bouchoule, B. Alloing, E. Frayssinet, J. Zúñiga-Pérez, T. Ackemann, G. Malpuech, D. D Solnyshkov, T. Guillet

Abstract: We introduce a novel mode-locking scheme based on polariton-polariton interactions and we demonstrate its operation in a $60 \ μm-$long GaN-based waveguide cavity. The exciton-polariton active layer acts both as a gain medium and as a self-focusing medium with a large Kerr-like nonlinearity. The monitoring of the cavity free spectral range across the lasing threshold evidences the linearization of… ▽ More We introduce a novel mode-locking scheme based on polariton-polariton interactions and we demonstrate its operation in a $60 \ μm-$long GaN-based waveguide cavity. The exciton-polariton active layer acts both as a gain medium and as a self-focusing medium with a large Kerr-like nonlinearity. The monitoring of the cavity free spectral range across the lasing threshold evidences the linearization of the strongly nonlinear mode dispersion due to self-phase modulation. The Gross-Pitaevskii equation for the coupled exciton and photon fields taking into account the exact cavity geometry, predicts the appearance of optical pulses within the cavity that correspond to optical solitons. Pulses widths are about 100 fs, both in theory and experiment. △ Less

Submitted 2 November, 2023; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 13 pages, 10 figures

Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening

Authors: Geoffrey Kreyder, Léa Hermet, Pierre Disseix, François Médard, Martine Mihailovic, François Réveret, Sophie Bouchoule, Christiane Deparis, Jesús Zuñiga-Pérez, Joël Leymarie

Abstract: The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a m… ▽ More The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the bandgap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carriers lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming it is lower than the corresponding Mott density for zinc oxide reported in the literature. △ Less

Submitted 20 March, 2023; v1 submitted 15 December, 2022; originally announced December 2022.

Crossing of the branch cut: the topological origin of a universal 2π-phase retardation in non-Hermitian metasurfaces

Authors: Rémi Colom, Elena Mikheeva, Karim Achouri, Jesus Zuniga-Perez, Nicolas Bonod, Olivier J. F. Martin, Sven Burger, Patrice Genevet

Abstract: Full wavefront control by photonic components requires that the spatial phase modulation on an incoming optical beam ranges from 0 to 2π. Because of their radiative coupling to the environment, all optical components are intrinsically non-Hermitian systems, often described by reflection and transmission matrices with complex eigenfrequencies. Here, we show that Parity-Time symmetry breaking -- eit… ▽ More Full wavefront control by photonic components requires that the spatial phase modulation on an incoming optical beam ranges from 0 to 2π. Because of their radiative coupling to the environment, all optical components are intrinsically non-Hermitian systems, often described by reflection and transmission matrices with complex eigenfrequencies. Here, we show that Parity-Time symmetry breaking -- either explicit or spontaneous -- moves the position of Zero singularities of the reflection or transmission matrices from the real axis to the upper part of the complex frequency plane. A universal 0 to 2π-phase gradient of an output channel as a function of the real frequency excitation is thus realized whenever the discontinuity branch bridging a Zero and a Pole, i.e a pair of singularities, is crossing the real axis. This basic understanding is applied to engineer electromagnetic fields at interfaces, including, but not limited to, metasurfaces. Non-Hermitian topological features associated with exceptional degeneracies or branch cut crossing are shown to play a surprisingly pivotal role in the design of resonant photonic systems. △ Less

Submitted 11 February, 2022; originally announced February 2022.

Journal ref: Laser Photon. Rev. 17, 2200976 (2023)

Ridge polariton laser: different from a semiconductor edge-emitting laser

Authors: H Souissi, M Gromovyi, T Gueye, C Brimont, L Doyennette, D Solnyshkov, G Malpuech, E Cambril, S Bouchoule, B Alloing, S Rennesson, F Semond, J Zúñiga-Pérez, T Guillet

Abstract: We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $μ$m long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pum** and assess quantitatively the effect of a varying optic… ▽ More We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $μ$m long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pum** and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversion-less polaritonic gain about 10 times larger than in equivalent GaN lasers. The modelling of the cavity free spectral range demonstrates the polaritonic nature of the modes. △ Less

Submitted 7 October, 2022; v1 submitted 12 January, 2022; originally announced January 2022.

Journal ref: Physical Review Applied 18, 044029 (2022)

Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength

Authors: C. Brimont, L. Doyennette, G. Kreyder, F. Réveret, P. Disseix, F. Médard, J. Leymarie, E. Cambril, S. Bouchoule, M. Gromovyi, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, T. Guillet

Abstract: We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons a… ▽ More We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility. △ Less

Submitted 4 November, 2020; v1 submitted 12 February, 2020; originally announced February 2020.

Comments: 145 pages, 8 figures

Journal ref: Phys. Rev. Applied 14, 054060 (2020)

Nickel oxide-based heterostructures with large band offsets

Authors: Robert Karsthof, Holger von Wenckstern, Jesus Zuniga-Perez, Christiane Deparis, Marius Grundmann

Abstract: We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence b… ▽ More We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so called type-II band alignment, making electron-hole recombination the only process by which a current can vertically flow through the structure. These heterojunctions are nevertheless shown to be of practical use in efficient optoelectronic devices, as exemplified here by our UV-converting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated recombination channels connected to the type-II interface, one of which we identify and analyse in more detail here. Furthermore, CdO/NiO contacts were studied - a heterostructure with even larger band offsets such that a type-III band alignment is achieved. This situation theoretically enables the development of a 2-dimensional electronic system consisting of topologically protected states. We present experiments demonstrating that the CdO/NiO heterostructure indeed hosts a conductive layer absent in both materials when studied separately. △ Less

Submitted 29 October, 2019; originally announced October 2019.

Competition between horizontal and vertical polariton lasing in planar microcavities

Authors: O. Jamadi, F. Reveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zuniga-Perez, G. Malpuech

Abstract: Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by total internal reflection and which is not radiatively coupled to the vacuum modes except through defects or sample edges. We show that polariton lasing m… ▽ More Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by total internal reflection and which is not radiatively coupled to the vacuum modes except through defects or sample edges. We show that polariton lasing mediated by polariton stimulated scattering can occur concomitantly in both types of modes in a microcavity. By adjusting the detuning between the exciton and the radiative photon mode one can favor polariton lasing either in the radiative or in the guided modes. Our results suggest that the competition between these two types of polariton lasing modes may have played a role in many previous observations of polariton lasing and polariton Bose Einstein condensation. △ Less

Submitted 16 January, 2019; v1 submitted 12 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 085304 (2019)

Edge-emitting polariton laser and amplifier based on a ZnO waveguide

Authors: O. Jamadi, F. Reveret, P. Disseix, F. Medard, J. Leymarie, A. Moreau, D. Solnyshkov, C. Deparis, M. Leroux, E. Cambril, S. Bouchoule, J. Zuniga-Perez, G. Malpuech

Abstract: We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of ra… ▽ More We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of radiative polarions in planar ZnO microcavities. These results open broad perspectives for guided polaritonics by allowing an easier and more straightforward implementation of polariton integrated circuits exploiting fast propagating polaritons. △ Less

Submitted 26 January, 2018; v1 submitted 1 August, 2017; originally announced August 2017.

Journal ref: Light-Science & Applications 7, 82 (2018)

Polariton condensation phase diagram in wide bandgap planar microcavities: GaN versus ZnO

Authors: O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, S. Bouchoule, X. Lafosse, F. Li, M. Leroux, F. Semond, J. Zuniga-Perez

Abstract: GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental c… ▽ More GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental condition. Experimental results are well reproduced by simulation using Boltzmann equations. Lower polariton lasing threshold has been measured at low temperature in the ZnO microcavity as expected due to a larger Rabi splitting. However the threshold is strongly impacted by LO phonons through phonon-assisted polariton relaxation. We observe and discuss this effect as a function of temperature and detuning. Finally the polariton lasing threshold at room temperature is quite similar in both microcavities. This study highlights polariton relaxation mechanism and their importance for threshold optimization. △ Less

Submitted 18 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. B 93, 115205 (2016)

Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity

Authors: Rereao Hahe, Christelle Brimont, Pierre Valvin, Thierry Guillet, Feng Li, Mathieu Leroux, Jesus Zuniga-Perez, Xavier Lafosse, Gilles Patriarche, Sophie Bouchoule

Abstract: The formation and propagation of a polariton condensate under tightly focused excitation is investigated in a ZnO microcavity both experimentally and theoretically. 2D near-field and far-field images of the condensate are measured under quasi-continuous non-resonant excitation. The corresponding spatial profiles are compared to a model based on the Gross-Pitaevskii equation under cylindrical geome… ▽ More The formation and propagation of a polariton condensate under tightly focused excitation is investigated in a ZnO microcavity both experimentally and theoretically. 2D near-field and far-field images of the condensate are measured under quasi-continuous non-resonant excitation. The corresponding spatial profiles are compared to a model based on the Gross-Pitaevskii equation under cylindrical geometry. This work allows to connect the experiments performed with a small excitation laser spot and the previous kinetic models of condensation in a 2D infinite microcavity, and to determine the relevant parameters of both the interaction and the relaxation between the reservoir and the condensate. Two main parameters are identified: the exciton-photon detuning through the polariton effective mass and the temperature, which determines the efficiency of the relaxation from the reservoir to the condensate. △ Less

Submitted 5 January, 2016; v1 submitted 22 October, 2015; originally announced October 2015.

Comments: 13 pages, 3 tables and 9 figures

Journal ref: Phys. Rev. B 92, 235308 (2015)

Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers

Authors: J. Zuniga-Perez, E. Mallet, R. Hahe, M. J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J. Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, Feng Li, F. Réveret, F. Semond

Abstract: A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogenei… ▽ More A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices. △ Less

Submitted 30 April, 2014; originally announced April 2014.

Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates

Authors: M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur, M. Cooke, M. Dineen, A. Di Carlo, D. W. E. Allsopp, J. Zúñiga-Pérez

Abstract: Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strain… ▽ More Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained. △ Less

Submitted 30 May, 2013; originally announced May 2013.

ZnO-Based Polariton Laser Operating at Room Temperature: From Excitonic to Photonic Condensate

Authors: Feng Li, Laurent Orosz, Olfa Kamoun, Sophie Bouchoule, Christelle Brimont, Pierre Disseix, Thierry Guillet, Xavier Lafosse, Mathieu Leroux, Joel Leymarie, Meletis Mexis, Martine Mihailovic, François Réveret, Dmitry Solnyshkov, Jesus Zuniga-Perez, Guillaume Malpuech

Abstract: A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the… ▽ More A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the best choice for a blue/UV-emitting polariton laser device. We report on the fabrication of a new family of fully hybrid microcavities that combine the best-quality ZnO material available (bulk substrate) and two dielectric distributed Bragg reflectors, demonstrating large quality factors (>2500) and Rabi splittings (~200 meV). Low threshold polariton lasing is achieved between 4 and 300 K and for excitonic fractions ranging between 12% and 96 %. A phase diagram highlighting the role of LO phonon-assisted relaxation in this polar semiconductor is established, and a remarkable switching between polariton modes is demonstrated. △ Less

Submitted 31 July, 2012; originally announced July 2012.

LO-phonon assisted polariton lasing in a ZnO based microcavity

Authors: L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zuniga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont, T. Guillet

Abstract: Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in… ▽ More Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations. △ Less

Submitted 30 November, 2011; originally announced December 2011.

Journal ref: PRB 85, 121201(R) (2012)

From Strong to Weak Coupling Regime in a Single GaN Microwire up to Room Temperature

Authors: A. Trichet, F. Médard, J. Zuniga-Perez, B. Alloing, M. Richard

Abstract: Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanos… ▽ More Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanostructure. The demonstration relies on a method which doesn't require any knowledge á priori on the photonic eigenmodes energy in the microwire, i.e. the details of the microwire cross-section shape. Moreover, using a heavily doped segment within the same microwire, we confirm experimentally that free excitons provide the oscillator strength for this strong coupling regime. The measured Rabi splitting to linewidth ratio of 15 matches state of the art planar Nitride-based microcavities, in spite of a much simpler design and a less demanding fabrication process. These results show that GaN microwires constitute a simpler and promising system to achieve electrically pumped lasing in the strong coupling regime. △ Less

Submitted 8 March, 2012; v1 submitted 28 June, 2011; originally announced June 2011.

Comments: 14 pages, 4 figures

Laser emission with excitonic gain in a ZnO planar microcavity

Authors: Thierry Guillet, Christelle Brimont, Pierre Valvin, Bernard Gil, Thierry Bretagnon, F. Medard, Martine Mihailovic, Jesús Zúñiga-Pérez, Mathieu Leroux, F. Semond, Sophie Bouchoule

Abstract: The lasing operation of a ZnO planar microcavity under optical pum** is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical… ▽ More The lasing operation of a ZnO planar microcavity under optical pum** is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process. △ Less

Submitted 1 June, 2011; originally announced June 2011.

Journal ref: Applied Physics Letters 98, 211105 (2011) 3

Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime

Authors: L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont, T. Guillet

Abstract: In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demon… ▽ More In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demonstrated through macro-, and micro-photoluminescence (μ-PL) and reflectivity experiments. A quality factor of 675 and a maximum PL emission at k=0 are evidenced thanks to μ-PL, revealing an efficient polaritonic relaxation even at low excitation power. △ Less

Submitted 13 June, 2011; v1 submitted 4 May, 2011; originally announced May 2011.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Express 4 (2011) 072001

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

Authors: Stéphane Faure, Christelle Brimont, Thierry Guillet, T. Bretagnon, B. Gil, François Médard, D. Lagarde, Pierre Disseix, Joel Leymarie, Jesús Zúñiga-Pérez, Mathieu Leroux, Eric Frayssinet, Jean-Christophe Moreno, Fabrice Semond, Sophie Bouchoule

Abstract: The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode po… ▽ More The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode polariton branch. It is partly broken under strong excitation density, so that the emission from this branch dominates the one from cavity-mode polaritons. △ Less

Submitted 25 September, 2009; v1 submitted 27 May, 2009; originally announced May 2009.

Journal ref: Applied Physics Letters 95, 12 (2009) 121102

Experimental observation of strong light-matter coupling in ZnO microcavities: influence of large excitonic absorption

Authors: François Médard, Jesús Zúñiga-Pérez, Pierre Disseix, Martine Mihailovic, Joel Leymarie, A. Vasson, Fabrice Semond, Eric Frayssinet, Jean-Christophe Moreno, Mathieu Leroux, Stéphane Faure, Thierry Guillet

Abstract: We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle resolved reflectivity measurements, corroborated by transfer-matrix simulations, show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities. The impact of the large excitonic absorption, which enables a ZnO bulk-like behavior to be obse… ▽ More We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle resolved reflectivity measurements, corroborated by transfer-matrix simulations, show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities. The impact of the large excitonic absorption, which enables a ZnO bulk-like behavior to be observed even in the strong coupling regime, is illustrated both experimentally and theoretically by considering cavities with increasing thickness. △ Less

Submitted 17 December, 2008; originally announced December 2008.