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Giant voltage amplification from incipient ferroelectric states
Authors:
Mónica Graf,
Hugo Aramberri,
Pavlo Zubko,
Jorge Íñiguez
Abstract:
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response. When the ferroelectric is in a heterostructure, this behavior yields a voltage amplification in the other elements, which experience a potential difference larger than the one applied, holding promise for low-power electronics. So far research has focused on verifying this effect and lit…
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Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response. When the ferroelectric is in a heterostructure, this behavior yields a voltage amplification in the other elements, which experience a potential difference larger than the one applied, holding promise for low-power electronics. So far research has focused on verifying this effect and little is known about how to optimize it. Here we describe an electrostatic theory of ferroelectric/dielectric superlattices, convenient model systems, and show the relationship between the negative permittivity of the ferroelectric layers and the voltage amplification in the dielectric ones. Then, we run simulations of PbTiO3/SrTiO3 superlattices to reveal the factors most strongly affecting the amplification. In particular, we find that giant effects (up to 10-fold increases) can be obtained when PbTiO3 is brought close to the so-called "incipient ferroelectric" state.
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Submitted 18 January, 2022;
originally announced January 2022.
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Domain Wall Orientations in Ferroelectric Superlattices Probed with Synchrotron X-Ray Diffraction
Authors:
Marios Hadjimichael,
Edoardo Zatterin,
Stéphanie Fernandez-Peña,
Steven J. Leake,
Pavlo Zubko
Abstract:
Ferroelectric domains in PbTiO$_3$/SrTiO$_3$ superlattices were studied using synchrotron X-ray diffraction. Macroscopic measurements revealed a change in the domain wall orientation from $\left\lbrace 100 \right\rbrace $ to $\left\lbrace 110 \right\rbrace $ crystallographic planes with increasing temperature. The temperature range of this reorientation depends on the ferroelectric layer thickness…
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Ferroelectric domains in PbTiO$_3$/SrTiO$_3$ superlattices were studied using synchrotron X-ray diffraction. Macroscopic measurements revealed a change in the domain wall orientation from $\left\lbrace 100 \right\rbrace $ to $\left\lbrace 110 \right\rbrace $ crystallographic planes with increasing temperature. The temperature range of this reorientation depends on the ferroelectric layer thickness and domain period. Using a nanofocused beam, local changes in domain wall orientation within the buried ferroelectric layers were imaged, both in structurally uniform regions of the sample and near defect sites and argon ion etched patterns. Domain walls were found to exhibit preferential alignment with the straight edges of the etched patterns as well as with structural features associated with defect sites. The distribution of out-of-plane lattice parameters was mapped around one such feature, showing that it is accompanied by inhomogeneous strain and large strain gradients.
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Submitted 5 January, 2018;
originally announced January 2018.
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Charge do** and large lattice expansion in oxygen-deficient heteroepitaxial WO3
Authors:
Giordano Mattoni,
Alessio Filippetti,
Nicola Manca,
Pavlo Zubko,
Andrea D. Caviglia
Abstract:
Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin…
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Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin films is challenging because the deposition conditions are very sensitive to the formation of oxygen vacancies. In this work, we show how background oxygen pressure during pulsed laser deposition can be used to tune the structural and electronic properties of WO3 thin films. By performing X-ray diffraction and low-temperature transport measurements, we find changes in WO3 lattice volume up to 10%, concomitantly with an insulator-to-metal transition as a function of increased level of electron do**. We use advanced ab initio calculations to describe in detail the properties of the oxygen vacancy defect states, and their evolution in terms of excess charge concentration. Our results depict an intriguing scenario where structural, electronic, optical, and transport properties of WO3 single-crystal thin films can all be purposely tuned by a suited control of oxygen vacancies formation during growth.
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Submitted 14 November, 2017;
originally announced November 2017.
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On the persistence of polar domains in ultrathin ferroelectric capacitors
Authors:
Pavlo Zubko,
Haidong Lu,
Chung-Wung Bark,
Xavi Martí,
José Santiso,
Chang-Beom Eom,
Gustau Catalan,
Alexei Gruverman
Abstract:
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroel…
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The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroelectric heterostructures: epitaxial single-crystalline BaTiO$_3$ films sandwiched between the most habitual perovskite electrodes, SrRuO$_3$, on top of the most used perovskite substrate, SrTiO$_3$. We use a combination of piezoresponse force microscopy, dielectric measurements and structural characterization to provide conclusive evidence for the ferroelectric nature of the relaxed polarization state in ultrathin BaTiO$_3$ capacitors. We show that even the high screening efficiency of SrRuO$_3$ electrodes is still insufficient to stabilize polarization in SrRuO$_3$/BaTiO$_3$/SrRuO$_3$ heterostructures at room temperature. We identify the key role of domain wall motion in determining the macroscopic electrical properties of ultrathin capacitors and discuss their dielectric response in the light of the recent interest in negative capacitance behaviour.
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Submitted 16 June, 2017; v1 submitted 16 May, 2017;
originally announced May 2017.
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Ground state oxygen holes and the metal-insulator transition in the negative charge transfer rare-earth nickelates
Authors:
Valentina Bisogni,
Sara Catalano,
Robert J. Green,
Marta Gibert,
Raoul Scherwitzl,
Yaobo Huang,
Vladimir N. Strocov,
Pavlo Zubko,
Shadi Balandeh,
Jean-Marc Triscone,
George Sawatzky,
Thorsten Schmitt
Abstract:
The metal-insulator transitions and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here, taking a NdNiO3 thin film as a representative example, we utilize a combination of x-ray absorption and resonant inelastic x-ray scattering (RIXS) spectroscop…
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The metal-insulator transitions and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here, taking a NdNiO3 thin film as a representative example, we utilize a combination of x-ray absorption and resonant inelastic x-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of the rare-earth nickelates. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for the abundance of oxygen 2p holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that these distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy, in line with recent models interpreting the metal to insulator transition in terms of bond disproportionation.
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Submitted 22 July, 2016;
originally announced July 2016.
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Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates
Authors:
Giordano Mattoni,
Pavlo Zubko,
Francesco Maccherozzi,
Alexander J. H. van der Torren,
Daan B. Boltje,
Marios Hadjimichael,
Nicola Manca,
Sara Catalano,
Marta Gibert,
Yanwei Liu,
Jan Aarts,
Jean-Marc Triscone,
Sarnjeet S. Dhesi,
Andrea D. Caviglia
Abstract:
Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscal…
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Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is an intrinsic local property, set by surface morphology and stable across multiple temperature cycles. Our data provides new insights into the MIT of heteroepitaxial nickelates and points to a rich, nanoscale phenomenology in this strongly correlated material.
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Submitted 16 November, 2016; v1 submitted 14 February, 2016;
originally announced February 2016.
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Tuning of the depolarization field and nanodomain structure in ferroelectric thin films
Authors:
Céline Lichtensteiger,
Stéphanie Fernandez-Pena,
Christian Weymann,
Pavlo Zubko,
Jean-Marc Triscone
Abstract:
The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization fields that reduce the spontaneous polarization or drive the formation of ferroelectric domains. We demonstrate that by modifying the screening at the metal-fer…
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The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization fields that reduce the spontaneous polarization or drive the formation of ferroelectric domains. We demonstrate that by modifying the screening at the metal-ferroelectric interface through insertion of ultrathin dielectric spacers, the strength of the depolarization field can be tuned and thus used to control the formation of nanoscale domains. Using piezoresponse force microscopy, we follow the evolution of the domain configurations as well as polarization stability as a function of depolarization field strength.
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Submitted 30 July, 2015;
originally announced July 2015.
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Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces
Authors:
S. Catalano,
M. Gibert,
V. Bisogni,
F. He,
R. Sutarto,
M. Viret,
P. Zubko,
R. Scherwitzl,
G. A. Sawatzky,
T. Schmitt,
J. -M. Triscone
Abstract:
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries a…
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Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
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Submitted 4 May, 2015;
originally announced May 2015.
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Spatially resolved ultrafast magnetic dynamics launched at a complex-oxide hetero-interface
Authors:
M. Först,
A. D. Caviglia,
R. Scherwitzl,
R. Mankowsky,
P. Zubko,
V. Khanna,
H. Bromberger,
S. B. Wilkins,
Y. -D. Chuang,
W. S. Lee,
W. F. Schlotter,
J. J. Turner,
G. L. Dakovski,
M. P. Minitti,
J. Robinson,
S. R. Clark,
D. Jaksch,
J. -M. Triscone,
J. P. Hill,
S. S. Dhesi,
A. Cavalleri
Abstract:
Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting…
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Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting in a NdNiO3 film across a hetero-interface. Femtosecond Resonant Soft X-ray Diffraction is used to determine the spatial and temporal evolution of the magnetic disordering. We observe a magnetic melt front that grows from the substrate interface into the film, at a speed that suggests electronically driven propagation. Light control and ultrafast phase front propagation at hetero-interfaces may lead to new opportunities in optomagnetism, for example by driving domain wall motion to transport information across suitably designed devices.
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Submitted 4 May, 2015;
originally announced May 2015.
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Electronic Transitions in Strained SmNiO_3 Thin Films
Authors:
S. Catalano,
M. Gibert,
V. Bisogni,
O. Peil,
F. He,
R. Sutarto,
M. Viret,
P. Zubko,
R. Scherwitzl,
A. Georges,
G. A. Sawatzky,
T. Schmitt,
J. -M. Triscone
Abstract:
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Néel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Néel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Néel=T_MI is a…
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Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Néel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Néel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Néel=T_MI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO_3 lattice leads to the stabilization of a single metallic paramagnetic phase.
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Submitted 20 April, 2015;
originally announced April 2015.
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Unusual temperature dependence of the spectral weight near the Fermi level of NdNiO3 thin films
Authors:
E. F. Schwier,
R. Scherwitzl,
Z. Vydrova,
M.,
Garcia-Fernandez,
M. Gibert,
P. Zubko,
M. G. Garnier,
J. -M. Triscone,
P. Aebi
Abstract:
We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes…
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We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes of spectral loss close to the Fermi level. The temperature evolution of one regime is found to be independent from the MIT.
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Submitted 20 November, 2012;
originally announced November 2012.
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Ferroelectricity in ultrathin film capacitors
Authors:
Céline Lichtensteiger,
Pavlo Zubko,
Massimiliano Stengel,
Pablo Aguado-Puente,
Jean-Marc Triscone,
Philippe Ghosez,
Javier Junquera
Abstract:
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices.
As…
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Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices.
As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.
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Submitted 27 August, 2012;
originally announced August 2012.
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Spectroscopic map** of local structural distortions in ferroelectric PbTiO3/SrTiO3 superlattices at the unit-cell scale
Authors:
Almudena Torres-Pardo,
Alexandre Gloter,
Pavlo Zubko,
Noemie Jecklin,
Celine Lichtensteiger,
Christian Colliex,
Jean-Marc Triscone,
Odile Stephan
Abstract:
The local structural distortions in polydomain ferroelectric PbTiO3/SrTiO3 superlattices are investigated by means of high spatial and energy resolution electron energy loss spectroscopy combined with high angle annular dark field imaging. Local structural variations across the interfaces have been identified with unit cell resolution through the analysis of the energy loss near edge structure of…
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The local structural distortions in polydomain ferroelectric PbTiO3/SrTiO3 superlattices are investigated by means of high spatial and energy resolution electron energy loss spectroscopy combined with high angle annular dark field imaging. Local structural variations across the interfaces have been identified with unit cell resolution through the analysis of the energy loss near edge structure of the Ti-L2,3 and O-K edges. Ab-initio and multiplet calculations of the Ti-L2,3 edges provide unambiguous evidence for an inhomogeneous polarization profile associated with the observed structural distortions across the superlattice.
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Submitted 21 December, 2011;
originally announced December 2011.
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Ultrafast strain engineering in complex oxide heterostructures
Authors:
A. D. Caviglia,
R. Scherwitzl,
P. Popovich,
W. Hu,
H. Bromberger,
R. Singla,
M. Mitrano,
M. C. Hoffmann,
S. Kaiser,
P. Zubko,
S. Gariglio,
J. -M. Triscone,
M. Först,
A. Cavalleri
Abstract:
We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interfa…
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We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.
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Submitted 14 November, 2011;
originally announced November 2011.
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Metal-insulator transition in ultrathin LaNiO3 films
Authors:
R. Scherwitzl,
S. Gariglio,
M. Gabay,
P. Zubko,
M. Gibert,
J. -M. Triscone
Abstract:
Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Rem…
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Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.
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Submitted 9 June, 2011; v1 submitted 26 January, 2011;
originally announced January 2011.
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Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces
Authors:
R. Jany,
M. Breitschaft,
G. Hammerl,
A. Horsche,
C. Richter,
S. Paetel,
J. Mannhart,
N. Stucki,
N. Reyren,
S. Gariglio,
P. Zubko,
A. D. Caviglia,
J. -M. Triscone
Abstract:
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
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Submitted 6 May, 2010;
originally announced May 2010.
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Strain gradient induced polarization in SrTiO3 single crystals
Authors:
P. Zubko,
G. Catalan,
A. Buckley,
P. R. L. Welche,
J. F. Scott
Abstract:
Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, affects the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in sing…
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Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, affects the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO$_3$ as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO$_3$ may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO$_3$ may be polar.
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Submitted 22 October, 2007; v1 submitted 29 May, 2007;
originally announced May 2007.
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Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
Authors:
P. Zubko,
D. J. Jung,
J. F. Scott
Abstract:
We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited…
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We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.
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Submitted 23 July, 2006;
originally announced July 2006.
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Space Charge Effects in Ferroelectric Thin Films
Authors:
P. Zubko,
D. J. Jung,
J. F. Scott
Abstract:
The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squar…
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The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squarer loops were observed in the partially depleted cases and a method was proposed to identify fully depleted samples experimentally from dielectric and polarization measurements alone. Unusual field distributions found for higher dopant concentrations have some interesting implications for leakage mechanisms and limit the range of validity of usual semiconductor equations for carrier transport.
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Submitted 22 July, 2006;
originally announced July 2006.
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High-Field Conduction in Barium Titanate
Authors:
J. F. Scott,
F. D. Morrison,
P. Zubko,
D. J. Jung,
P. Baxter,
M. M. Saad,
J. M. Gregg,
R. M. Bowman
Abstract:
We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in…
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We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in field compared with the early studies of BaTiO3 conduction [A. Branwood et al., Proc. Phys. Soc. London 79, 1161 (1962)]. Comparison is also given with ceramic multilayer barium titanate capacitors, which show similar SCLC behaviour. The data are shown to be completely incompatible with variable range hop** [B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1973)], despite the recent report of such mechanism in SrTiO3 films [D. Fuchs, M. Adam, and R. Schneider, J. Phys. IV France 11, 71 (2001)].
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Submitted 22 September, 2004;
originally announced September 2004.
