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Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN
Authors:
Pietro Pampili,
Vitaly Z. Zubialevich,
Peter J. Parbrook
Abstract:
In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4° vicinal sapphire substrates by metal organic vapour phase epitaxy, with an initial high-temperature sapphire nitridation to control polarity. The material is then converted into a regular array of hexagonal…
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In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4° vicinal sapphire substrates by metal organic vapour phase epitaxy, with an initial high-temperature sapphire nitridation to control polarity. The material is then converted into a regular array of hexagonal pyramids by wet-etch in a KOH solution, and subsequently regrown to coalesce the pyramids back into a smooth layer of improved crystal quality. The key points that enable this technique are the control of the array geometry, obtained by exploiting the anisotropic behaviour of the wet-etch step, and the use of regrowth conditions that preserve the orientation of the pyramids' sidewalls. In contrast, growth conditions that cause an excessive expansion of the residual (000-1) facets on the pyramids' tops cause the onset of a very rough surface morphology upon full coalescence. An X-ray diffraction study confirms the reduction of the threading dislocation density as the regrowth step develops. The analysis of the relative position of the 000-2 GaN peak with respect to the 0006 sapphire peak reveals a macroscopic tilt of the pyramids, probably induced by the large off-axis substrate orientation. This tilt correlates very well with an anomalous broadening of the 000-2 diffraction peaks at the beginning of the regrowth step.
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Submitted 14 February, 2024;
originally announced February 2024.
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Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
Authors:
Jakub Kierdaszuk,
Paweł Dąbrowski,
Maciej Rogala,
Paweł Krukowski,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Marta Sobanska,
Zbigniew R. Zytkiewicz,
Vitaly Z. Zubialevich,
Paweł J. Kowalczyk,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribut…
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Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.
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Submitted 31 July, 2021;
originally announced August 2021.
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Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well
Authors:
Graham P. Murphy,
John J. Gough,
Luke J. Higgins,
Vasilios D. Karanikolas,
Keith M. Wilson,
Jorge A. Garcia Coindreau,
Vitaly Z. Zubialevich,
Peter J. Parbrook,
A. Louise Bradley
Abstract:
Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated non-radiative energy transfer from quantum dots to quantum wells with varying top barrier thicknesses. Plasmon-mediated energy transfer efficiencies of up to ~25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated energy transfer is found to follow the same d^{-4} de…
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Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated non-radiative energy transfer from quantum dots to quantum wells with varying top barrier thicknesses. Plasmon-mediated energy transfer efficiencies of up to ~25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated energy transfer is found to follow the same d^{-4} dependence as the direct quantum dot to quantum well energy transfer. There is also evidence for an increase in the characteristic distance of the interaction, thus indicating that it follows a Förster-like model with the Ag nanoparticle-quantum dot acting as an enhanced donor dipole. Ordered Ag nanoparticle arrays display plasmon-mediated energy transfer efficiencies up to ~21%. To explore the tunability of the array system, two arrays with different geometries are presented. It is demonstrated that changing the geometry of the array allows a transition from overall quenching of the acceptor quantum well emission to enhancement, as well as control of the competition between the quantum dot donor quenching and energy transfer rates.
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Submitted 12 September, 2016;
originally announced September 2016.
