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In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering
Authors:
J. W. Lee,
K. Eom,
T. R. Paudel,
B. Wang,
H. Lu,
H. Huyan,
S. Lindemann,
S. Ryu,
H. Lee,
T. H. Kim,
Y. Yuan,
J. A. Zorn,
S. Lei,
W. Gao,
T. Tybell,
V. Gopalan,
X. Pan,
A. Gruverman,
L. Q. Chen,
E. Y. Tsymbal,
C. B. Eom
Abstract:
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry…
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The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
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Submitted 16 September, 2021;
originally announced September 2021.
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Atomic Imaging of Mechanically Induced Topological Transition of Ferroelectric Vortices
Authors:
Pan Chen,
Xiangli Zhong,
Jacob A. Zorn,
Mingqiang Li,
Yuanwei Sun,
Adeel Y. Abid,
Chuanlai Ren,
Yuehui Li,
Xiaomei Li,
Xiumei Ma,
**bin Wang,
Kaihui Liu,
Zhi Xu,
Congbing Tan,
Longqing Chen,
Peng Gao,
Xuedong Bai
Abstract:
Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning…
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Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress. We reveal the detailed transition process at the atomic scale and reproduce this numerically using phase-field simulations. These findings provide new pathways to control the exotic topological ferroelectric structures for future nanoelectronics and also valuable insights into understanding of lattice-charge interactions at nanoscale.
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Submitted 30 September, 2019;
originally announced October 2019.
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Periodicity doubling cascades: direct observation in ferroelastic materials
Authors:
Arnoud S. Everhardt,
Silvia Damerio,
Jacob A. Zorn,
Silang Zhou,
Neus Domingo,
Gustau Catalan,
Ekhard K. H. Salje,
Long-Qing Chen,
Beatriz Noheda
Abstract:
Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multip…
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Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multiple times. The process is reversible, displaying periodicity doubling as temperature is increased. This observation is backed theoretically and can explain the fingerprints of domain period multiplicity observed in other systems, strongly suggesting this as a general model for pattern formation during phase transitions in ferroelastic materials.
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Submitted 25 January, 2019;
originally announced January 2019.
