Showing 1–43 of 43 results for author: Zolyomi, V

Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature

Authors: B. G. Márkus, M. Gmitra, B. Dóra, G. Csősz, T. Fehér, P. Szirmai, B. Náfrádi, V. Zólyomi, L. Forró, J. Fabian, F. Simon

Abstract: Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including… ▽ More Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that $T_1$ is markedly different from $T_2$. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of $100$ ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of $\sim 70~μ$m, suggesting that thin films of graphite -- or multilayer AB graphene stacks -- can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations. △ Less

Submitted 22 May, 2023; originally announced May 2023.

Journal ref: Nature Communications volume 14, Article number: 2831 (2023)

Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers

Authors: S. J. Magorrian, V. V. Enaldiev, V. Zólyomi, Fábio Ferreira, Vladimir I. Fal'ko, David A. Ruiz-Tijerina

Abstract: Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (… ▽ More Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley. △ Less

Submitted 28 September, 2021; v1 submitted 10 June, 2021; originally announced June 2021.

Comments: 44 pages, 27 figures, 6 appendices. For v2: Modelling and analysis for Q-point bands and minibands added

Journal ref: Phys. Rev. B 104, 125440 (2021)

Tunable spin-orbit coupling in two-dimensional InSe

Authors: A. Ceferino, S. J. Magorrian, V. Zólyomi, D. A. Bandurin, A. K. Geim, A. Patanè, Z. D. Kovalyuk, Z. R. Kudrynskyi, I. V. Grigorieva, V. I. Fal'ko

Abstract: We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding… ▽ More We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment. △ Less

Submitted 8 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 125432 (2021)

Structures of bulk hexagonal post-transition-metal chalcogenides from dispersion-corrected density-functional theory

Authors: S. J. Magorrian, V. Zolyomi, N. D. Drummond

Abstract: We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the… ▽ More We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post-transition-metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has P$6_3$/mmc space group in each case, but that the stacking order differs between GaS, GaSe, GaTe, and InS on the one hand and InSe and InTe on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1-5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multi-GPa pressures reduce the number of competing phases significantly. At higher pressures, an AB$'$-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure; this structure has not been reported in experiments thus far. △ Less

Submitted 18 March, 2021; v1 submitted 27 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 103, 094118 (2021)

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures

Authors: Abigail J. Graham, Johanna Zultak, Matthew J. Hamer, Viktor Zolyomi, Samuel Magorrian, Alexei Barinov, Viktor Kandyba, Alessio Giampietri, Andrea Locatelli, Francesca Genuzio, Natalie C. Teutsch, Temok Salazar, Nicholas D. M. Hine, Vladimir I. Fal'ko, Roman V. Gorbachev, Neil R. Wilson

Abstract: In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic… ▽ More In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering. △ Less

Submitted 8 January, 2021; v1 submitted 27 August, 2020; originally announced August 2020.

Comments: Main paper: 21 pages, 4 figures. Supplementary Material: 12 pages, 7 figures

Journal ref: 2D Materials, 8, 015016. 2021

Diffusion quantum Monte Carlo and GW study of the electronic properties of monolayer and bulk hexagonal boron nitride

Authors: R. J. Hunt, B. Monserrat, V. Zolyomi, N. D. Drummond

Abstract: We report diffusion quantum Monte Carlo (DMC) and many-body $GW$ calculations of the electronic band gaps of monolayer and bulk hexagonal boron nitride (hBN). We find the monolayer band gap to be indirect. $GW$ predicts much smaller quasiparticle gaps at both the single-shot $G_0W_0$ and the partially self-consistent $GW_0$ levels. In contrast, solving the Bethe-Salpeter equation on top of the… ▽ More We report diffusion quantum Monte Carlo (DMC) and many-body $GW$ calculations of the electronic band gaps of monolayer and bulk hexagonal boron nitride (hBN). We find the monolayer band gap to be indirect. $GW$ predicts much smaller quasiparticle gaps at both the single-shot $G_0W_0$ and the partially self-consistent $GW_0$ levels. In contrast, solving the Bethe-Salpeter equation on top of the $GW_0$ calculation yields an exciton binding energy for the direct exciton at the $K$ point in close agreement with the DMC value. Vibrational renormalization of the electronic band gap is found to be significant in both the monolayer and the bulk. Taking vibrational effects into account, DMC overestimates the band gap of bulk hBN, while $GW$ theory underestimates it. △ Less

Submitted 22 April, 2020; v1 submitted 14 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. B 101, 205115 (2020)

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Authors: Maciej R. Molas, Anastasia V. Tyurnina, Viktor Zólyomi, Anna K. Ott, Daniel J. Terry, Matthew J. Hamer, Celal Yelgel, Adam Babiński, Albert G. Nasibulin, Andrea C. Ferrari, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-depe… ▽ More III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: 6 pages, 5 figures

Journal ref: Faraday Discussions 227, 163 (2021)

Crossover from weakly indirect to direct excitons in atomically thin films of InSe

Authors: Adrián Ceferino, Kok Wee Song, Samuel J. Magorrian, Viktor Zólyomi, Vladimir I. Fal'ko

Abstract: We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the influence of the encapsulation environment. For the thinner films, the lowest-energy state of the exciton is weakly indirect in momentum space, with its dispersion… ▽ More We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the influence of the encapsulation environment. For the thinner films, the lowest-energy state of the exciton is weakly indirect in momentum space, with its dispersion showing minima at a layer-number-dependent wave number, due to an inverted edge of a relatively flat topmost valence band branch of the InSe film spectrum and we compute the activation energy from the momentum dark exciton ground state into the bright state. For the films with more than seven In$_2$Se$_2$ layers, the exciton dispersion minimum shifts to $Γ$-point. △ Less

Submitted 22 June, 2020; v1 submitted 14 January, 2020; originally announced January 2020.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 101, 245432 (2020)

Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers

Authors: Jiho Sung, You Zhou, Giovanni Scuri, Viktor Zólyomi, Trond I. Andersen, Hyobin Yoo, Dominik S. Wild, Andrew Y. Joe, Ryan J. Gelly, Hoseok Heo, Damien Bérubé, Andrés M. Mier Valdivia, Takashi Taniguchi, Kenji Watanabe, Mikhail D. Lukin, Philip Kim, Vladimir I. Fal'ko, Hongkun Park

Abstract: Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and supercondu… ▽ More Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering. △ Less

Submitted 4 January, 2020; originally announced January 2020.

Comments: 29 pages, 4 figures in main text, 6 figures in supplementary information

Journal ref: Nature Nanotechnology 2020

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics

Authors: Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak, Daniil Domaretskiy, Viktor Zólyomi, Daniel Terry, James Howarth, Ignacio Gutiérrez-Lezama, Alexander Zhukov, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Takashi Taniguchi, Kenji Watanabe, Roman V. Gorbachev, Vladimir I. Fal'ko, Alberto F. Morpurgo

Abstract: Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an app… ▽ More Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials. △ Less

Submitted 4 February, 2020; v1 submitted 21 December, 2019; originally announced December 2019.

Journal ref: Nature Materials (2020)

Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides

Authors: V. V. Enaldiev, V. Zólyomi, C. Yelgel, S. J. Magorrian, V. I. Fal'ko

Abstract: We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Pa… ▽ More We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\sim 2.5^{\circ}$ and $θ^{\circ}<θ^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers. △ Less

Submitted 5 April, 2020; v1 submitted 28 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Lett. 124, 206101 (2020)

Frequency-dependent ab initio Resonance Raman Spectroscopy

Authors: Gergő Kukucska, Viktor Zólyomi, János Koltai

Abstract: We present a new method to compute resonance Raman spectra based on ab initio level calculations using the frequency-dependent Placzek approximation. We illustrate the efficiency of our hybrid quantum-classical method by calculating the Raman spectra of several materials with different crystal structures. Results obtained from our approach agree very well with experimental data in the literature.… ▽ More We present a new method to compute resonance Raman spectra based on ab initio level calculations using the frequency-dependent Placzek approximation. We illustrate the efficiency of our hybrid quantum-classical method by calculating the Raman spectra of several materials with different crystal structures. Results obtained from our approach agree very well with experimental data in the literature. We argue that our method offers an affordable and far more accurate alternative to the widely used static Placzek approximation. △ Less

Submitted 8 April, 2019; v1 submitted 1 March, 2019; originally announced March 2019.

Comments: 5 pages, 2 figures, comments are welcome

Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES

Authors: Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina, Viktor Zólyomi, Daniel Terry, Alexei Barinov, Alistair Garner, Jack Donoghue, Aidan P. Rooney, Viktor Kandyba, Alessio Giampietri, Abigail J. Graham, Natalie C. Teutsch, Xue Xia, Maciej Koperski, Sarah J. Haigh, Vladimir I. Fal'ko, Roman Gorbachev, Neil R. Wilson

Abstract: Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye… ▽ More Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Journal ref: ACS Nano, 2019, 13, pp 2136-2142

Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures

Authors: Daniel J. Terry, Viktor Zólyomi, Matthew Hamer, Anastasia V. Tyurnina, David G. Hopkinson, Alexander M. Rakowski, Samuel J. Magorrian, Nick Clark, Yuri M. Andreev, Olga Kazakova, Konstantin Novoselov, Sarah J. Haigh, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band… ▽ More Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band gap in 2D crystals of InSe more than doubles in the monolayer compared to thick multilayer crystals, while the high mobility of conduction band electrons is promoted by their light in-plane mass. Here, we use Raman and PL measurements of encapsulated few layer samples, coupled with accurate atomic force and transmission electron microscope structural characterisation to reveal new optical properties of atomically thin GaSe preserved by hBN encapsulation. The band gaps we observe complement the spectral range provided by InSe films, so that optical activity of these two almost lattice-matched PTMC films and their heterostructures densely cover the spectrum of photons from violet to infrared. We demonstrate the realisation of the latter by the first observation of interlayer excitonic photoluminescence in few-layer InSe-GaSe heterostructures. The spatially indirect transition is direct in k-space and therefore is bright, while its energy can be tuned in a broad range by the number of layers. △ Less

Submitted 3 October, 2018; originally announced October 2018.

Comments: 8 pages 4 figures

Journal ref: 2D Mater. 5 041009, 2018

Hybrid k$\cdot$p tight-binding model for subbands and infrared intersubband optics in few-layer films of transition-metal dichalcogenides: MoS$_2$, MoSe$_2$, WS$_2$ and WSe${}_2$

Authors: David A. Ruiz-Tijerina, Mark Danovich, Celal Yelgel, Viktor Zólyomi, Vladimir I. Fal'ko

Abstract: We present a density functional theory parametrized hybrid k$\cdot$p tight binding model for electronic properties of atomically thin films of transition-metal dichalcogenides, 2H-$MX_2$ ($M$=Mo, W; $X$=S, Se). We use this model to analyze intersubband transitions in $p$- and $n$-doped $2{\rm H}-MX_2$ films and predict the line shapes of the intersubband excitations, determined by the subband-depe… ▽ More We present a density functional theory parametrized hybrid k$\cdot$p tight binding model for electronic properties of atomically thin films of transition-metal dichalcogenides, 2H-$MX_2$ ($M$=Mo, W; $X$=S, Se). We use this model to analyze intersubband transitions in $p$- and $n$-doped $2{\rm H}-MX_2$ films and predict the line shapes of the intersubband excitations, determined by the subband-dependent two-dimensional electron and hole masses, as well as excitation lifetimes due to emission and absorption of optical phonons. We find that the intersubband spectra of atomically thin films of the 2H-${MX_2}$ family with thicknesses of $N=2$ to $7$ layers densely cover the infrared spectral range of wavelengths between $2$ and $30\ {\rm μm}$. The detailed analysis presented in this paper shows that for thin $n$-doped films, the electronic dispersion and spin-valley degeneracy of the lowest-energy subbands oscillate between odd and even number of layers, which may also offer interesting opportunities for quantum Hall effect studies in these systems. △ Less

Submitted 4 August, 2018; originally announced August 2018.

Comments: 20 pages, including 17 figures and 5 appendices

Journal ref: Phys. Rev. B. 98, 035411 (2018)

Resonance Raman spectroscopy of silicene and germanene

Authors: Gergő Kukucska, Viktor Zólyomi, János Koltai

Abstract: We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$\,$eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify featu… ▽ More We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$\,$eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify features in the Raman spectra that are unique to the studied materials or the defects therein. We find that in silicene, a new Raman resonance arises from the $2.77\,\rm$eV $π-σ$ plasmon at the M point, measurably higher than the Raman resonance originating from the $2.12\,\rm$eV $π$ plasmon energy. We show that in germanene, the lifetimes of charge carriers, and thereby the linewidths of the Raman peaks, are influenced by spin-orbit splittings within the electronic structure. We use our model to predict scattering cross sections for defect induced Raman scattering involving adatoms, substitutional impurities, Stone-Wales pairs, and vacancies, and argue that the presence of each of these defects in silicene and germanene can be qualitatively matched to specific features in the Raman response. △ Less

Submitted 3 January, 2019; v1 submitted 3 August, 2018; originally announced August 2018.

Comments: 38 pages, 12 figures

Tunable Berry curvature, valley and spin Hall effect in Bilayer MoS$_2$

Authors: Andor Kormányos, Viktor Zólyomi, Vladimir I. Fal'ko, Guido Burkard

Abstract: The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-… ▽ More The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-layer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the inter-layer contribution the Berry curvature becomes highly tunable in double gated devices. We study the dependence of the valley Hall and spin Hall effects on the stacking type and external electric field. Although the valley and spin Hall conductivities are not quantized, in MoS$_2$ 2H bilayers they may change sign as a function of the external electric field which is reminiscent of the behaviour of lattice Chern insulators. △ Less

Submitted 5 July, 2018; v1 submitted 18 April, 2018; originally announced April 2018.

Comments: 19 pages, 6 figures

Journal ref: Phys. Rev. B 98, 035408 (2018)

Hybrid $\mathbf{k\cdot p}$-tight-binding model for intersubband optics in atomically thin InSe films

Authors: Samuel J. Magorrian, Adrian Ceferino, Viktor Zólyomi, Vladimir I. Fal'ko

Abstract: We propose atomic films of n-doped $γ$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from $\sim 0.7$ eV for bilayer to $\sim 0.05$ eV for 15-layer InSe. We use a hybrid $\mathbf{k} \cdot \mathbf{p}$ theory and tight-bind… ▽ More We propose atomic films of n-doped $γ$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from $\sim 0.7$ eV for bilayer to $\sim 0.05$ eV for 15-layer InSe. We use a hybrid $\mathbf{k} \cdot \mathbf{p}$ theory and tight-binding model, fully parametrized using density functional theory, to predict their oscillator strengths and thermal linewidths at room temperature. △ Less

Submitted 12 April, 2018; v1 submitted 22 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. B 97, 165304 (2018)

Spin-orbit coupling, optical transitions, and spin pum** in mono- and few-layer InSe

Authors: S. J. Magorrian, V. Zólyomi, V. I. Fal'ko

Abstract: We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in both In and Se, can be viewed as a transition between two dominantly $s$- and $p_z$-orbital based bands, accompanied by an electron spin-flip. Having par… ▽ More We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in both In and Se, can be viewed as a transition between two dominantly $s$- and $p_z$-orbital based bands, accompanied by an electron spin-flip. Having parametrized $\mathbf{k\cdot p}$ theory using first principles density functional theory we estimate the absorption for $σ^{\pm}$ circularly polarized photons in the monolayer as $\sim 1.5\%$, which saturates to $\sim 0.3\%$ in thicker films ($3-5$ layers). Circularly polarized light can be used to selectively excite electrons into spin-polarized states in the conduction band, which permits optical pum** of the spin polarization of In nuclei through the hyperfine interaction. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Comments: To appear in Phys. Rev. B

Journal ref: Phys. Rev. B 96, 195428 (2017)

Dark trions and biexcitons in WS2 and WSe2 made bright by e-e scattering

Authors: Mark Danovich, Viktor Zólyomi, Vladimir I. Fal'ko

Abstract: The direct band gap character and large spin-orbit splitting of the valence band edges (at the K and K' valleys) in monolayer transition metal dichalcogenides have put these two-dimensional materials under the spot-light of intense experimental and theoretical studies. In particular, for Tungsten dichalcogenides it has been found that the sign of spin splitting of conduction band edges makes groun… ▽ More The direct band gap character and large spin-orbit splitting of the valence band edges (at the K and K' valleys) in monolayer transition metal dichalcogenides have put these two-dimensional materials under the spot-light of intense experimental and theoretical studies. In particular, for Tungsten dichalcogenides it has been found that the sign of spin splitting of conduction band edges makes ground state excitons radiatively inactive (dark) due to spin and momentum mismatch between the constituent electron and hole. One might similarly assume that the ground states of charged excitons and biexcitons in these monolayers are also dark. Here, we show that the intervalley K$\leftrightarrows$K' electron-electron scattering mixes bright and dark states of these complexes, and estimate the radiative lifetimes in the ground states of these "semi-dark" trions and biexcitons to be ~ 10ps, and analyse how these complexes appear in the temperature-dependent photoluminescence spectra of WS2 and WSe2 monolayers. △ Less

Submitted 5 January, 2017; originally announced January 2017.

Comments: 29 pages including supplementary material

Journal ref: Scientific Reports 7, 45998, (2017)

Controlled isotope arrangement in 13C enriched carbon nanotubes

Authors: János Koltai, Gréta Mezei, Viktor Zólyomi, Jenő Kürti, Hans Kuzmany, Thomas Pichler, Ferenc Simon

Abstract: We report the synthesis of a novel isotope engineered $^{13}{\rm C}$--$^{12}{\rm C}$ heteronuclear nanostructure: single-wall carbon nanotubes made of $^{13}{\rm C}$ enriched clusters which are embedded in natural carbon regions. The material is synthesized with a high temperature annealing from $^{13}{\rm C}$ enriched benzene and natural ${\rm C}_{60}$, which are co-encapsulated inside host SWCNT… ▽ More We report the synthesis of a novel isotope engineered $^{13}{\rm C}$--$^{12}{\rm C}$ heteronuclear nanostructure: single-wall carbon nanotubes made of $^{13}{\rm C}$ enriched clusters which are embedded in natural carbon regions. The material is synthesized with a high temperature annealing from $^{13}{\rm C}$ enriched benzene and natural ${\rm C}_{60}$, which are co-encapsulated inside host SWCNTs in an alternating fashion. The Raman 2D line indicates that the $^{13}{\rm C}$ isotopes are not distributed uniformly in the inner tubes. A semi-empirical method based modeling of the Raman modes under $^{13}{\rm C}$ isotope enrichment shows that experimental data is compatible with the presence of $^{13}{\rm C}$ rich clusters which are embedded in a natural carbon containing matrix. This material may find applications in quantum information processing and storage using nuclear spins as qubits. △ Less

Submitted 11 November, 2016; originally announced November 2016.

Comments: 8 pages, 4 figures

Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model

Authors: S. J. Magorrian, V. Zólyomi, V. I. Fal'ko

Abstract: We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and c… ▽ More We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the $Γ$ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, $N$. We find a strong dependence on $N$ of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations \cite{Bandurin2016}. Also, we find that the conduction band electrons are relatively light ($m \propto 0.14-0.18 m_e$), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the $Γ$-point, which is found for up to $N \propto 6$. △ Less

Submitted 2 December, 2016; v1 submitted 1 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 94, 245431 (2016)

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

Authors: D. A. Bandurin, A. V. Tyurnina, G. L. Yu, A. Mishchenko, V. Zolyomi, S. V. Morozov, R. Krishna Kumar, R. V. Gorbachev, Z. R. Kudrynskyi, S. Pezzini, Z. D. Kovalyuk, U. Zeitler, K. S. Novoselov, A. Patane, L. Eaves, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim, Y. Cao

Abstract: A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexag… ▽ More A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 1,000 and 10,000 cm2/Vs at room and liquid-helium temperatures, respectively, allowing the observation of the fully-developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically-thin dichalcogenides and black phosphorus. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Journal ref: Nature Nanotechnology 12, 223-227 (2016)

Doped carbon nanotubes as a model system of biased graphene

Authors: P. Szirmai, B. G. Márkus, B. Dóra, G. Fábián, J. Koltai, V. Zólyomi, J. Kürti, B. Náfrádi, L. Forró, T. Pichler, F. Simon

Abstract: Albeit difficult to access experimentally, the density of states (DOS) is a key parameter in solid state systems which governs several important phenomena including transport, magnetism, thermal, and thermoelectric properties. We study DOS in an ensemble of potassium intercalated single-wall carbon nanotubes (SWCNT) and show using electron spin resonance spectroscopy that a sizeable number of elec… ▽ More Albeit difficult to access experimentally, the density of states (DOS) is a key parameter in solid state systems which governs several important phenomena including transport, magnetism, thermal, and thermoelectric properties. We study DOS in an ensemble of potassium intercalated single-wall carbon nanotubes (SWCNT) and show using electron spin resonance spectroscopy that a sizeable number of electron states are present, which gives rise to a Fermi-liquid behavior in this material. A comparison between theoretical and the experimental DOS indicates that it does not display significant correlation effects, even though the pristine nanotube material shows a Luttinger-liquid behavior. We argue that the carbon nanotube ensemble essentially maps out the whole Brillouin zone of graphene thus it acts as a model system of biased graphene. △ Less

Submitted 17 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 96, 075133 (2017)

Auger recombination of dark excitons in ${\rm WS_2}$ and ${\rm WSe_2}$ monolayers

Authors: Mark Danovich, Viktor Zólyomi, Igor L. Aleiner, Vladimir I. Fal'ko

Abstract: We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs. Using experimental and DFT computed values for the exciton energies, spin-orbit splittings, optical matrix element, and the Auger matrix elements, we find that th… ▽ More We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs. Using experimental and DFT computed values for the exciton energies, spin-orbit splittings, optical matrix element, and the Auger matrix elements, we find that the Auger process begins to dominate at carrier densities as low as $10^{9-10}~{\rm cm^{-2}}$, thus providing a plausible explanation for the low quantum efficiencies reported for these materials. △ Less

Submitted 4 July, 2016; originally announced July 2016.

Comments: 5 pages, 2 figures

Journal ref: 2D Materials, 3, 035011 (2016)

Towards improved exact exchange functionals relying on GW quasiparticle methods for parametrization

Authors: V. Zólyomi, J. Kürti

Abstract: We use fully self-consistent GW calculations on diamond and silicon carbide to reparametrize the Heyd-Scuseria-Ernzerhof exact exchange density functional for use in band structure calculations of semiconductors and insulators. We show that the thus modified functional is able to calculate the band structure of bulk Si, Ge, GaAs, and CdTe with good quantitative accuracy at a significantly reduced… ▽ More We use fully self-consistent GW calculations on diamond and silicon carbide to reparametrize the Heyd-Scuseria-Ernzerhof exact exchange density functional for use in band structure calculations of semiconductors and insulators. We show that the thus modified functional is able to calculate the band structure of bulk Si, Ge, GaAs, and CdTe with good quantitative accuracy at a significantly reduced computational cost as compared to GW methods. We discuss the limitations of this functional in low-dimensions by calculating the band structures of single-layer hexagonal BN and MoS$_{2}$, and by demonstrating that the diameter scaling of curvature induced band gaps in single-walled carbon nanotubes is still physically incorrect using our functional; we consider possible remedies to this problem. △ Less

Submitted 25 February, 2015; originally announced February 2015.

Comments: Submitted to Physical Review B

Journal ref: Phys. Rev. B 92, 035150 (2015)

k.p theory for two-dimensional transition metal dichalcogenide semiconductors

Authors: Andor Kormányos, Guido Burkard, Martin Gmitra, Jaroslav Fabian, Viktor Zólyomi, Neil D. Drummond, Vladimir Fal'ko

Abstract: We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $Γ$, and $M$ points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential… ▽ More We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $Γ$, and $M$ points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential parts of the $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, including the spin-splitting and spin-polarisation of the bands, and we discuss the vibrational properties of these materials. We then use $\mathbf{k}\cdotp\mathbf{p}$ theory to analyse optical transitions in two-dimensional transition metal dichalcogenides over a broad spectral range that covers the Van Hove singularities in the band structure (the $M$ points). We also discuss the visualisation of scanning tunnelling microscopy maps. △ Less

Submitted 6 April, 2015; v1 submitted 24 October, 2014; originally announced October 2014.

Comments: topical review, 52 pages, 16 MB. The arXiv version contains a couple of more relevant experimental references, which have appeared very recently, than the published version

Journal ref: 2D Materials 2, 022001 (2015)

I-band-like non-dispersive inter-shell interaction induced Raman lines in the D band region of double-walled carbon nanotubes

Authors: Bálint Gyimesi, János Koltai, Viktor Zólyomi, Jenő Kürti

Abstract: Non-dispersive, inter-layer interaction induced Raman peaks (I bands) -- in the region of the D band -- have been observed recently for bilayer graphene, when the two layers were rotated with respect to each other. Here, similar observations for double-walled carbon nanotubes (DWCNTs) are theoretically predicted. The prediction is based on double resonance theory, involving non-zone-centered phono… ▽ More Non-dispersive, inter-layer interaction induced Raman peaks (I bands) -- in the region of the D band -- have been observed recently for bilayer graphene, when the two layers were rotated with respect to each other. Here, similar observations for double-walled carbon nanotubes (DWCNTs) are theoretically predicted. The prediction is based on double resonance theory, involving non-zone-centered phonons, and the effect of disorder is replaced by interaction between the two tubes. △ Less

Submitted 18 July, 2014; originally announced July 2014.

Comments: 7 pages, 7 figures

Breaking of valley degeneracy by magnetic field in monolayer MoSe2

Authors: David MacNeill, Colin Heikes, Kin Fai Mak, Zachary Anderson, Andor Kormányos, Viktor Zólyomi, Jiwoong Park, Daniel C. Ralph

Abstract: Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe$_2$ devices. We observe a linear splitting of $-0.22 \frac{\text{meV}}{\text{T}}$ between luminescence peak energies in $σ_{+}$ and $σ_{-}$ emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe$_2$… ▽ More Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe$_2$ devices. We observe a linear splitting of $-0.22 \frac{\text{meV}}{\text{T}}$ between luminescence peak energies in $σ_{+}$ and $σ_{-}$ emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe$_2$ couple photon handedness to the exciton valley degree of freedom, so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with magnetic field, to a degree that depends on the back-gate voltage. An applied magnetic field therefore provides effective strategies for control over the valley degree of freedom. △ Less

Submitted 9 October, 2014; v1 submitted 2 July, 2014; originally announced July 2014.

Comments: expanded discussion section, corrected typo in eq. 1

Journal ref: Phys. Rev. Lett. 114, 037401 (2015)

Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations

Authors: V. Zolyomi, N. D. Drummond, V. I. Fal'ko

Abstract: We use density functional theory to calculate the electronic band structures, cohesive energies, phonon dispersions, and optical absorption spectra of two-dimensional In$_2$X$_2$ crystals, where X is S, Se, or Te. We identify two crystalline phases (alpha and beta) of monolayers of hexagonal In$_2$X$_2$, and show that they are characterized by different sets of Raman-active phonon modes. We find t… ▽ More We use density functional theory to calculate the electronic band structures, cohesive energies, phonon dispersions, and optical absorption spectra of two-dimensional In$_2$X$_2$ crystals, where X is S, Se, or Te. We identify two crystalline phases (alpha and beta) of monolayers of hexagonal In$_2$X$_2$, and show that they are characterized by different sets of Raman-active phonon modes. We find that these materials are indirect-band-gap semiconductors with a sombrero-shaped dispersion of holes near the valence-band edge. The latter feature results in a Lifshitz transition (a change in the Fermi-surface topology of hole-doped In$_2$X$_2$) at hole concentrations $n_{\rm S}=6.86\times 10^{13}$ cm$^{-2}$, $n_{\rm Se}=6.20\times 10^{13}$ cm$^{-2}$, and $n_{\rm Te}=2.86\times 10^{13}$ cm$^{-2}$ for X=S, Se, and Te, respectively, for alpha-In$_2$X$_2$ and $n_{\rm S}=8.32\times 10^{13}$ cm$^{-2}$, $n_{\rm Se}=6.00\times 10^{13}$ cm$^{-2}$, and $n_{\rm Te}=8.14\times 10^{13}$ cm$^{-2}$ for beta-In$_2$X$_2$. △ Less

Submitted 1 May, 2014; v1 submitted 18 March, 2014; originally announced March 2014.

Comments: 9 pages. arXiv admin note: text overlap with arXiv:1302.6067

Journal ref: Phys. Rev. B 89, 205416 (2014)

Electronic properties of linear carbon chains: resolving the controversy

Authors: Amaal Al-Backri, Viktor Zólyomi, Colin J. Lambert

Abstract: Literature values for the energy gap of long one-dimensional carbon chains vary from as little as 0.2 eV to more than 4 eV. To resolve this discrepancy, we use the GW many-body approach to calculate the band gap $E_g$ of an infinite carbon chain. We also compute the energy dependence of the attenuation coefficient $β$ governing the decay with chain length of the electrical conductance of long chai… ▽ More Literature values for the energy gap of long one-dimensional carbon chains vary from as little as 0.2 eV to more than 4 eV. To resolve this discrepancy, we use the GW many-body approach to calculate the band gap $E_g$ of an infinite carbon chain. We also compute the energy dependence of the attenuation coefficient $β$ governing the decay with chain length of the electrical conductance of long chains and compare this with recent experimental measurements of the single-molecule conductance of end-capped carbon chains. For long chains, we find $E_g = 2.16$ eV and an upper bound for $β$ of $0.21$ Å$^{-1}$. △ Less

Submitted 24 February, 2014; originally announced February 2014.

Comments: Accepted for publication in Journal of Chemical Physics

Silicane and germanane: tight-binding and first-principles studies

Authors: V. Zólyomi, J. R. Wallbank, V. I. Fal'ko

Abstract: We present a first-principles and tight-binding model study of silicane and germanane, the hydrogenated derivatives of two-dimensional silicene and germanene. We find that the materials are stable in freestanding form, analyse the orbital composition, and derive a tight-binding model using first-principles calculations to fit the parameters. We present a first-principles and tight-binding model study of silicane and germanane, the hydrogenated derivatives of two-dimensional silicene and germanene. We find that the materials are stable in freestanding form, analyse the orbital composition, and derive a tight-binding model using first-principles calculations to fit the parameters. △ Less

Submitted 15 April, 2014; v1 submitted 10 January, 2014; originally announced January 2014.

Comments: Published in "2D Materials"

Journal ref: 2D Mater. 1, 011005, 2014

Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides

Authors: Andor Kormányos, Viktor Zólyomi, Neil D. Drummond, Guido Burkard

Abstract: We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the intrinsic and the Bychkov-Rashba spin-orbit coupling (SOC) induced by an external electric field. We point out interesting differences in the spin-split conductio… ▽ More We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the intrinsic and the Bychkov-Rashba spin-orbit coupling (SOC) induced by an external electric field. We point out interesting differences in the spin-split conduction band between different TMDC compounds. An important consequence of the strong intrinsic SOC is an effective out-of-plane $g$-factor for the electrons which differs from the free-electron g-factor $g\simeq 2$. We identify a new term in the Hamiltonian of the Bychkov-Rashba SOC which does not exist in III-V semiconductors. Using first-principles calculations, we give estimates of the various parameters appearing in the theory. Finally, we consider quantum dots (QDs) formed in TMDC materials and derive an effective Hamiltonian which allows us to calculate the magnetic field dependence of the bound states in the QDs. We find that all states are both valley and spin split, which suggests that these QDs could be used as valley-spin filters. We explore the possibility of using spin and valley states in TMDCs as quantum bits, and conclude that, due to the relatively strong intrinsic spin-orbit splitting in the conduction band, the most realistic option appears to be a combined spin-valley (Kramers) qubit at low magnetic fields. △ Less

Submitted 4 February, 2014; v1 submitted 29 October, 2013; originally announced October 2013.

Comments: minor corrections made

Journal ref: Phys. Rev. X 4, 011034 (2014)

Monolayer MoS2: trigonal war**, "Γ-valley", and spin-orbit coupling effects

Authors: Andor Kormányos, Viktor Zólyomi, Neil D. Drummond, Péter Rakyta, Guido Burkard, Vladimir I. Fal'ko

Abstract: We use a combined ab-initio calculations and k.p theory based approach to derive a low-energy effective Hamiltonian for monolayer MoS2 at the K point of the Brillouin zone. It captures the features which are present in first-principles calculations but not explained by the theory of ** of the valence and conduction bands, the… ▽ More We use a combined ab-initio calculations and k.p theory based approach to derive a low-energy effective Hamiltonian for monolayer MoS2 at the K point of the Brillouin zone. It captures the features which are present in first-principles calculations but not explained by the theory of ** of the valence and conduction bands, the electron-hole symmetry breaking, and the spin-splitting of the conduction band. We also consider other points in the Brillouin zone which might be important for transport properties. Our findings lead to a more quantitative understanding of the properties of this material in the ballistic limit. △ Less

Submitted 7 June, 2013; v1 submitted 15 April, 2013; originally announced April 2013.

Comments: new references and a new appendix added, presentation improved

Journal ref: Phys Rev B 88, 045416 (2013)

Band Structure and Optical Transitions in Atomic Layers of Hexagonal Gallium Chalcogenides

Authors: V. Zólyomi, N. D. Drummond, V. I. Fal'ko

Abstract: We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga$_2$X$_2$ (X=S, Se, and Te). Our calculations show that all three two-dimensional materials are dynamically stable indirect-band-gap semiconductors with a Mexican-hat dispersion of holes near the top of the valence band. We predict the existence of Lifs… ▽ More We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga$_2$X$_2$ (X=S, Se, and Te). Our calculations show that all three two-dimensional materials are dynamically stable indirect-band-gap semiconductors with a Mexican-hat dispersion of holes near the top of the valence band. We predict the existence of Lifshitz transitions---changes in the Fermi-surface topology of hole-doped Ga$_2$X$_2$---at hole concentrations $n_{S}=7.96\times 10^{13}$ cm$^{-2}$, $n_{Se}=6.13\times 10^{13}$ cm$^{-2}$, and $n_{Te}=3.54\times 10^{13}$ cm$^{-2}$. △ Less

Submitted 16 April, 2013; v1 submitted 25 February, 2013; originally announced February 2013.

Journal ref: Phys. Rev. B 87, 195403 (2013)

Electrically Tunable Band Gap in Silicene

Authors: N. D. Drummond, V. Zolyomi, V. I. Fal'ko

Abstract: We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. We find that the electric field produces a tunable band gap in the Dirac-type electronic spectrum, the gap being suppressed by a factor of about eight by the high polarizability of the system. At… ▽ More We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. We find that the electric field produces a tunable band gap in the Dirac-type electronic spectrum, the gap being suppressed by a factor of about eight by the high polarizability of the system. At low electric fields, the interplay between this tunable band gap, which is specific to electrons on a honeycomb lattice, and the Kane-Mele spin-orbit coupling induces a transition from a topological to a band insulator, whereas at much higher electric fields silicene becomes a semimetal. △ Less

Submitted 22 February, 2012; v1 submitted 20 December, 2011; originally announced December 2011.

Journal ref: Phys. Rev. B 85, 075423 (2012)

Density of states deduced from ESR measurements on low-dimensional nanostructures; benchmarks to identify the ESR signals of graphene and SWCNTs

Authors: Péter Szirmai, Gábor Fábián, Balázs Dóra, János Koltai, Viktor Zólyomi, Jenő Kürti, Norbert M. Nemes, László Forró, Ferenc Simon

Abstract: Electron spin resonance (ESR) spectroscopy is an important tool to characterize the ground state of conduction electrons and to measure their spin-relaxation times. Observing ESR of the itinerant electrons is thus of great importance in graphene and in single-wall carbon nanotubes (SWCNTs). Often, the identification of CESR signal is based on two facts: the apparent asymmetry of the ESR signal (kn… ▽ More Electron spin resonance (ESR) spectroscopy is an important tool to characterize the ground state of conduction electrons and to measure their spin-relaxation times. Observing ESR of the itinerant electrons is thus of great importance in graphene and in single-wall carbon nanotubes (SWCNTs). Often, the identification of CESR signal is based on two facts: the apparent asymmetry of the ESR signal (known as a Dysonian lineshape) and on the temperature independence of the ESR signal intensity. We argue that these are insufficient as benchmarks and instead the ESR signal intensity (when calibrated against an intensity reference) yields an accurate characterization. We detail the method to obtain the density of states from an ESR signal, which can be compared with theoretical estimates. We demonstrate the success of the method for K doped graphite powder. We give a benchmark for the observation of ESR in graphene. △ Less

Submitted 13 September, 2011; v1 submitted 12 September, 2011; originally announced September 2011.

Journal ref: Phys. Status Solidi B, 248: 2688-2691 (2011)

Enhanced NMR relaxation of Tomonaga-Luttinger liquids and the magnitude of the carbon hyperfine coupling in single-wall carbon nanotubes

Authors: A. Kiss, A. Palyi, Y. Ihara, P. Wzietek, H. Alloul, P. Simon, V. Zolyomi, J. Koltai, J. Kurti, B. Dora, F. Simon

Abstract: Recent transport measurements [Churchill \textit{et al.} Nat. Phys. \textbf{5}, 321 (2009)] found a surprisingly large, 2-3 orders of magnitude larger than usual $^{13}$C hyperfine coupling (HFC) in $^{13}$C enriched single-wall carbon nanotubes (SWCNTs). We formulate the theory of the nuclear relaxation time in the framework of the Tomonaga-Luttinger liquid theory to enable the determination of t… ▽ More Recent transport measurements [Churchill \textit{et al.} Nat. Phys. \textbf{5}, 321 (2009)] found a surprisingly large, 2-3 orders of magnitude larger than usual $^{13}$C hyperfine coupling (HFC) in $^{13}$C enriched single-wall carbon nanotubes (SWCNTs). We formulate the theory of the nuclear relaxation time in the framework of the Tomonaga-Luttinger liquid theory to enable the determination of the HFC from recent data by Ihara \textit{et al.} [Ihara \textit{et al.} EPL \textbf{90}, 17004 (2010)]. Though we find that $1/T_1$ is orders of magnitude enhanced with respect to a Fermi-liquid behavior, the HFC has its usual, small value. Then, we reexamine the theoretical description used to extract the HFC from transport experiments and show that similar features could be obtained with HFC-independent system parameters. △ Less

Submitted 8 June, 2011; originally announced June 2011.

Comments: 5 pages plus 2 supplementary materials

Journal ref: Phys. Rev. Lett. 107, 187204 (2011)

Carbon nanotube quantum pumps

Authors: L. Oroszlany, V. Zolyomi, C. J. Lambert

Abstract: Recently nanomechanical devices composed of a long stationary inner carbon nanotube and a shorter, slowly-rotating outer tube have been fabricated. In this Letter, we study the possibility of using such devices as adiabatic quantum pumps. Using the Brouwer formula, we employ a Green's function technique to determine the pumped charge from one end of the inner tube to the other, driven by the rot… ▽ More Recently nanomechanical devices composed of a long stationary inner carbon nanotube and a shorter, slowly-rotating outer tube have been fabricated. In this Letter, we study the possibility of using such devices as adiabatic quantum pumps. Using the Brouwer formula, we employ a Green's function technique to determine the pumped charge from one end of the inner tube to the other, driven by the rotation of a chiral outer nanotube. We show that there is virtually no pum** if the chiral angle of the two nanotubes is the same, but for optimal chiralities the pumped charge can be a significant fraction of a theoretical upper bound. △ Less

Submitted 27 June, 2009; v1 submitted 4 February, 2009; originally announced February 2009.

Comments: 4 pages, 5 figures

Journal ref: ACS Nano 4, 7363-7366 (2010)

Electron spin resonance signal of Luttinger liquids and single-wall carbon nanotubes

Authors: B. Dóra, M. Gulácsi, J. Koltai, V. Zólyomi, J. Kürti, F. Simon

Abstract: A comprehensive theory of electron spin resonance (ESR) for a Luttinger liquid (LL) state of correlated metals is presented. The ESR measurables such as the signal intensity and the line-width are calculated in the framework of Luttinger liquid theory with broken spin rotational symmetry as a function of magnetic field and temperature. We obtain a significant temperature dependent homogeneous li… ▽ More A comprehensive theory of electron spin resonance (ESR) for a Luttinger liquid (LL) state of correlated metals is presented. The ESR measurables such as the signal intensity and the line-width are calculated in the framework of Luttinger liquid theory with broken spin rotational symmetry as a function of magnetic field and temperature. We obtain a significant temperature dependent homogeneous line-broadening which is related to the spin symmetry breaking and the electron-electron interaction. The result crosses over smoothly to the ESR of itinerant electrons in the non-interacting limit. These findings explain the absence of the long-sought ESR signal of itinerant electrons in single-wall carbon nanotubes when considering realistic experimental conditions. △ Less

Submitted 8 May, 2008; originally announced May 2008.

Comments: 5 pages, 1 figure

Journal ref: Phys. Rev. Lett. 101, 106408 (2008)

Fine-tuning the functional properties of carbon nanotubes via the interconversion of encapsulated molecules

Authors: H. Shiozawa, T. Pichler, C. Kramberger, A. Gruneis, M. Knupfer, B. Buchner, V. Zolyomi, J. Koltai, J. Kurti, D. Batchelor, H. Kataura

Abstract: Tweaking the properties of carbon nanotubes is a prerequisite for their practical applications. Here we demonstrate fine-tuning the electronic properties of single-wall carbon nanotubes via filling with ferrocene molecules. The evolution of the bonding and charge transfer within the tube is demonstrated via chemical reaction of the ferrocene filler ending up as secondary inner tube. The charge t… ▽ More Tweaking the properties of carbon nanotubes is a prerequisite for their practical applications. Here we demonstrate fine-tuning the electronic properties of single-wall carbon nanotubes via filling with ferrocene molecules. The evolution of the bonding and charge transfer within the tube is demonstrated via chemical reaction of the ferrocene filler ending up as secondary inner tube. The charge transfer nature is interpreted well within density functional theory. This work gives the first direct observation of a fine-tuned continuous amphoteric do** of single-wall carbon nanotubes. △ Less

Submitted 10 September, 2007; originally announced September 2007.

Inter-shell interaction in double walled carbon nanotubes: charge transfer and orbital mixing

Authors: V. Zólyomi, J. Koltai, Á. Rusznyák, J. Kürti, Á. Gali, F. Simon, H. Kuzmany, Á. Szabados, P. R. Surján

Abstract: Recent nuclear magnetic resonance measurements on isotope engineered double walled carbon nanotubes (DWCNTs) surprisingly suggest a uniformly metallic character of all nanotubes, which can only be explained by the interaction between the layers. Here we study the inter-shell interaction in DWCNTs by density functional theory and inter-molecular Hückel model. We find charge transfer between the l… ▽ More Recent nuclear magnetic resonance measurements on isotope engineered double walled carbon nanotubes (DWCNTs) surprisingly suggest a uniformly metallic character of all nanotubes, which can only be explained by the interaction between the layers. Here we study the inter-shell interaction in DWCNTs by density functional theory and inter-molecular Hückel model. We find charge transfer between the layers using both methods. We show that not only does the charge transfer appear already at the fundamental level of the inter-molecular Hückel model, but also that the spatial distribution of the change in the electron density is well described already at this level of theory. We find that the charge transfer between the walls is on the order of 0.001 e/atom and that the inner tube is always negatively charged. We also observe orbital mixing between the states of the layers. We find that these two effects combined can in some cases lead to a semiconductor--to--metal transition of the double walled tube, but not necessarily in all cases. △ Less

Submitted 12 April, 2007; v1 submitted 15 March, 2006; originally announced March 2006.

Comments: 6 pages, 4 figures, thorough changes (improved LDA CT analysis, added charge redistribution profiles), paper to be submitted to J. Phys. Chem. promptly, submitted version will be uploaded here ASAP

Isotope engineering in carbon nanotube systems

Authors: F. Simon, Ch. Kramberger, R. Pfeiffer, H. Kuzmany, V. Zolyomi, J. Kurti, P. M. Singer, H. Alloul

Abstract: We report on single-wall carbon nanotube (SWCNT) specific $^{13}$C isotope enrichment. The high temperature annealing of isotope enriched fullerenes encapsulated in SWCNTs yields double-wall carbon nanotubes (DWCNTs) with a high isotope enrichment of the inner wall. The vibrational spectra evidences that no carbon exchange occurs between the two walls. The method facilitates the identification o… ▽ More We report on single-wall carbon nanotube (SWCNT) specific $^{13}$C isotope enrichment. The high temperature annealing of isotope enriched fullerenes encapsulated in SWCNTs yields double-wall carbon nanotubes (DWCNTs) with a high isotope enrichment of the inner wall. The vibrational spectra evidences that no carbon exchange occurs between the two walls. The method facilitates the identification of the Raman signal of the outer and inner tubes. Nuclear magnetic resonance proves the significant contrast of the isotope enriched SWCNTs as compared to other carbon phases, and provides information on the electronic properties of the small diameter inner tubes of the DWCNTs. △ Less

Submitted 15 June, 2004; originally announced June 2004.

Comments: 4 pages, 4 figures